• 한국표면공학회지
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• 제32권2호
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• pp.157-164
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• 1999

In this study the effect of nickel addition on the coating weight of mini-mill steels containing silicon has been studied. It is shown that the pure zinc accelerated growth of the alloy layers occurred by a rapid growth of the zeta phase at 0.06%Si. The addition of 0.06%Ni to a pure zinc bath was found to be very effective in reducing the coating weight and promoting preferential development of the delta phase. The coating obtained by immersion in the Zn-Ni bath shows the presence of a nickel-rich region between the zeta phase and the eta phase. It is suggested that nickel prevents the rapid growth of the zeta phase due to the formation of the Zn-Ni-Fe ternary compound, which may act as a barrier to inward diffusion of zinc or iron at the zeta-eta boundary.

• E2M - 전기 전자와 첨단 소재
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• 제10권3호
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• pp.226-232
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• 1997

Ternary semiconductor $Al_{x}$G $a_{1-x}$ Sb crystals which have energy gap of 0.7eV-1.6 eV at room temperature according to the composition ratios were grown by the vertical Bridgman method. The characteristics of the crystals were investigated by XRD, HRTEM and Hall effect. The lattice constants of $Al_{x}$G $a_{1-x}$ Sb crystals were varied from 6.096A over .deg. to 6.135A over .deg. with the composition ratio x. The Hall effect of the $Al_{x}$G $a_{1-x}$ Sb crystals were measured by van der Pauw method with the magnetic field of 3 kilogauss at room temperature. The resistivities of Te-doped $Al_{x}$G $a_{1-x}$ Sb crystals were increased from 0.071 to 5 .OMEGA.-cm at room temperature according to the increment of the composition ratio x. The mobilies of $Al_{x}$G $a_{1-x}$ Sb crystals varied with the composition ratio x resulted in the following three different regions of GaSb-like (0.leq.x.leq.0.3), intermediate (0.3.leq.x.leq.0.4) and AlSb-like (0.4.leq.x.leq.l).q.l).q.l).q.l).

• Transactions on Electrical and Electronic Materials
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• 제18권1호
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• pp.7-12
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• 2017

This work takes place in the context of the development of a transport phenomena simulation based on group III nitrides. Gallium and boron nitrides (GaN and BN) are both materials with interesting physical properties; they have a direct band gap and are relatively large compared to other semiconductors. The main objective of this paper is to study the effect of boron content on the electron transport of the ternary compound $B_xGa_{(1-x)}N$ and the effect of the temperature of this alloy at x=50% boron percentage, specifically the piezoelectric, acoustic, and polar optical scatterings as a function of the energy, and the electron energy and drift velocity versus the applied electric field for different boron compositions ($B_xGa_{(1-x)}N$), at various temperatures for $B_{0.5}Ga_{0.5}N$. Monte carlo simulation, was employed and the three valleys of the conduction band (${\Gamma}$, L, X) were considered to be non-parabolic. We focus on the interactions that do not significantly affect the behavior of the electron. Nevertheless, they are introduced to obtain a quantitative description of the electronic dynamics. We find that the form of the velocity-field characteristic changes substantially when the temperature is increased, and a remarkable effect is observed from the boron content in $B_xGa_{(1-x)}N$ alloy and the applied field on the dynamics of holders within the lattice as a result of interaction mechanisms.

• 한국표면공학회지
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• 제49권1호
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• pp.40-45
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• 2016

Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.

• 한국재료학회지
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• 제10권8호
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• pp.569-574
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• 2000

고온구조용 재료로의 사용이 기대되는 $Al_3Hf$ 및 $Al_3Ta$ 금속간화합물의 연성을 향상시키기 위하여 SPEX mill을 이용한 기계적합금화시 $Ll_2$ 상의 생성거동과 이에 미치는 제 3 원소의 영향을 조사하였다. Al-25%Hf 혼합분말의 경우에는 기계적합금화 6시간부터 $Ll_2$$Al_3Hf$ 금속간화합물의 생성되었으나, Al-25%Ta의 경우에는 30시간까지도 $D0_{22}$ $Al_3Ta$ 금속간화합물만 생성되었고, $Ll_2$상은 생성되지 않았다. Al-12.5%M-25%MTa(M = Cu, Zn, Mn, Fe, Ni) 조성으로 제 3 원소를 첨가하여 20시간 동안 기계적합금화한 결과 Cu과 Zn의 경우에는 $D0_{22}$ 구조 금속간화합물만 생성되었고, Mn, Fe, Ni을 첨가한 경우에는 $600^{\circ}C$에서 등온열처리 후 D0(sub)22상으로 상변태되는 비정질상이 생성된 것으로 보아 이러한 제 3 원소의 첨가는 Cu와 Zn를 첨가한 경우에는 2원계와 마찬가지로 $Ll_2$상과 $D0_{22}$ 상간의 에너지 차이를 극복하기 못한 것으로 생각된다 한편, Al-12.5%M-25%Hf조성으로 Cu과 Zn를 첨가한 경우게는 2원계와 마찬가지로 $Ll_2$구조의 금속간화합물이 생성되었으나, Mn, Fe, Ni을 첨가한 경우에는 Al-12.5%M-25%MTa(M = Cu, Zn, Mn, Fe, Ni) 계와 같이 비정질이 생성된 것으로 보아 Ni, Nn, Fe는 $AL_3X$ 금속간화합물을 비정질화시키는 경향이 강한 것으로 생각된다.로 생각된다.

