Non-volatile Molecular Memory using Nano-interfaced Organic Molecules in the Organic Field Effect Transistor
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- Proceedings of the Korean Vacuum Society Conference
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- 2010.02a
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- pp.31-32
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- 2010
In our previous reports [1-3], electron transport for the switching and memory devices using alkyl thiol-tethered Ru-terpyridine complex compounds with metal-insulator-metal crossbar structure has been presented. On the other hand, among organic memory devices, a memory based on the OFET is attractive because of its nondestructive readout and single transistor applications. Several attempts at nonvolatile organic memories involve electrets, which are chargeable dielectrics. However, these devices still do not sufficiently satisfy the criteria demanded in order to compete with other types of memory devices, and the electrets are generally limited to polymer materials. Until now, there is no report on nonvolatile organic electrets using nano-interfaced organic monomer layer as a dielectric material even though the use of organic monomer materials become important for the development of molecularly interfaced memory and logic elements. Furthermore, to increase a retention time for the nonvolatile organic memory device as well as to understand an intrinsic memory property, a molecular design of the organic materials is also getting important issue. In this presentation, we report on the OFET memory device built on a silicon wafer and based on films of pentacene and a SiO2 gate insulator that are separated by organic molecules which act as a gate dielectric. We proposed push-pull organic molecules (PPOM) containing triarylamine asan electron donating group (EDG), thiophene as a spacer, and malononitrile as an electron withdrawing group (EWG). The PPOM were designed to control charge transport by differences of the dihedral angles induced by a steric hindrance effect of side chainswithin the molecules. Therefore, we expect that these PPOM with potential energy barrier can save the charges which are transported to the nano-interface between the semiconductor and organic molecules used as the dielectrics. Finally, we also expect that the charges can be contributed to the memory capacity of the memory OFET device.[4]
Among the next generation memory, MRAM (Magnetic Random Access Memory) is worthy of notice for substituting the preexisting memory thanks to its non-volatile property and other advantages. Recently perpendicular MRAM and spin transfer torque MRAM techniques are under active investigation to realize a high density and low power consumption. As a result, there are increasing of patents applications for high density, low current density for magnetization switching and high thermal stability. In this paper, we analyze the trend of patent applications and registrations about MRAM and propose a direction of future investigation.
Using the ion-beam irradiated indium zinc oxide (IZO) films which was cured at
The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The
Korea's agricultural land is constantly being reduced. The reasons for this are due to the change of agricultural profitability and the policy conditions. The reduction of agricultural land in 2010 showed a decline trend by 14.4 % of paddy fields and 1.2% of uplands compared to areas from 2000. These reductions were mainly due to switch rice paddy fields into upland or greenhouse facility cultivation because of low profitability of rice products compared to farm products. In addition, the permit system of agricultural areas was relaxed in switching paddy fields and this accelerated the reduction of agricultural land. For this reason, more than 1% of agricultural land area has been reduced every year for last five years. Moreover, indiscreet fill and cover materials such as construction wastes were used in agricultural lands and caused land contamination which threatened foundation as sustainable agricultural lands. For these reasons, it is a desperate situation to conserve good agricultural lands. However, the standards of transported soils, filling soils and cutting soils in the Agricultural Land Act are qualitative and have a problem of causing complaints. Therefore, the following criteria (proposals) are proposed in the Agricultural Land Act; (1) Use the proper soils for crops (criterion), (2) Soil components and amounts should be proper as transported soils (range), and (3) Prohibiting usage of improper earth rocks or recycled aggregates in case of filling soils (kinds). The presented criteria (proposals) suggest following; (1) Use physio-chemically proper soils for crops (criterion), (2) In case of transported soils, i, exclude potential acid sulphate soils, ii, gravel content sould be less than 15%, and iii, Heavy metals and other contaminants should be less than the soil contamination warning limit from the Ministry of Environments, (3) In case of filling soils, 13 kinds of recycled wastes specified in the Wastes Control Act should not be used as filling soils, (4) Practice soil conservation technology in case of sloping areas, and (5) Follow proper fertilizer application standards for maturing paddy fields and uplands when cutting soils.
Most of the recent researches for ATM switches have been based on multistage interconnection network known as regularity and self-routing property. These networks can switch packets simultaneously and in parallel. However, they are blocking networks in the sense that packet is capable of collision with each other Mainly Banyan network have been used for structure. There are several ways to reduce the blocking or to increase the throughput of banyan-type switches: increasing the internal link speeds, placing buffers in each switching node, using multiple path, distributing the load evenly in front of the banyan network and so on. Therefore, this paper proposes the use of recirculating shuffle-exchange network to reduce the blocking and to improve hardware complexity. This structures are recirculating shuffle-exchange network as simplified in hardware complexity and Rank network with tree structure which send only a packet with highest priority to the next network, and recirculate the others to the previous network. after it decides priority number on the Packets transferred to the same destination, The transferred Packets into banyan network use the function of self routing through decomposition and composition algorithm and all they arrive at final destinations. To analyze throughput, waiting time and packet loss ratio according to the size of buffer, the probabilities are modeled by a binomial distribution of packet arrival. If it is 50 percentage of load, the size of buffer is more than 15. It means the acceptable packet loss ratio. Therefore, this paper simplify the hardware complexity as use of recirculating shuffle-exchange network instead of bitonic sorter.
