• Korean Journal of Applied Biomechanics
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• v.16 no.3
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• pp.137-148
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• 2006

The purpose of this study was to compare muscle activity in the lower extremity during walking wearing jogging and roller shoes. Twelve male middle school students (age: 15.0 yrs, height 173.7 cm, weight 587.7 N) who have no known musculoskeletal disorders were recruited as the subjects. Seven pairs of surface electrodes (QEMG8, Laxtha Korea, gain = 1,000, input impedance >$1012{\Omega}$, CMMR >100 dB) were attached to the right-hand side of the body to monitor the rectus femoris (RF), vastus medialis (VM), vastus lateralis (VL), biceps femoris (BF), tibialis anterior (TA), and medial (GM) and lateral gastrocnemius (GL) while subjects walked wearing roller and jogging shoes in random order at a speed of 1.1 m/s. An event sync unit with a bright LED light was used to synchronize the video and EMG recordings. EMG data were filtered using a 10 Hz to 350 Hz Butterworth band-passdigital filter and further normalized to the respective maximum voluntary isometric contraction EMG levels. For each trial being analyzed, five critical instants and four phases were identified from the recording. Averaged IEMG and peak IEMG were determined for each trial. For each dependent variable, paired t-test was performed to test if significant difference existed between shoe conditions (p<.05). The VM, TA, BF, and GM activities during the initial double limb stance and the initial single limb stance reduced significantly when going from jogging shoe to roller shoe condition. The decrease in EMG levels in those muscles indicated that the subjects locked the ankle and knee joints in an awkward fashion to compensate for the imbalance. Muscle activity in the GM for the roller shoe condition was significantly greater than the corresponding value for the jogging shoe condition during the terminal double limb stance and the terminal single limb stance. Because the subjects tried to keep their upper body weight in front of the hip to prevent falling backward, the GM activity for the roller shoe condition increased. It seems that there are differences in muscle activity between roller shoe and jogging shoe conditions. The differences in EMG pattern may be caused primarily by the altered position of ankle, knee, and center of mass throughout the walking cycle. Future studies should examine joint kinematics during walking with roller shoes.

• Journal of the Korean School Mathematics Society
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• v.14 no.4
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• pp.423-442
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• 2011

The purpose of this study was to examine the effects of tasks setting for mathematical modelling in the complex real situations. The tasks setting(MMa, MeA) in mathematical modelling was so important that we can't ignore its effects to develop meaning and integrate mathematical ideas. The experimental setting were two groups ($N_1=103$, $N_2=103$) at public high school and non-experimental setting was one group($N_3=103$). In mathematical achievement, we found meaningful improvement for MeA group on modelling tasks, but no meaningful effect on information processing tasks. The statistical method used was ACONOVA analysis. Beside their achievement, we were much concerned about their modelling approach that TSG21 had suggested in Category "Educational & cognitive Midelling". Subjects who involved in experimental works showed very interesting approach as Exploration, analysis in some situation ${\Rightarrow}$ Math. questions ${\Rightarrow}$ Setting models ${\Rightarrow}$ Problem solution ${\Rightarrow}$ Extension, generalization, but MeA group spent a lot of time on step: Exploration, analysis and MMa group on step, Setting models. Both groups integrated actively many heuristics that schoenfeld defined. Specially, Drawing and Modified Simple Strategy were the most powerful on approach step 1,2,3. It was very encouraging that those experimental setting was improved positively more than the non-experimental setting on mathematical belief and interest. In our school system, teaching math. modelling could be a answer about what kind of educational action or environment we should provide for them. That is, mathematical learning.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.162-162
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• 1999

