• Title/Summary/Keyword: the double ray

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Colon Perforation in Hyperimmunoglobulin E Syndrome - A Case Report - (Hyperimmunoglobulin E 증후군에서의 결장천공 - 증례보고 -)

  • Oh, Jung-Tak;Kim, In-Gyu;Han, Seok-Joo;Kim, Ho-Guen;Hwang, Eui-Ho
    • Advances in pediatric surgery
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    • v.2 no.2
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    • pp.151-155
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    • 1996
  • Hyperimmunoglobulin E syndrome is a relatively rare primary immunodeficiency syndrome characterized by recurrent infection, abscess formation and marked elevation of serum IgE level. The common infectious organism is Staphylococcus aureus and recurrent infection indicates some defects in the immunologic system. Although the infection can affect various organs, gastrointestinal tract involvement is rare and only one case of colon perforation has been previously reproted. Herein we report another one case of colon perforation which ocurred in an 8-year-old girl with hyper immunoglobulin E syndrome. The patient was admitted to the hospital due to an abscess on right neck. The diagnosis of hyper immunoglobulin E syndrome was made because she had eczematoid dermatitis on the face, pneumatocele on left upper lung field and markedly elevated serum IgE level(>15,000 IU/ml) with a past histories of frequent scalp abscesses and otitis media. Abdominal pain developed on the 13th day of admission and abdominal plain X-ray revealed free air. An exploratory laparatomy was performed and two free perforations of the transverse colon were noted. Segmental resection and double barrel colostomy were performed. Colostomy closure was done 4 month later and she had no gastrointestinal problem during a follow up period of 15 months.

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Growth and Characterization of ZnS Thin Films by Hot Wall Method (Hot Wall법에 의한 ZnS 박막의 제작과 특성)

  • Lee, Sang-Tae
    • Journal of Navigation and Port Research
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    • v.26 no.1
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    • pp.120-126
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    • 2002
  • ZnS thin films were prepared on glass substrate at various deposition conditions by a HW apparatus and were systematically investigated the growth characteristics, in terms of deposition edges by a double beam spectro- photometer, and structural analysis by a x-ray diffraction rates were increased with incresing the cell temperature and vapor pressure of sulfur, but were decreased with increasing substrate temperature. The optical characteristics of thin films depends on the deposition rates. The band gap energies of 3.46∼3.52eV measured at room temperature are smaller than the theoretical value of 3.54eV, indicating that impurities exist in the crystal. All ZnS thin films are oriented in the (III) principal direction of a zincblende structure. By introducing the S vapor, optical and crystalline properties have been improved.

Fabrication and Characteristic of C-doped Base AlGaAs/GaAs HBT using Carbontetrachloride $CCI_4$ ($CCI_4$ 를 사용하여 베이스를 탄소도핑한 AlGaAs/GaAs HBT의 제작 및 특성)

  • 손정환;김동욱;홍성철;권영세
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.12
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    • pp.51-59
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    • 1993
  • A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

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Development and testing of multicomponent fuel cladding with enhanced accidental performance

  • Krejci, Jakub;Kabatova, Jitka;Manoch, Frantisek;Koci, Jan;Cvrcek, Ladislav;Malek, Jaroslav;Krum, Stanislav;Sutta, Pavel;Bublikova, Petra;Halodova, Patricie;Namburi, Hygreeva Kiran;Sevecek, Martin
    • Nuclear Engineering and Technology
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    • v.52 no.3
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    • pp.597-609
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    • 2020
  • Accident Tolerant Fuels have been widely studied since the Fukushima-Daiichi accident in 2011 as one of the options on how to further enhance the safety of nuclear power plants. Deposition of protective coatings on nuclear fuel claddings has been considered as a near-term concept that will reduce the high-temperature oxidation rate and enhance accidental tolerance of the cladding while providing additional benefits during normal operation and transients. This study focuses on experimental testing of Zr-based alloys coated with Cr-based coatings using Physical Vapour Deposition. The results of long-term corrosion tests, as well as tests simulating postulated accidents, are presented. Zr-1%Nb alloy used as nuclear fuel cladding serves as a substrate and Cr, CrN, CrxNy layers are deposited by unbalanced magnetron sputtering and reactive magnetron sputtering. The deposition procedures are optimized in order to improve coating properties. Coated as well as reference uncoated samples were experimentally tested. The presented results include standard long-term corrosion tests at 360℃ in WWER water chemistry, burst (creep) tests and mainly single and double-sided high-temperature steam oxidation tests between 1000 and 1400℃ related to postulated Loss-of-coolant accident and Design extension conditions. Coated and reference samples were characterized pre- and post-testing using mechanical testing (microhardness, ring compression test), Thermal Evolved Gas Analysis analysis (hydrogen, oxygen concentration), optical microscopy, scanning electron microscopy (EDS, WDS, EBSD) and X-ray diffraction.

