• IMMUNE NETWORK
• /
• v.12 no.3
• /
• pp.71-83
• /
• 2012

T cell activation and function require physical contact with antigen presenting cells at a specialized junctional structure known as the immunological synapse. Once formed, the immunological synapse leads to sustained T cell receptor-mediated signalling and stabilized adhesion. High resolution microscopy indeed had a great impact in understanding the function and dynamic structure of immunological synapse. Trends of recent research are now moving towards understanding the mechanical part of immune system, expanding our knowledge in mechanosensitivity, force generation, and biophysics of cell-cell interaction. Actin cytoskeleton plays inevitable role in adaptive immune system, allowing it to bear dynamic and precise characteristics at the same time. The regulation of mechanical engine seems very complicated and overlapping, but it enables cells to be very sensitive to external signals such as surface rigidity. In this review, we focus on actin regulators and how immune cells regulate dynamic actin rearrangement process to drive the formation of immunological synapse.

• Electrical & Electronic Materials
• /
• v.10 no.8
• /
• pp.783-793
• /
• 1997

A VLSI implementation of a self-learning neural network integrated circuits using a linearity synapse transistor is investigated. The thickness dependence of oxide current density stress current transient current and channel current has been measured in oxides with thicknesses between 41 and 112 $\AA$, which have the channel width $\times$ length 10 $\times$1${\mu}{\textrm}{m}$, 10 $\times$ 0.3${\mu}{\textrm}{m}$ respectively. The transient current will affect data retention in synapse transistors and the stress current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the drain source current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.1
• /
• pp.7-11
• /
• 1998

In this paper, a new synapse cell with nonvolatile SONOS semiconductor memory device is proposed and it's fundamental function electronically implemented SONOS NVSM has shown characteristics that the memory value, synaptic weights, can be increased or decreased incrementally. A novel SONOS synapse is used to read out the stored analog value. For the purpose of synapse implementation using SONOS NVSM, this work has investigated multiplying characteristics including weight updating characteristics and neuron output characteristics. It is concluded that SONOS synapse cell has good agreement for use as a synapse in artificial neural networks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.59-62
• /
• 2000

A VLSI implementation of a self-learning neural network integrated circuits using a linearity synapse transistor is investigated. The thickness dependence of oxide current density, stress current, transient current and channel current has been measured in oxides with thicknesses between 41 and 112 $\AA$, which have the channel width$\times$length 10$\times$1${\mu}{\textrm}{m}$ respectively. The transient current will affect data retention in synapse transistors and the stress current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor has represented the neural states and the manipulation which gave unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the drain source current.

• Applied Microscopy
• /
• v.25 no.4
• /
• pp.1-8
• /
• 1995

This study was performed to analyze the morphological changes of synapses during early postnatal periods. Neonatal rats were grouped by 3, 7, 14, 21, 28 and 42day old, and observed the ultrastructural pattern of the synapses in the neostriatum by transmission electron microscope. 1. The number of synapse, the length of postsynaptic thickening and the amount of synaptic vesicles markedly increase during postnatal development 2. The proportion of asymmetric and curved synapses gradually increase by developmental periods. From the above results, it is suggested that the size of synapse increase during post-natal period, and asymmetric synapse are formed from the symmetric type and curved synapse are formed from the plane type.

• Applied Microscopy
• /
• v.27 no.4
• /
• pp.347-355
• /
• 1997

These studies were performed to observe the morphological changes of synapses in the visual cortex of rat during early postnatal development. Specimens of the visual cortex were taken from rats (Sprague Dawley) at 1, 3, 7, 14 and 21 days of age, and prepared for silver impregnation and electron microscopy. The number of synapse and the length of postsynaptic thickening were increased progressively with age, especially 14 and 21 days. The number of dendritic spine was increased conspicuously on postnatal days 14-21. And asymmetic, curved and axo-spinous synapses were increased markedly at the same ages. The present findings suggest that spurt of synaptogenesis in the rat visual cortex occurs during early postnatal development, especially in second to 3rd week period and asymmetric and/or curved axo-spinous synapse is a matured form of synapse with advanced age.

• BMB Reports
• /
• v.48 no.7
• /
• pp.369-370
• /
• 2015

Actin dynamics is critical for the formation and sustainment of the immunological synapse (IS) during T cell interaction with antigen-presenting cells (APC). Thus, many actin regulating proteins are involved in spatial and temporal actin remodeling at the IS. However, little is known whether or how actin stabilizing protein controls IS and the consequent T cell functions. TAGLN2 − an actin-binding protein predominantly expressed in T cells − displays a novel function to stabilize cortical F-actin, thereby augmenting F-actin contents at the IS, and acquiring leukocyte function-associated antigen-1 activation following T cell activation. TAGLN2 also competes with cofilin to protect F-actin in vitro and in vivo. During cytotoxic T cell interaction with cancer cells, the expression level of TAGLN2 at the IS correlates with the T cell adhesion to target cancer cells and production of lytic granules such as granzyme B and perforin, thus expressing cytotoxic T cell function. These findings identify a novel function for TAGLN2 as an actin stabilizing protein that is essential for stable immunological synapse formation, thereby regulating T cell immunity. [BMB Reports 2015; 48(7): 369-370]

• Applied Microscopy
• /
• v.50
• /
• pp.6.1-6.6
• /
• 2020

The cerebellum is a region of the brain that plays an important role in motor control. It is classified phylogenetically into archicerebellum, paleocerebellum and neocerebellum. The Purkinje cells are lined in a row called Purkinje cell layer and it has a unique dendritic branches with many spines. The previous study reported that there is a difference of synapse density according to the lobules based on large two-dimensional data. However, recent study with high voltage electron microscopy showed there was no differences in dendritic spine density of the Purkinje cell according to its phylogenetic lobule. We analyzed Purkinje cell density in the II, VI and X lobules by stereological modules and synaptic density was estimated by double disector based on Purkinje cell density in the molecular layer of each lobule. The results showed that there was significant difference in the Purkinje cell density and synapse number according to their phylogenetic lobules. The number of Purkinje cell in a given volume was larger in the archicerebellum, but synapse density was higher in the neocerebellum. These data suggest that cellular and synaptic organization of the Purkinje cell is different according to their phylogenetic background.

• Proceedings of the IEEK Conference
• /
• 2007.07a
• /
• pp.475-476
• /
• 2007

The stress induced leakage currents will affect data retention in synapse transistors and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor made by thin silicon oxides has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhibitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhibitory state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.855-858
• /
• 2001

The stress induced leakage currents of thin silicon oxides is investigated in the VLSI implementation of a self learning neural network integrated circuits using a linearity synapse transistor. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 41 ${\AA}$, 86${\AA}$, which have the channel width ${\times}$ length 10 ${\times}$1${\mu}$m, 10 ${\times}$0.3${\mu}$m respectively. The stress induced leakage currents will affect data retention in synapse transistors and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor made by thin silicon oxides has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.