• 센서학회지
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• 제16권1호
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• pp.24-32
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• 2007

Conductive rubber material was molded in a belt shape to measure respiration. Its resistivity was approximately $0.03{\;}{\Omega}m$ and the resistance-displacement relationship showed a negative exponent. The temperature coefficient was approximately $0.006{\;}k{\Omega}/^{\circ}C$ negligible when practically applied on the abdomen. The conductive rubber belt was applied on a normal male's abdomen with the dimensional change measured during resting breathing. The abdominal signal was differentiated ($F_{m}$) and compared with the accurate standard air flow rate signal ($F_{s}$) obtained by pneumotachometry. $F_{m}$ and $F_{s}$ differed in waveform, but the start and end timings of each breaths were clearly synchronized, demonstrating that the respiratory frequency could be accurately estimated before further processing of $F_{m}$. $F_{m}-F_{s}$ loop showed a nonlinear hysteresis within each breath period, thus 6 piecewise linear approximation was performed, leading to a mean relative error of 14 %. This error level was relatively large for clinical application, though customized calibration seemed feasible for monitoring general variation of ventilation. The present technique would be of convenient and practical application as a new wearable respiratory transducer.

• 한국항공우주학회지
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• 제35권12호
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• pp.1089-1094
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• 2007

연구에서는 코일 스프링 및 작동유체가 없는 새로운 감쇠기의 개념을 소개한다. 이 감쇠기는 영구자석과 전도체 실린더로 구성된다. 극성이 반대인 자석은 반발력을 발생시키고, 이는 코일 스프링과 같은 역할을 한다. 영구자석과 전도체 실린더 사이의 상대운동은 기전력을 발생시키는 와전류를 생성하고, 이로 인해 감쇠 유체를 대신할 수 있는 감쇠력을 만든다. 이러한 감쇠를 와전류 감쇠기라고 한다. 본 연구에서 제안된 와전류 감쇠기의 중요한 장점은 감쇠 유체 및 어떠한 외부의 전력도 필요로 하지 않고, 비접촉식이며, 온도에도 민감하지 않다. 본 연구에서는 제안된 와전류 감쇠기를 제작하고 실험을 통하여 감쇠기의 동적 특성을 조사하였다. 본 연구의 결과는 제안된 와전류 감쇠기가 우수한 감쇠 성능을 가짐을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.221-221
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• 2013

Striving to replace the well known silicon nanocrystals embedded in oxides with solution-processable charge-trapping materials has been debated because of large scale and cost effective demands. Herein, a silicon quantum dot-polystyrene nanocomposite (SiQD-PS NC) was synthesized by postfunctionalization of hydrogen-terminated silicon quantum dots (H-SiQDs) with styrene using a thermally induced surface-initiated polymerization approach. The NC contains two miscible components: PS and SiQD@PS, which respectively are polystyrene and polystyrene chains-capped SiQDs. Spin-coated films of the nanocomposite on various substrate were thermally annealed at different temperatures and subsequently used to construct metal-insulator-semiconductor (MIS) devices and thin film field effect transistors (TFTs) having a structure p-$S^{++}$/$SiO_2$/NC/pentacene/Au source-drain. C-V curves obtained from the MIS devices exhibit a well-defined counterclockwise hysteresis with negative fat band shifts, which was stable over a wide range of curing temperature ($50{\sim}250^{\circ}C$. The positive charge trapping capability of the NC originates from the spherical potential well structure of the SiQD@PS component while the strong chemical bonding between SiQDs and polystyrene chains accounts for the thermal stability of the charge trapping property. The transfer curve of the transistor was controllably shifted to the negative direction by chaining applied gate voltage. Thereby, this newly synthesized and solution processable SiQD-PS nanocomposite is applicable as charge trapping materials for TFT based memory devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.624-627
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• 2003

