• Title/Summary/Keyword: switching characteristic

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The study on the WiBro digital optic repeater design (휴대인터넷 디지털 광 중계기 설계에 대한 연구)

  • Ahn Jun-Bae;Ryoo Kyoo-Tae
    • 한국정보통신설비학회:학술대회논문집
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    • 2006.08a
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    • pp.35-38
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    • 2006
  • Using the repeaters is indispensable to WiBro services. Repeater types are distinguished by usage, output power and required performance. In the paper, we have studied on the WiBro digital optic repeater design which has excellent performance characteristic than any other repeaters. WiBro has specific characteristic on modulation method TDD(Time Division Duplex)/OFDMA(Orthogonal Frequency Division Multiple Access) so that it demands specified H/W to design WiBro repeater. Switching technique has been introduced because of TDD characteristic in each amplifier on the repeater. Time Advance technique has been considered because of OFDM characteristic among RAS(Radio Access Station) and repeater. In this paper, we have studied on these techniques to increase repeater cell coverage and distance between RAS and repeater.

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A Study on the Characteristic analyses of High Performance Buck-Boost Converter added Electric Isolation (고성능 절연형 벅-부스트 컨버터의 특성 해석에 관한 연구)

  • Kwak, Dong-Kurl;Jung, Do-Young;Lee, Bong-Seob;Kim, Choon-Sam;Shim, Jae-Sun;Yang, Ki-Chul
    • Proceedings of the KIEE Conference
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    • 2008.10c
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    • pp.142-144
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    • 2008
  • This paper is studied on the characteristic analyses of a high performance buck-boost converter added electric isolation by using a soft switching method. To be achieved of a high performance system, the proposed buck-boost converter is constructed by using a partial resonant circuit. The control switches using in the converter are operated with soft switching for a Partial resonant method. The controlling switches are operated without increasing their voltage and current stresses by the soft switching technology. The result is that the switching loss is very low and the converter efficiency is high. And the proposed converter is added in a electric isolation. When the power conversion system is required to electric isolation, the proposed converter is adopted with the system development of high efficiency. The soft switching operation and system efficiency of the proposed converter is verified by digital simulation and experimental results.

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Effect of Channel Variation on Switching Characteristics of LDMOSFET

  • Lee, Chan-Soo;Cui, Zhi-Yuan;Kim, Kyoung-Won
    • Journal of Semiconductor Engineering
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    • v.3 no.2
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    • pp.161-167
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    • 2022
  • Electrical characteristics of LDMOS power device with LDD(Lightly Doped Drain) structure is studied with variation of the region of channel and LDD. The channel in LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of CMOS inverter. Two-dimensional TCAD MEDICI simulation is used to study hot-carrier effect, on-resistance Ron, breakdown voltage, and transient switching characteristic. The voltage-transfer characteristics and on-off switching properties are studied as a function of the channel length and doping levels. The digital logic levels of the output and input voltages are analyzed from the transfer curves and circuit operation. Study indicates that drain current significantly depends on the channel length rather than the LDD region, while the switching transient time is almost independent of the channel length. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.

Power Loss Analysis of Interleaved Soft Switching Boost Converter for Single-Phase PV-PCS

  • Kim, Jae-Hyung;Jung, Yong-Chae;Lee, Su-Won;Lee, Tae-Won;Won, Chung-Yuen
    • Journal of Power Electronics
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    • v.10 no.4
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    • pp.335-341
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    • 2010
  • In this paper, an interleaved soft switching boost converter for a Photovoltaic Power Conditioning System (PV-PCS) with high efficiency is proposed. In order to raise the efficiency of the proposed converter, a 2-phase interleaved boost converter integrated with soft switching cells is used. All of the switching devices in the proposed converter achieve zero current switching (ZCS) or zero voltage switching (ZVS). Thus, the proposed circuit has a high efficiency characteristic due to low switching losses. To analyze the power losses of the proposed converter, two experimental sets have been built. One consists of normal devices (MOSFETs, Fast Recovery (FR) diodes) and the other consists of advanced power devices (CoolMOSs, SiC-Schottky Barrier Diodes (SBDs)). To verify the validity of the proposed topology, theoretical analysis and experimental results are presented.

A Study on Switching Characteristics of Active Clamp Type Flyback Converter with Synchronous Rectifier Driving Signals Controlling Auxiliary Switch (보조스위치가 동기정류기 구동 신호로 제어되는 능동 클램프형 플라이백 컨버터의 스위칭 특성에 관한 연구)

  • Ahn, Tae Young
    • Journal of the Semiconductor & Display Technology
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    • v.17 no.3
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    • pp.21-26
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    • 2018
  • In this paper, the switching characteristics of the active clamp type flyback converter, which is deemed suitable for the miniaturization of the external power supply for home appliance, were analyzed and the process of reducing the switching loss was explained. The active clamp type flyback converter operating in the DCM has confirmed that the surge voltage of the main switch does not occur and the turn-off / on loss of the switch do not occur in principle. Also, in the case of the switch for synchronous rectifier, it was showed that the switch current showed half-wave rectified sinusoidal characteristic, and the switching loss was reduced. The switching characteristics of the experimental results gathered from 120 W class prototype were compared with the theoretical waveform in the steady-state and it was confirmed that the power conversion efficiency of the active clamp type flyback converter was maintained high due to the reduction of the switching loss.

