• Journal of the Korean Ceramic Society
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• v.24 no.3
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• pp.263-269
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• 1987

It is investigated that the determination of the correlation between the change of microstructure and electrical properties. Yttria is added to the compositiojn of rhombohedral region in Pb(Mg1/3Nb2./3)O3-PbTiO3-PbZrO3 ternary system. Average grian size, lattice parameters and distribution of yttrium are characterized by XRD, SEM and EDS. Electrical properties are determined by measurement of Curie temperature, piezoelectric properties and hysteresis loops. The results are as follows; 1. Both lattice parameters, a and ${\alpha}$, are changed by addition of yttria to the composition of rhomboheadral region in Pb(Mg1/3Nb2./3)O3-PbTiO3-PbZrO3 ternary system and Curie temperature is proportional to the values at (90-${\alpha}$).

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.2
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• pp.43-47
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• 2003

Lead zirconate titanate (PZT) thin films were fabricated by the pulsed laser ablation deposition (PLAD) method onto Pt/Ti/SiO$_2$/Si substrates. Crystalline phases as well as preferred orientations in PZT films were investigated by X-ray diffraction analysis (XRD). The well-crystallized perovskite phase and the (101) preferred orientation were obtained by two-step annealing at the conditions of $650^{\circ}C$, 1 hour. It was found that the temperature for the pulsed laser ablated PZT films annealed via a two-step annealing process can be reduced 20$0^{\circ}C$ compared to that of the conventional three-step annealing temperature profile for enhancing the transformation of the perovskite phase. The remanent polarization and the coercive field of this film were about 20 $\mu$C/$\textrm{cm}^2$ and 46 kV/cm, while the dielectric constant and loss values measured at 1 KHz were approximately 860 and 0.04, respectively. The interesting phenomena of this film, such as vertical shift in hysteresis curve, are also discussed.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.218-221
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• 1999

Magnetization measurements have been carried out on grain aligned Hg-1223 with the applied field parallel to the c-axis. The temperature dependence of the lower critical field H$_{cl}$(T) was determined by considering the effect of the surface barrier on the magnetization. H$_{cl}$(T) have been determined .from magnetic hysteresis loops within the framework of the modified Kim-Anderson critical-state model, where the surface barrier and the lower critical field are explicitly considered. At high temperature, H$_{cl}$(T) is identified as H$_p$(T). This results are agreed with the theory of Bean-Livinston surface barriers.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.17-21
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• 2000

In order to investigate the dependence of a content in lead lanthanum titanate (PLT) films and heat treatment, sol-gel process has been used. Four types of PLT thin films with the chemical formula, Pb$\_$1-x/ La$\_$x/Ti$\_$1-x/4/O$_3$(X=18, 21, 24 and 28 mole %) have been fabricated on Pt/Ti/SiO$_2$/Si multi-layers and ITO/glass substrates, The post-annealing temperature in the range of 400~700 $\^{C}$ is applied for the formation of perovskite structure in PLT films. The structureal, electrical and optical properties of PLT film with the addition of La content are estimated. The films orientation and surface structure of films are studied by XRD (X-ray diffraction) and SEM(scanning electron microscopy). The P-E hysteresis loop become narrower with increasing La content. The average transmittance of the films is about 80%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.677-681
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• 2013

Apart from the deposition of alignment layer, alignment process needs to be involved for alignment of liquid crystal (LC) molecules. To simplify manufacturing process, several method were used such as rubbing, ion-beam irradiation, UV irradiation, and lithography. But, eventually it needs another treatment for LC alignment. Here, we suggested Si induced polyimide (PI) alignment layer at low temperature. Using this method, we are able to eliminate the alignment process and found that the alignment and electro-optic performance are much better than that of the rubbed PI LC cells. Compared to the rubbed PI cells, the response time was decreased by 70% and C-V characteristics have hysteresis-free.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.170-172
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• 2002

The epilayer of vertically stacked, self-assembled InAs Quantum Dots (QDs)was grown by MBE with solid sources in non-cracking K-cells, and the sample was fabricated to a FET structure using a conventional technology. The device characteristic and performance were studied. At 77K and room temperature, the threshold voltage shift values are 0.75V and 0.35 V, which are caused by the trapping and detrapping of electrons in the quantum dots. Discharging and charging curves form the part of a hysteresis loop to exhibit memory function. The electrical injection of confined electrons in QDs products the threshold voltage shift and memory function with the persistent electron trapping, which shows the potential use for a room temperature application.

• Journal of Magnetics
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• v.14 no.4
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• pp.147-149
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• 2009

We report the exchange bias in antiferromagnet/ferrimagnet $Cr_2O_3/Fe_3O_4$ core/shell nanoparticles. The magnetic field hysteresis curve for $Cr_2O_3/Fe_3O_4$ nanoparticles after field-cooling (FC) clearly showed both horizontal ($H_{EB}{\sim}$610 Oe) and vertical (${\Delta}M{\sim}$5.6 emu/g) shifts at 5 K. These shifts disappeared as the temperature increased toward the Neel temperature of $Cr_2O_3\;(T_N{\sim}$307 K). The $H_{EB}\;and\;{\Delta}M$ values were sharply decreased between the $1^{st}\;and\;the\;2^{nd}$ magnetic field cycles, and then slowly decreased with further cycling. These results are discussed in terms of the formation of single domains with pinned, uncompensated, antiferromagnetic spin and their evolution into multi-domains with cycling.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2065-2071
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• 2007

This paper suggests the harmonic effects on HTS(High Temperature Superconducting) power cable. HTS cable is regarded as not only one of the important countermeasure to supply high density power demand area, but also one of countermeasures greenhouse technology. However, with the development of digital society, the distribution line power is much contaminated with harmonics generated by various power electronic equipments. This paper describes how the HTS cable responds to the harmonic and increases AC losses caused by hysteresis phenomenon. EMTDC based harmonic simulation results are compared with AC loss measured values.

• Textile Coloration and Finishing
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• v.16 no.1
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• pp.53-58
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• 2004

The preparation of responsive fibers from acrylic fibers is studied. Various responsive fibers, such as fibers which change their color on exposure to light or with change in temperature, have been developed and are used commercially However, the responsive material in these fibers are not the fiber itself but chemicals in microcapsules attached to the fibers by finishing, and few fibers exhibit responsive properties by itself. The partial hydrolysis of polyacrylonitrile fibers to obtain pH responsive fibers is presented in this paper. Partial hydrolysis was effected by control of the concentration of the sodium hydroxide used in the hydrolysis, hydrolysis temperature and time. The degree of hydrolysis was evaluated by nitrogen content of the hydrolyzed fibers and their response, change in length, to aqueous solutions of varying pH was studied by continually changing the pH. Significant changes in lengths with pH were observed and the gel transition behavior varied with the conditions of hydrolysis. The hysteresis of the length change was also studied to evaluate the possibilities of using hydrolyzed acrylic fibers as pH sensors.

• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.569-576
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• 1997

Electrically-induced strain and polarization studies of the (1-x)Pb(Mg1/3Nb2/3)O3-PbZrO3 crystalline solutions have been done. Dielectric constants with temperature were investigated for 0$\leq$x$\leq$0.95. With increasing PbZrO3 content the transition maxima were found to move to higher temperature region and DPT (Diffused Phase Transition) properties were decreased for x$\leq$0.60. Phase transition between ferroelectric states and antiferroelectric states was confirmed for 0.93$\times$10-3 for 0.4