• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 추계학술대회 발표 논문집
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• pp.31-34
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• 2003

We developed a new systematic calibration procedure which was applied to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity has been studied using 4 different groups of experimental conditions. Although the indium is susceptible to the TED, the RTA is effective to suppress the TED effect and maintain a steep retrograde profile. Like the boron, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients at the $Si/SiO_2$ interface much less than 1. In contrast, however, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed technique is validated by SIMS data with errors less than 5% between simulation and experiment.

• Journal of Magnetics
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• 제4권1호
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• pp.5-9
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• 1999

Effect of sulfur segregation on tertiary recrystallization and magnetic induction during final annealing was investigated in a 3% Si-Fe electrical strip containing 6 ppm(LS) and 15 ppm(HS) sulfur. During final annealing, Auger peak height of segregated sulfur on the surface of the strips reached a maximum, and then decreased to low level with increasing annealing time, which is attributed to sulfur segregation and evaporation. The magnetic induction of the thin-gauged 3% Si strip was inversely proportional to the Auger peak height of segregated sulfur on the surface. The overall profile for surface segregation of sulfur and B10 was observed, irrespective of sulfur content in Si-Fe strips, but the peaks of LS strips appeared earlier than those of HS strips. The grain growth rate of the LS strips during final annealing was faster than that of the HS strips, which may be attributed to the pinning effects of segregated sulfur. With increasing final annealing temperature, B10 value increased rapidly and the saturation level in B10 increased.

• 한국지반공학회논문집
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• 제15권6호
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• pp.297-306
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• 1999

본 연구에서는 우란바톨(Ulanbator)에서 북경(Beijing)사이의 지역에서 샘플링한 응회암 풍화토의 동상 특성을 규명하기 위해 상재하중 변화에 따른 동결점 저하를 중심으로 양단면 온도 일정$(상단 5^{\circ}C,\; 하단 5^{\circ}C)$의 동상실험 실시하였다. 본 실험을 통해, 빙편 성장에 따른 체적 팽창과 동결면으로의 수분이동을 확인하였다. 그리고 상재하중과 온도와의 관계식을 제안하였다. 상재하중이 증가함에 따라 동상속도는 비례적으로 감소하였고 빙편발생온도의 절대치는 증가하였다. 또한 동결부분의 함수비가 미동결 부분보다 크게, 특히 동결부분에서도 빙정에 가까울수록 함수비는 증가하였다.

• 한국주조공학회지
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• 제24권6호
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• pp.331-339
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• 2004

Melt-extrusion process, a metallic melt poured and solidified up to semisolid state in the container can be directly extruded through the die exit to form a product of bar shape without other intermediate processes. In this study, the fabrication characteristics of the process were evaluated with various process parameters, such as preheating temperature of extrusion dies, extrusion temperature and extrusion ratio. AI-Cu alloys were successfully extruded after squeezing out of liquid during melt-extrusion with smaller force compared to the solid extrusion. Soundly AI-Cu alloy bar was fabricated at the preheating temperature of $500{\sim}520^{\circ}C$. The range of extrusion temperature for soundly melt-extruded AI-Cu alloy bar was increased with increasing extrusion ratio. Mechanical properties of melt-extruded AI-Cu alloy bars were found change with Cu content of the melt-extruded bars due to the occurrence of segregation. The various extrusion temperature yielded equiaxed structure with a grains size about 200 ${\mu}m$.

• Journal of Korean Vacuum Science & Technology
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• 제3권2호
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• pp.139-144
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• 1999

Hydrogen concentration depth profiles in homoepitaxial Si(001) films grown from hyper-thermal Si beams generated by ultrahigh vacuum (UHV) ion-beam sputtering have been measured by nuclear reaction analyses as a function of film growth temperature and deposition rate. Bulk H concentrations CH in the crystalline Si layers were found tio be below detection limits, 1${\times}$1019cm-3, with no indication of significant H surface segregation at the crystalline/amorphous interface region. This is quite different than the case for growth by molecular-beam epitaxy (MBE) where strong surface segregation was observed for similar deposition conditions with average CH values of 1${\times}$1020cm-3 in the amorphous overlayer. The markedly decreased H concentrations in the present experiments are due primarily to hydrogen desorption by incident hyperthermal Si atoms. Reduced H surface coverages during growth combined with collisionally-induced filling of interisland trenches and enhanced interlayer mass transport provide an increase in critical epitaxial thicknesses by up to an order of magnitude over previous MBE results.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2001년도 학술논문발표회
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• pp.28-33
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• 2001

This paper presents the results of mock up test on the manufacturing of high fluidity concrete by applying flowing methods with segregation reducing type superplasticizer(SRS). Three kinds of mock up structure are made such as. conventional concrete(A), high fluidity concrete(B) and high fluidity concrete incorporating 20% of fly ash(C). Physical and mechanical properties, temperature history of structure and nondestructive test are performed. Segregation reducing type superplasticizer is put into base concrete at field, and base concrete is also flowed at field. C mock up structure which requires 0.85% of SRS to flow base concrete shows most desirable performance at fresh state. The highest rising temperature shows the lowest at C structure among the tested structures. Strength variations before and after flowing also show the lowest values at C structures.

