• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.674-677
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• 2011

The dependency of sputtering power on the electrical performances in amorphous HIZO-TFT (hafnium-indium-zinc-oxide thin film transistors) has been investigated. The HIZO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different sputtering power at room temperature. TOF-SIMS (time of flight secondary ion mass spectrometry) was performed to confirm doping of hafnium atom in IZO film. The field effect mobility (${\mu}FE$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing sputtering power. This result can be attributed to the high energy particles knocking-out oxygen atoms. As a result, oxygen vacancies generated in HIZO channel layer with increasing sputtering power resulted in negative shift in Vth and increase in on-current.

• Journal of Biosystems Engineering
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• v.32 no.4
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• pp.237-246
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• 2007

In this study, the microwave free-space transmission technique was used to measure the dielectric property of powdered food at microwave frequencies. The sample holder was designed and fabricated to transmit the microwave signals ranging from 1 to 15GHz. From the microwave propagation theory the equation expressing the dielectric property of powdered food was derived and validated by standard dielectrics. The dielectric property of powdered food such as wheat flour, coffee powder and milk powder was measured and analyzed. In the uniform range of bulk density of material, the real parts of permittivity of the food samples increased with the increase of moisture content, bulk density and temperature of the samples. The propagation properties such as attenuation and phase shift increased linearly as the moisture density of the food samples increased. As a measuring frequency of the moisture content, the X-band was recommended.

• Proceedings of the KOSOMBE Conference
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• v.1996 no.05
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• pp.52-55
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• 1996

The spectra of whole blood EDTA samples from two people were generated using a CARY 5E (UV-VIS-NIR) spectrophotometer from 400 to 1000nm which contain visible and NIR region. Only the data between 400 and 800nm were used to analyze the components of blood. Using the same spectrophotometer, the spectra of Water, normal saline, plasma were generated These spectra were subtracted from each blood sample, and then the first derivative of each of the subtracted data was taken to minimize baseline variations and indicated the wavelength-shift of peak and valley. Normalization and division between two blood samples were used to correlate the quantity ratio of specific components with feature of spectra. Samples were controlled at $30^{\circ}C,\;37^{\circ}C$, ambient temperature.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.05a
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• pp.336-339
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• 2009

In this paper, such as battery power or solar energy and fuel cells generated from Renewable energy sources, high voltage to low voltage DC-DC Converter for converting the design of the study. System consists of low voltage ($24{\sim}28$ [VDC]) and Boosts the voltage (270 [VDC]) for a 3 [kW] DC-DC converter and control circuit is configured as, Power switch the ST Tomson's Automotive low voltage high current MOSFET switches STE250NS10S (temperature 250A) was applied to the two parallel. Also, Controller's processor used ATMEGA128, and Gate Drive applies and composed Photo Coupler TLP250. development. Input voltage (24V) and output voltage (270V) for Conversion in the H-bridge converter topology of the circuit output side power and voltage to control the implementation of the Phase shift angle control applied. And, 3kW of power to pass appropriate specification of the secondary side as interpreted by the high frequency transformer, and the experimental production and analysis of the experiment

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.173-176
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• 2011

The characteristic changes in ZnO thin film according to H- and O- plasma treatments have been studied by Photoluminescence (PL) spectroscopy at room temperature. The red shift of UV peak by 20-30 meV in PL spectra after plasma treatments is identified, which indicates that there are changes in the binding energy of bound exciton and/or the movement of energy levels of lattice defects and impurities. The width of UV peak is decreased after plasma treatments, which is believed to be closely related to the crystal quality of ZnO film. The increase of UV peak intensity after H-plasma treatment is also observed, and this could mean that the radiative recombination is strengthened because the hydrogen atoms in the plasma diffuse into the film where they passivate and neutralize the defects and the impurities.

