• Proceedings of the IEEK Conference
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• 2000.07a
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• pp.129-131
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• 2000

A new analog synchronous mirror delay to be used in the wide-bandwidth clocking circuits is proposed to overcome the frequency dependency of the negative-delay values in the conventional analog synchronous mirror delay. The scheme adopts a new dummy-delay compensation technique by adopting the comparator with inherent systematic offset to achieve the enhanced negative-delay range especially prominent at high frequency applications.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.29-34
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• 2005

This paper describes a novel internal clock generator, called duty cycle-corrected analog synchronous mirror delay (DCC-ASMD). The proposed circuit is well suited for dual edge-triggered systems such as double data-rate synchronous DRAM since it can achieve clock synchronization within two clock cycles with accurate duty cycle correction. To evaluate the performance of the proposed circuit, DCC-ASMD was designed using a $0.35\mu$m CMOS process technology. Simulation results show that the proposed circuit generates an internal clock having $50\%$ duty ratio within two clock cycles from the external clock having duty ratio range of $40\;\~\;60$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.7
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• pp.43-49
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• 2000

We proposed ADD(Alternate Directional Delay) circuit technique as the DLL(Delay Locked Loop) circuits which technique is established the data valid window(tDV) in DDR(Double Data Rate) Synchronous DRAM. This technique could be decrease area-overhead which it could generated bidirectional clock simultaneously using only one delay chain block. In this paper for high speed memory with relatively small size. This technique decreased area-overhead more 2 times than SMD(Synchronous Mirror Delay) technique. ADD technique has 50ps-140ps jitter and the operation frequency has 166MHz-66MHz range.(at 2.5V, TYP. condition)

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.63-68
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• 2004

A high-resolution synchronous mirror delay (SMD) is proposed in order to reduce the clock skew between the external clock and the infernal clock of a chip. The proposed SMD reduces the clock skew in two steps. Coarse locking is achieved by the SMD. Fine locking is achieved by the successive approximation register-controlled DLL. The total locking time is 10 clock cycles. Simulation results show that the proposed SMD operates with 50psec clock skew at 182MHz and consumes 17.5mW at 3.3V supply voltage in a 0.35 um 1-poly 4-metal CMOS technology.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.3
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• pp.44-54
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• 2000

In this paper, a design methodology for the frequency-adaptive negative-delay circuit which can be implemented in standard CMOS memory process is proposed. The proposed negative-delay circuit which is a basic type of the analog SMD (synchronous mirror delay) measures the time difference between the input clock period and the target negative delay by utilizing analog behavior and repeats it in the next coming cycle. A new technology that compensates the auxiliary delay related with the output clock in the measure stage differentiates the Proposed method from the conventional method that compensates it in the delay-model stage which comes before the measure stage. A wider negative-delay range especially prominent in the high frequency performance than that in the conventional method can be realized through the proposed technology. In order to implement the wide locking range, a new frequency detector and the method for optimizing the bias condition of the analog circuit are suggested. An application example to the clocking circuits of a DDR SDRAM is simulated and demonstrated in a 0.6 ${\mu}{\textrm}{m}$ n-well double-poly double-metal CMOS technology.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.8
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• pp.46-51
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• 2002

A new interleaved synchronous mirror delay(SMD) is proposed in order to reduce the circuit size and the power. The conventional interleaved SMD has multiple pairs of forward delay array(FDA) and backward delay away(BDA) in order to reduce the jitter. The proposed interleaved SMD. requires one FDA and one BDA by changing the position of multiplexer. Moreover, the proposed interleaved SMD solves the polarity problem with just one extra inverter. Simulation results show that about 30% power reduction and 40% area reduction are achieved in the proposed interleaved SMD. All circuit simulations and implementations are based on a 0.25um two-metal CMOS technology.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.6
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• pp.1133-1138
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• 2007

DLLs(Delay Locked Loops) have widely been used in many systems in order to achieve the clock synchronization. A SMD (Synchronous Mirror Delay) structure is used both for skew reduction and for DCC (Duty Cycle Correction). In this paper, a SMD based DLL with DCC using Reduced Delay Lines is proposed in order to reduce the clock skew and correct the duty cycle. The merged structure allows the forward delay array to be shared between the DLL and the DCC, and yields a 25% saving in the number of the required delay cells. The designed chip was fabricated using a $0.25{\mu}m$ 1-poly, 4-metal CMOS process. Measurement results showed the 3% duty cycle error when the input signal ranges from 80% to 20% and the clock frequency ranges from 400MHz to 600MHz. The locking operation needs 3 clock and duty correction requires only 5 clock cycles as feature with SMD structure.