• Title/Summary/Keyword: synchronous dynamic random access memory

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Heavy-Ion Radiation Characteristics of DDR2 Synchronous Dynamic Random Access Memory Fabricated in 56 nm Technology

  • Ryu, Kwang-Sun;Park, Mi-Young;Chae, Jang-Soo;Lee, In;Uchihori, Yukio;Kitamura, Hisashi;Takashima, Takeshi
    • Journal of Astronomy and Space Sciences
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    • v.29 no.3
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    • pp.315-320
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    • 2012
  • We developed a mass-memory chip by staking 1 Gbit double data rate 2 (DDR2) synchronous dynamic random access memory (SDRAM) memory core up to 4 Gbit storage for future satellite missions which require large storage for data collected during the mission execution. To investigate the resistance of the chip to the space radiation environment, we have performed heavy-ion-driven single event experiments using Heavy Ion Medical Accelerator in Chiba medium energy beam line. The radiation characteristics are presented for the DDR2 SDRAM (K4T1G164QE) fabricated in 56 nm technology. The statistical analyses and comparisons of the characteristics of chips fabricated with previous technologies are presented. The cross-section values for various single event categories were derived up to ~80 $MeVcm^2/mg$. Our comparison of the DDR2 SDRAM, which was fabricated in 56 nm technology node, with previous technologies, implies that the increased degree of integration causes the memory chip to become vulnerable to single-event functional interrupt, but resistant to single-event latch-up.

Development of Memory Controller for Punctuality Guarantee from Memory-Free Inspection Equipment using DDR2 SDRAM (DDR2 SDRAM을 이용한 비메모리 검사장비에서 정시성을 보장하기 위한 메모리 컨트롤러 개발)

  • Jeon, Min-Ho;Shin, Hyun-Jun;Jeong, Seung-Heui;Oh, Chang-Heon
    • Journal of Advanced Navigation Technology
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    • v.15 no.6
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    • pp.1104-1110
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    • 2011
  • The conventional semiconductor equipment has adopted SRAM module as the test pattern memory, which has a simple design and does not require refreshing. However, SRAM has its disadvantages as it takes up more space as its capacity becomes larger, making it difficult to meet the requirements of large memories and compact size. if DRAM is adopted as the semiconductor inspection equipment, it takes up less space and costs less than SRAM. However, DRAM is also disadvantageous because it requires the memory cell refresh, which is not suitable for the semiconductor examination equipments that require correct timing. Therefore, In this paper, we will proposed an algorithm for punctuality guarantee of memory-free inspection equipment using DDR2 SDRAM. And we will Developed memory controller using punctuality guarantee algorithm. As the results, show that when we adopt the DDR2 SDRAM, we can get the benefits of saving 13.5 times and 5.3 times in cost and space, respectively, compared to the SRAM.

Implementation of Memory controller for Punctuality Guarantee from Memory-Free Inspection Equipment using DDR2 SDRAM (DDR2 SDRAM을 이용한 비메모리 검사장비에서 정시성을 보장하기 위한 메모리 컨트롤러 구현)

  • Jeon, Min-Ho;Shin, Hyun-Jun;Kang, Chul-Gyu;Oh, Chang-Heon
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.05a
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    • pp.136-139
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    • 2011
  • The conventional semiconductor equipment has adopted SRAM module as the test pattern memory, which has a simple design and does not require refreshing. However, SRAM has its disadvantages as it takes up more space as its capacity becomes larger, making it difficult to meet the requirements of large memories and compact size. if DRAM is adopted as the semiconductor inspection equipment, it takes up less space and costs less than SRAM. However, DRAM is also disadvantageous because it requires the memory cell refresh, which is not suitable for the semiconductor examination equipments that require correct timing. Therefore, In this paper, we will proposed an algorithm for punctuality guarantee of memory-free inspection equipment using DDR2 SDRAM. And we will produced memory controller using punctuality guarantee algorithm.

