• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.758-760
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. So we need the effect of the substituent group attached to the phthalocyanine on the surface potential was investigated by Kelvin probe method with varying temperature of the substrate. We were obtained the positive shift of the surface potential for CuPc thin film. We observed the electron displacement at the interface between Au electrode and CuPc layer and we were confirmed by the surface potential measurement.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.1
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• pp.12-17
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• 1999

$MgIn_2Se_4 and MgIn_2Se_4 : Ni^{2+}$ single crystals were grown in the rhombohedral structure by the chemical transport reaction (C.T.R.) method using iodine as a transport agent. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had a direct band gap. The fundamental absorption band edge of these single crystals shift to a shorter wavelength region by decreasing temperature and the temperature dependence of the optical energy gaps in these compounds satisfy Varshni equation. The impurity optical absorption peaks due to nickel are observed in $MgIn_2Se_4 and MgIn_2Se_4 : Ni^{2+}$ single crystal. These impurity optical absorption peaks can be attributed to the electronic transitions between the split energy levels of $Ni_{2+}$ ions located at $T_d$ symmetry site of $MgIn_2Se_4$ host lattice. In the hotoluminescence spectrum of the single crystal at 10 K, a blue emission with a peak at 687nm and a green emission with a peak at 815nm for the $MgIn_2Se_4$ single crystal were observed.

• Ocean and Polar Research
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• v.40 no.3
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• pp.127-143
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• 2018

This study analyzed the influence of climate change on the spawning ground area of the common squid, Todarodes pacificus. To estimate long term changes in the area of the spawning ground of the common squid, water temperature at 50 m deep that can be inferred from sea surface temperature (SST) based on both NOAA/AVHRR (1981.07-2002.12) and MODIS/AQUA (2003.01-2009.12) ocean color data was analyzed. In addition, five climate indices, Arctic Oscillation Index (AO), Siberian High Index (SH), Aleutian Low Pressure Index (ALP), East Asia Winter Monsoon Index (EAWM) and Pacific Decadal Oscillation (PDO) which are the main indicators of climate changes in the northwestern Pacific were used to study the relationship between the magnitude of the estimated spawning ground and climate indices. The area of the estimated spawning ground was highly correlated with the total catch of common squid throughout four decades. The area of the estimated spawning ground was negatively correlated with SH and EAWM. Especially, PDO was negatively correlated with the area of the spawning ground in the northwestern Pacific (r = -0.39) and in the southern part of the East Sea (r = -0.38). There was a positive relationship between the AO and the area of the spawning ground in the northwestern Pacific (r = 0.46) as well as in the southern part of the East Sea (r = 0.32). Temporally, the area of the winter spawning ground in the southern part of the East Sea in the 1980s was smaller than those areas in the 1990s and 2000s, because the area was disconnected with the western coastal spawning ground of Japan in the 1980s, while the area had been made wider and more continuous from the Korea strait to the western coastal water of Honshu in the 1990s and 2000s.

• Korean Journal of Materials Research
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• v.27 no.9
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• pp.489-494
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• 2017

ZnS powder was synthesized using a relatively facile and convenient glycothermal method at various reaction temperatures. ZnS was successfully synthesized at temperatures as low as $125^{\circ}C$ using zinc acetate and thiourea as raw materials, and diethylene glycol as the solvent. No mineralizers or precipitation processes were used in the fabrication, which suggests that the spherical ZnS powders were directly prepared in the glycothermal method. The phase composition, morphology, and optical properties of the prepared ZnS powders were characterized using XRD, FE-SEM, and UV-vis measurements. The prepared ZnS powders had a zinc blende structure and showed average primary particles with diameters of approximately 20~30 nm, calculated from the XRD peak width. All of the powders consisted of aggregated secondary powders with spherical morphology and a size of approximately $0.1{\sim}0.5{\mu}m$; these powders contained many small primary nanopowders. The as-prepared ZnS exhibited strong photo absorption in the UV region, and a red-shift in the optical absorption spectra due to the improvement in powder size and crystallinity with increasing reaction temperature. The effects of the reaction temperature on the photocatalytic properties of the ZnS powders were investigated. The photocatalytic properties of the as-synthesized ZnS powders were evaluated according to the removal degree of methyl orange (MO) under UV irradiation (${\lambda}=365nm$). It was found that the ZnS powder prepared at above $175^{\circ}C$ exhibited the highest photocatalytic degradation, with nearly 95 % of MO decomposed through the mediation of photo-generated hydroxyl radicals after irradiation for 60 min. These results suggest that the ZnS powders could potentially be applicable as photocatalysts for the efficient degradation of organic pollutants.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.450-450
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• 2012

In recent days, advances in ZnO-based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). In particular, the development of high-mobility ZnO-based channel materials has been proven invaluable; thus, there have been many reports of high-performance TFTs with oxide semiconductor channels such as ZnO, InZnO (IZO), ZnSnO (ZTO), and InGaZnO (IGZO). The reliability of oxide TFTs can be improved by examining more stable oxide channel materials. In the present study, we investigated the effects of an ALD-deposited water vapor permeation barrier on the stability of ZnO and HfZnO (HZO) thin film transistors. The device without the water vapor barrier films showed a large turn-on voltage shift under negative bias temperature stress. On the other hand, the suitably protected device with the lowest water vapor transmission rate showed a dramatically improved device performance. As the value of the water vapor transmission rate of the barrier films was decreased, the turn-on voltage instability reduced. The results suggest that water vapor related traps are strongly related to the instability of ZnO and HfZnO TFTs and that a proper combination of water vapor permeation barriers plays an important role in suppressing the device instability.