The BLT thin-films were one of the promising ferroelectric materials with a good leakage current and degradation behavior on Pt electrode. The BLT target was sintered at $1100^{\circ}C$ for 4 hours at the air ambient. $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin-film deposited on $Pt/Ti/SIO_2/Si$ wafer by rf magnetron sputtering method. At annealed $700^{\circ}C$, (117) and (006) peaks appeared the high intensity. The hysteresis loop of the BLT thin films showed that the remanent polarization ($2Pr=Pr^+-Pr^-$) was $16uC/cm^2$ and leakage current density was $1.8{\times}10^{-9}A/cm^2$ at 50 kV/cm with coersive electric field when BLT thin-films were annealed at $700^{\circ}C$. Also, the thin film showed fatigue property at least up to $10^{10}$ switching bipolar pulse cycles under 7 V. Therefore, we induce access to optimum fabrication condition of memory device application by rf-magnetron sputtering method in this report.

• 한국세라믹학회지
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• 제40권2호
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• pp.109-112
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• 2003

The grain-boundary microcracking materials in the system $Al_2$TiO$_{5}$ -ZrTiO$_4$(ZAT) is influenced by the thermal expansion anisotropy. The range of ZAT compositions investigated had showed very low thermal expansions of 0.3~1.3$\times$10$^{-6}$ K loin compared to 8.29$\times$10$^{6}$ K of pure ZrTiO$_4$and 0.68$\times$10$^{6}$ K of polycrystalline $Al_2$TiO$_{5}$ , respectively, compared with the theoretical thermal expansion coefficient for a single crystal of $Al_2$TiO$_{5}$ , 9.70$\times$10$^{6}$ K. The low thermal expansion and microcraking temperature are apparently due to a combination of thermal contraction and expansion caused by the large thermal expansion anisotropy of the crystal a ies of the $Al_2$TiO$_{5}$ phase.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.388-388
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• 2010

In this study, Ferroelectric vinylidene fluoride-trifluoroethylene (VF2-TrFE) copolymer films were directly deposited on degenerated Si (n+, $0.002\;{\Omega}{\cdot}cm$) using by spin coating method. A 1~5 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene (VF2:TrFE = 70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers at a spin rate of 2000 ~ 4000 rpm for 2 ~ 30 seconds. After annealing in a vacuum ambient at 100 ~ $200^{\circ}C$ for 60 min, upper aluminum electrodes were deposited by vacuum evaporation for electrical measurement. X-ray diffraction results showed that the VF2-TrFE films on Si substrates had $\beta$-phase of copolymer structures. The capacitance on highly doped Si wafer showed hysteresis behavior like a butterfly shape and this result indicates clearly that the copolymer films have ferroelectric properties. The typical measured remnant polarization ($P_r$) and coercive filed ($E_c$) values were about $5.7\;{\mu}C/cm^2$ and 710 kV/em, respectively, in an applied electric field of ${\pm}$ 1.5 MV/em. The gate leakage current densities measured at room temperature was less than $7{\times}10^{-7}\; A/cm^2$ under a field of 1 MV/cm.

• 한국세라믹학회지
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• 제25권3호
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• pp.217-224
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• 1988

Alkoxide 법으로 합성한 알루미나의 동공 구조를 BET 법으로 구한 흡 탈착 등온선의 hysteresis loop와 동공 분포로부터 고찰하였다. 알루미나는 aluminum isopropoxide를 화학량의 물로 가수분해하여 제조하였고, 가수분해 온도는 3$^{\circ}C$와 8$0^{\circ}C$에서 수행하였다. 이어 20$0^{\circ}C$부터 50$0^{\circ}C$까지 단계적으로 승온시키며 일정시간 열처리하였다. 3$^{\circ}C$ 가수분해 시료의 동공부피는 열처리 온도에 비례하여 증가하였으며, 동공크기는 쌍입분포(twin peaked pore size distribution)형으로 나타났다. 그러나 8$0^{\circ}C$ 가수분해 시료는 열처리에 의하여 동공부피가 감소하고, 동공크기는 단입분포(single peaked pore size distribution)로 나타났다. 이러한 관찰 결과로부터 전자의 동공형태는 slit형, 후자는 ink-bottle형을 하고 있는 것으로 추정되었다. 이와 같이 가수분해 온도는 동공 형태를 결정하는 중요한 인자일 뿐만 아니라, 층상 알루미나의 구조수 일탈 거동을 결정하는데 중요하다. 열처리 효과는 단지 최종 제품의 동공 분포를 결정하는데 영향을 주고 있는 것으로 해석되었다.

