• Korean Journal of Materials Research
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• v.4 no.4
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• pp.379-384
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• 1994

Room-temperature photoluminescent porous Si has been formed by etching Si wafer u-ith the solution of $HF:HNO_{3}: H_{2}O$=l : 5 : 10. We have observed photoluminescence(PL) spectra similar to those reported recently for porous-Si films formed by anodic etching with HF solutions. We have also investigated the dependence of PI, spectra on the etching time which was varied from 1 to 10 minutes. We found that 5-minute etching gave us the strongest PL intensity. We also found by atomic force microscopy( AFM) measurements that the surface fearure size became smaller for longer etching time and the average feature size of the etched Si wafer for 5-minute was about 1, 500~2, 000$\AA$. This indicates that the surface feature of the etched porous Si affects the PL intensity of the sample.

• Journal of Technologic Dentistry
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• v.38 no.3
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• pp.175-183
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• 2016

Purpose: Observation of Oxide Film Formation and Bonding Strength according to surface treatment of Co-Cr Alloy for porcelain fused to Metal. Methods: metal specimens $0.5mm{\times}25mm{\times}4mm$ in size were made using Co-Cr alloys for porcelain fused to metal crown (Heraenium P, Tae jung Medis). Dental porcelain $0.5mm{\times}25mm{\times}4mm$ in size was sintered on the metal specimens after changing the etching time, sandblasting condition, and heat treatment temperature. Subsequently, the bonding strength was compared by the three-point flexural strength test using a universal testing machine (UTM) to observe the fracture surface and oxidized layers. Results: With regard to the experimental group treated with acid-etching, Specimen 1 treated for 25 minutes (B-3) showed the highest bonding strength, and Specimen 2 treated only with sandblasting showed the most excellent bonding force at 3.5 bar (C-3). With regard to the experimental group treated with sandblasting at 3.5 bar after acid-etching for 25 minutes, Specimen 3 with heat treatment at $980^{\circ}C$ (D-3) showed the highest bonding strength. Conclusion: The specimen which went through both sandblasting and etching, showed an excellent ceramicmetal bond strength.

• Korean Journal of Metals and Materials
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• v.46 no.3
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• pp.169-173
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• 2008

Characteristics of etching and induced surface morphology variation by wet-etching of n-type GaN were investigated using phosphoric acidic solutions. Generally, the etch-rate was increased as the temperature of the etch solutions was increased, and the highest etch rate of about $300{\AA}/min$ was achieved at the temperature of $180^{\circ}C$. The morphology variation of the etched surface was observed by optical microscopy and atomic force microscopy. Initially, high density of hexagonal holes or pits were formed on the etched surface at the time of 40 min with the bimodal size of $20{\mu}m$ or $5{\mu}m$, respectively. However, as the etching time was increased further, the lateral size of the hexagonal holes or pits was increased, and finally, joined and merged together at the time of 100 min. This means that the etching of n-type GaN by phosphoric acidic solutions proceeded through the lateral widening and the merging of initial holes and pits.

• Applied Chemistry for Engineering
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• v.20 no.5
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• pp.557-560
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• 2009

In this study, a new wet etching method and the solution for thinning the glass with the thickness below $100{\mu}m$ were investigated. For the preparation of etching solution with low hydrofluoric acid, it was effective to use $NH_4F$ or $NH_4HF_2$ as a main ingredient with the addition of sulfuric acid or nitric acid. Influence of the composition of mixed acid solution and the temperature on the etching rate was investigated. The addition of anionic surfactant provides the function to prevent the adhesion of sludge generated by the etching reaction. A new wet etching pilot device equipped with streaming generation parts was used to test etching of commercial non-alkali glass and soda lime glass. The non-alkali glass with the thickness of 640 ${\mu}m$ and soda lime glass with the thickness of $500{\mu}m$ were etched to $45{\mu}m$ and $100{\mu}m$, respectively, by using the pilot device. After the etching by pilot device, the roughness degree of the glass surface was maintained at $0.01{\sim}0.02{\mu}m$.

• Journal of the Korean institute of surface engineering
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• v.48 no.6
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• pp.360-370
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• 2015

As the size of the semiconductor devices shrinks to nanometer scale, the importance of plasma etching process to the fabrication of nanometer scale semiconductor devices is increasing further and further. But for the nanoscale devices, conventional plasma etching technique is extremely difficult to meet the requirement of the device fabrication, therefore, other etching techniques such as use of multi frequency plasma, source/bias/gas pulsing, etc. are investigated to meet the etching target. Until today, various pulsing techniques including pulsed plasma source and/or pulse-biased plasma etching have been tested on various materials. In this review, the experimental/theoretical studies of pulsed plasmas during the nanoscale plasma etching on etch profile, etch selectivity, uniformity, etc. have been summarized. Especially, the researches of pulsed plasma on the etching of silicon, $SiO_2$, and magnetic materials in the semiconductor industry for further device scaling have been discussed. Those results demonstrated the importance of pulse plasma on the pattern control for achieving the best performance. Although some of the pulsing mechanism is not well established, it is believed that this review will give a certain understanding on the pulsed plasma techniques.