• Applied Chemistry for Engineering
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• v.23 no.3
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• pp.284-288
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• 2012

This work deals with the chemical characterization of glycine aqueous solution in $CO_2$ absorption. Three alkali elements were impregnated into the glycine in order to facilitate the formation of amino functionalities. The analysis by IR revealed the transformation of ammonium ions to the amino group. In addition, the NMR analysis showed that the substitution of metal cations to the chemical shift of hydrogen and carbon atoms in glycine; in order of lithium glycinate, sodium glycinate and potassium glycinate depending on the electro negativity. Meanwhile, the $CO_2$ absorption at room temperature was the highest in primary amine solution, but at the increasing temperature sodium glycinate could capture more $CO_2$ than that of the pure amine solution.

• Journal of the Korean Magnetics Society
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• v.23 no.2
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• pp.43-48
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• 2013

The Jahn-Teller distortion of chalcogenide $Fe_{0.9}M_{0.1}Cr_2S_4$ (M=Co, Ni, Zn) have been investigated by M$\ddot{o}$ssbauer spectroscopy. The crystal structures of $Fe_{0.9}M_{0.1}Cr_2S_4$ (M=Co, Ni, Zn) are cubic spinel at room temperature. Magnetoresistance measurements indicate these system is conducting-semiconducting transistion around $T_C$. Below $T_C$, the asymmetric line broadening is observed and considered to be dynamic Jahn-Teller distortion. Isomer shift value of the samples at room temperature was about 0.5 mm/s, which means that charge state of Fe ions is ferrous in character. The Ni substitutions for Fe occur to increase the Jahn-Teller relaxation. CMR properties could be explained with magnetic polaron due to Jahn-Teller effect, which is different from both the double exchange interactions of manganite system and the triple exchange interactions of chalcogenide $Cu_xFe_{1-x}Cr_2S_4$.

• Korean Journal of Materials Research
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• v.20 no.10
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• pp.508-512
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• 2010

The optimum route to fabricate nano-sized Fe-50 wt% Co and hydrogen-reduction behavior of calcined Fe-/Conitrate was investigated. The powder mixture of metal oxides was prepared by solution mixing and calcination of Fe-/Co-nitrate. A DTA-TG and microstructural analysis revealed that the nitrates mixture by the calcination at $300^{\circ}C$ for 2 h was changed to Fe-oxide/$Co_3O_4$ composite powders with an average particle size of 100 nm. The reduction behavior of the calcined powders was analyzed by DTA-TG in a hydrogen atmosphere. The composite powders of Fe-oxide and Co3O4 changed to a Fe-Co phase with an average particle size of 40 nm in the temperature range of $260-420^{\circ}C$. In the TG analysis, a two-step reduction process relating to the presence of Fe3O4 and a CoO phase as the intermediate phase was observed. The hydrogen-reduction kinetics of the Fe-oxide/Co3O4 composite powders was evaluated by the amount of peak shift with heating rates in TG. The activation energies for the reduction, estimated by the slope of the Kissinger plot, were 96 kJ/mol in the peak temperature range of $231-297^{\circ}C$ and 83 kJ/mol of $290-390^{\circ}C$, respectively. The reported activation energy of 70.4-94.4 kJ/mol for the reduction of Fe- and Co-oxides is in reasonable agreement with the measured value in this study.

• Elastomers and Composites
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• v.48 no.2
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• pp.156-160
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• 2013

A study on compressive creep behavior of ACM rubber for automotive engine gasket was performed using TMA thermal analysis. From the results of isothermal measurements with constant load of 1 N at several different temperatures of 160, 180, 200, and $220^{\circ}C$, compressive creep data at the given temperatures were obtained, and therefrom, shift factor ($a_T$) and master curve at reference temperature of $160^{\circ}C$ were obtained using time-temperature superposition principle (TTSP). $C_1$ and $C_2$ of WLF (Williams-Landel-Ferry) equation were calculated through the WLF plot as -1.107 and 11.571, respectively. From this, life time of ACM rubber at $120^{\circ}C$ was predicted as about 24,000 hrs.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.15-19
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• 1998

Structural and optical properties of $In_xGa_{1-X}N$ as well as $In_{0.1}Ga_{0.9}N$/GaN single quantum we11 (SQW) grown on sapphire (0001) substrate with an based GaN using rf-plasma assisted MBE have been investigated. The quality of the InXGal.,N fdm was improved as the growth temperature increased. In PL measurements at low temperatures, the band edge emission peaks of $In_xGa_{1-X}N$ was shifted to red region as an indium cell and substrate temperature increased. For $In_{0.1}Ga_{0.9}N$/GaN SQW, the optical emission energy has blue shift about 15meV in PL peak, due to the confined energy level in the well region. And, the FWHM of the $In_{0.1}Ga_{0.9}N$/GaN SQW was larger than that of the bulk Ino,la.9N films. The broadening of FWHM can be explained either as non-uniformity of Indium composition or the potential fluctuation in the well region. Photoconductivity (PC) decay measurement reveals that the optical transition lifetimes of the SQW measured gradually increased with temperatures.