JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지
DOI QR코드

DOI QR Code

Crystallization and Characterization of GeSn Deposited on Si with Ge Buffer Layer by Low-temperature Sputter Epitaxy

  • Lee, Jeongmin (Graduate School of IT Convergence Engineering, Gachon University) ;
  • Cho, Il Hwan (Department of Electronic Engineering, Myongji University) ;
  • Seo, Dongsun (Department of Electronic Engineering, Myongji University) ;
  • Cho, Seongjae (Graduate School of IT Convergence Engineering, Gachon University) ;
  • Park, Byung-Gook (Department of Electrical Engineering and Computer Science, Seoul National University)
  • Received : 2016.06.08
  • Accepted : 2016.08.28
  • Published : 2016.12.30
Download PDF
⟨ Previous Next ⟩

Abstract

Recently, GeSn is drawing great deal of interests as one of the candidates for group-IV-driven optical interconnect for integration with the Si complementary metal-oxide-semiconductor (CMOS) owing to its pseudo-direct band structure and high electron and hole mobilities. However, the large lattice mismatch between GeSn and Si as well as the Sn segregation have been considered to be issues in preparing GeSn on Si. In this work, we deposit the GeSn films on Si by DC magnetron sputtering at a low temperature of $250^{\circ}C$ and characterize the thin films. To reduce the stresses by GeSn onto Si, Ge buffer deposited under different processing conditions were inserted between Si and GeSn. As the result, polycrystalline GeSn domains with Sn atomic fraction of 6.51% on Si were successfully obtained and it has been demonstrated that the Ge buffer layer deposited at a higher sputtering power can relax the stress induced by the large lattice mismatch between Si substrate and GeSn thin films.

