• 제목/요약/키워드: temperature-shift

검색결과 929건 처리시간 0.043초

멀티스케일 모델링을 이용한 압력용기강의 조사손상 정량예측 (Quantitative Estimation of Radiation Damage in Reactor Pressure Vessel Steels by Using Multiscale Modeling)

  • 이경근;권준현
    • 한국압력기기공학회 논문집
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    • 제10권1호
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    • pp.113-121
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    • 2014
  • In this work, an integrated model including molecular dynamics and chemical rate theory was implemented to calculate the growth of point defect clusters(PDC) and copper-rich precipitates(CRP) which could change the mechanical properties of reactor pressure vessel(RPV) steels in a nuclear power plant. A number of time-dependent differential equations were established and numerically integrated to estimate the evolution of irradiation defects. The calculation showed that the concentration of the vacancies was higher than that of the self-interstitial atoms. The higher concentration of vacancies induced a formation of the CRPs in the later stage. The size of the CRPs was used to estimate the mechanical property changes in RPV steels, as is the same case with the PDCs. The calculation results were compared with the measured values of yield strength change and Charpy V-notch transition temperature shift, which were obtained from the surveillance test data of Korean light water reactors(LWRs). The estimated values were in fair agreement with the experimental results in spite of the uncertainty of the modeling parameters.

넓은 충전 범위를 갖는 전기 자동차용 급속 충전기의 고효율 운전을 위한 손실 분석 (Power Loss Analysis of EV Fast Charger with Wide Charging Voltage Range for High Efficiency Operation)

  • 김대중;박진혁;이교범
    • 전기학회논문지
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    • 제63권8호
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    • pp.1055-1063
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    • 2014
  • Power losses of a 1-stage DC-DC converter and 2-stage DC-DC converter are compared in this paper. A phase-shift full-bridge DC-DC converter is considered as 1-stage topology. This topology has disadvantages in the stress of rectifier diodes because of the resonance between the leakage inductor of the transformer and the junction capacitor of the rectifier diode. 2-stage topology is composed of an LLC resonant full-bridge DC-DC converter and buck converter. The LLC resonant full-bridge DC-DC converter does not need an RC snubber circuit of the rectifier diode. However, there is the drawback that the switching loss of the buck converter is large due to the hard switching operation. To reduce the switching loss of the buck converter, SiC MOSFET is used. This paper analyzes and compares power losses of two topologies considering temperature condition. The validity of the power loss analysis and calculation is verified by a PSIM simulation model.

스퍼터링에 의한 Low-k 박막의 특성 (CharacteristicProperties of Low-k Thin Film Deposited by Sputtering)

  • 오데레사
    • 한국산학기술학회논문지
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    • 제13권7호
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    • pp.3160-3164
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    • 2012
  • 저온공정을 위해 스퍼터 방법에 의해 SiOC 박막을 증착하였으며, SiOC 박막 위에 투명전극을 제작하기 위해서 AZO박막과 ZnO 박막을 증착하였다. 박막의 광학적 특성은 PL 분석기와 스펙트라포토미터를 이용하였다. SiOC 박막은 n-type Si 위에 증착하였을 때 증착조건에 따라서 방사 효과가 다양하게 나타났으며, 두꺼운 박막에서 blue shit 현상이 나타났다. SiOC/Si 박막 위에 AZO 박막을 증착할 경우 빛의 흡수영역이 넓어졌다. 이러한 특성은 태양전지의 투명전극을 만들 경우 효율을 높일 수 있게 된다.

Investigation of natural solution effect in electrical conductivity of PANI-CeO2 nanocomposites

  • Shafiee, Mohammad Reza Mohammad;Sattari, Ahmad;Kargar, Mahboubeh;Ghashang, Majid
    • Steel and Composite Structures
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    • 제24권1호
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    • pp.15-22
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    • 2017
  • A green biosynthesis method is described for the preparation of Polyaniline (PANI)-cerium dioxide ($CeO_2$) nanocomposites in different media via in-situ oxidative polymerization procedure. The effect of various media including use of HCl, Lemon Juice, Beverage, White Vinegar, Verjuice and Apple vinegar extracts on the particles size, morphology as well as the conductivity of $PANI-CeO_2$ nanocomposites was investigated. The electron-withdrawing feature of $CeO_2$ increases doping level of PANI and enhances electron delocalization. These cause a significantly blue shift of C = C stretching band of quinoid from $1570cm^{-1}$ to $1585cm^{-1}$. The optical properties of the pure material and polymeric nanocomposites as well as their interfacial interaction in nanocomposite structures analyzed by UV-visible spectroscopy. The DC electrical conductivity (${\sigma}$) of as-prepared HCl doped PANI and a $PANI-CeO_2$ nanocomposite measured by a four-probe method at room temperature was studied.