• 한국초전도ㆍ저온공학회논문지
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• 제17권4호
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• pp.30-33
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• 2015

We report the synthesis of Ni-doped $BaFe_2Se_3$ single crystals by using a flux method. X-ray diffraction (XRD) of $Ba(Fe_{1-x}Ni_x)_2Se_3$ shows a gradual peak shift with an increase in the nominal Ni-doping rate, x = 0, 0.05, and 0.10, due to a decrease in unit-cell volume. All samples show a spin glass transition, and temperature dependence of magnetic susceptibility shows a negligible change in the spin-glass transition temperature ($T_g$) with Ni concentration x. The temperature dependence of electrical resistivity for $BaFe_2Se_3$ shows an insulating behavior, and the resistivity value at 295 K and the activation energy ($E_a$) obtained from the Arrhenius plot decrease with increasing x. These results suggest that the Ni doping can be effectively worked as a dopant for electron charge carriers, but is less efficient in controlling the magnetic property, such as spin glass transition, in the $BaFe_2Se_3$ compound.

• 한국분말재료학회지
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• 제22권6호
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• pp.426-431
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• 2015

Microstructural examination of the Nb-Si-B alloys at Nb-rich compositions is performed. The Nb-rich corner of the Nb-Si-B system is favorable in that the constituent phases are Nb (ductile and tough phase with high melting temperature) and $T_2$ phase (very hard intermetallic compound with favorable oxidation resistance) which are good combination for high temperature structural materials. The samples containing compositions near Nb-rich corner of the Nb-Si-B ternary system are prepared by spark plasma sintering (SPS) process using $T_2$ and Nb powders. $T_2$ bulk phase is made in arc furnace by melting the Nb slug and the Si-B powder compact. The $T_2$ bulk phase was subsequently ball-milled to powders. SPS is performed at $1300^{\circ}C$ and $1400^{\circ}C$, depending on the composition, under 30 MPa for 600s, to produce disc-shaped specimen with 15 mm in diameter and 3 mm high. Hardness tests (Rockwell A-scale and micro Vickers) are carried out to estimate the mechanical property.

• 센서학회지
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• 제7권3호
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• pp.218-224
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• 1998

ZnO 분말과 $Al_{2}O_{3}$ 분말을 1 : 1의 mole 비로 ball milling 시킨 후, 압착하여 펠렛을 제작하였다. 소성시 분위기를 진공으로 유지하기 위하여 각각 $3{\times}10^{-5}$ Torr의 진공도로 석영관에 봉입한 다음 $900^{\circ}C{\sim}1200^{\circ}C$로 소성하였다. 실험결과, $900^{\circ}C{\sim}1100^{\circ}C$까지는 ZnO, $Al_{2}O_{3}$ 및 $ZnAl_{2}O_{4}$의 혼합구조를 보이다가 $1200^{\circ}C$에서 (311), (220)면등의 주된 피크를 갖는 다결정으로 성장하여 $ZnAl_{2}O_{4}$ 삼원화합물의 구조가 확인되었고, 전자현미경촬영에 의해 화합물의 결정화된 입자들이 관찰되었다. 광흡수측정에 의해 에너지 밴드갭은 약 4.53 eV로 계산되었으며, PL 스펙트럼은 소결온도의 상승에 따라 단파장영역으로 이동하여, $1200^{\circ}C$에서 430nm부근에서 발광피크를 보였다.

• 한국재료학회지
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• 제11권9호
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• pp.733-739
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• 2001

In Al-25Nb binary system, it was observed only formation of $D0_{22}$ $Al_3Nb$ intermetallic compound after 5hr milling but it was not observed formation of meta stable phase like L1$_2$ phase. In this state, $D0_{22}$ $Al_3Nb$ fabricated had nano sized grain of approximately 20nm. Ternary systems, transition metals such as Cr, Cu, Fe, Mn were added 6~12at.% as substitution of Al, showed formation of $D0_{22}$ $Al_3Nb$ like Al-25Nb binary system. In Al- l2Cu-25Nb system, it was observed that broad XRD pattern like amorphization of Al and not observed formation of $D0_{22}$ $Al_3Nb$ after 5hr milling. But there was mixed phase of a lot of amorphous Al and little $D0_{22}$ $Al_3Nb$ through TEM. In the states of unalloyed, 5~7hr milling time, those showed exothermic reaction at 35$0^{\circ}C$, which was formation of $D0_{22}$ $Al_3Nb$ like Al-25Nb binary system. With increasing milling time to 10hr, $D0_{22}$ $Al_3Nb$ was transformed to mixed phase of amorphous and nanocryatlline, having approximately 10nm grain but the meta stable $Al_3Nb$ was not fabricated by adding transition metals.

• 한국재료학회지
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• 제11권5호
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• pp.393-397
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• 2001

고온구조용 재료로의 사용이 기대되는 $Al_3$Ti금속간 화합물의 연성 향상을 위한 목적으로 기계적 합금화를 통한 cubic Ll$_2$구조의 생성거동과 Mn의 첨가 영향을 조사하였다. Al-8Mn-25Ti조성에서 20시간의 기계적 합금화를 통해 약 1.0nm 사이즈의 grain을 갖는 nanocrystalline cubic Ll$_2$Al$_3$Ti 금속간 화합물이 제조되었다. Mn이 첨가된 3원계 cubic Ll$_2$Al$_3$Ti 금속간 화합물은 2원계 cubic Ll$_2$Al$_3$Ti 금속간 화합물에서 보이는 Ll$_2$구조에서 D0$_{23}$구조나 D0$_{22}$구조로의 상변태가 발생하지 않았으며 Mn의 첨가로 인해 Ll$_2$구조는 120$0^{\circ}C$가지 안정함을 보였다.