초고주파 집적회로의 핵심소자로 각광을 받고 있는 GaAs MESFET(MEtal-emiconductor)은 게이트 형성 공정이 가장 중요하며, WNx 내화금속을 이용한 planar 게이트 구조의 경우 임계전압(Vth:threshold voltage)의 균일도가 우수할 뿐만 아니라 특히 Side-wall을 이용한 self-align 게이트는 소오스 저항을 줄일 수 있어 고성능의 소자 제작을 가능하게 한다.(1) 본 연구의 핵심이 되는 Side-wall을 형성하기 위하여 PECVD법에 의한 SiOx 박막을 증착하고, 건식식각법을 이용하여 SiOx side-wall을 형성하였다. 이 공정을 이용하여 소오스 저항이 낮고 임계전압의 균일도가 우수한 고성능의 self-aligned gate MESFET을 제작하였다. 3inch GaAs 기판상에 이온주입법에 의한 채널 형성, d.c. 스퍼터링법에 의한 WNx 증착, PECVD법에 의한 SiOx 증착, MERIE(Magnetic Enhanced Reactive Ion Etcing)에 의한 Side-wall 형성, LDD(Lightly Doped Drain)와 N+ 이온주입, 그리고 RTA(Rapid Thermal Annealing)를 사용하여 활성화 공정을 수행하였다. 채널은 40keV, 4312/cm2로, LDD는 50keV, 8e12/cm2로 이온주입하였고, 4000A의 SiOx를 증착한 후 2500A의 Side-wall을 형성하였다. 옴익 접촉은 AuGe/Ni/Au 합금을 이용하였고, 소자의 최종 Passivation은 SiNx 박막을 이용하였다. 제작된 소자의 전기적 특성은 hp4145B parameter analyzer를 이용한 전압-전류 측정을 통하여 평가하였다. Side-wall 형성은 0.3$\mu\textrm{m}$ 이상의 패턴크기에서 수직으로 잘 형성되었고, 본 연궁에서는 게이트 길이가 0.5$\mu\textrm{m}$인 MESFET을 제작하였다. d.c. 특성 측정 결과 Vds=2.0V에서 임계전압은 -0.78V, 트랜스컨덕턴스는 354mS/mm, 그리고 포화전류는 171mA/mm로 평가되었다. 특히 본 연구에서 개발된 트랜지스터의 게이트 전압 변화에 따른 균일한 트랜스 컨덕턴스의 특성은 RF 소자로 사용할 때 마이크로 웨이브의 왜곡특성을 없애주기 때문에 균일한 신호의 전달을 가능하게 한다. 0.5$\mu\textrm{m}$$\times$100$\mu\textrm{m}$ 게이트 MESFET을 이용한 S-parameter 측정과 Curve fitting 으로부터 차단주파수 fT는 40GHz 이상으로 평가되었고, 특히 균일한 트랜스컨덕턴스의 경향과 함께 차단주파수 역시 게이트 바이어스, 즉 소오스-드레스인 전류의 변화에 따라 균일한 값을 보였다. 본 연구에서 개발된 Side-wall 공정은 게이트 길이가 0.3$\mu\textrm{m}$까지 작은 경우에도 사용가능하며, WNx self-align gate MEESFET은 낮은 소오스저항, 균일한 임계전압 특성, 그리고 높고 균일한 트랜스 컨덕턴스 특성으로 HHP(Hend-Held Phone) 및 PCS(Personal communication System)와 같은 이동 통신용 단말기의 MMICs(Monolithic Microwave Integrates Circuits)의 제작에 활용될 것으로 기대된다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.11a
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• pp.11-11
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• 2000