The combination of the broadband property and the wide area coverage of satellite communications enables high speed transmission. Every user in the region under the satellite beam coverage can tranceiver and one can simultaneously communicate with multiple users. For these reasons, it is one of commendable telecommunication networks for information transfer. Since the satellite communications use open channels, it is likely to cause jamming with unwanted interference signals. In the thesis, APSK (Amplitude Phase Shift Keying) is employed, which is recommended for DVB-S2 due to high-speed transmission and excellent bandwidth efficiency. For obtaining reliable communication under the jamming environments, the communication satellite transponder rests on the polyphase filter bank structure, which enables switching among the subchannels and gain control on each subchannel, resulting in effectively eliminating jamming. Furthermore, the nulling scheme, one of the various anti-jamming approaches, is investigated, in which unwanted jamming signals are eliminated in the frequency domain after passing through the analysis part of the polyphase filter bank. The performance of the nulling scheme is evaluated for tone jamming and partial band jamming in terms of BER and EVM. The simulation results indicate that the nulling scheme improve the BER and EVM performance over the case without any anti-jamming approach.
In this paper, we present the cell resequencing buffer to solve the cell sequence integrity problem of the Cyclic banyan network that is a high-performance fault-tolerant cell switch. By offering multiple paths between input ports and output ports, using the deflection self-routing, the Cyclic banyan switch offer high reliability, and it also solves congestion problem for the internal links of the switch. By the way, these multiple paths can be different lengths for each other. Therefore, the cells departing from an identical source port and arriving at an identical destination port can reach to the output port as the order that is different from the order arriving at input port. The proposed cell resequencing buffer is a hardware sliding window mechanism. to solve such cell sequence integrity problem. To calculate the size of sliding window that cause the prime cost of the presented device, we analyzed the distribution of the cell delay through the simulation analyses under traffic load that have a nonuniform address distribution that express tile Property of traffic of the Internet. Through these analyses, we found out that we can make a cell resequencing buffer by which the cell sequence integrity is to be secured, by using a, few of ordinary memory and control logic. The cell resequencing buffer presented in this paper can be used for other multiple paths switching networks.
The wall shear stress in the vicinity of end-to end anastomoses under steady flow conditions was measured using a flush-mounted hot-film anemometer(FMHFA) probe. The experimental measurements were in good agreement with numerical results except in flow with low Reynolds numbers. The wall shear stress increased proximal to the anastomosis in flow from the Penrose tubing (simulating an artery) to the PTFE: graft. In flow from the PTFE graft to the Penrose tubing, low wall shear stress was observed distal to the anastomosis. Abnormal distributions of wall shear stress in the vicinity of the anastomosis, resulting from the compliance mismatch between the graft and the host artery, might be an important factor of ANFH formation and the graft failure. The present study suggests a correlation between regions of the low wall shear stress and the development of anastomotic neointimal fibrous hyperplasia(ANPH) in end-to-end anastomoses. 30523 T00401030523 ^x Air pressure decay(APD) rate and ultrafiltration rate(UFR) tests were performed on new and saline rinsed dialyzers as well as those roused in patients several times. C-DAK 4000 (Cordis Dow) and CF IS-11 (Baxter Travenol) reused dialyzers obtained from the dialysis clinic were used in the present study. The new dialyzers exhibited a relatively flat APD, whereas saline rinsed and reused dialyzers showed considerable amount of decay. C-DAH dialyzers had a larger APD(11.70
The wall shear stress in the vicinity of end-to end anastomoses under steady flow conditions was measured using a flush-mounted hot-film anemometer(FMHFA) probe. The experimental measurements were in good agreement with numerical results except in flow with low Reynolds numbers. The wall shear stress increased proximal to the anastomosis in flow from the Penrose tubing (simulating an artery) to the PTFE: graft. In flow from the PTFE graft to the Penrose tubing, low wall shear stress was observed distal to the anastomosis. Abnormal distributions of wall shear stress in the vicinity of the anastomosis, resulting from the compliance mismatch between the graft and the host artery, might be an important factor of ANFH formation and the graft failure. The present study suggests a correlation between regions of the low wall shear stress and the development of anastomotic neointimal fibrous hyperplasia(ANPH) in end-to-end anastomoses. 30523 T00401030523 ^x Air pressure decay(APD) rate and ultrafiltration rate(UFR) tests were performed on new and saline rinsed dialyzers as well as those roused in patients several times. C-DAK 4000 (Cordis Dow) and CF IS-11 (Baxter Travenol) reused dialyzers obtained from the dialysis clinic were used in the present study. The new dialyzers exhibited a relatively flat APD, whereas saline rinsed and reused dialyzers showed considerable amount of decay. C-DAH dialyzers had a larger APD(11.70