• Applied Chemistry for Engineering
• /
• v.28 no.5
• /
• pp.571-575
• /
• 2017

In this study, cadmium telluride (CdTe) quantum dots were synthesized by using ultrasonic irradiation method. Optical properties and structural characteristics of the CdTe quantum dots were analyzed by two main variables; the ratio of the precursor and the synthesis time. As the synthesis time increased, the band gap reduction was observed with the growth of CdTe quantum dots. As for the luminescence properties, the red shift appeared at 510~610 nm wavelength range. Also, it was confirmed that the red shift occurs rapidly as the ratio of Te increases. According to PL peak intensity, the highest intensity was shown at 180 to 240 min. Structural characteristics of CdTe quantum dots were investigated through XRD and TEM, and the cubic zinc blend structure was observed. The size of quantum dots was about 2.5 nm and uniformly dispersed when the synthesis time took 210 min. In addition, the apparent crystallinity was discovered in FFT image.

• Journal of the Korean Ceramic Society
• /
• v.41 no.1
• /
• pp.24-29
• /
• 2004

Nanocomposite of Te doped $SiO_2$ films was prepared for the new functional materials like non-linear optic materials, selective absorption and transmission films. The effects of particle size and morphology with different hydrolysis conditions on the properties were examined with TGA/DTA. XRD. UV-spectrometer, SPM, SEM and EDS. It was found that Te/$SiO_2$ films showed high absorption peak at 550nm visible region by plasma resonance of Te fine particles. The Rm surface roughness of the films was about 2.5 nm and the size of Te particles was 5~10nm.

• Korean Journal of Crystallography
• /
• v.1 no.2
• /
• pp.66-75
• /
• 1990

The Pd-Te system has been investigated by differential thermal analysis, X-ray diffration, electron probe microanalysis and reflected light microscopy. New phase relations in 0-50at% Te portion of the binary system are proposed. Eight binary phases exist in the system:Pd17Te4, Pd20Te7.PdsTe3, P477e3, P497e4, P637e2, PeTe and PaTe2. Of these, P677e3 is a newly reported phase. P4177e4 is cubic, space group Fd3c, with a=12.678(5)A. The X-ray powder data of PdsTe3, indexed on an orthorhombic cell, give a= 12.843(3), b=15.126(3), c: 11.304(2)A and those of PdTTe.1, indexed on a monoclinic cell, give a=7.444(1), b= 13.918(2) , c=8.873(2)A. p =92.46(2). Some physical and optical properties of synthetic phases in the system are also reported.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.8 no.2
• /
• pp.440-448
• /
• 2004

In this paper, to make a solar cell of II-Ⅵ ZnTe compound semiconductor, we studied for the property of the transparent electrode(AZO) and Buffer layer(ZnO), and for reducing the energyband gap of optical absorber layer which are most effective on its efficiency. The ZnTe thin film was used the optical absorber layer of solar cell. Zn and Te were deposited using the co-sputtering method. The thin film was sputtered RF power of Zn/50W and Te/30W, respectively and a substrate temperature of foot under Ar atmosphere of 10mTorr. The energy band gap of the thin film was 1.73ev Then the thin film was annealed at $400^{\circ}C$ for 10sec under a vacuum atmosphere. The energy band gap of 1.67eV was achieved and the film composition ratio of Zn and Te was 32% and 68%. At the best condition, the Solar Cell was manufactured and the efficiency of 6.85% (Voc: 0.69V, Jsc: 21.408㎃/$cm^2$, Fill factor (FF): 0.46) was achieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.12
• /
• pp.831-836
• /
• 2014