• KSBB Journal
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• 제29권4호
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• pp.303-306
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• 2014

Antifreeze proteins (AFP) inhibit ice growth to permit the survival of polar organisms in the cold environments. The recombinant AFP from an Antarctic bacterium, Flavobacterium frigoris PS1, FfIBP (Flavobacterium frigoris ice-binding protein), was produced using Pichia pastoris expression system. The optimum fermentation temperature ($30^{\circ}C$) and pH (5) for FfIBP production were determined using a fed-batch culture system. The maximal cell density and purified FfIBP were 112 g/L and 70 mg/L, respectively. The thermal hysteresis (TH) activity (0.85) of FfIBP obtained using a glycerol-methanol fed-batch culture system was 2-fold higher than that of the LeIBP (Leucosporidium ice-binding protein). This work allows for large-scale production of FfIBP, which could be extended to further application studies using recombinant AFPs.

• 한국자기학회지
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• 제26권6호
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• pp.190-195
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• 2016

본 연구에서는 분산제 및 산화제를 전혀 첨가하지 않은 채 고압 균질기를 사용하여 $Fe(OH)_2$ 현탁액으로부터 합성된 마그네타이트 나노입자의 자기 특성에 미치는 공정 압력의 영향을 체계적으로 조사하였다. 관측된 X-선 회절 패턴으로부터 모든 나노입자가 마그네타이트의 역스피넬 구조를 가진다는 것을 알 수 있었다. X-선 회절 및 투과전자현미경 분석 결과로부터 마그네타이트 나노입자의 평균 입자 크기는 고압 균질화 과정의 공정 압력에 의해 조절될 수 있는 것으로 드러났다. 평균 입자 크기는 21에서 26 nm에 이르며, 공정 압력이 증가함에 따라 감소하는 것으로 밝혀졌다. 시료진동형 자화율 측정기를 사용하여 상온에서 측정된 자기 이력 곡선으로부터 1500 bar의 공정 압력 조건에서 합성된 마그네타이트 나노분말이 초상자성 거동을 나타내는 것을확인할 수 있었다.

• 한국자기학회지
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• 제15권2호
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• pp.109-112
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• 2005

Electronic and magnetic properties of $Ti_{1-x}M_xO_{2-\delta}$ (M=Co and Fe) thin films grown by sol-gel method have been investigated. Anatase and rutile $Ti_{1-x}Co_xO_{2-\delta}$ films were successfully grown on $Al_2O_3$ (0001) substrates and exhibited p-type electrical conductivity while the undoped films n-type conductivity. Room temperature vibrating sample magnetometry measurements on the anatase and rutile $Ti_{1-x}Co_xO_{2-\delta}$ films with same x ($=4.8 at.{\%}$) showed quite similar magnetic hysteresis curves with the saturation magnetic moment of $\~4 {\mu}_B$ per Co ion despite their differences in structural and electronic properties. Such giant magnetic moment is attributable to the unquenched orbital moment of the $Co^{2+}$ ions substituting the octahedral $Ti^{4+}$ sites. Similar ferromagnetic behavior was observed for $Ti_{1-x}Fe_xO_{2-\delta}$ films that are highly resistive compared to the Co doped samples. Saturation magnetic moment was found to decrease for higher x, i.e., $\~2$ and $\~1.5 {\mu}_B$ per Fe ion for x=2.4 and 5.8 at. $\%$, respectively. Conversion electron $M\ddot{o}ssbauer$ spectroscopy measurements predicted the coexistence of $Fe^{2+}$ and $Fe^{3+}$ ions at the octahedral sites of $Ti_{1-x}Fe_xO_{2-\delta}$.