Keywords

References

  1. W. V. Heddeghem, S. Lambert, B. Lannoo, D. Colle, M. Pickavet, and P. Demeester, "Trends in worldwide ICT electricity consumption from 2007 to 2012," Comput. Commun., vol. 50, no. 1, pp. 64-76, Sep. 2014. https://doi.org/10.1016/j.comcom.2014.02.008
  2. J. Liu, R. Camacho-Aguilera, J. T. Bessette, X. Sun, X. Wang, Y. Cai, L. C. Kimerling, and J. Michel, "Ge-on-Si optoelectronics", Thin Solid Films, vol. 520, no. 8, pp. 3354-3360, Feb. 2012. https://doi.org/10.1016/j.tsf.2011.10.121
  3. L. C. Kimerling. (2011, Jan. 21), Microphotonics: The Next Platform for the Information Age [online]. Available at http://ilp.mit.edu/media/conferences/2011-japan/Kimerling.pdf.
  4. J. Liu, "Monolithically integrated Ge-on-Si active photonics," Photonics, vol. 1, no. 3, pp. 162-197, May 2014. https://doi.org/10.3390/photonics1030162
  5. X. Wang, H. Li, R. Camacho-Aguilera, Y. Cai, L. C. Kimerling, J. Michel, and J. Liu, "Infrared absorption of n-type tensile-strained Ge-on-Si," Opt. Lett., vol. 38, no. 5, pp. 652-654, Feb. 2013. https://doi.org/10.1364/OL.38.000652
  6. J. Michel, R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, R. Dutt, and L. Kimerling, "An electrically pumped Ge-on-Si laser," National Fiber Optics Engineers Conference 2012, pp. PDP5A.6, Los Angeles, CA, Mar. 2012.
  7. J. S. Harris, R. Chen, H. Lin, Y. Huo, E. Fei, S Paik, S. Cho and T. Kamins, "MBE growth of GeSn and SiGeSn heterojunctions for photonic devices," ECS Trans., vol. 50, no. 9, pp. 601-605, Oct. 2012. https://doi.org/10.1149/05009.0601ecst
  8. R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, and J. S. Harris, "Increased photoluminescence of strain-reduced, high-Sn composition Ge1-xSnx alloys grown by molecular beam epitaxy," Appl. Phys. Lett., vol. 99, no. 18, pp. 181125-1-181125-3, Oct. 2011. https://doi.org/10.1063/1.3658632
  9. Y. Cho, O. Rubel, and S. Cho, "First-principle study of GeSn alloys for electrical and optical characterization," Proc. The 23rd Korean Conference on Semiconductors (KCS), WG1-F-3, Gangwon-do, Korea, Feb. 22-24.
  10. S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grutzmacher, "Lasing in direct-bandgap GeSn alloy grown on Si," Nat. Photonics, vol. 9, no. 2, pp. 88-92, Feb. 2015. https://doi.org/10.1038/nphoton.2014.321
  11. A. Gassenq, F. Gencarelli, J. V. Campenhout, Y. Shimura, R. Loo, G. Narcy, B. Vincent, and G. Roelkens, "GeSn/Ge heterostructure short-wave infrared photodetectors on silicon," Opt. Express, vol. 20, no. 25, pp. 27297-27303, Nov. 2012. https://doi.org/10.1364/OE.20.027297
  12. M. Oehme, M. Schmid, M. Kaschel, M. Gollhofer, D. Widmann, E. Kasper and J. Schulze, "GeSn p-in detectors integrated on Si with up to 4 % Sn," Appl. Phys. Lett., vol. 101, no. 14, pp. 141110-1-141110-4, Oct. 2012. https://doi.org/10.1063/1.4757124
  13. M. Kim, M. Schmid, M. Kaschel, M. Gollhofer, D. Widmann, E. Kasper, and J. Schulze, "Polycrystalline GeSn thin films on Si formed by alloy evaporation," Appl. Phys. Express, vol. 8, no. 6, pp. 061301-1-061304, May 2015. https://doi.org/10.7567/APEX.8.061301
  14. R. W. Olesinski and G. J. Abbaschian, "The Ge-Sn (Germanium-Tin) system," Bulletin of Alloy Phase Diagrams, vol. 5, no. 3, pp. 265-271, Jun. 1984. https://doi.org/10.1007/BF02868550
  15. J. Meija, T. B. Coplen, M. Berglund, W. A. Brand, P. De Bievre, M. Groning, N. E. Holden, J. Irrgeher, R. D. Loss, T. Walczyk, and T. Prohaska, "Atomic weights of the elements 2013 (IUPAC Technical Report)," Pure and Applied Chemistry, vol. 88, no. 1-2, pp. 1-27, Feb. 2016. https://doi.org/10.1515/pac-2015-5009
  16. J.-X. Wang, S. J. Kwon, and E. S. Cho, "Laser ablation of amorphous indium gallium zinc oxide films deposited by different RF power," Microelectronic Engineering, vol. 95, no. 5, pp. 107-111, Jul. 2012. https://doi.org/10.1016/j.mee.2012.02.003
  17. T. Tsukamoto, N. Hirose, A. Kasamatsu, T. Mimura, T. Matsui, and Y. Suda, "Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method," J. Mater. Sci., vol. 50, no. 12, pp. 4366-4370, Jun. 2015. https://doi.org/10.1007/s10853-015-8990-4
  18. R. H. Marchessault and Christen Skaar, "Surface characteristics of wood and cellulose," in Surface and coatings related to paper and wood: A Symposium [held at] College of Forestry at Syracuse University, 1st ed. New York, Syracuse Univ. Press, 1967, Chap. 13, pp. 402.
  19. R. J. Jaccodine, "Surface energy of germanium and silicon," J. Electrochem. Soc., vol. 110, no. 6, pp. 524-527, Jun. 1963. https://doi.org/10.1149/1.2425806
  20. T. Tsukamoto, N. Hirose, A. Kasamatsu, T. Mimura, T. Matsui, Y. Suda, "Control of surface flatness of Ge layers directly grown on Si (001) substrates by DC sputter epitaxy method," Thin Solid Films, vol. 592, no. A, pp. 34-38, Oct. 2015. https://doi.org/10.1016/j.tsf.2015.08.044