One-dimensional (1D) photonic crystals (PCs) were prepared by $TeO_x(2<x<3)/SiO_2$ with the difference refractive index, and fabricated by sputtering technique from a $TeO_2$ and $SiO_2$ target. The $TeO_x$(2$Ar:O_2=40:10$). A 10-pair $TeO_x(2<x<3)/SiO_2$ 1D PCs were fabricated with the structure parameters of filling factor=0.5185, and period=410 nm. The properties of 1D PCs with and without a defect layer were evaluated by UV-VIS-NIR. A normal mode 1D PC have a photonic band gap (PBG) in the near infrared (NIR) region from 1,203 to 1,421 nm. In the case of 1D PC containing a defect layer, a defect level appears at 1,291 nm. The measured transmittance (T) spectra are nearly corresponding to calculated results. After He-Cd laser exposure, the defect level is shifted from 1,291 nm to 1,304 nm.

• Journal of radiological science and technology
• /
• v.43 no.6
• /
• pp.481-487
• /
• 2020

Radiation measurement technology has steadily improved and its usage is expanding in various industries such as nuclear medicine, security search, satellite, nondestructive testing, environmental industries and the domain of nuclear power plants (NPPs). Especially, the simultaneous measurements of gamma rays and neutrons can be even more critical for nuclear safety management of spent nuclear fuel and monitoring of the nuclear material. A semiconductor detector comprising cadmium, zinc, and tellurium (CZT) enables to detect gamma-rays due to the significant atomic weight of the elements via immediate neutron and gamma-ray detection. Semiconductor sensors might be used for nuclear safety management by monitoring nuclear materials and spent nuclear fuel with high spatial resolution as well as providing real-time measurements. We aim to introduce a portable nuclide-analysis device that enables the simultaneous measurements of neutrons and gamma rays using a CZT sensor. The detector has a high density and wide energy band gap, and thus exhibits highly sensitive physical characteristics and characteristics are required for performing neutron and gamma-ray detection. Portable nuclide-analysis device is used on NPP-decommissioning sites or the purpose of nuclear nonproliferation, it will rapidly detect the nuclear material and provide radioactive-material information. Eventually, portable nuclide-analysis device can reduce measurement time and economic costs by providing a basis for rational decision making.

• Journal of Radiation Protection and Research
• /
• v.42 no.2
• /
• pp.114-129
• /
• 2017

Background: The purpose of this paper is to confirm the event timings and the magnitude of fission product aerosol release from the Fukushima accident. Over a few hundreds of technical papers have been published on the environmental impact of Fukushima Daiichi accident since the accident occurred on March 11, 2011. However, most of the research used reverse or inverse method based on the monitoring of activities in the remote places and only few papers attempted to estimate the release of fission products from individual reactor core or from individual spent fuel pool. Severe accident analysis code can be used to estimate the radioactive release from which reactor core and from which radionuclide the peaks in monitoring points can be generated. Materials and Methods: The basic material used for this study are the initial core inventory obtained from the report JAEA-Data/Code 2012-018 and the given accident scenarios provided by Japanese Government or Tokyo Electric Power Company (TEPCO) in official reports. In this research a forward method using severe accident progression code is used as it might be useful for justifying the results of reverse or inverse method or vice versa. Results and Discussion: The release timing and amounts to the environment are estimated for volatile radioactive fission products such as noble gases, cesium, iodine, and tellurium up to 184 hours (about 7.7 days) after earthquake occurs. The in-plant fission product behaviors and release characteristics to environment are estimated using the severe accident progression analysis code, MELCOR, for Fukushima Daiichi accident. These results are compared with other research results which are summarized in UNSCEAR 2013 Report and other technical papers. Also it may provide the physically based arguments for justifying or suspecting the rationale for the scenarios provided in open literature. Conclusion: The estimated results by MELCOR code simulation of this study indicate that the release amount of volatile fission products to environment from Units 1, 2, and 3 cores is well within the range estimated by the reverse or inverse method, which are summarized in UNSCEAR 2013 report. But this does not necessarily mean that these two approaches are consistent.

