• 제목/요약/키워드: switching property

검색결과 180건 처리시간 0.028초

다중프로세서 시스템에서 편향된 다단계 상호연결망 (Biased Multistage Inter connection Network in Multiprocessor System)

  • 최창훈
    • 한국산학기술학회논문지
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    • 제12권4호
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    • pp.1889-1896
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    • 2011
  • 다단계 상호 연결망(MIN)에 중복 경로를 제공하여 오류를 허용하는 기술을 개발하기 위하여 많은 연구가 진행되어 왔다. 지금까지 MIN에서 중복 경로는 추가된 stage와 중복된 데이터 경로 같은 추가 적인 하드웨어를 첨가함으로써 실현되었다. 본 논문은 계층적 MIN이라는 새로운 위상의 MIN을 제안한다. 제안된 MIN은 기존의 MIN보다 적은 2.5N-4개의 스위칭소자를 사용하여 구성되었다. 비록 기존의 MIN 보다 적은 하드웨어를 사용할지라도 완전 접근 성질을 가지고 있으며, 또한 오류 허용을 위한 선택적 중복 경로를 제공한다. 더욱이 HMIN에서는 지역화된 통신을 위한 지름길이 제공되어 다중 프로세서 시스템에서 지역 참조성을 활용하는 장점을 갖게 된다. 지역참조성의 정도를 변화시키며 제안된 시스템의 성능을 분석하였으며 모의실험을 수행하였다.

회전좌표계를 이용한 단상능동전력필터의 제어이론 (A Control Algorithm of Single Phase Active Power Filter based on Rotating Reference Frame)

  • 김진선;김영석;신재화
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 제36회 하계학술대회 논문집 B
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    • pp.1480-1482
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    • 2005
  • The major causes of power quality deterioration are harmonic current through semiconductor switching device, due to use of nonlinear loads such as diodes rectifier or thyristor rectifiers. In response to this concerns, this paper presents a new control method of single-phase active power filter(APF) for the compensation of harmonic current components in nonlinear loads. In order to make the complex calculation to be possible, the single-phase system that has two phases was made by constructing a imaginary second-phase giving time delay to load currents. In the conventional method, a imaginary-phase lagged to the load current T/4(here T is the fundamental cycle) was made. But in this proposed method, the new signal, which has the delayed phase through the filter, using the phase-delay property of low-pass filter, was used as the second phase. As this control method is applied to the system of single phase, an instantaneous calculation was done rather by using the rotating reference frames that synchronizes with source-frequency than by applying instantaneous reactive power theory that uses the conventional fixed reference frames.

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Dual-function Dynamically Tunable Metamaterial Absorber and Its Sensing Application in the Terahertz Region

  • Li, You;Wang, Xuan;Zhang, Ying
    • Current Optics and Photonics
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    • 제6권3호
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    • pp.252-259
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    • 2022
  • In this paper, a dual-function dynamically tunable metamaterial absorber is proposed. At frequency points of 1.545 THz and 3.21 THz, two resonance peaks with absorption amplitude of 93.8% (peak I) and 99.4% (peak II) can be achieved. By regulating the conductivity of photosensitive silicon with a pump laser, the resonance frequency of peak I switches to 1.525 THz, and that of peak II switches to 2.79 THz. By adjusting the incident polarization angle by rotating the device, absorption amplitude tuning is obtained. By introducing two degrees of regulation freedom, the absorption amplitude modulation and resonant frequency switching are simultaneously realized. More importantly, dynamic and continuous adjustment of the absorption amplitude is obtained at a fixed resonant frequency, and the modulation depth reaches 100% for both peaks. In addition, the sensing property of the proposed MMA was studied while it was used as a refractive index sensor. Compared with other results reported, our device not only has a dual-function tunable characteristic and the highest modulation depth, but also simultaneously possesses fine sensing performance.

