• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1631-1633
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• 2001

In manufacturing processes, various and suitable pulse shapes are required for the purpose of material processing and the pulseshape is regarded as a dominant factor due to the specific property of processing materials. Therefore, in this study, a variable pulse width, high duty cycle Pulse Forming Network(PFN) is constructed by time sequently. The power supply for this experiment consists of three switching circuits. The PFN elements operate at low voltage and drive the primary of HV leakage transformer. The secondary of the transformer has a full-wave rectifier, which passes the pulse energy to the load in a continuous sequence of properly phased and nested increments. We investigated laser pulse width as various delay time among three switching circuit. As a result, we tan obtain various laser pulse width from about 4ms to 10ms. The maximum laser pulse width obtained at this experiment was about 10ms at delay time of 4ms among each switching circuit.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1264-1270
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• 2004

A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After making symmetric thyristor dies with a voltage rating of 1,600 V from 350 $\mu$m thickness of 60 $\Omega$ㆍcm NTD-Si wafer and 200 $\mu$m width of n-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7 MeV proton beam showed a superior trade-off relationship of $V_{TM}$ = 1.55 V and $t_{q}$ = 15 $\mu$s attributed to a very narrow layer of short carrier lifetime(～1 $\mu$s) in the middle of its n-base drift region. To explain the small increase of $V_{TM}$ , we will introduce the effect of carrier compensation at the low carrier lifetime region by the diffusion current.ffusion current.t.

• 정보처리학회논문지A
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• 제8A권2호
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• pp.99-106
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• 2001

본 논문에서는 다단계 상호연결망(MIN)을 기반으로 하는 다중컴퓨터에서의 고장 허용 멀티캐스팅에 대해 연구한다. 프로세싱 노드간 일대일 라우팅뿐만 아니라, 효율적인 멀티캐스팅은 다중컴퓨터의 성능에 영향을 주는 중요한 요소이다. 본 논문은 스위칭 소자이 고장을 허용하는 멀티캐스팅 알고리즘을 제안한다. 제안된 알고리즘은 멀티캐스트 목적지들을 표현하기 위해 큐브 부호화 방식을 사용하며, 고장을 우회하기 위해 순환 기법을 기반으로 한다. 이 알고리즘은 다수의 고장 스위칭 소자가 있는 MIN에서 임의의 멀티캐스트 메시지를 두 번 순환시켜 라우팅할 수 있다. 그리고, MIN의 구조적 특성을 이용하여 본 알고리즘의 정확성을 증명한다.

• EDISON SW 활용 경진대회 논문집
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• 제6회(2017년)
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• pp.499-505
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• 2017

Photoisomerizing molecules which can transform their structure by the light irradiation have great deal for the application of photo-switching devices. And azobenzene is the representive type of the photoisomerizing molecules. It can transform their trans- structures into cis- structure as the light for certain wave lengths they receive. This property shows the potential of ON/OFF switching functionalization which can be used into the nano scale photo switch. Furthermore, many studies are interested in the organic linkers that connect the azobenzene and metal electrodes. We used S, $CH_2S$, $(CH_2)_4S$ as the linker to watch the influence of linkers for electronic properties. So We suggest a photoswitching device based on the vertical junction using the first-principles calculations with density functional theory and non-equilibrium Greens function (NEGF). By analyzing the electronic structure and tunneling current caused by the structural difference of the system between cis- and trans- azobenzene, the difference in switching mechanism, ON/OFF ratio and transmission will be watched as the linker changes. And finally We will suggest which linker would be the better for the optimal device architecture which can achieve high control of the ON/OFF photocurrent ratio. This result will show the potential of azobenzene-based photoswitch and provide the critical insight in constructing the optimal device architecture.