NOAA/AVHRR NDVI를 이용한 북한지역 봄 가뭄 분석 (Analysis of Spring Drought Using NOAA/AVHRR NDVI for North Korea)

  • 장민원;유승환;최진용
    • 한국농공학회논문집
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    • 제49권6호
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    • pp.21-33
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    • 2007
  • Different vegetation indices from satellite images have been used for monitoring drought damages, and this study aimed to develop a drought index using NOAA/AVHRR NDVI(Normalized Difference Vegetation Index) and to analyze the temporal and spatial distribution of spring drought severity in North Korea from 1998 to 2001. A new drought index, DevNDVI(Deviation of NDVI), was defined as the difference between a monthly NDVI and average monthly NDVI at the same cover area, and the DevNDVI images at all years except for 2001 demonstrated the drought-damaged areas referred from various domestic and foreign publications. The vegetation of 2001 showed high vitality despite the least amount of rainfall among the target years, and the reason was investigated that higher temperature above normal average would shift the growing stages of plants ahead. Therefore, complementary methods like plant growth models or ground survey data should be adopted in order to evaluate drought-induced plant stress using satellite-based NDVI and to make up far the distortion induced by other environments than lack of precipitation.

풍건 목편을 이용한 합성가스 생산에 대한 실험적 고찰 (Experimental Evaluation of Synthesis Gas Production from Air Dried Woodchip)

  • 홍성구;왕용
    • 한국농공학회논문집
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    • 제53권6호
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    • pp.17-22
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    • 2011
  • Biomass gasification provides synthesis gas or syngas that can be used for internal combustion engines as fuel or chemical synthesis as feedstock. Among different types of gasifiers, downdraft gasifier can produce relatively clean syngas with lower tar contents. In this study, a downdraft gasifier was fabricated with 150 mm of hearth diameter to gasify woodchip that is commercially available in this country. After drying woodchip to about 20 %, gasification experiments were conducted measuring temperature, pressure, air and gas flow rates. The volumetric concentrations of CO, $H_2$, $CO_2$, $CH_4$ were 10.7~14.5, 16.5~21.4, 12.5~16.6, and 2.3~2.9, respectively. They were overall within the ranges of the results that the previous studies showed. However, CO concentration was relatively lower and H2 was slightly higher than those from other studies. It seemed that water gas shift reaction was occurred due to the moisture in the fuel woodchip. Additional drying process coupled with syngas cooling would be required to improve the overall efficiency and syngas quality.

Application of CRAMPS for a Phase Transition in H+-ion irradiated TlH2PO4

  • Kim, Se-Hun;Han, J.H.;Lee, Cheol-Eui;Lee, Kwang-Sei;Kim, Chang-Sam;Dalal, N.S.;Han, Doug-Young
    • 한국자기공명학회논문지
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    • 제14권2호
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    • pp.134-143
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    • 2010
  • We studied the hydrogen-bonded $TlH_2PO_4$ (TDP) ferroelectrics treated with the proton-beam bombardment. The TDP material was irradiated with 1-MeV proton beam at a dose of $10^{15}/cm^2$. In order to analyze the hydrogen environment in TDP, we carried out the $^1H$ high resolution nuclear magnetic resonance (NMR) - i.e., Combined Rotation And Multiple Pulse Spectroscopy (CRAMPS) measurement. The isotropic chemical shift of hydrogen indicates its displacive property is related to the $PO_4$ lattice deformation which occurs throughout the antiferroelectric-, the ferroelastic- and the paraelastic-phase transitions. The temperature dependence of $\sigma_{iso}$ reveals the electronic charge redistribution is induced by the proton-beam irradiation and the elastic property.