Dynamics of Technology Adoption in Markets Exhibiting Network Effects

  • Hur, Won-Chang
    • Asia pacific journal of information systems
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    • 제20권1호
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    • pp.127-140
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    • 2010
  • The benefit that a consumer derives from the use of a good often depends on the number of other consumers purchasing the same goods or other compatible items. This property, which is known as network externality, is significant in many IT related industries. Over the past few decades, network externalities have been recognized in the context of physical networks such as the telephone and railroad industries. Today, as many products are provided as a form of system that consists of compatible components, the appreciation of network externality is becoming increasingly important. Network externalities have been extensively studied among economists who have been seeking to explain new phenomena resulting from rapid advancements in ICT (Information and Communication Technology). As a result of these efforts, a new body of theories for 'New Economy' has been proposed. The theoretical bottom-line argument of such theories is that technologies subject to network effects exhibit multiple equilibriums and will finally lock into a monopoly with one standard cornering the entire market. They emphasize that such "tippiness" is a typical characteristic in such networked markets, describing that multiple incompatible technologies rarely coexist and that the switch to a single, leading standard occurs suddenly. Moreover, it is argued that this standardization process is path dependent, and the ultimate outcome is unpredictable. With incomplete information about other actors' preferences, there can be excess inertia, as consumers only moderately favor the change, and hence are themselves insufficiently motivated to start the bandwagon rolling, but would get on it once it did start to roll. This startup problem can prevent the adoption of any standard at all, even if it is preferred by everyone. Conversely, excess momentum is another possible outcome, for example, if a sponsoring firm uses low prices during early periods of diffusion. The aim of this paper is to analyze the dynamics of the adoption process in markets exhibiting network effects by focusing on two factors; switching and agent heterogeneity. Switching is an important factor that should be considered in analyzing the adoption process. An agent's switching invokes switching by other adopters, which brings about a positive feedback process that can significantly complicate the adoption process. Agent heterogeneity also plays a important role in shaping the early development of the adoption process, which has a significant impact on the later development of the process. The effects of these two factors are analyzed by developing an agent-based simulation model. ABM is a computer-based simulation methodology that can offer many advantages over traditional analytical approaches. The model is designed such that agents have diverse preferences regarding technology and are allowed to switch their previous choice. The simulation results showed that the adoption processes in a market exhibiting networks effects are significantly affected by the distribution of agents and the occurrence of switching. In particular, it is found that both weak heterogeneity and strong network effects cause agents to start to switch early and this plays a role of expediting the emergence of 'lock-in.' When network effects are strong, agents are easily affected by changes in early market shares. This causes agents to switch earlier and in turn speeds up the market's tipping. The same effect is found in the case of highly homogeneous agents. When agents are highly homogeneous, the market starts to tip toward one technology rapidly, and its choice is not always consistent with the populations' initial inclination. Increased volatility and faster lock-in increase the possibility that the market will reach an unexpected outcome. The primary contribution of this study is the elucidation of the role of parameters characterizing the market in the development of the lock-in process, and identification of conditions where such unexpected outcomes happen.

병렬 구조의 직접 디지털 주파수 합성기의 설계 (A practial design of direct digital frequency synthesizer with multi-ROM configuration)

  • 이종선;김대용;유영갑
    • 한국통신학회논문지
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    • 제21권12호
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    • pp.3235-3245
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    • 1996
  • 이산스펙트럽(Spread Spectrum) 통신 시스템에 사용되는 DDFS(Direct Digital Frequency Synthesizer)는 짧은 천이시간과 광대역의 특성을 요구하고, 전력소모도 적어야 한다. 이를 위해서 본 연구의 DDFS는 파이프라인 구조의 위상 가산기와 4개의 sine ROM을 병렬로 구성하여, 단일 sine ROM으로 구성된 DDFS에 비해 처리 속도를 4배 개선하였다. 위상 가산기의 위상 잘림으로 나빠지는 스펙트럼 특성은 위상 가산기 구조와 같은 잡음 정형기를 사용하여 보상하였고, 잡음 정형기의 출력 중 상위 8-bit만을 sine ROM의 어드레스로 사용하였다. 각각의 sine ROM은 사인 파형의 대칭성을 이용하여, 0 ~ $\pi$/2 사인 파형의 위상, 진폭 정보를 저장함으로 0 ~ 2$\pi$ 사인 파형의 정보를 갖는 sine ROM에 비해 크기를 크게 줄였고, 어드레스의 상위 2-bit를 제어 비트로 사용하여 2$\pi$의 사인 파형을 조합했다. 입력 클럭을 1/2, 1/4로 분주하여, 1/4 주기의 낮은 클럭 주파수로 대부분의 시스템을 구동하여, 소비 전력을 감소시켰다. DDFS 칩은 $0.8{\mu}$ CMOS 표준 공정의 게이트 어레이 기술을 이용ㅇ하여 구현하였다. 측정 결과 107MHz의 구동 클럭에서 안정하게 동작하였고, 26.7MHz의 최대 출력 주파수를 발생시켰다. 스펙트럼 순수도(Spectral purity)는 -65dBc이며, tuning latency는 55 클럭이다. DDFS칩의 소비 전력은 40MHz의 클럭 입력과 5V 단일 전원을 사용하였을 때 276.5mW이다.

