• The Transactions of the Korean Institute of Electrical Engineers P
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• v.60 no.1
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• pp.48-52
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• 2011

Over the years, traditionally, six-switch three-phase inverters have been widely utilized for variable speed alternating current motor drives. Recently, some efforts have been made on the application of four-switch three phase inverter for uninterruptible power supply and variable speed drives. This is due to some advantages of the four-switch three phase inverter over the conventional six-switch three-phase inverters such as reduced price due to reduction in number of switches, reduced switching losses, reduced number of interface circuits to supply logic signals for the switches, simpler control algorithms to generate logic signals, less chances of destroying the switches due to lesser interaction among switches, and less real-time computational burden. However such as slow di/dt and speed limitation, are the inherent characteristics and main drawbacks of the four-switch configuration. Those problems can be overcome in conjugation with Voltage-doublers which has additional advantage, such as unity power factor correction.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.7
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• pp.1756-1764
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• 1996

In this paper, we propose a new switch element of buffered Banyan network and analysis it. The proposed switch element consists of CASO(Content ASsociated Output) buffers, its controller and 2*2 crossbar switch. This switch element increase the performance of buffered Banyan network by removing HOL blocking. Also, we analyze the proposed switch element by mathematical modelling method based on MY analysis model which is one of earier proposed models.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.213-219
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• 1994

Cu compensated Si doped GaAs (GaAs :Si:Cu has been chosen as the switch material. The GaAs material has been characterized by DLTS(Deep Level Transient Spectroscopy) technique and the obtained data were used in the computer simulation. Simulation studies are performed on several GaAs switch systems, composed of different densities of Cu, to investigate the influence of deep traps in the switch systems. The computed results demonstrates important aspect of the switch, the existence of two stable states and fast optical quenching. An important parameter optimum Cu density for the switch are also determined.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.225-230
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• 2013

This paper presents a novel shunt radio frequency microelectromechanical system switch on a quartz substrate with stiff ribs around the membrane. The buckling effects in the switch membrane and stiction problem are the primary concerns with RF MEMS switches. These effects can be reduced by the proposed design approach due to the stiffness of the ribs around the membrane. A lower mass of the beam and a reduction in the squeeze film damping is achieved due to the slots and holes in the membrane, which further aid in attaining high switching speeds. The proposed switch is optimized to operate in the k-band, which results in a high isolation of -40 dB and low insertion loss of -0.047 dB at 21 GHz, with a low actuation voltage of only 14.6 V needed for the operation the switch. The membrane does not bend with this membrane design approach. Finite element modeling is used to analyze the stress and pull-in voltage.

• 한국정보통신설비학회:학술대회논문집
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• 2006.08a
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• pp.67-70
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• 2006

This paper deals with a single crystalline silicon (SCS) RF MEMS switch for telecommunication system applications. The proposed SCS switch was fabricated using a silicon-on-glass (SiOG) process and its performances in terms of RF responses, switching time, lifetime were characterized. The proposed SCS switch consists of movable plates, mechanical spring structures, which are composed of robust SCS, resulting in mechanically good stability, The measured actuation voltage was 30 V, and with this applied voltage, the insertion loss and isolation characteristics were measured to be 0.05 and 44.6 dB at 2 GHz respectively. The measured switch ON and OFF time were 13 and $9{\mu}s$, respectively. The lifetime of the fabricated switch was tested. Even after over 1 billion cycles repeated ON/OFF actuations, the switch maintained its own characteristics.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2007.04a
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• pp.485-488
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• 2007

최근 Analog Sampled-Data 신호처리를 위하여 주목되고 있는 SI(Switched-Current) circuit은 저전력 동작을 하는 장점이 있지만, 반면에 SI circuit에서의 기본 회로인 Current Memory는 Charge Injection에 의한 Clock Feedthrough이라는 치명적인 단점을 갖고 있다. 따라서 본 논문에서는 Current Memory의 문제점인 Clock Feedthrough의 일반적인 해결방안으로 Dummy Switch의 연결을 검토하였고, Austria Mikro Systeme(AMS)에서 $0.35{\mu}m$ CMOS process BSIM3 Model로 제작하기 위하여 Current Memory의 Switch MOS와 Dummy Switch MOS의 적절한 Width을 정의하여야 하므로, 그 값을 도출하였다. Simulation 결과, Switch의 Width는 $2{\mu}m$, Dummy Switch의 Width는 $2.35{\mu}m$로 정의될 수 있음을 확인하였다.

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.38-40
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• 2002

In the case of conventional high frequency inverter, with damage of switch by surge voltage when switch gets into compulsion extinction by load accident and so on because reactor is connected by series to switch, or there was problem of conduction loss by reactor's resistivity component, Also, it has controversial point of that can not ignore conduction loss of switch in complete work kind action of soft switching. In this paper, as high frequency induction heating power supply, we propose half bridge type multi resonance soft switching high frequency inverter topology that can realize high amplitude operation of load current with controlling switch current by multiplex resonance, mitigating surge voltage when switch gets into compulsion extinction and to be complete operation of zero current switching by opposit parallel connected reactor to inverter switch. and do circuit analysis for choice of most suitable circuit parameter of circuit

• Journal of Korea Multimedia Society
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• v.6 no.2
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• pp.301-308
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• 2003

In this paper, we propose a multicast ATM switch that reduces traffic load by using the method of storing unicast cells and multicast cells separately according to the type of the cells. The switch is based on a shared memory type to reduce HOL blocking and deadlock. In the proposed switch, we use a control scheme that schedules stored cells to output ports to reduce the loss of traffic cells and to output effectively. We analyzed the Performance of the proposed switch through the computer simulation and the results have shown the effectiveness of the switch.

• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.411-414
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• 2014

A switch is one of the most useful circuits for controlling the path of signal transmission. It can be added to digital circuits to create a kind of gate-level device and it can also save information into memory. In RF subsystems, a switch is used in a different way than its general role in digital circuits. The most important characteristic to consider when designing an RF switch is keeping the isolation as high as possible while also keeping insertion loss as low as possible. For high isolation, we propose leakage signal cancellation and inductive switching for designing a singlepole double-throw (SPDT) RF switch. By using the proposed method, an isolation level of more than 23 dB can be achieved. Furthermore, the heterojunction bipolar transistor (HBT) process is used in the RF switch design to keep the insertion loss low. It is demonstrated that the proposed RF switch has an insertion loss of less than 2 dB. The RF switch operates from 1 to 8 GHz based on the $0.18-{\mu}m$ SiGe HBT process, taking up an area of $0.3mm^2$.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.9
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• pp.42-49
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• 2022

An underground electric switch is a high-voltage switch used in distribution network systems for a reliable power supply. Many studies are being conducted to expand the switch to use an eco-friendly gas using dry air instead of SF6 gas to reduce greenhouse gas emissions. In this study, a flow analysis model was established to improve the performance of an eco-friendly gas switch. The results were compared and reviewed through experiments. For the optimal arc grid design applied to the switch, the flow characteristics based on the flow path configuration and the changes in arcing time for each configuration were compared. Flow analysis can predict the switch flow distribution, and a comparative review of the flow path configurations of various methods is possible.