• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.14-14
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• 2007

• Journal of Advanced Marine Engineering and Technology
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• v.26 no.6
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• pp.622-630
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• 2002

• Review of Korea Contents Association
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• v.16 no.4
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• pp.36-40
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• 2018

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.88-88
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• 2012

High efficiency thin film photovoltaic device technology is reviewed. At present market situation, the industrial players of thin film technologies have to confront the great recession and need to change their market strategies and find technical alternatives again. Most recent technology trends and technical or industrial progress for Silicon thin film and CIGS are introduced and common interests for high efficiency and reliability are discussed.

• Proceedings of the Korean Geotechical Society Conference
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• 2007.09a
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• pp.639-653
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• 2007

Offshore geotechnical site investigation of the seabed ground has been a key factor of the successful construction of various types of offshore structures like as sea-crossing bridges, submerged tunnels, and other marine facilities. Offshore investigations are not easy tasks because of the wave, wind, tidal ebb and flows, and others. Recent developments of offshore equipment including platforms and testing devices like as maine cone penetrator have inspired us to get more reliable characteristics of the seafloor. General information on the offshore site investigations and technical trends concerned are introduced.

• Electronics and Telecommunications Trends
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• v.33 no.6
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• pp.12-23
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• 2018

In this paper, we review the technical trends of diamond and gallium oxide ($Ga_2O_3$) semiconductor technologies among ultra-wide bandgap semiconductor technologies for harsh environments. Diamond exhibits some of the most extreme physical properties such as a wide bandgap, high breakdown field, high electron mobility, and high thermal conductivity, yet its practical use in harsh environments has been limited owing to its scarcity, expense, and small-sized substrate. In addition, the difficulty of n-type doping through ion implantation into diamond is an obstacle to the normally-off operation of transistors. $Ga_2O_3$ also has material properties such as a wide bandgap, high breakdown field, and high working temperature superior to that of silicon, gallium arsenide, gallium nitride, silicon carbide, and so on. In addition, $Ga_2O_3$ bulk crystal growth has developed dramatically. Although the bulk growth is still relatively immature, a 2-inch substrate can already be purchased, whereas 4- and 6-inch substrates are currently under development. Owing to the rapid development of $Ga_2O_3$ bulk and epitaxy growth, device results have quickly followed. We look briefly into diamond and $Ga_2O_3$ semiconductor devices and epitaxy results that can be applied to harsh environments.

• Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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• 2004.04a
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• pp.56-65
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• 2004

The Asia Pacific papermaking giants are China, Japan and Korea followed by Indonesia. The strong trends in recent years have been the move to alkaline/neutral sizing which has assisted the move from kaolin and talc as the major filler minerals to ground calcium carbonate and precipitated calcium carbonate. Kaolin remains important as a constituent in many coating formulations and Chinese-sourced talc, due to its brightness and price will remain important especially in paper filler minerals. The need for ever increasing printing surface quality and continuing efforts by the paper manufacturers to keep costs under control will ensure minerals in papermaking will continue to be a dynamic subject in the years ahead.

• Current Industrial and Technological Trends in Aerospace
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• v.7 no.2
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• pp.25-32
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• 2009

In this paper, the technical trends of the synthetic aperture radar (SAR) were studied by investigating the journals and conference associated with the advanced technology of SAR. SAR has been first demonstrated in 1950. The main objective of SAR development is to overcome the limitations of real aperture radars. From 1950, many new concepts and technologies for SAR system is suggested and realized by many international researchers and engineers. New concepts for future SAR systems represented in the recent conference have been rearranged and analyzed.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.7
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• pp.1363-1374
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• 2009

This paper reviews the characteristics and technical trends in Power MOSFET technology that are leading to improvements in power loss for power electronic system. The silicon bipolar power transistor has been displaced by silicon power MOSFET's in low and high voltage system. The power electronic technology requires the marriage of power device technology with MOS-gated device and bipolar analog circuits. The technology challenges involved in combining power handling capability with finger gate, trench array, super junction structure, and SiC transistor are described, together with examples of solutions for telecommunications, motor control, and switch mode power supplies.

• Current Industrial and Technological Trends in Aerospace
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• v.6 no.2
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• pp.125-132
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• 2008

High speed camera is very important and essential device to analyze the motion of fast moving object in detail. This paper describes the basic concepts of the high speed film camera and high speed digital camera and the history and future technical trends in high speed camera industry. In addition, application field of high speed camera in Korea as well as other countries and future plan to use high speed camera in Naro Space Center has been descried.