• Polymer(Korea)
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• v.24 no.3
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• pp.431-436
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• 2000

To improve the thermal and mechanical properties of homo poly(L-lactic acid), DL-mandelic acid, one of the natural $\alpha$-hydroxy acid with aromatic ring as the side-chain residue was used as the comonomer. Copolymers with different contents of mandelic acid were prepared and characterized. The resulting copolymers were mostly amorphous. As the amount of mandelic acid in the monomer feed increased, the molecular weight of the resulting polymers tended to decrease linearly. T$_{g}$ and T$_{d}$ of the copolymer, however, were found to shift toward higher temperature, suggesting the improved thermal stability by increasing content of mandelic acid moiety. Tensile measurements of cast films showed somewhat improved values in the copolymers with mandelic acid content of 5 and 10 wt%.%.%.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.78-84
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• 1998

ZnO:Al films were prepared by an rf magnetron sputtering and targets for the experiments were fabricated by sintering the mixture of ZnO and Al2O3. The most conductive film was obtained from the target with 2.0∼2.2 wt.% of Al2O3. Optical properties studied with spectroscopic ellipsometry showed band gap widening, i.e., the Burstein-Moss shift, with aluminum doping as well as with the elevation of deposition temperature. And it is found that the optical and electrical properties were related to the density of states as well as the variation of donor level. when hydrogen atoms were introduced into the films, the activation energy for the generation of oxygen vacancy was smaller for the films showing higher conductivity. This indicates that the optimum deposition condition for highly conductive ZnO:Al film has strong relation to the optimum doping condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.342-342
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• 2010

We have investigated an Au intercalated monolayer graphene on Ni(111) using angle-resolved photoemission spectroscopy (ARPES), high resolution photoemission spectroscopy (HRPES), and low energy electron diffraction (LEED) at the 3A2 ARUPS beamline in Pohang Accelerator Laboratory. We find the monolayer graphene is well grown on the Ni(111) surface by the adsorption of acetylene. However, the graphene does not show the characteristic $\pi$ band near the Fermi level due to its strong interaction with the underlying substrate. When Au is adsorbed on the surface and then annealed at high temperature, we observe that Au is intercalated underneath the monolayer graphene. The process of the Au intercalation was monitored by HRPES of corresponding Au 4f and C 1s core levels as well as the electronic structure of the $\sigma$, $\pi$ states at $\Gamma$, K points. The $\sigma$, $\pi$ bands of graphene shift towards the Fermi level and the $\pi$ band is clearly observed at K point after the intercalation of full monolayer Au. The full width at half maximum (FWHM) of the C 1s peak narrows to approximately 0.42 eV after intercalation. These results imply that the interaction between the graphene and substrate is considerably weakened after the Au intercalation. We will discuss the graphene is really closer to ideal free standing graphene suggested recently.

• Journal of Power Electronics
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• v.17 no.4
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• pp.905-913
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• 2017

To enhance the zero-voltage switching (ZVS) range and power density of the phase-shift full-bridge (PSFB) ZVS converters used in geophysical exploration, an additional resonant inductor is used as a leakage inductance and a blocking capacitor which is equivalent to interlayer capacitance is integrated into a novel integrated inductor-capacitor-transformer (L-C-T). The leakage inductance and equivalent interlayer capacitance of the novel integrated L-C-T are difficult to determine by conventional methods. To address this issue, this paper presents accurate and efficient methods to compute the leakage inductance and equivalent interlayer capacitance. Moreover, the accuracy of this methodology, which is based on electromagnetic energy and Lebedev's method, is verified by an experimental analysis and a finite element analysis (FEA). Taking the problems of the novel integrated L-C-T into consideration, the losses of the integrated L-C-T are analyzed and the temperature rise of the integrated L-C-T is determined by FEA. Finally, a PSFB ZVS converter prototype with the novel integrated L-C-T is designed and tested.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.673-676
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• 2003

We have investigated $Al_{x}$ $Ga_{l-x}$ N/GaN epilayers (x = 0.08, 0.15) grown by metal organic vapor phase epitaxy on sapphire with photoluminescence(PL), and persistent photoconductivity(PPC) experiments. An anomalous S-shaped shift behavior of temperature dependencies of PL peak energy is observed for the x = 0.15 sample. In PPC measurement, showed that the dark current recovery time of $Al_{x}$$Ga_{l-x}$ N/GaN epilayers mainly depends on the Al content. These behaviors are usually attributed to the presence of carrier localization states. All these phenomena are explained based on the alloy compositional fluctuations in the $Al_{x}$ /$Ga_{l-x}$ N/ epilayers. The photocurrent quenching observed in PPC measurements for $Al_{x}$ $Ga_{l-x}$ N/ epilayers less than 0.2 $\mu\textrm{m}$ thickness indicates that the presence of metastable state in the bandgap of GaN layer, and that the excess holes in the valence band recombine with free electrons.