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CoFe/Cu/NiFe Pseudo스핀밸브의 자기저항 특성 (The Giant Magnetoresistance Properties of CoFe/Cu/NiFe Pseudo Spin Valve)

  • 최원준;홍진표;김태송;김광윤
    • 한국자기학회지
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    • 제12권6호
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    • pp.212-217
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    • 2002
  • 비자성층을 사이에 둔 두 강자성층의 보자력 차이를 이용하여 거대자기저항특성을 나타내는 Ta/CoFe/Cu/NiFe/Ta 구조의 pseudo 스핀밸브를 DC 마그네트론 스퍼터링 방법으로 제조하였다. Ta/CoFe/Cu/NiFe/Ta 구조에서 CoFe층의 두께 변화에 따른 자화 특성 및 자기저항 특성을 조사하였으며, 이 구조에서 CoFe층의 두께가 60 $\AA$일 때 자기저항비는 3.82%이고 CoFe층과 NiFe층 사이의 보자력 차이는 27.4 Oe이다. Ta/CoFe/Cu/NiFe/Ta 구조를 갖는 pseudo 스핀밸브에서 CoFe층과 NiFe층의 보자력 차이는 CoFe층의 두께가 20 $\AA$에서 40 $\AA$까지 증가함에 따라 증가하였으며 40 $\AA$ 이상에서는 감소하였다. 이와 같은 결과는 박막의 결정성 및 포화 자기변형(λ$_{s}$)의 변화에 의한 것으로 판단된다. Cu층과 NiFe층 사이에 CoFe층을 삽입한 Ta/CoFe/Cu/NiFe/Ta 구조에서 삽입층인 CoFe층의 두께 변화에 따른 자화특성 및 자기저항 특성을 조사한 결과 CoFe두께가 10$\AA$시 자기저항비가 6.7 %이며. 삼층막 구조 보다 자기저항비가 약 1.5배 이상 증가함을 알 수 있었다.

이중구조 거대자기저항-스핀밸브 박막의 자기등방성 영역분포에 관한 연구 (Regional Distribution of Isotropy Magnetic Property of Dual-type Giant Magnetoresistance-Spin Valve Multilayer)

  • 카지드마;이상석
    • 한국자기학회지
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    • 제23권6호
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    • pp.193-199
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    • 2013
  • NiFe/Cu/NiFe/IrMn/NiFe/Cu/NiFe 이중구조 GMR-SV 박막의 열처리 조건에 의존하는 자기등방성 영역분포 특성을 조사하였다. 진공 챔버내에서 이중구조 GMR-SV 박막을 후열처리 온도를 조절하여 면상에서 강자성체 층의 자화용이축 회전을 유도하였다. 자유층과 고정층의 자화용이축 방향에 의존하는 이중구조 GMR-SV 박막의 자기저항곡선은 외부자기장의 각도를 $0^{\circ}$에서 $360^{\circ}$까지 변화시킨 후 외부자기장의 세기에 따라서 측정하였다. 후열처리 온도가 $107^{\circ}C$일 때, 외부자기장의 방향이 $0^{\circ}$에서 $90^{\circ}$까지 영역에서 자장감응도가 약 1.52 %/Oe인 자기등방성 특성을 보였다. 이러한 특성은 고정층과 자유층을 형성하는 강자성층들이 면상에서 서로 직교한 결과임을 나타내며, 자기등방성 GMR-SV 박막 소자는 임의 방향으로 자화된 마이크로 자성비드를 검출할 수 있는 고감도 바이오센서로 사용할 가능성을 제시하였다.

D-$\Pi$-A designed dye chromophores and nanoparticles: optical properties, chemosensor effects and PE/Aramid fiber colorations