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WARP: Memory Subsystem Effective for Wrapping Bursts of a Cache

  • Jang, Wooyoung
    • ETRI Journal
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    • v.39 no.3
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    • pp.428-436
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    • 2017
  • State-of-the-art processors require increasingly complicated memory services for high performance and low power consumption. In particular, they request transfers within a burst in a wrap-around order to minimize the miss penalty of a cache. However, synchronous dynamic random access memories (SDRAMs) do not always generate transfers in the wrap-round order required by the processors. Thus, a memory subsystem rearranges the SDRAM transfers in the wrap-around order, but the rearrangement process may increase memory latency and waste the bandwidth of on-chip interconnects. In this paper, we present a memory subsystem that is effective for the wrapping bursts of a cache. The proposed memory subsystem makes SDRAMs generate transfers in an intermediate order, where the transfers are rearranged in the wrap-around order with minimal penalties. Then, the transfers are delivered with priority, depending on the program locality in space. Experimental results showed that the proposed memory subsystem minimizes the memory performance loss resulting from wrapping bursts and, thus, improves program execution time.

Proton and γ-ray Induced Radiation Effects on 1 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications

  • Park, Mi Young;Chae, Jang-Soo;Lee, Chol;Lee, Jungsu;Shin, Im Hyu;Kim, Ji Eun
    • Journal of Astronomy and Space Sciences
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    • v.33 no.3
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    • pp.229-236
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    • 2016
  • We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary metal-oxide-semiconductor (CMOS) technology). We compare our radiation tolerance data for LPDDR SDRAM with those of general DDR SDRAM. The data confirms that our devices under test (DUTs) are potential candidates for space flight applications.

Engineering Model Design and Implementation of Mass Memory Unit for STSAT-2 (과학기술위성 2호 대용량 메모리 유닛 시험모델 설계 및 구현)

  • Seo, In-Ho;Ryu, Chang-Wan;Nam, Myeong-Ryong;Bang, Hyo-Choong
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.33 no.11
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    • pp.115-120
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    • 2005
  • This paper describes the design and implementation of engineering model(EM) of Mass Memory Unit(MMU) for Science and Technology Satellite 2(STSAT-2) and the results of integration test. The use of Field-Programmable Gate Array(FPGA) instead of using private electric parts makes a miniaturization and lightweight of MMU possible. 2Gbits Synchronous Dynamic Random Access Memory(SDRAM) module for mass memory is used to store payload and satellite status data. Moreover, file system is applied to manage them easily in the ground station. RS(207,187) code improves the tolerance with respect to Single Event Upset(SEU) induced in SDRAM. The simulator is manufactured to verify receiving performance of payload data.

DEVELOPMENT OF THE READOUT CONTROLLER FOR INFRARED ARRAY (적외선검출기 READOUT CONTROLLER 개발)

  • Cho, Seoung-Hyun;Jin, Ho;Nam, Uk-Won;Cha, Sang-Mok;Lee, Sung-Ho;Yuk, In-Soo;Park, Young-Sik;Pak, Soo-Jong;Han, Won-Yong;Kim, Sung-Soo
    • Publications of The Korean Astronomical Society
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    • v.21 no.2
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    • pp.67-74
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    • 2006
  • We have developed a control electronics system for an infrared detector array of KASINICS (KASI Near Infrared Camera System), which is a new ground-based instrument of the Korea Astronomy and Space science Institute (KASI). Equipped with a $512{\times}512$ InSb array (ALADDIN III Quadrant, manufactured by Raytheon) sensitive from 1 to $5{\mu}m$, KASINICS will be used at J, H, Ks, and L-bands. The controller consists of DSP(Digital Signal Processor), Bias, Clock, and Video boards which are installed on a single VME-bus backplane. TMS320C6713DSP, FPGA(Field Programmable Gate Array), and 384-MB SDRAM(Synchronous Dynamic Random Access Memory) are included in the DSP board. DSP board manages entire electronics system, generates digital clock patterns and communicates with a PC using USB 2.0 interface. The clock patterns are downloaded from a PC and stored on the FPGA. UART is used for the communication with peripherals. Video board has 4 channel ADC which converts video signal into 16-bit digital numbers. Two video boards are installed on the controller for ALADDIN array. The Bias board provides 16 dc bias voltages and the Clock board has 15 clock channels. We have also coded a DSP firmware and a test version of control software in C-language. The controller is flexible enough to operate a wide range of IR array and CCD. Operational tests of the controller have been successfully finished using a test ROIC (Read-Out Integrated Circuit).