• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.37-43
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• 2020

The effects of O₂ plasma pre-treatment and post-annealing conditions on the interfacial adhesion of Ti thin film and WPR dielectric were investigated using 90° peel test for fan-out wafer level packaging (FOWLP) redistribution layer (RDL) applications. Peel strength between Ti film and WPR dielectric decreased from 8.9±1.3 g/mm to 2.7±0.9 g/mm for variation of O₂ plasma pre-treatment time from 30s to 300s, which is closely related to C-O-C or C=O bonds breakage at the WPR dielectric surface due to excessive plasma pre-treatment conditions. During post-annealing at 150℃, the peel strength abruptly decreased from 0 h to 24 h, and then maintained constant until 100 h, which is also mainly due to the damage of WPR dielectric which is weak to high temperature. Therefore, the optimum plasma pre-treatment conditions on the surface of dielectric is essential to interfacial reliability of FOWLP RDL.

• Journal of the Korea Society of Computer and Information
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• v.20 no.3
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• pp.81-88
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• 2015

Recently the Security fields is emerged as a important issue in the world, While a variety of techniques such as a Cloud Computing or a Internet Of Things appeared. In these circumstances, The domestic security fields are divided into the Information Security, the Physical Security and the Convergence Security. and among these security fields, Convergence security is attracted much attention from various industries. the classification systems of a new field Convergence Security has become a very important criteria such about the Statistics calculation, the Analysis of status industry sector and the Road maps. However, In the domestic, The related institutions classified each other differently the Convergence Security Classification. so it is urgently needed a domestic security fields systematic classification due to the problems such as lack of reliability of the accuracy, compatibility of a data. Therefore, this paper will be analyzed to the characteristics of the domestic security classification systems by the cases. and will be proposed the newly improved classification system, to be possible to addition or deletion of an classification entries, and to be easy expanded according to the new technology trends. this proposed to classification system is expected to be utilized as a basis for the construct of a domestic security classification system in a future.

• Journal of Satellite, Information and Communications
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• v.9 no.3
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• pp.33-40
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• 2014

One of the most important requirements for the Ethernet-based automobile is the reliability. In order to achieve this goal, we propose using the High-availability Seamless Redundancy (HSR) protocol (IEC 62439-3 clause 5) in these networks. The HSR protocol provides duplicated frame copies for each sent frame, which means that the destination node will receive at least one copy in case the second copy is lost due to a failure. In other words, there will be no network stoppage even if failure occurs. Moreover, the destination node will receive at least one frame copy with zero-recovery time (seamless) and it will not need to wait to receive the other copy if the first one is lost, which occurs it in the Ethernet standard, as a result of reconfiguration of the network paths. However, the main drawback of the HSR protocol is the unnecessary redundant traffic that is caused by the duplicated frames. Several solutions, including QR, VRing, RURT, and DVP, have already been proposed to improve the traffic performance of the HSR protocol. In this paper, we propose three automobile network topologies. each of which has pros and cons depending on the automobile requirements. Then we applied the HSR protocol with and without the QR and VRing approaches to each scenario. The comparison among these topologies depend on the traffic performance result for each of them. The QR and VRing approaches give a better traffic reduction percentage, ranging from 48% to 75% compared to the standard HSR protocol. Therefore they could limit the redundant traffic in automobile networks when the HSR protocol is used instead of the Ethernet network, which does not provide any seamless recovery if a failure occurs.

• Journal of radiological science and technology
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• v.38 no.3
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• pp.213-220
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• 2015

This research was study the accuracy of three-dimensional stereotactic breast biopsy, using a core Needle Biopsy and to assess the accuracy of Stereotactic biopsy and Sono guided biopsy. Using Stereotactic QC phantom to measure the accuracy of the 3D sterotactic machine. CT Scan and equipment obtained in the measured X, Y, Z and compares the accuracy of the length. Using Agar power phantom compare the accuracy of the 3D sterotactic machine and 2D ultrasound machine. Z axis measured by the equipment to compare the accuracy and reliability. Check the accuracy by using visual inspection and Specimen Medical application phantom. The accuracy of the 3D sterotactic machine measured by Stereotactic QC phantom was 100%. Accuracy as compared to CT, all of X, Y, Z axis is p > 0.05. The accuracy of the two devices was 100% as measured by Agar powder phantom. There was no difference between t he t wo d evices as C T and p > 0.05. 3D sterotactic machine of the ICC was 0.954, 2D ultrasound machine was 0.785. 2D ultrasound machine was different according to the inspector. Medical application phantom experiments in 3D sterotactic machine could not find the Sliced boneless ham. 2D ultrasound machine has not been able to find a small chalk powder group. The reproducibility of the three-dimensional stereotactic breast biopsy was better than effect of Sono guided biopsy.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.13 no.2
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• pp.87-98
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• 2015

Safety assessments of geological radioactive waste disposal systems, need to consider the abnormal scenario in which a system is impacted by external events in addition to a reference scenario. In this study, the characterization and prediction of an earthquake as an external event which will impact disposal systems were conducted probabilistically and statistically for the safety assessment. The domestic earthquake data were analyzed, and the prediction methodologies of the earthquake were suggested with a computational example. From the results, the earthquake occurrence rates in Korea ranged from 0.4 /yr to 36.2 /yr depending on the data set and the completeness magnitude. From a conservative point of view, the earthquake occurrence rate in the disposal system was suggested as 5.4×10^-4 /yr considering the area of the disposal system. At that time, the completeness magnitude of an earthquake was 2.3. This study will be followed by an appraisal of impacts associated with external events on the geological disposal system, and it will contribute to improvements in reliability of the safety assessment.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.6
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• pp.400-407
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• 2016