Motukoreaite and Quintinite-3T from Sinyangri Formation, Jeju Island, Korea (제주도 신양리층에서 산출하는 Motukoreaite와 Quintinite)

  • Jeong, Gi-Young
    • Journal of the Mineralogical Society of Korea
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    • v.22 no.4
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    • pp.307-312
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    • 2009
  • Motukoreaite and quintinite-3T, Mg-Al layered double hydroxides, were found in the Sinyangri Formation of Jeju Island. They fill the pores of basaltic volcaniclastic sediments in globular and botryoidal aggregates of fine platy particles. Globular aggregates of quintinite-3T were crusted with the parallel overgrowth of motukoreaite plates. X-ray diffraction data and chemical composition are consistent with those reported in literature, while the Mg/Al ratio of motukoreaite is higher. Structural formula of motukoreaite and quintinite-3T derived from electron microprobe analysis are $Na_{1.6}Ca_{0.1}Mg_{40.7}Al_{20.7}Si_{0.9}(CO_3)_{13.6}(SO_4)_{7.4}(OH)_{108}56H_2O$, and $Mg_{3.7}Al_{1.9}Si_{0.2}(OH)_{12}(CO_3)_{0.8}(SO_4)_{0.2}3H_2O$, respectively. Motukoreaite and quintinite-3T were formed by reaction between seawater and basaltic glass, and contributed to the cementation and lithification of the volcaniclastic sediments.

Characteristic Analysis and Preparation of Multi-layer TiNOx Thin Films for Solar-thermal Absorber (태양열 흡수판용 복층 TiNOx 박막의 제조와 특성 분석)

  • Oh, Dong-Hyun;Han, Sang-Uk;Kim, Hyun-Hoo;Jang, Gun-Eik;Lee, Yong-Jun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.12
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    • pp.820-824
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    • 2014
  • TiNOx multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. 4 multi-layers of $TiO_2$/TiNOx(LMVF)/TiNOx(HMVF)/Ti/substrate have been prepared with ratio of Ar and ($N_2+O_2$) gas mixture. $TiO_2$ of top layer is anti-reflection layer on double TiNOx(LMVF)/TiNOx(HMVF) layers and Ti metal of infrared reflection layer. In this study, the crystallinity and surface properties of TiNOx thin films were estimated by X-ray diffraction(XRD) and field emission scanning electron microscopy(FE-SEM), respectively. The grain size of TiNOx thin films shows to increase with increasing sputtering power. The composition of thin films has been investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200~1,500 nm. The TiNOx multi-layer films show the excellent optical performance beyond 9% of reflectance in those ranges wavelength.

A Retrospective Clinical Study of Isolated Patient Ductus Arteriosus (동맥관 개존증의 임상적 고찰)