• 한국재료학회지
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• 제25권9호
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• pp.497-502
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• 2015

The hardenability of boron steel specimens with different molybdenum and chromium contents was investigated using dilatometry and microstructural observations, and then was quantitatively measured at a critical cooling rate corresponding to 90 % martensite hardness obtained from a hardness distribution plotted as a function of cooling rate. Based on the results, the effect of an austenitizing temperature on the hardenability and tensile properties was discussed in terms of segregation and precipitation behavior of boron atoms at austenite grain boundaries. The molybdenum addition completely suppressed the formation of pro-eutectoid ferrite even at the slowest cooling rate of $0.2^{\circ}C/s$, while the chromium addition did at the cooling rates above $3^{\circ}C/s$. On the other hand, the hardenability of the molybdenum-added boron steel specimens decreased with an increasing austenitizing temperature. This is associated with the preferred precipitation of boron atoms since a considerable number of boron atoms could be concentrated along austenite grain boundaries by a non-equilibrium segregation mechanism. The secondary ion mass spectroscopy results showed that boron atoms were mostly segregated at austenite grain boundaries without noticeable precipitation at higher austenitization temperatures, while they formed as precipitates at lower austenitization temperatures, particularly in the molybdenum-added boron steel specimens.

• 소성∙가공
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• 제8권3호
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• pp.247-247
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• 1999

The segregation (distribution) of nickel and the composition of its constituents influence the low thermal expansion characteristics (Invar effect) in Fe-30 wt.% Ni-12.5 wt.% Co-xC Invar alloy. The change of coefficient of the thermal expansion and magnetic properties were studied as an aspect of carbon addition causing the segregation of Ni in primary austenite of as-cast Fe-30 wt.% Ni-12.5 wt.% Co Invar alloy. The coefficient of thermal expansion of Fe-30 wt.% Ni-12.5 wt.% Co-xC Invar alloy showed its lowest value at 0.08 wt.% carbon, increased with increasing carbon content in the range of 0.08-1.0 wt.%C, kept constant at 1.0-2.0 wt.%C and decreased at carbon higher than 2.0 wt.%. The effective distribution of the coefficient of nickel in as-cast Fe-30 wt.% Ni-12.5 wt.% Co-xC Invar alloy increased with increasing carbon content. The volume fraction of they phase of Fe-30 wt.% Ni-12.5 wt.% Co-xC alloy increased with increasing carbon content. The microstructure of Fe-30 wt.% Ni-12.5 wt.% Co-xC alloy changed with the carbon content was independent of the coefficient of thermal expansion. The Curie temperature changed linearly with the carbon content and was similar to the change of the coefficient of thermal expansion. Moreover, the coefficient of thermal expansion decreased when the ratio of saturation magnetization to Curie temperature ($\sigma_s/T_c$) increased, decreasing the Curie temperature and showed a specific relationship with the magnetic properties of the Fe-30 wt.% Ni-12.5 wt.% Co-xCInvar alloy.

• Journal of Welding and Joining
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• 제35권1호
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• pp.79-88
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• 2017

The effect of residual metallic sodium on the solidification cracking susceptibility of type 316FR stainless steel was investigated via transverse-Varestraint tests. And a solidification brittle temperature range (BTR) of type 316FR stainless steel was 37 K. However, the BTR expanded from 37 to 67 K, as the amount of metallic sodium at the specimen surface increased from 0 to $7.99mg/cm^2$. Microstructural observation of the weld metal suggested that metallic sodium existed in the weld metal, including in the cell boundaries, during welding solidification. Thermodynamic calculations suggested that sodium expanded the temperature range of solidliquid coexistence during welding solidification of the steel weld metal. Therefore, the increased solidification cracking susceptibility (i.e., expansion of the BTR) in the residual sodium environment was attributed to enhanced segregation of sodium during the welding solidification; this segregation, in turn, resulted in an expanded temperature range of solid-liquid coexistence.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권6호
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• pp.854-859
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• 2016

Recently, GeSn is drawing great deal of interests as one of the candidates for group-IV-driven optical interconnect for integration with the Si complementary metal-oxide-semiconductor (CMOS) owing to its pseudo-direct band structure and high electron and hole mobilities. However, the large lattice mismatch between GeSn and Si as well as the Sn segregation have been considered to be issues in preparing GeSn on Si. In this work, we deposit the GeSn films on Si by DC magnetron sputtering at a low temperature of $250^{\circ}C$ and characterize the thin films. To reduce the stresses by GeSn onto Si, Ge buffer deposited under different processing conditions were inserted between Si and GeSn. As the result, polycrystalline GeSn domains with Sn atomic fraction of 6.51% on Si were successfully obtained and it has been demonstrated that the Ge buffer layer deposited at a higher sputtering power can relax the stress induced by the large lattice mismatch between Si substrate and GeSn thin films.