The purpose of this study is to propose a useful method of solving the problem of thermal stability in surge protection devices (SPDs). First of all, the existence of the problem in the developed SPDs was confirmed by experiment. After analyzing the problem, a useful method of solving it is proposed and implemented. An experiment is performed to verify the performance of the implemented device. The results of this study are as follows; it is revealed that the problem of the thermal stability results from the varistor, one of the components in the SPD. A varistor with a built-in thermal fuse is applied to the SPD for the purpose of solving the problem. The experimental results confirmed that the thermal stability was improved by replacing the varistor. As a result of this study, the reliability of radar control units is enhanced and the probability of malfunction is reduced.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.12
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• pp.8357-8362
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• 2015

The emergency call device has been installed and operated for the elevator passenger safety, but the call can not be connected or delay to the operator in an emergency. The application of the Internet of Things(IoT) technology is required for the systematic management and reliability of the emergency call device installed in the elevator. To meet these requirements it is necessary to apply the RMS(Remote Management System). Emergency call device periodically reports the operating status information and the emergency call history information of the emergency call device to the RMS in the PSTN(Public Switched Telephone Network) environment, and transmits the call request information in an emergency. RAS(Remote Access Server) plays a role of converting the PSTN signals to TCP / IP. RMS reports a significant outbreak call and abnormal operating conditions to administrators. In this study, we developed optimized protocol to PSTN environment that is required by RMS and implemented its differentiated process. And a RAS-RMS Protocol was added to the Application Layer. Development protocol consisting of simple structure as compared to CoAP, MQTT or HTTP can work properly in low-spec CPU and transmit elevator emergency key information easily.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.1-7
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• 2004

Tin plating on component finishes may grow whiskers under certain conditions, which may cause failures in electronics equipment. To protect the environment, 'lead-free' among component finishes is being promoted worldwide. This paper presents the evaluation results of whiskers on two kinds of lead-free plating materials at the plating temperature and under the reliability test. The rising plating temperature caused increasing the size of plating grain and shorting the growth of whisker. The whisker was grown under the temperature cycling the bent type in matt Sn plating and striated type in malt Sn-Bi. The whisker growth in Sn-Bi plating was shorter than that in Sn plating. In FeNi42 leadframe, the $7.0{\~}10.0{\mu}m$ diameter and the $25.0{\~}45.0{\mu}m$ long whisker was grown under 300 cycles. In the 300 cycles of Cu leadframe, only the nodule(nuclear state) grew on the surface, and in the 600 cycles, a $3.0{\~}4.0{\mu}m$ short whisker grew. After 600 cycles, the ${\~}0.34{\mu}m$ thin $Ni_3Sn_4$ formed on the Sn-plated FeNi42. However, we observed the amount of $0.76{\~}1.14{\mu}m$ thick $Cu_6Sn_5$ and ${\~}0.27{\mu}m$ thin $Cu_3Sn$ intermetallics were observed between the Sn and Cu interfaces. Therefore, the main growth factor of a whisker is the intermetallic compound in the Cu leadframe, and the coefficient of thermal expansion mismatch in FeNi42.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.5
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• pp.187-192
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• 2011

Tilt angle of r-plane wafer is a one of the important factors related with the quality of the GaN epi, so the fine control of the tilt angle is important for the growing of high quality non-polar a-GaN epi. We prepared the R-plane sapphire wafers with slight tilt angles for nonpolar a-plane GaN. The target tilt angles of ${\alpha}$ and ${\beta}$ were 0, -0.1, -0.15, -0.2, -0.4, $-0.6^{\circ}$ and -0.1, 0, $0.1^{\circ}$, respectively. The tilt angles of sliced R-plane sapphire wafers were measured by x-ray and the statistical evaluation of reliability of tilt angles of wafers were performed. The tolerance of the tilt angle was ${\pm}0.03^{\circ}$. R-plane sapphire wafers have relatively large distributions of BOW and TTV data than c-plane sapphire wafers due to the large anisotropy of R-plane. As the tilt angle ${\alpha}$ was increased from -0.1 to $-0.6^{\circ}$, the step widths and heights were decreased from 156 nm to 26 nm and 0.4 nm to 0.2 nm, respectively. The growth and qualities of GaN epi seems to be largely affected by the change of step structure of R-plane sapphire wafers with tilt angle.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.5
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• pp.196-201
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• 2014

We investigated defects and surface polarity in AlN and GaN by using wet chemical etching. Therefore, the effectiveness and reliability of estimating the single crystals by defect selective etching in NaOH/KOH eutectic alloy have been successfully demonstrated. High-quality AlN and GaN single crystals were etched in molten NaOH/KOH eutectic alloy. The etching characteristics and surface morphologies were carried out by scanning electron microscope (SEM) and atomic force microscope (AFM). The etch rates of AlN and GaN surface were calculated by etching depth as a function of etching time. As a result, two-types of etch pits with different sizes were revealed on AlN and GaN surface, respectively. Etching produced hexagonal pits on the metal-face (Al, Ga) (0001) plane, while hexagonal hillocks formed on the N-face. On etching rate calibration, it was found that N-face had approximately 109 and 15 times higher etch rate than the metal-face of AlN and GaN, respectively. The size of etch pits increased with an increase of the etching time and they tend to merge together with a neighbouring etch pits. Also, the chemical mechanism of each etching process was discussed. It was found that hydroxide ion ($OH^-$) and the dangling bond of nitrogen play an important role in the selective etching of the metal-face and N-face.