• Title/Summary/Keyword: surface improvement

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Improvement of surface defects by pre-treatment process capability upgrade in plating process (도금공정 전처리 성능개선을 통한 표면결함 개선)

  • O, Min-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2015.11a
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    • pp.193-193
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    • 2015
  • 도금공정에 있어서 전처리는 제품품질을 확보하는데 중요한 단계이다. 전처리 공정의 주요인자중 처리액의 온도, 처리시간, 교반력, 오염도를 개선함으로써 제품의 산화막 및 오염물질을 효과적으로 제거할 수 있었다.

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Study on Improvement of the Array Antenna Performance by Isolation Enhancement (격리도 향상을 통한 배열안테나의 성능개선 연구)

  • Park, Minseo;Lee, Jae-Gon;Lee, Jeong-Hae
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.3
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    • pp.229-238
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    • 2016
  • In this paper, we have studied isolation enhancement using a suppression of surface wave to improve performance of array antenna. To reduce isolation between elements of array antenna, perfect magnetic conductor(PMC) and SOFT-surface is designed and located at center of ground plane, isolation and gain is simulated by commercial full wave simulator(HFSS). As a result, isolation of more than 40 dB and gain improvement of 2.2 dBi are obtained at E-plane array in case of both PMC and SOFT-surface. At H-plane array, air coupling is dominant compared to coupling by surface wave. It is conclude that this study is useful for design of compact array antenna and performance improvement of array antenna.

Density and Corrosion Property Improvement of Zn-Mg Coatings by Controlling the Substrate Temperature during the Deposition (증착 기판 온도 제어에 따른 Zn-Mg 박막의 치밀도 및 내식성 향상에 관한 연구)

  • Song, Myeon-Kyu;La, Joung-Hyun;Kim, Hoe-Kun;Lee, Sang-Yul
    • Journal of Surface Science and Engineering
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    • v.50 no.4
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    • pp.266-271
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    • 2017
  • In this study, the corrosion resistance of Zn-3wt.%Mg coating was enhanced by controlling the density of coating. During the deposition the substrate temperature was controlled via an intermittent deposition process, resulting in the improvement of coating density. The maximum substrate temperature during this intermittent deposition process could be controlled from $200^{\circ}C$ to $80^{\circ}C$, depending upon the number of coating layer. The density of Zn-3 wt.%Mg coating increased from 76.1 % to 95.8 % as the substrate temperature was controlled. The salt spray test results revealed that the corrosion resistance of Zn-Mg coated steel could increase 3 times by increasing the density in coatings, while adhesion strength of coating was not changed significantly during 0-T bending test.

Improvement of carrier transport in silicon MOSFETs by using h-BN decorated dielectric

  • Liu, Xiaochi;Hwang, Euyheon;Yoo, Won Jong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2013.05a
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    • pp.97-97
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    • 2013
  • We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between $SiO_2$ and Si effectively weakens coulomb scattering by separating carriers in the silicon inversion layer from the charged centers as 2-dimensional h-BN is relatively inert and is expected to be free of dangling bonds or surface charge traps owing to the strong, in-plane, ionic bonding of the planar hexagonal lattice structure, thus leading to a significant improvement in mobility relative to undecorated system. Furthermore, the atomically planar surface of h-BN also suppresses surface roughness scattering in this Si MOSFET system, resulting in a monotonously increasing mobility curve along with gate voltage, which is different from the traditional one with a extremum in a certain voltage. Alternatively, high-k dielectrics can lead to enhanced transport properties through dielectric screening. Modeling indicates that we can achieve even higher mobility by using h-BN decorated $HfO_2$ as gate dielectric in silicon MOSFETs instead of h-BN decorated $SiO_2$.

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Surface States and Field Emission Properties of Oxygen Plasma Treated Carbon Nanotubes (산소 플라즈마 처리한 탄소나노튜브의 표면상태와 전계방출 특성)

  • Lee, Sunwoo;Lee, Boong-Joo;Park, Gu-Bum;Shin, Paik-Kyun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.62 no.3
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    • pp.376-379
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    • 2013
  • Multi-walled carbon nanotubes (MWCNTs) were synthesized using catalytic chemical vapor deposition (CVD) method. Oxygen plasma treatment was applied to modify surface state of the CNTs synthesized for improvement of field emission performance. Surface state of the plasma treated CNTs was studied by X-ray photoelectron spectroscopy (XPS). The surface states of the CNTs were changed as a function of plasma treatment time. The oxygen related carbon shift was moved toward higher binding energy with the plasma treatment time. This result implies that the oxygen plasma treatment changes the surface state effectively. While any shift in carbon 1s peak was not detected for the as grown CNTs, oxygen related carbon shift was detected for the plasma treated CNTs. Carbon shift implies that closed CNT tips were opened by the oxygen plasma and reacted with oxygen species. Since the field emission occurs at pentagons or dangling bonds of the CNT tips, the increase of carbon-oxygen bonds plays an important role in field emission behavior by increasing the number of electron emission sites resulting in improvement of the field emission performance.