• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.563-569
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• 1996

Degradation of $Zn_3N_2$ films is studied by using several analytical techniques. Polycrystalline $Zn_3N_2$ films prepared by reactie rf magnetron sputtering are kept in the air. Electrical and optical properties are measured by using van der Pauw technique and double-beam spectrometry. Structure and chemical bonding states are studied by X-ray diffraction(XRD), Fourier transfer infrared ray spectroscopy(FT-IR) and X-ray photoelectron specroscopy (XPS). Significant differences are observed in optical properties between the degraded film and the ZnO film. XRD analysis reveals that the degraded film contains very small ZnO grains because very weak and broad ZnO peaks are observed. XPS and FT-IR measurements reveal the formation of $Zn(OH)_2$ in the degraded film. The existence of N-H bonds in degraded films is exhibited from the N 1s spectra. $Zn_3N_2$ change into the mixture of ZnO, $Zn(OH)_2$ and an ammonium salt.

• Journal of the Korean Graphic Arts Communication Society
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• v.9 no.1
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• pp.1-11
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• 1991

In this reseach, double-layered photoconductor consist of the carrier generation layer(CGL) of $\varepsilon$ type copper phthalocyanine thin film by an aqueous coating method and the carrier transport layer(CGL) of polyvinyl carbazol(PVK) by spin coating. We inverstigated effect of the surfactant solution and cathod electrolysis to the crystal type of $\varepsilon$-CuPc in CGL with TEM, SEM and X- ray diffraction spectroscopy and studied the mechanism of an aqueous coating for the preparation of CGL. The effect of the washing of CGL about the electrophotographic characteristics of the $\varepsilon$-CuPc/PVK doublelayered photoconductors is studied also.

• The Bulletin of The Korean Astronomical Society
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• v.33 no.2
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• pp.36.1-36.1
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• 2008

• Korean Journal of Crystallography
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• v.8 no.1
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• pp.20-25
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• 1997

Two experimental methods have been developed for high resolution measurement of x-ray scattering. The methods used were (1) an x-ray double crystal diffraction (DCD) spectrometer set-up and (2) an x-ray triple crystal diffraction (TCD) spectrometer set-up. With the DCD arrangement of Si(511)-sample(hkl), rocking curves have been plotted for Si (333), Si(004) and GaAs(004). Also, with the TCD arrangement of Si(111)-Si(111)-Si(511)-sample(hkl) including monolithic monocro-collimator and $K_{\alpha1}$ selector, rocking curves have been plotted for Si(333), Si(004) and GaAs(004). The results of FWHM by DCD and TCD set-up have been compared each other and discussed. The reflection topographs (004) and (115) in an $In_{0.037}Ga_{0.0963}As/GaAs$ sample have been obtained by DCD set-up.

• Macromolecular Research
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• v.16 no.7
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• pp.575-585
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• 2008

There are two beamlines (BLs), 4C1 and 4C2, at the Pohang Accelerator Laboratory that are dedicated to small angle X-ray scattering (SAXS). The 4C1 BL was constructed in early 2000 and is open to public users, including both domestic and foreign researchers. In 2003, construction of the second SAXS BL, 4C2, was complete and commissioning and user support were started. The 4C2 BL uses the same bending magnet as its light source as the 4C1 BL. The 4C1 BL uses a synthetic double multilayer monochromator, whereas the 4C2 BL uses a Si(111) double crystal monochromator for both small angle and wide angle X-ray scattering. In the 4C2 BL, the collimating mirror is positioned behind the monochromator in order to enhance the beam flux and energy resolution. A toroidal focusing mirror is positioned in front of the monochromator to increase the beam flux and eliminate higher harmonics. The 4C2 BL also contains a digital cooled charge coupled detector, which has a wide dynamic range and good sensitivity to weak scattering, thereby making it suitable for a range of SAXS and wide angle X-ray scattering experiments. The general performance of the 4C2 BL was initially tested using standard samples and further confirmed by the experience of users during three years of operation. In addition, several grazing incidence X-ray scattering measurements were carried out at the 4C2 BL.