Gate 구동 회로를 집적한 TFT-LCD에서 a-Si:H TFT의 온도에 따른 Instability 영향 (a-Si:H in TFT-LCD that integrated Gate driver circuit : Instability effect by temperature)

  • 이범석;이준신
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 D
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    • pp.2061-2062
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    • 2006
  • a-Si(amorphous silicon) TFT(thin film transistor)는 TFT-LCD(liquid crystal display)의 화소 스위칭(switching) 소자로 폭넓게 이용되고 있다. 현재는 a-Si을 이용하여 gate drive IC를 기판에 집적하는 ASG(amorphous silicon gate) 기술이 연구, 적용되고 있는데 이때 가장 큰 제약은 문턱 전압(Vth)의 이동이다. 특히 고온에서는 문턱 전압의(Vth) 이동이 가속화 되고, Ioff current가 증가 하게 되고, 저온($0^{\circ}C$)에서는 전류 구동능력이 상온($25^{\circ}C$) 상태에서 같은 게이트 전압(Vg)에 대해서 50% 수준으로 감소하게 된다. 특히 ASG 회로는 여러 개의 TFT로 구성되는데, 각각의 TFT가 고온에서 Vth shift 값이 다르게 되어 설계시 예상하지 못 한 고온에서의 화면 무너짐 현상 즉 고온 노이즈 불량이 발생 할 수 있다. 고온 노이즈 불량은 고온에서의 각 TFT의 문턱전압 및 $I_D-V_G$ 특성을 측정한 결과 고온 노이즈 불량에 영향을 주는 인자가 TFT의 width와 기생 capacitor비 hold TFT width가 영향을 주는 것으로 실험 및 시뮬레이션 결과 확인이 되었다. 발생 mechanism은 ASG 회로는 AC 구동을 하기 때문에 Voff 전위에 ripple이 발생 되는데 특히 고온에서 ripple이 크게 증가 하여 출력 signal에 영향을 주어 불량이 발생하는 것을 규명하였다.

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Bosonic Insulator Phase beyond the Superconductor-Insulator Transition in Granular In/InO$_x$ Thin Films

  • Kim, Ki-Joon;Lee, Hu-Jong
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.222-222
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    • 1999
  • From extensive measurements of the resistance and the dynamic resistance as functions of magnetic field and temperature, we find that the transport in the insulating state beyond the superconductor-insulator (S-I) transition is dominated by bosons(Cooper pairs and/or vortices) and cannot be described by the theory of the fermionic insulating phase. The maximum of the magnetoresistance at B = B$_m$ and the following negative slope in R(B) with increasing field can be explained by the crossover from the "Bose-glass" to the "Fermi-glass" phase as suggested by Paalanen, Hebard, and Ruel. The zero bias peak in dv/dl for biases below the characteristic voltage V$_c$ (or current $I_c$), gives a clue for the assumption of the "dirty boson" model which states that the insulating state above the critical magnetic field is the phase where Cooper pairs are localized due to the Coulomb blockade with a nonvanishing order parameter. The shift to a lower value of the critical magnetic field by overlaying thin Au layer, which is known as a strong spin-orbit scatterer, also supports the bosonic nature of the S-I transition.

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Properties of Aluminum Doped Zinc Oxide Thin Film Prepared by Sol-gel Process

  • Yi, Sung-Hak;Kim, Jin-Yeol;Jung, Woo-Gwang
    • 한국재료학회지
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    • 제20권7호
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    • pp.351-355
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    • 2010
  • Transparent conducting aluminum-doped ZnO thin films were deposited using a sol-gel process. In this study, the important deposition parameters were investigated thoroughly to determine the appropriate procedures to grow large area thin films with low resistivity and high transparency at low cost for device applications. The doping concentration of aluminum was adjusted in a range from 1 to 4 mol% by controlling the precursor concentration. The annealing temperatures for the pre-heat treatment and post-heat treatment was $250^{\circ}C$ and 400-$600^{\circ}C$, respectively. The SEM images show that Al doped and undoped ZnO films were quite uniform and compact. The XRD pattern shows that the Al doped ZnO film has poorer crystallinity than the undoped films. The crystal quality of Al doped ZnO films was improved with an increase of the annealing temperature to $600^{\circ}C$. Although the structure of the aluminum doped ZnO films did not have a preferred orientation along the (002) plane, these films had high transmittance (> 87%) in the visible region. The absorption edge was observed at approximately 370 nm, and the absorption wavelength showed a blue-shift with increasing doping concentration. The ZnO films annealed at $500^{\circ}C$ showed the lowest resistivity at 1 mol% Al doping.