이동통신기술의 급격한 발달로 고주파회로의 packaging과 interconnect 기술의 고성능화 와 저가격화에 대한 새로운 도전이 요구되고 있다‘ 대부분 기존의 무선통신 부품은 P PCB(Printed Wiring Board)기술을 활용하고 있으나 이러한 기술이 점차로 고주파화되는 경 향을 만족시킬수 없어 새로운 고주파 부품기술이 요구되고 있는 실정이다 .. RF 회로를 구성 하기 위하여 PCB소재의 환경적, 치수안정성 문제를 극복하기 위하여 L TCC(Low T Temperature Cofired Ceramics)기술이 최근 주목을 받고 있다. 차세대 이동통신 기술은 수십 GHz 이상의 고주파특성이 우수하고, 고성능의 초소형의 부품을 저가격으로 제조할수 있으며, 시장의 변화에 기민하게 대처할수 있는 기술이 요구되 고 있으며, 이러한 기술적 필요성에 부합할수 있도록 LTCC 기술이 제안되었다. 이러한 C Ceramic Interconnect 기술은 높은 신뢰성을 바탕으로 fine patterning 기술과 저가의 m metallizing 기술로 가능하게 되었다. 초고주파 통신부품기술은 미국과 유럽 등을 중심으로 G GHz 대역또는 mm wave 대역의 기술에 대하여 치열한 기술개발 경쟁을 벌이고 있으며, 이 러한 고주파 패키징 기술을 바탕으로 미래의 군사, 항공, 우주 및 이동통신 기술에 지대한 영향을 미칠수 있는 기반기술로 자리잡을 전망이다. L LTCC 기술은 기존의 후막혼성기술에 비하여 공정이 단순하고 대량생산이 가능하고 가 격이 비교적 저렴하다. 또한 다층구조로 제작할수 있고, 수동소자를 내장할수 있어 회로의 소형화와 고밀도화가 가능하다. 특히 무선으로 초고속 정보를 처리하기 위하여 이동통신기 기의 고주파화가 빠르게 진행됨에 따라서 고분자재료에 비하여 고주파특성이 우수할뿐아니 라 환경적, 치수안정성이 우수한 세라믹소재플 사용함으로써 고주파 손실율을 저감할 수 있 다 .. LTCC 기술은 후막회로 기술과 tape dielectric 기술이 결합된 기술이다. 표준화된 소재 와 공정기술을 활용하여 저가격으로 고성능소자플 제작할 수 있으며, 전극재료로서 높은 전 도도를 갖고 있는 Ag, Cu, Au 및 Pd! Ag릎 사용함으로써 고주파 손실을 저감시킬 수 있다. L LTCC 기술이 최종적으로 소형화, 고기능 고주파 부품기술로 지속적으로 발전하기 위하여 무수축(Zero shrinkage) 소성기술, 광식각 후막기술 등이 원천기술로서 확립될 수 있어야 하 며, 특히 국내의 이동통신 기술에 대한 막대한 투자에도 불구하고 차세대 이동통신 부품기 술에 대한 개발은 상대적으로 미흡한 실정이므로 국내에 LTCC 관련 소재공정 및 부품소자 기술에 대한 개발투자가 시급히 이루워져야 할 것으로 판단된다. 본 발표에서는 지금까지 국내외 LTCC 기술의 발전과정을 정리하였고, 현재 이 기술의 응용과 소재와 공정을 중심으로한 개발현황에 대하여 조사하였으며, 앞으로 LTCC가 발전 해야할 방향을 제시하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.335-335
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• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Proceedings of the Plant Resources Society of Korea Conference
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• 1999.10a
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• pp.46-57
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• 1999

Ginseng(Panax ginseng C.A. Meyer) is important medicinal plant but requires 4-year cultivation for root harvest because of slow growth. In contrast, ginseng callus and hairy roots grow vigorously and may Produce the same or more biologically active compounds for human health than natural ginseng roots. Therefore, ginseng callus and hairy roots can be used for commercial purposes. Polyacetylene, one of anti-cancer compounds in ginseng, was not detected in the callus cultured on the medium containing 2, 4-B, but cells derived from the callus growth was excellent, The ginseng calli cultured on the medium containing 2mg11 CPA and 0.05mg/1 BA was grown vigorously and produced panaxydol, one of ginseng polyacetylene. The biosynthesis of polyacetylene in callus was not affected by addition of NAA and sucrose in media. The SH medium was better than the MS medium for ginseng callus growth and biosynthesis of panaxydol. Another ginseng anti-cancer compounds, ginsenoside-Rg$_3$, Rh$_1$and Rh$_2$ were detected in ginseng hairy roots by heat treatment. Those of Panax ginseng were obtained after root disks of three-year old roots were infected with Agrobacterium rhizogenes Rl000 $A_4$T in dark condition after one month of culture. The optimum growth of hairy roots was achieved in the culture of 1/2 MS liquid medium in dark(22$^{\circ}C$) under 60 rpm gyratory shaking. Hairy roots grew well in 5 ι Erlenmeyer flasks, 1ι roller drums, 10ι jar-fermenters, and especially in 20ι air-lift .culture vessels. All heat treatments had remarkably different ginsenoside contents. Eleven ginsenosides were determined in heat treatment, eight in freeze dried hairy roots. Contents of ginsenoside-Rbl , Rb2, Rc, Rd. Re, Rf, and Rg$_1$tested in all heat treatments were less than those of freeze dried hairy roots. Contents of glnsenoside-Rg$_2$ in heat treatment for 1 hour at 105$^{\circ}C$ was 4.92mg/g dry wt, 3.9 times higher than 1.27 mg/g dry wt of freeze dried hairy roots. The optimum condition of heat treatment for the production of ginsenoside-Rg$_3$and Rhl was 2 hours at 105$^{\circ}C$, and ginsenoside content was 2.58mg/g dry wt and 3.62mg/g dry wt, respectively. The production of ginsenoside-Rh2 was the highest in heat treatment for 2 hours at 105$^{\circ}C$ among treatments examined, and ginsenoside-Rh$_2$content was 1.08mg/g dry wt.

