• Proceedings of the KSME Conference
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• 2000.04a
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• pp.843-848
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• 2000

In general, inchworm actuators are composed of two clamping piezoelectric elements and one expansion piezoelectric element. In this paper, two electromagnetic clampers are used for higher speed and high load. Dynamic equation is derived to simulate the behavior of the inchworm actuator with electromagnets. Electromagnetic clamper is used to improve the performance of the inchworm actuator. The electromagnetic clamper is composed of two permanent magnets and one traditional electromagnet. The permanent magnets play the role of the source of magnetic field to make clamping force higher, and the electromagnet is to change the mode between clamping and free. The driving voltage profile is also analyzed to improve the speed of inchworm actuator. The real system was manufactured and experimented to find dynamic characteristics and the maximum speed is obtained. Dynamic model is verified by comparing with experimental results.

• Journal of Advanced Marine Engineering and Technology
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• v.23 no.2
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• pp.159-167
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• 1999

This paper presents a new transient voltage blocking device(TOBD)which low power and high frequency bandwidth to protect info-communication facilities from transient voltages. Conventional protection devices have some problems such as low frequency bandwidth low ener-gy capacity and high remnant voltage. in order to improve these limitations a hybrid type TOBD which consists of a gas tube avalanche diodes and junction type field effect transistor (JFETs) is developed. The TOBD differs from the conventional protection devices in configuration and JFETs are used as an active non-linear element and a high speed switching diode with low capacitance limited high current. Therefore the avalanche diode with low energy capacity are protected from the high current and the TOBD has a very small input capacitance. From the performance test using combination surge generator which can produce $1.2/50{\mu}m$ 4.2 kV/max, $8/20{\mu}m$ 2.1 kAmax it is confirmed that the proposed TOBD has an excellent protection per-formance in tight clamping voltage and limiting current characteristics.

• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.49-50
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• 2015

Piezoelectric elements are one of good candidates able to replace motors in various electronics devices. It is slim and compact and low power consumption compare to motors. Linear regulator or class-D amplifier are generally used for piezoelectric element driver, however, suffers from severe power consumption. In this paper, electrical modeling of piezoelectric element will be presented and switching losses on the driver due to the parasitic capacitance will be analyzed. And new ZVS full bridge converter with an inductor will be proposed so as to reduce the power losses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.140-143
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• 2000

The primary function of ZnO lightning arrester is to protect transmission and distribution equipment from overvoltages and to absorb electrical energy resulting from lightning or switching surges and form temporary overvoltage. However, ZnO lightning arrester are known to exhibit an increases in resistive current with time, the rate of increase being exacerbated with increasing applied voltage and ambient temperature. So, it is important to the leakage current measurement of ZnO lightning arrester. In addition, since the resistive leakage current caused by deterioration of ZnO lightning arrester mainly caused an increase of the third harmonic component, thereby it is possible the arrester degradation diagnosis by measuring the third harmonic component in the total leakage current. The leakage current and third harmonic component are measured and used to investigate the degradation diagnosis of ZnO element of arrester. Also the SEM photography is used to investigate the change of crystal structure of ZnO element with degradation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.147-148
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• 2005

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability and efficient heat-sink design. In this paper, thermal distribution of the Insulated Gate Bipolar Transistor Module has been studied with different conditions and heat sink materials. For analysis of thermal distribution, we obtained results by using finite element simulator, Ansys.

• Convergence Security Journal
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• v.13 no.4
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• pp.19-25
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• 2013

The increasing demand for fast, flexible and guaranteed Quality of Service (QoS) in core networks has caused to deploy MultiProtocol Label Switching (MPLS) and Generalized MPLS (GMPLS) control plane. In GMPLS control plane, path computation and cooperation processes are one of the crucial element to maintain an acceptable level of service. The Internet Engineering Task Force (IETF) has proposed the Path Computation Element (PCE) architecture. The PCE is a dedicated network element devoted to path computation process and communications between Path Computation Clients (PCC) and PCEs is realized through the PCE Protocol (PCEP). This paper examines the PCE-based path computation architecture to include the design and implementation of PCEP. The functional modules including Finite State Machine (FSM) and related key design issues of each state are presented. In particular we also discuss internal/external protocol interfaces that efficiently control the communication channels.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.4
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• pp.386-392
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• 2002

This paper presents a basic characteristics of 4-element circular array dipole antennas for 4-sector beam steering. The coupled integral equations for the unknown current distributions on dipole elements are derived and solved by applying Galerkin's method of moments. The parasitic elements have been used to increase the directional gain and the beam is steered electronically either by sswitching between the parasitic elements or switching the position of the active element. The parasitic elements are switched short-circuited or open-circuited as required to steer a directional beam. In order to verify the theoretical analysis, the radiation pattern was compared with experiments.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.3
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• pp.126-132
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• 2002

The origin of image-sticking in metal-insulator-metal type thin-film diode liquid crystal displays(TFD-LCDs) is the asymmetric current-voltage(I-V) characteristic of TFD element. We developed that TFD-LCDs have reduced-image-sticking. Tantalum pentoxide(Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal(MIM) capacitors in switching devices for active-matrix liquid crystal displays(AM-LCDs). High quality Ta$_2$O$\sub$5/ thin films have been obtained from anodizing method. We fabricated a TFD element using Ta$_2$O$\sub$5/ films which had perfect current-voltage symmetry characteristics. We applied novel process technologies which were postannealed whole TFD element instead of conventional annealing to the fabrication. One-Time Post-Annealing(OPTA) heat treatment process was introduced to reduce the asymmetry and shift of the I-V characteristics, respectively. OPTA means that the whole layers of lower metal, insulator, and upper metal are annealed at one time. Futhermore, in this paper, we discussed the effects of top-electrode metals and annealing conditions.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.12
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• pp.1071-1079
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• 2002

This paper reports a methodology and application lot calculating distribution of the director in a liquid crystal cell by a numerical technique. To calculate distribution of the director, we applied a three dimensional finite element method (FEM) and calculated the distributions of electric potential and director in the liquid crystal cell. We have considered the free-energy density in the bulk of liquid crystal cell and calculated the switching property by the Ericksen-Leslie equation and the Laplace equation. We have calculated the optical transmission with distribution of the director by Berreman's method and confirmed the threshold voltage and the response time.

• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.227-232
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• 2004

We investigated a nonvolatile nanomemory element based on boron nitride nanopeapods using molecular dynamics simulations. The studied system was composed of two boron-nitride nanotubes filled Cu electrodes and fully ionized endo-fullerenes. The two boron-nitride nanotubes were placed face to face and the endo-fullerenes came and went between the two boron-nitride nanotubes under alternatively applied force fields. Since the endo-fullerenes encapsulated in the boron-nitride nanotubes hardly escape from the boron-nitride nanotubes, the studied system can be considered to be a nonvolatile memory device. The minimum potential energies of the memory element were found near the fullerenes attached copper electrodes and the activation energy barrier was $3{\cdot}579 eV$. Several switching processes were investigated for external force fields using molecular dynamics simulations. The bit flips were achieved from the external force field of above $3.579 eV/{\AA}$.