• Carbon letters
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• v.13 no.2
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• pp.73-87
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• 2012

Graphene is the thinnest known materials in the universe and the strongest ever measured. Graphene has emerged as an exotic material of the 21st century and received world-wide attention due to its exceptional charge transport, thermal, optical, mechanical, and adsorptive properties. Recently, graphene and its derivatives are considered promising candidates as adsorbent for $H_2$ storage, $CO_2$ capture, etc. and as the sensors for detecting individual gas molecule. The main purpose of this review is to comprehensive the synthesis method of graphene and to brief the adsorption behaviors of graphene and its derivatives.

• Journal of Industrial Technology
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• v.35
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• pp.89-94
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• 2015

Graphene is a carbon-based two dimensional honeycomb lattice with monoatomic thickness and has attracted much attention due to its superior mechanical, electronic, and physical properties. Here, we present a synthesis of high quality graphene on Pt substrate using a chemical vapor deposition (CVD). We optimized synthesis condition with various parameters such as synthesis temperature, time, and cooling rate. Based on the results, we concluded that graphene synthesis is driven by mainly carbon adsorption on surface rather than precipitation of carbon which is dominant in other metal substrate. In addition, Pt substrate can be repeatedly used several times with high quality graphene.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.433.1-433.1
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• 2014

The research of graphene, a monolayer of carbon atoms with honeycomb lattice structure, has explosively increased after appeared in 2004. As a result, its high transmittance, mobility, thermal conductivity, and outstanding mechanical and chemical stability have been proved. Especially, many researches were executed about the field of transparent electrode highlighting material of substituting the indium tin oxide (ITO). In addition, qualitative and quantitative improvements have been achieved due to many synthesis methods were discovered. Among them, mostly used method is chemical vapour deposition of graphene grown on copper or nickel. The transmittance, mobility, sheet resistance, and other many properties are completely changed according to these two types of synthesis method of graphene. In this research, considering the difference of characteristics as the synthesis method of graphene, what types of graphene should be used and how to use it were studied. The stacked graphene harvested on copper and multi-layer graphene harvested on nickel were compared and analyzed, as a result, the transmittance of 90% and the sheet resistance of $70{\Omega}{\square}$ was showed even though stacked graphene layers were 4 layers. The reason that could bring these results is lowered sheet resistance due to stacked monolayer graphenes. Moreover, light output power of the three stacked graphene spreading layer shows the highest value, but light-emitting diode with multi-layer graphene died out from 12mA due to also its high sheet resistance. Therefore, we need to clarify about what types of graphene and how to use the graphene in use.

• Journal of Power System Engineering
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• v.18 no.6
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• pp.7-12
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• 2014

The effect of various synthesis conditions in the fabrication of graphene using the exfoliation methods has been investigated. Graphite oxide and graphene fabricated by various synthesis conditions were identified by SEM and XRD. Graphite oxide was made from graphite by the chemical oxidation, and graphene was manufactured from graphite oxide by thermal exfoliation method. As a result, it is confirmed that graphite oxide was well formed from graphite, and the graphene could be obtained from graphite oxide. And it was found that the interlayer spacing between the graphene layers depended on the reaction time and particle size, regardless of the reaction temperature from $5^{\circ}C$ to $25^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.

• Korean Journal of Materials Research
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• v.22 no.3
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• pp.130-135
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• 2012

We present a method of graphene synthesis with high thickness uniformity using the thermal chemical vapor deposition (TCVD) technique; we demonstrate its application to a grid supporting membrane using transmission electron microscope (TEM) observation, particularly for nanomaterials that have smaller dimensions than the pitch of commercial grid mesh. Graphene was synthesized on electron-beam-evaporated Ni catalytic thin films. Methane and hydrogen gases were used as carbon feedstock and dilution gas, respectively. The effects of synthesis temperature and flow rate of feedstock on graphene structures have been investigated. The most effective condition for large area growth synthesis and high thickness uniformity was found to be $1000^{\circ}C$ and 5 sccm of methane. Among the various applications of the synthesized graphenes, their use as a supporting membrane of a TEM grid has been demonstrated; such a grid is useful for high resolution TEM imaging of nanoscale materials because it preserves the same focal plane over the whole grid mesh. After the graphene synthesis, we were able successfully to transfer the graphenes from the Ni substrates to the TEM grid without a polymeric mediator, so that we were able to preserve the clean surface of the as-synthesized graphene. Then, a drop of carbon nanotube (CNT) suspension was deposited onto the graphene-covered TEM grid. Finally, we performed high resolution TEM observation and obtained clear image of the carbon nanotubes, which were deposited on the graphene supporting membrane.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.157-157
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• 2011

Graphene has generated significant interest in the recent years as a functional material for electronics, sensing, and energy applications due to its unique electrical, optical, and mechanical properties. Much of the considerable interest in graphene stems from results obtained for samples mechanically exfoliated from graphite. Practical applications, however, require reliable and well-controlled methods for fabrication of large area graphene films. Recently high quality graphene layers were fabricated using chemical vapor deposition (CVD) on nickel and copper with methane as the source of the carbon atoms. Here, we report a simple and efficient method to synthesize graphene layers using solid carbon source. Few-layer graphene films are grown using filtered vacuum arc source (FVAS) technique by evaporation of carbon atom on Ni catalytic metal and subsequent annealing of the samples at 800$^{\circ}$C. In our system, carbon atoms diffuse into the Ni metal layer at elevated temperatures followed by their segregation as graphene on the free surface during the cooling down step as the solubility of carbon in the metal decrease. For a given annealing condition and cooling rate, the number of graphene layers is easily controlled by changing the thickness of the initially evaporated amorphous carbon film. Based on the Raman analysis, the quality of graphene is comparable to other synthesis methods found in the literature, such as CVD and chemical methods.

• Journal of the Korean Ceramic Society
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• v.48 no.2
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• pp.147-151
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• 2011

In this study, we prepared graphene by using the modified Hummers-Offeman method and then introduced the metals (Pt, Pd and Fe) for dispersion on the surface of the graphene for synthesis of metal-graphene composites. The characterization of the prepared graphene and metal-graphene composites was performed by X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive X-ray (EDX) analysis and transmission electron microscopy (TEM). According to the results, it can be observed that the prepared graphene consists of thin stacked flakes of shapes having a well-defined multilayered structure at the edge. And the metal particles are dispersed uniformly on the surface of the graphene with an average particle size of 20 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.344.1-344.1
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• 2016

Recently, graphene has shown great characteristic of electrical conductivity, strength, and elasticity. However, due to edge unstable and metallic properties, it is difficult to use as a semiconductor devices. The solution of such problems has been sought a way to use the boron nitride in a stacked layer structure. By graphene and boron nitride stacked layer structure on silicon substrate, the electron mobility is improved and deteriorated results in semiconductor properties. In this study, to make layered structure, we developed direct synthesis method for graphene on boron nitride. By using Raman technique, the directly stacked layer structure is in good agreement with measurements on each of the attributes.

• Carbon letters
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• v.14 no.3
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• pp.145-151
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• 2013

Graphene is a fascinating material with excellent electrical, optical, mechanical, and chemical properties. Remarkable progress has been made in the development of methods for synthesizing large-area, high-quality graphene. Recently, the chemical vapor deposition method has opened up the possibility of using graphene for electronic devices and other applications. This review covers simple and inexpensive methods to grow graphene using polymers as solid carbon sources; which do not require an additional process to transfer graphene from the growth substrate to the receiver substrate.