• Journal of Power Electronics
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• 제18권1호
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• pp.23-33
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• 2018

Silicon Carbide (SiC) MOSFET belongs to the family of wide-band gap devices with inherit property of low switching and conduction losses. The stable operation of SiC MOSFET at higher operating temperatures has invoked the interest of researchers in terms of its application to high power density (HPD) power converters. This paper presents a performance study of SiC MOSFET based two-phase interleaved boost converter (IBC) for regulation of avionics bus voltage in more electric aircraft (MEA). A 450W HPD, IBC has been developed for study, which delivers 28V output voltage when supplied by 24V battery. A gate driver design for SiC MOSFET is presented which ensures the operation of converter at 250kHz switching frequency, reduces the miller current and gate signal ringing. The peak current mode control (PCMC) has been employed for load voltage regulation. The efficiency of SiC MOSFET based IBC converter is compared against Si counterpart. Experimentally obtained efficiency results are presented to show that SiC MOSFET is the device of choice under a heavy load and high switching frequency operation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.518-519
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• 2005

We have studied the transmittance of fringe-filed switching(FFS) using a liquid crystal with positive dielectric anisotropy. Generally, FFS having positive dielectric anisotropy has less transmittance than FFS using negative dielectric anisotropy. FFS mode transmittance depends on horizontal director deformation, however fringe filed is composed of vertical and horizontal field. Vertical field in the middle of electrode suppresses the transmittance of FFS mode, especially when we use positive one. So, it is important to prevent the LC director from the effect of vertical field. We changed the splay elastic constant and checked the transmittance. The transmittance of FFS having positive dielectric anisotropy was improved. Less tilted LC directors improve the transmittance of FFS using positive dielectric anisotropy. We can improve the transmittance by using LC which have high splay elastic constant when another LC properties are equal.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.815-818
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• 1998

The Insulated Gate Bipolar Transistor has the characteristics of MOSFET and BJT. The characteristics of proposed device exhibit high speed switching, the voltage controlled property, and the low ON resistance. This hybrid device has been used and developed continuously in the power electronic engineering field. We can simulate many IGBT circuits, such as the motor drive circuit, the switching circuits etc, with PSpice. However, some problems in PSpice is that the IGBT is old-fashioned and is very difficult to get it. In this paper, the IGBT in PSpice is considered as the basic structure. We changed the valuse of base width, gate-drain overlaping area, device area, and doping concentration, then calculated MOS transconductance, ambipolar recombination lifetime etc. Using this resultant parameter, we could predict the transient response characteristicsof IGBT, for examplex, voltage overshoot, the rising curve of voltage, and the falling curve of current.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.656-659
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• 2001

We investigated the residual DC in the in-plane switching (IPS)-liquid crystal display(LCD) by voltage-transmittance (V-T) hysteresis method. Several IPS-LCD which have different concentrations of cynao LCs and different resistivities of fluorine LCs were fabricated. We found that the residual DC voltage of the IPS-LCD was decreasing with increasing concentration of cyano LCs and increasing with decreasing specific resistivity of fluorine LC materials. The residual DC voltage property can be improved by low molecular weight and high polarity of cyano LC.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2005년도 ICCAS
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• pp.1-4
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• 2005

This paper describes work on isolation of vibration related engine by a hydraulic engine mount with controllable area of inertia track. Automotive engine mounts are required to constrain motion of engine shake resulting from low-frequency road input of shock excitation and also to isolate noise and vibration generated by the engine with unbalanced disturbance at the high frequency range. The property of the mount depends on vibration amplitude and excitation frequency, which means that the excitation amplitude is large in low excitation frequency range and small in high frequency range. In this paper, theoretical works with model of the mount to reduce vibrations related engine were conducted. The volumetric stiffness of the mount is greatly changed according to the switching the area of the inertia track. Therefore, when the area of the inertia track is tuned, the transmissibility of the mount is effectively reduced.

• Journal of the Optical Society of Korea
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• 제20권1호
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• pp.156-164
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• 2016

We demonstrated the pretilt angle effect on the viewing angle properties of a single-domain fringe-field switching (FFS) liquid crystal (LC) mode. By performing the Póincare sphere analysis, we investigated, in detail, the origin of the viewing angle asymmetry that exists in the single-domain FFS LC mode both in the field-on and field-off states. Using this analysis, we confirmed that the pretilt angle reduces the viewing angle symmetry in the single-domain FFS LC mode. Finally, we examined the effect of a zero pretilt angle on the viewing angle symmetry by evaluating real single-domain FFS LC cells.