• Journal of the Korean Ceramic Society
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• v.48 no.2
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• pp.183-188
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• 2011

In this article, the effect of the crystal structural environment of $Pr^{3+}$ ions on the photoluminescence (PL) characteristics of double tungstates, such as $A(M_{1-X}Pr_X)W_2O_8$ (A=Li, Cs, M = In, Y, Sc, La; $0.007{\leq}x{\leq}0.1$) and $La_{1.96}Pr_{0.04}W_3O_{12}$ are characterized. By varying the ion radius in A and M sites, the structural environment of $Pr^{3+}$ ions were modified. The structural criteria, that is, the point charge electrostatic potentials V around the $Pr^{3+}$ activator, were calculated using the crystal structural parameters. The point charge potential V can be a valid criterion for $^3P_o$ quenching in various double tungstates. When the calculated V values are large (> 6.0), the luminescence from the $^3P_0$ level becomes dominant. When the calculated V values are about 3.8, the $^1D_2$ line appears weakly but $^3P_0$-level luminescence is absent. When the calculated V values are small (< 2.0), the luminescence from the $^1D_2$ level becomes dominant and $^3P_0$-level luminescence is absent. At 2.0$^3P_o$ quenching to $^1D_2$ level occurs substantially in accordance with the structural criterion of the point charge potential model.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.29 no.1B
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• pp.91-96
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• 2009

Layered double hydroxide is synthesized and used in the arsenate adsorption experiments. The shapes of two materials analyzed by TEM showed that unheated material is amorphous in shape, micro-sized while heat treated material showed more crystallized in shape and nano-sized. X-ray diffraction showed this result more obvious. $N_2$ adsorption-desorption results showed that the materials are mesoporous and the specific surface area of the heated material is more than two times larger than the unheated material. Adsorption of As(V) is expected to be more in the heated material than the unheated material. Kinetic test of arsenate adsorption showed very fast reaction. The reactivity of Fe with As(V) might be the main factor for this result. The reaction kinetic of the heated and the unheated materials were similar and even the adsorption isotherms showed similar results for both materials. Both materials are found to be useful in remediation of soil and groundwater polluted by waste mine tailings consist of high concentration of As(V).

• Korean Journal of Breeding Science
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• v.43 no.6
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• pp.572-575
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• 2011

A new gerbera cultivar 'Whiteny' was released by the National Institute of Horticultural & Herbal Science in 2009. A cross was made between 'Wonder King' with white semi-double and 'Ever Green' with pale greenish white and semi-double in 2007. After evaluation of the characteristics for four years (from 2007 to 2010), it was selected specially for the use of cut flower. The 'Whiteny' cultivar has pure white color (RHS W155D) with black disc center and semi-double flower. The average flower diameter is 11.5 cm, large-sized flower. And inner ray floret and disc diameter are 7.8 cm and 2.2 cm, respectively. It has a long peduncle height, 52.2 cm, and longer vase life, 12.1 days. And it is also adaptable to the local cultural environment of Korea. It is expected that if the 'Whiteny' cultivar is planted, the royalty paid to foreign varieties can be saved. And the local growers will also be benefitted since the cost of cultivars will be lower than the imported ones.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.2
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• pp.61-65
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• 2024

HVPE (Hydride vapor phase epitaxy) is a method of manufacturing thin films or single crystals using gaseous raw materials. This is a method that applies the principles of chemical vapor deposition to grow a single crystal of a material with low meltability or high melting point, and is one of the methods that can obtain a gallium nitride (GaN) single crystal. Recently, much research has been conducted to grow aluminum nitride (AlN) single crystals using this method, but good results have not yet been obtained. In this study, we attempted to grow AlN single crystals using the HVPE method. Nitrogen was used as a carrier gas in the growth process, and the growth results according to changes in the amount of nitrogen (N₂) were examined. Changes in growth crystals as the amount of nitrogen increased were confirmed. The shape of the grown AlN single crystal was observed using an optical microscope, and the rocking curve was measured using double crystal X-ray diffractometry (DCXRD) to confirm the creation of the AlN crystal. The crystallinity of single crystals was also investigated.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.936-944
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• 1995

The effects of Spinodal decomposition induced phase separated microstructure of InGaAsP/InP heterostructure on photoluminescence(PL) intensity and FWHM(full-width at half maximum) were investigated in this study. Lattice mismatches were measured by double crystal x-ray diffractometer, and the microstructures of phase separated InGaAsP were observed by transmission electron microscopy. It was found that the misfit stress calculated from lattice mismatch was related to the periodicity of Spinodal modulation. Strong dependence of PL intensity and FWHM on the modulation periodicity was also found. For systematic understanding of these observations, the interaction elastic strain energy function induced by misfit stress was proposed. The calculation illustrated that the microstructure of the epilayer such as Spinodal decomposition played an important role in determining the optoelectronic properties such as PL intensity and PL FWHM.