• BMB Reports
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• 제39권1호
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• pp.61-67
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• 2006

Molecular co-suppression phenomena are important to consider in transgene experiments. Embryogenic cells were obtained from immature cotyledons and engineered with two different gene constructs (pHV and pHVS) through particle bombardment. Both constructs contain a gene conferring resistance to hygromycin (hpt) as a selective marker and a modified glycinin (11S globulin) gene (V3-1) as a target. sGFP(S65T) as a reporter gene was, however, inserted into the flanking region of the V3-1 gene (pHVS). Fluorescence microscopic screening after the selection of hygromycin, identified clearly the expression of sGFP(S65T) in the transformed soybean embryos bombarded with the pHVS construct. Stable integration of the transgenes was confirmed by polymerase chain reaction (PCR) and Southern blot analysis. Seeds of transgenic plants obtained from the pHV construct frequently lacked an accumulation of endogenous glycinin, which is encoded by homologous genes to the target gene V3-1. Most of the transgenic plants expressing sGFP(S65T) showed highly accumulation of glycinin. The expression of sGFP(S65T) and V3-1 inherits into the next generations. sGFP(S65T) as a reporter gene may be useful to increase the transformation efficiency of transgenic soybean with avoiding gene co-suppression.

• 대한전기학회논문지
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• 제41권1호
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• pp.50-55
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• 1992

Piezoelectric Buzzer which has been generally used requires about 30kV/cm poling process and has the aging effects. In this study, 0.85 PZN - 0.10 BT - 0.05 PT system ceramics with additives of 0 - 2 wt% YS12TOS13T were fabricated and investigated on electromechanical coupling coefficient(kS1pT), electric field induced charge coefficient(dS131T), and sound level. As the results, in the 0.4 wt% YS12TOS13T added composition ceramics compared with the basic, kS1pT was increased from 0.355 to 0.39 and induced piezoelectric d constant increased from 204 to 220 x 10S0-12T (C/N) and sound level of electrostrictive Buzzer has the highest value of 71.5 dB under 8kV/cm bias electric field.

• 대한환경공학회지
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• 제28권3호
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• pp.286-291
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• 2006

본 연구에서는 축산폐수와 하수의 연계처리 가능성을 연구하였다 축산폐수와 하수를 2:1로 혼합하고 응집제인 BF02와 응집보조제인 양이온 polymer인 C-210EL를 각각 2 mL, 100 mL씩 주입시 SS 97.6%, T-P 95%로 최적 제거효율을 보였다. Phanerochaete chrysosporium PSBL-1의 처리 특성을 살펴보기 위해서 전처리수를 축산폐수 원수에 대해 10배 희석되도록 하수와 혼합($\fallingdotseq$전처리수:하수=3:17)하였다. 이렇게 혼합된 폐수의 NBDCOD, $NH_3-N$, T-N의 제거율은 pH가 증가할수록 증가하였다. 즉, T-N 농도는 pH 6.7(5일 경과시), pH 8.0(3일 경과시), pH 10.0(1일 경과시)에서 각각 35 mg/L, 51 mg/L, 33 mg/L으로 축산폐수공공처리시설의 방류수허용기준 60 mg/L을 만족하였다. 또한 모든 pH(1일 경과시)에서 $COD_{Mn}$의 방류수허용기준 40 mg/L을 만족했다. V.A.(veratryl alcohol) 첨가시 V.A.를 첨가하지 않은 조건보다 유출수의 유기물 및 질소농도가 높게 측정되었다. $COD_{Mn}$은 C/N비(3:1)를 조절하지 않은 경우 1일 이후, T-N은 C/N비를 $4{\sim}6$으로 조절한 경우 2일 후에 축산폐수공공처리시설 방류수수질기준을 만족하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.870-873
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• 2001

The electron drift mobilitity of poly(4,4'-cyclohexylidenediphenyl carbonate)(PC-Z) doped with 3,5-dimethyl-3',5'-di-t-butylstilbenequinone(MBSQ) was measured by the time-of-flight technique. Energy gap of the polymer doped with 25wt% of MBSQ was 3.1 eV. The electron drift mobility was 2.98${\times}$10$\^$-6/$\textrm{cm}^2$/V$.$s at 293K. The electric field and temperature dependences of the electron drift mobility were discussed with Poole-Frenkel and Arrhenius formulations. The activation energy(E$\_$0/), Poole-Frenkel coefficient(${\beta}$) and effective temperature(T$\_$eff/) of the mobility are 0.815 eV, 1.73${\times}$10$\_$-4/ eV$.$cm$\^$1/2//V$\_$1/2/ and 6.43${\times}$10$^2$K, respectively.