• Journal of electromagnetic engineering and science
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• v.1 no.1
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• pp.73-77
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• 2001

We studied the fabrication of GaAs-based pseudomorphic high electron mobility transistors(PHEMT`s) for the purpose of millimeter- wave applications. To fabricate the high performance GaAs-based PHEMT`s, we performed the simulation to analyze the designed epitaxial-structures. Each unit processes, such as 0.1 m$\mu$$\Gamma$-gate lithography, silicon nitride passivation and air-bridge process were developed to achieve high performance device characteristics. The DC characteristics of the PHEMT`s were measured at a 70 $\mu$m unit gate width of 2 gate fingers, and showed a good pinch-off property ($V_p$= -1.75 V) and a drain-source saturation current density ($I_{dss}$) of 450 mA/mm. Maximum extrinsic transconductance $(g_m)$ was 363.6 mS/mm at $V_{gs}$ = -0.7 V, $V_{ds}$ = 1.5 V, and $I_{ds}$ =0.5 $I_{dss}$. The RF measurements were performed in the frequency range of 1.0~50 GHz. For this measurement, the drain and gate voltage were 1.5 V and -0.7 V, respectively. At 50 GHz, 9.2 dB of maximum stable gain (MSG) and 3.2 dB of $S_{21}$ gain were obtained, respectively. A current gain cut-off frequency $(f_T)$ of 106 GHz and a maximum frequency of oscillation $(f_{max})$ of 160 GHz were achieved from the fabricated PHEMT\\`s of 0.1 m$\mu$ gate length.h.

• Journal of Adhesion and Interface
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• v.2 no.2
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• pp.1-10
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• 2001

Silica for Epoxy Molding Compound (EMC) was coated via plasma-polymerization with RF plasma (13.56 MHz) as a function of treatment time, power and pressure. 1,3-diaminopropane, allylamine, pyrrole, 1,2-epoxy-5-hexene, allylmercaptan or allylalcohol were utilized for plasma polymerization coating and adhesion of coated silica was evaluated by measuring flexural strength. CTE and water absorption of EMC were also measured, and fracture surface of flexural specimen was analyzed by SEM in order to elucidate the failure mode. The plasma polymer coated silica was analyzed by FT-IR and reactivity of plasma polymer coating with epoxy resin was evaluated with DSC in order to investigate the adhesion mechanism. The EMC prepared from the silica coated with 1,3-diaminopropane or allylamine exhibited high flexural strength, low CTE, and low water absorption compared with the control sample, and also exhibited 100% cohesive failure mode. These results can be attributed to the chemical reaction between the functional groups in the plasma polymer coating and epoxy resin, and also consistent with the results from FT-IR and DSC analysis.

• Journal of Biomedical Engineering Research
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• v.27 no.5
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• pp.203-209
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• 2006

The aim of this study is to investigate the feasibility of ex vivo MR diffusion tensor imaging technique in order to observe the diffusion-contrast characteristics of human gastric tissues. On normal and pathologic gastric tissues, which have been fixed in a polycarbonate plastic tube filled with 10% formalin solution, laboratory made 3D diffusion tensor Turbo FLASH pulse sequence was used to obtain high resolution MR images with voxel size of $0.5{\times}0.5{\times}0.5mm^3\;using\;64{\times}32{\times}32mm^3$ field of view in conjunction with an acquisition matrix of $128{\times}64{\times}64$. Diffusion weighted- gradient pulses were employed with b values of 0 and $600s/mm^2$ in 6 orientations. The sequence was implemented on a clinical 3.0-T MRI scanner(Siemens, Erlangen, Germany) with a home-made quadrature-typed birdcage Tx/Rx rf coil for small specimen. Diffusion tensor values in each pixel were calculated using linear algebra and singular value decomposition(SVD) algorithm. Apparent diffusion coefficient(ADC) and fractional anisotropy(FA) map were also obtained from diffusion tensor data to compare pixel intensities between normal and abnormal gastric tissues. The processing software was developed by authors using Visual C++(Microsoft, WA, U.S.A.) and mathematical/statistical library of GNUwin32(Free Software Foundation). This study shows that 3D diffusion tensor Turbo FLASH sequence is useful to resolve fine micro-structures of gastric tissue and both ADC and FA values in normal gastric tissue are higher than those in abnormal tissue. Authors expect that this study also represents another possibility of gastric carcinoma detection by visualizing diffusion characteristics of proton spins in the gastric tissues.