  • 김준우
    • Journal of Chest Surgery
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    • v.28 no.2
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    • pp.136-142
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    • 1995
  • A clinical study was performed on 69 cases of isolated PDA surgically treated at the Department of Thoracic and Cardiovascular surgery of Kyung-Hee University Hospital from Mar. 1986 to Feb. 1994. Retrospective clinical analysis of these patients were as follows: 1.23 males and 46 females ranged in age from 16 days to 49 years. [mean 8.69yrs.,sex ratio M:F=1:2 2. Chief complaints were frequent URI in 44%, dyspnea on exertion in 16%,palpitation in 8%, easy fatigability in 6%, and no subjective symptoms in 26%. 3. On auscultation, typical continuous machinery murmur heard in 84%, and systolic murmur in 16% on Lt 2nd or 3rd intercostal space. 4. Simple chest x- ray showed increased pulmonary vascularity in 67%, cardiomegaly in 61%,and within normal limit in 16%. 5. EKG findings were LVH in 42%, biventricular hypertrophy in 17%, RVH in 3%, and within normal limit in 38%. 6. Echocardiogram was performed from all patient, and direct visualization of ductus in 93% 7. Cardiac catheterization was performed in 39 patients. The mean value of the results were;Differance SaO2[MPA-RV =11.03$\pm$ 5.26%,Qp/Qs=2.44$\pm$1.35,systolic pulmonary arterial pressure=40.69 $\pm$ 17.69mmHg. 8. 66 patients were operated through the left posterolateral thoracoctomy ; closure of ductus by double ligation in 43 cases, triple ligation in 23 cases.3 patients were operated by simple closure under cardiopulmonary bypass. 9. There was no death associated with the operation. The operative complications were atelectasis in 8 cases, pneumonia in 4 cases recannalization in 2 cases, and hoarseness in one case. 10. Systemic diastolic pressure was increased 8.12$\pm$ 0.13mmHg, and pulse pressure was decreased about 9.52 $\pm$ 1.87mmHg.

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Video-assisted Diaphragm Plication in Children with Diaphragm Eventration Associated with Congenital Myopathy - Report of 2 Cases - (선천성 근질환을 가진 횡격막 내장탈출 환아에서의 흉강경을 이용한 주름성형술 -2예 보고 -)

  • Lee Jae-Hang;Kim Young-Tae;Kim Joo-Hyun;Kang Chang-Hyun
    • Journal of Chest Surgery
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    • v.39 no.9 s.266
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    • pp.725-728
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    • 2006
  • A six-month old boy and a thirty-month old girl who suffered from dyspnea were admitted to our hospital. Their primary disease was congenital myopathy, and both of them had a history of recurrent pneumonia. Chest X-ray scan showed unilateral diaphragmatic eventration. To minimize the injury of weakened respiratory muscle in children with myopathy, VATS plication was performed under double lung ventilation. Each of the two patients were discharged on the 17th and 24th postoperative day. We report two cases of successful VATS plication in children with diaphragmatic eventration associated with congenital myopathy.

Influence of Cu Doping and Heat Treatments on the Physical Properties of ZnTe Films (Cu 도핑과 열처리가 ZnTe 박막의 물성에 미치는 영향)

  • Choe, Dong-Il;Yun, Se-Wang;Kim, Dong-Hwan
    • Korean Journal of Materials Research
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    • v.9 no.2
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    • pp.173-180
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    • 1999
  • Thermally evaporated ZnTe films were investigated as a back contact material for CdS/CdTe solar cells. Two deposition methods, coevaporation and double-layer methods, were used for Cu doping in ZnTe films. ZnTe layers (0.2$\mu\textrm{m}$ thick) were deposited either on glass or on CdS/CdTe substrates without intentional heating of the substrates. Post-deposition annealing was performed at 200,300 and $400^{\circ}C$ for 3,6 and 9 minutes, respectively. Band gap of 2.2eV was measured for both undoped and doped films and a slight change in the shape of absorption spectra was observed in Cu-doped samples after annealing at $400^{\circ}C$. The resistivity of as-deposited ZnTe decreased from 10\ulcorner~10\ulcornerΩcm down to 10\ulcornerΩcm as Cu concentration increased from 0 to 14 at.%. There was not a noticeable change in less of annealing temperature up to $300^{\circ}C$ whereas films annealed at $400^{\circ}C$ revealed hexagonal (101) orientations as well. Some of Cu-doped ZnTe revealed x-ray diffraction (XRD) peaks related with Cu\ulcornerTe(x=1.75~2). Grain growth was observed from about 20nm in as-deposited films to 50nm after annealing at $400^{\circ}C$ by scanning electron microscopy (SEM). Cu distribution in ZnTe films was not uniform according to Auger electron spectroscopy (AES) measurements.

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Growth and optical conductivity properties for BaIn2S4 single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy(HWE)법에 의한 BaIn2S4 단결정 박막 성장과 광전도 특성)

  • Jeong, Kyunga;Hong, Kwangjoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.25 no.5
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    • pp.173-181
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    • 2015
  • A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.