• 대한수학회지
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• 제31권3호
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• pp.521-537
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• 1994

We consider the Schrodinger equation of quantum mechanics $$ i\hbar\frac{\partial t}{\partial}\Gamma(t, \vec{\eta}) = -\frac{2m}{\hbar}\Delta(t, \vec{\eta}) + V(\vec{\eta}\Gamma(t, \vec{\eta}) (1.1) $$ $$ \Gamma(0, \vec{\eta}) = \psi(\vec{\eta}), \vec{\eta} \in R^n $$ where $\Delta$ is the Laplacian on $R^n$, $\hbar$ is Plank's constant and V is a suitable potential.

• 대한수학회보
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• 제32권2호
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• pp.179-189
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• 1995

Let $V \subset R^n$ be a convex homogeneous cone which does not contain straight lines, so that the automorphism group $$ G = Aut(R^n, V)^\circ = { g \in GL(R^n) $\mid$ gV = V}^\circ $$ ($\circ$ denoting the identity component) acts transitively on V. A convex cone V is called "self-dual" if V coincides with its dual $$ (1.1) V' = { x' \in R^n $\mid$ < x, x' > > 0 for all x \in \bar{V} - {0}} $$ where $\bar{V}$ denotes the closure of V.sure of V.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권3호
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• pp.274-283
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• 2014

In this paper, the epi layer of npn SOI HBT with n+ buried layer has been studied through Sentaurus process and device simulator. The doping value of the deposited epi layer has been varied for the npn HBT to achieve improved $f_tBV_{CEO}$ product (397 GHzV). As the $BV_{CEO}$ value is higher for low value of epi layer doping, higher supply voltage can be used to increase the $f_t$ value of the HBT. At 1.8 V $V_{CE}$, the $f_tBV_{CEO}$ product of HBT is 465.5 GHzV. Further, the film thickness of the epi layer of the SOI HBT has been scaled for better performance (426.8 GHzV $f_tBV_{CEO}$ product at 1.2 V $V_{CE}$). The addition of this HBT module to fully depleted SOI CMOS technology would provide better solution for realizing wireless circuits and systems for 60 GHz short range communication and 77 GHz automotive radar applications. This SOI HBT together with SOI CMOS has potential for future high performance SOI BiCMOS technology.

• 대한수학회보
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• 제47권3호
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• pp.467-482
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• 2010

For a double array of random elements {$V_{mn};m{\geq}1,\;n{\geq}1$} in a real separable Banach space, some mean convergence theorems and weak laws of large numbers are established. For the mean convergence results, conditions are provided under which $k_{mn}^{-\frac{1}{r}}\sum{{u_m}\atop{i=1}}\sum{{u_n}\atop{i=1}}(V_{ij}-E(V_{ij}|F_{ij})){\rightarrow}0$ in $L_r$ (0 < r < 2). The weak law results provide conditions for $k_{mn}^{-\frac{1}{r}}\sum{{T_m}\atop{i=1}}\sum{{\tau}_n\atop{j=1}}(V_{ij}-E(V_{ij}|F_{ij})){\rightarrow}0$ in probability where {$T_m;m\;{\geq}1$} and {${\tau}_n;n\;{\geq}1$} are sequences of positive integer-valued random variables, {$k_{mn};m{{\geq}}1,\;n{\geq}1$} is an array of positive integers. The sharpness of the results is illustrated by examples.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권1호
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• pp.37-50
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• 2009

Evaluation results about area scaling capabilities of various SRAM margin-assist techniques for random $V_T$ variability issues are described. Various efforts to address these issues by not only the cell topology changes from 6T to 8T and 10T but also incorporating multiple voltage-supply for the cell terminal biasing and timing sequence controls of read and write are comprehensively compared in light of an impact on the required area overhead for each design solution given by ever increasing $V_T$ variation (${\sigma}_{VT}$). Two different scenarios which hinge upon the EOT (Effective Oxide Thickness) scaling trend of being pessimistic and optimistic, are assumed to compare the area scaling trends among various SRAM solutions for 32 nm process node and beyond. As a result, it has been shown that 6T SRAM will be allowed long reign even in 15 nm node if ${\sigma}_{VT}$ can be suppressed to < 70 mV thanks to EOT scaling for LSTP (Low Standby Power) process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 A
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• pp.362-364
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• 2005

전력계통이 대형화되고 복잡 고도화 되는 추세에 따라 전력계통운용에서 송전선로 보호시스템의 중요도가 매우 커지게 되었다. 이에 국내에 적용되기 시작한 765kV 전력계통망은 하위 전압계급 계통망에 미치는 영향이 커지게 되어 765kV 송전선로 보호시스템의 보호 신뢰도 향상은 전력계통을 안정적으로 운전하는 데 있어서 매우 중요한 요소가 되었다. 지난 2004년 11월에 신태백-신가평변전소간 765kV신태백T/L의 상업 운전이 시작되었고 그 상업운전 중 2005년 3월 낙뢰사고에 의한 765kV신태백T/L의 고장이 발생하였다. 이에 본 논문에서는 신태백T/L의 고장이 발생에 대한 보호시스템의 동작 상태를 분석한 사례에 대해서 기술하였다.