Resistive Switching Characteristic of ZnO Memtransistor Device by a Proton Doping Effect (수소 도핑효과에 의한 ZnO 맴트랜지스터 소자특성)

  • Son, Ki-Hoon;Kang, Kyung-Mun;Park, Hyung-Ho;Lee, Hong-Sub
    • Journal of the Microelectronics and Packaging Society
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    • v.27 no.1
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    • pp.31-35
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    • 2020
  • This study demonstrates metal-oxide based memtransistor device and the gate tunable memristive characteristic using atomic layer deposition (ALD) and ZnO n-type oxide semiconductor. We fabricated a memtransistor device having channel width 70 ㎛, channel length 5 ㎛, back gate, using 40 nm thick ZnO thin film, and measured gate-tunable memristive characteristics at each gate voltage (50V, 30V, 10V, 0V, -10V, -30V, -50V) under humidity of 40%, 50%, 60%, and 70% respectively, in order to investigate the relation between a memristive characteristic and hydrogen doping effect on the ZnO memtransistor device. The electron mobility and gate controllability of memtransistor device decreased with an increase of humidity due to increased electron carrier concentration by hydrogen doping effect. The gate-tunable memristive characteristic was observed under humidity of 60% 70%. Resistive switching ratio increased with an increase of humidity while it loses gate controllability. Consequently, we could obtain both gate controllability and the large resistive switching ratio under humidity of 60%.

Characteristic Analysis of LCC Type High Frequency Resonant Inverter using ZVS (ZVS-LCC형 고주파 공진 인버터의 특성해석)

  • 서철식;김동희;노채균;남승식;변영복;이봉섭
    • The Transactions of the Korean Institute of Power Electronics
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    • v.4 no.4
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    • pp.311-317
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    • 1999
  • In this paper, the resonant inverter of SEPP-LCC type is proposed and described the operating principle. As adding t two capacitors in the switching devices in parallel. the proposed inverter can reduce switching losses. noise and voltage s stress at Turn-on and Turn-off. The analysis of the proposed circuit are described by using the normalized parameters. The data of design are got by the characteristic values and an example of the design's method is proposed. In addition. t the justification of theoretical analysis is verified by comparing to the experimental waveforms.

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The physical properties and switching characteristics of amorphous As-Ge-Te thin film (비정질 As-Ge-Te 박막의 물리적 성질 및 스위칭 특성)

  • 이현용;천석표;이영종;정홍배
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.44 no.7
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    • pp.901-907
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    • 1995
  • The switching characteristics of As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film were investigated under d.c. bias. And the frequency dependence of the conductivity was analysed with regard to the temperature dependence, in order to find the physical properties of the As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film ; a characteristic relaxation time (.tau.$_{0}$ ), the spatial density of defect states (N), and the localized wavefunction (.alpha.$^{-1}$ ). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively. The threshold voltage is increased as the thickness and the electrode distance is increased, while the threshold voltage is decreased in proportion to the increased annealing time and temperature.

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Study on Viewing angle controllable Liquid Crystal Display with High Aperture Ratio (시야각 조절이 가능한 고개구율 액정 디스플레이 연구)

  • Shin, Suck-Jae;Her, Jung-Hwa;Lim, Young-Jin;Lee, Seung-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.173-173
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    • 2010
  • We proposed viewing angle switchable liquid crystal display(LCD) associated with fringe-field switching (FFS) mode with high aperture ratio characteristic. In the device, single pixel is separated into two regions, named as main pixel for displaying images and sub pixel for viewing angle control. In sub pixel region, add the common electrode on the top substrate and the initial alignment of liquid crystal is Hybrid Alignment Nematic (HAN) state. In conclusion, we suggested that the device has high aperture ratio characteristic because the LC directors are rotated in which viewing angle control region are generated fringe electric field.

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A Novel Fault Detection Method using the PWM Characteristic at Open-Circuit Fault in NPC Inverter Systems (NPC 인버터 시스템에서 개방성 고장시 PWM 특성을 이용한 새로운 고장 검출 방법)

  • Lee, Jung-Dae;Kim, Tae-Jin;Ha, Dong-Hyun;Hyun, Dong-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.7
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    • pp.1200-1207
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    • 2008
  • In this paper, a novel fault detection method is proposed when the neutral-point-clamped inverter has a open-circuit fault in the switching device. This proposed method is configured with simple circuit and is achieved by a simple algorithm using the inherent characteristic of the continuous Pulse Width Modulation. Also, this method has the fast fault detection ability and is much simpler to embody, in comparison with conventional fault detection methods. This ability to detect fault minimizes harmful effect which are such as DC-link voltage unbalance and overstress to other switching devices. Therefore, this proposed fault detection method can improve reliability of NPC inverter system. Experimental results are presented to verify the validity of proposed fault detection method.