• Journal of the Korean Chemical Society
• /
• v.50 no.4
• /
• pp.315-320
• /
• 2006

manganese oxides have been prepared by Chimie Douce redox reaction between permanganate and chalcogen element fine powder under acidic condition (pH = 1). According to powder X-ray diffraction analyses, the S- and Se-doped manganese oxides are crystallized with layered birnessite and tunnel-type -MnO2 structures, respectively. On the contrary, Te-doped compound was found to be X-ray amorphous. According to EDS analyses, these compounds contain chalcogen dopants with the ratio of chalcogen/manganese = 4-7%. We have investigated the chemical bonding character of these materials with X-ray absorption spectroscopic (XAS) analysis. Mn K-edge XAS results clearly demonstrated that the manganese ions are stabilized in octahedral symmetry with the mixed oxidation states of +3/+4. On the other hand, according to Se K- and Te L1-edge XAS results, selenium and tellurium elements have the high oxidation states of +6, which is surely due to the oxidation of neutral chalcogen element by the strong oxidant permanganate ion. Taking into account their crystal structures and Mn oxidation states, the obtained manganese oxides are expected to be applicable as electrode materials for lithium secondary batteries.

• Journal of the Korean Vacuum Society
• /
• v.14 no.4
• /
• pp.215-221
• /
• 2005

Thermoelectric bismuth telluride thin films were prepared on $SiO_{2}$/Si substrate with co-sputtering of bismuth and tellurium targets. The effects of deposition temperature on surface morphology, crystallinity and electrical transport properties were investigated. Hexagonal crystallites were clearly visible at the surface of films deposited above $290 ^{\circ}C$. Change of dominant phase from rhombohedral $Bi_2Te_3$ to hexagonal BiTe was confirmed with X-ray diffraction analysis. The deviation from stoichiometric composition at high deposition temperature resulted in the change of structural and electrical characteristics. Seebeck coefficients of all samples have negative value, indicating the prepared $Bi_XTe_Y$ films are n-type thermoelectric. Optimum of Seebeck coefficient and power factor were obtained at the deposition temperature of $225 \^{circ}$C (about -55 $\mu$V/K and $3\times10^{-4}$ W/$k^{2}$m, respectively). Deterioration of thermoelectric properties at higher temperature.

• Journal of the Korean Magnetics Society
• /
• v.17 no.2
• /
• pp.81-85
• /
• 2007

MnTe layers of high crystalline quality were successfully grown on Si(100) : B and Si(111) substrates by molecular beam epitaxy (MBE). Under tellurium-rich condition and the substrate temperature around $400^{\circ}C$, a layer thickness of $700{\AA}$ could be easily obtained with the growth rate of $1.1 {\AA}/s$. We investigated the structural, magnetic and transport properties of MnTe layers by using x-ray diffraction (XRD), superconducting quantum interference device (SQUID) magnetometry, and physical properties measurement system (PPMS). Characterization of MnTe layers on Si(100) : B and Si(111) substrates by XRD revealed a hexagonal structure of polycrystals with lattice parameters, ${\alpha}=4.143{\pm}0.001{\AA}\;and\;c=6.707{\pm}0.001{\AA}$. Investigation of magnetic and transport properties of MnTe films showed anomalies unlike antiferromagnetic powder MnTe. The temperature dependence of the magnetization data taken in zero-field-tooling (ZFC) and field-cooling (FC) conditions indicates three magnetic transitions at around 21, 49, and 210 K as well as the great irreversibility between ZFC and FC magnetization in the films. These anomalies are attributable to a magnetic-elastic coupling in the films. Magnetization measurements indicate ferromagnetic behaviour with hysteresis loops at 5 and 300 K for MnTe polycrystalline film. The coercivity ($H_c$) values at 5 and 300 K are 55 and 44 Oe, respectively. In electro-transport measurements, the temperature dependence of resistivity revealed a noticeable semiconducting behaviours and showed conduction via Mott variable range hopping at low temperatures.