  • Son, Young-A;Kim, Su-Ho;Kim, Young-Sung
    • 한국염색가공학회:학술대회논문집
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    • 한국염색가공학회 2010년도 제3회 국제학회
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    • pp.40-40
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    • 2010
  • Studies on attractive color changing property of dye chromophore and fluorophore have been greatly enjoyed in the related industrial and research fields such as optoelectronics, chemosensor, biosensor and so on. The optical property based on D-$\Pi$-A intramolecular charge transfer (ICT) system of chromophore molecules can be utilized as suitable sensing probes for checking media polarity and determining colorimetric chemosensing effect, especially heavy metal detection. These finding are obtained by absorption and emission properties. In this work, donor-acceptor D-$\Pi$-A type fluorescent dyes were designed and synthesized with the corresponding donor and acceptor groups. The selected donor moieties might be provided prominent amorphous properties which are very useful in designing and synthesizing functional polymers and in fabricating devices. Another reasons to choose are commercial availabilities in high purity and low price. Donor-bridge-acceptor (D-A) type dyes can produce impressive optical-physical properties, yielding them potentially suitable for applications in the synthesis of small functional organic molecules. Small organic functional molecules have unique advantages, such as better solubility, amorphous character, and represent an area of research which needs to be explored and developed. Currently, their applications in metalorganic compounds is rapidly expanding and becoming widespread in self-assembly processes, photoluminescence applications, chiral organocatalysts, and ingrafts with nanomaterials. Colloidal nanoparticles have received great attentions in recent years. The photophysical properties of nanoparticles, particularly in terms of brightness, photostability, emission color purity and broad adsorption range, are very attractive functions in many applications. To our knowledge background, colloidal nanoparticles have been enjoyed their applications in bio-probe research fields. This research interest can be raised by the advantages of the materials such as high photoluminescence quantum yields, sharp emission band, long-term photostability and broad excitation spectra. In recent, the uses of nanoparticles being embedded in a polymer matrix and binded on polymer surface have been explored and their properties such as photo-activation and strong photoluminescence have been proposed. The prepared chromophores and nanoparticles were investigated with absorption and emission properties, solvatochromic behaviors, pH induced color switching effects, chemosensing effects and HOMO/LUMO energy potentials with computer simulation. In addition, synthesized fluorophore dyes and particles were applied onto PE/Aramid fiber fluorescing colorations. And the related details were then discussed.

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Single Device를 사용한 조도센서용 eFuse OTP IP 설계 (Design of eFuse OTP IP for Illumination Sensors Using Single Devices)

  • 에치크 수아드;김홍주;김도훈;권순우;하판봉;김영희
    • 전기전자학회논문지
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    • 제26권3호
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    • pp.422-429
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    • 2022
  • 조도센서 칩은 아날로그 회로의 트리밍이나 디지털 레지스터의 초기 값을 셋팅하기 위해 소용량의 eFuse(electrical Fuse) OTP(One-Time Programmable) 메모리 IP(Intellectual Property)를 필요로 한다. 본 논문에서는 1.8V LV(Low-Voltage) 로직 소자를 사용하지 않고 3.3V MV(Medium Voltage) 소자만 사용하여 128비트 eFuse OTP IP를 설계하였다. 3.3V 단일 MOS 소자로 설계한 eFuse OTP IP는 1.8V LV 소자의 gate oxide 마스크, NMOS와 PMOS의 LDD implant 마스크에 해당되는 총 3개의 마스크에 해당되는 공정비용을 줄일 수 있다. 그리고 1.8V voltage regulator 회로가 필요하지 않으므로 조도센서 칩 사이즈를 줄일 수 있다. 또한 조도센서 칩의 패키지 핀 수를 줄이기 위해 프로그램 전압인 VPGM 전압을 웨이퍼 테스트 동안 VPGM 패드를 통해 인가하고 패키징 이후는 PMOS 파워 스위칭 회로를 통해 VDD 전압을 인가하므로 패키지 핀 수를 줄일 수 있다.

Schottky Barrier Tunnel Field-Effect Transistor using Spacer Technique

  • Kim, Hyun Woo;Kim, Jong Pil;Kim, Sang Wan;Sun, Min-Chul;Kim, Garam;Kim, Jang Hyun;Park, Euyhwan;Kim, Hyungjin;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권5호
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    • pp.572-578
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    • 2014
  • In order to overcome small current drivability of a tunneling field-effect transistor (TFET), a TFET using Schottky barrier (SBTFET) is proposed. The proposed device has a metal source region unlike the conventional TFET. In addition, dopant segregation technology between the source and channel region is applied to reduce tunneling resistance. For TFET fabrication, spacer technique is adopted to enable self-aligned process because the SBTFET consists of source and drain with different types. Also the control device which has a doped source region is made to compare the electrical characteristics with those of the SBTFET. From the measured results, the SBTFET shows better on/off switching property than the control device. The observed drive current is larger than those of the previously reported TFET. Also, short-channel effects (SCEs) are investigated through the comparison of electrical characteristics between the long- and short-channel SBTFET.