• Restorative Dentistry and Endodontics
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• v.28 no.5
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• pp.363-368
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• 2003

The purpose of this study is to evaluate the effect of additional enamel etching with phosphoric acid on the microleakage of the adhesion of self-etching primer system. Class V cavity($4mm{\times}3mm{\times}1.5mm$) preparations with all margins in enamel were prepared on buccal surface of 42 extracted human upper central incisor teeth. Prepared teeth were randomly divided into 3 groups. Group 1：no additional pretreatment with 37% phosphoric acid (NE). Group 2：additional pretreatment with 37% phosphoric acid for 10 seconds (E10s). Group 3：additional pretreatment with 37% phosphoric acid for 20 seconds (E20s). The adhesives(Clearfil SE $Bond^{\circledR}$, Kuraray, Osaka, Japan) and composite resins(Clearfil $AP-X^{\circledR}$, Osaka, Kuraray, Japan) were applied following the manufacturer's instructions. All the specimens were finished with the polishing disc(3M dental product, St Paul, MN, USA), thermocycled for 500 cycles between $5^{\circ}C$ and $55^{\circ}C$ and resected apical 3-mm root. 0.028 stainless steel wire was inserted apically into the pulp chamber of each tooth and sealed into position with sticky wax. Surrounding tooth surface was covered with a nail varnish 2 times except areas 1mm far from all the margins. After drying for one day, soaked the samples in the distilled water. Microleakage was assessed by electrochemical method(System 6514, $Electrometer^{\circledR}$), Keithley, USA) in the distilled water. In this study, the microleakage was the lowest in group 1 (NE) and the highest in group 3(E20s)(NE

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.35-39
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• 2019

Effect of Ge₂Sb₂Te₅ (GST) chalcogen composition on plasma induced damage was investigated by using Ar ions and F radicals. Experiments were carried out with three different modes; the physical etching, the chemical etching, and the ion-enhanced chemical etching mode. For the physical etching by Ar ions, the sputtering yield was obtained according to ion bombarding energy and there was no change in GST composition ratio. In the plasma mode, the lowest etch rate was measured at the same applied power and there was also no plasma induced damage. In the ion-enhanced chemical etching conditions irradiated with high energy ions and F halogen radicals, the GST composition ratio was changed according to the density of F radicals, resulting in higher roughness of the etched surface. The change of GST composition ratio in halogen plasma is caused by the volatility difference of GST-halogen compounds with high energy ions over than the activation energy of surface reactions.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.264-267
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• 2007

It is important to reduce optical losses from front surface reflection to improve the efficiency of crystalline silicon solar cells. Surface texturing by isotropic etching with acid solution based on HF and $HNO_3$ is one of the promising methods that can reduce surface reflectance. Anisotropic texturing with alkali solution is not suitable for multicrystalline silicon wafers because of its various grain orientations. In this paper, we textured multicrystalline silicon wafers by simple wet chemical etching using acid solution to reduce front surface reflectance. After that, surface morphology of textured wafer was observed by Scanning Electron Microscope(SEM) and Atomic Force Microscope(AFM), surface reflectance was measured in wavelength from 400nm to 1000nm. We obtained 29.29% surface reflectance by isotropic texturing with acid solution in wavelength from 400nm to 1000nm for fabrication of multicrystalline silicon solar cells.

• The Journal of Advanced Prosthodontics
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• v.8 no.4
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• pp.275-284
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• 2016

PURPOSE. The aim of this study was to evaluate the influence of different surface treatment methods on the microtensile bond strength of resin cement to resin nanoceramic (RNC). MATERIALS AND METHODS. RNC onlays (Lava Ultimate) (n=30) were treated using air abrasion with and without a universal adhesive, or HF etching followed by a universal adhesive with and without a silane coupling agent, or tribological silica coating with and without a universal adhesive, and divided into 6 groups. Onlays were luted with resin cement to dentin surfaces. A microtensile bond strength test was performed and evaluated by one-way ANOVA and Tukey HSD test (${\alpha}$=.05). A nanoscratch test, field emission scanning electron microscopy, and energy dispersive X-ray spectroscopy were used for micromorphologic analysis (${\alpha}$=.05). The roughness and elemental proportion were evaluated by Kruskal-Wallis test and Mann-Whitney U test. RESULTS. Tribological silica coating showed the highest roughness, followed by air abrasion and HF etching. After HF etching, the RNC surface presented a decrease in oxygen, silicon, and zirconium ratio with increasing carbon ratio. Air abrasion with universal adhesive showed the highest bond strength followed by tribological silica coating with universal adhesive. HF etching with universal adhesive showed the lowest bond strength. CONCLUSION. An improved understanding of the effect of surface treatment of RNC could enhance the durability of resin bonding when used for indirect restorations. When using RNC for restoration, effective and systemic surface roughening methods and an appropriate adhesive are required.

• Journal of the Korean institute of surface engineering
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• v.34 no.1
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• pp.10-16
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• 2001

Recently plasma etching research has been focused on the metal surfaces in the nuclear industry. In this study, surface etching reaction of metallic Co and Mo, principal contaminants in the spent nuclear components, in CF$_4$/O$_2$, gas plasma has been experimentally investigated to look into the applicability and the effectiveness of the technique for the surface decontamination. Experimental variables are $CF_4$/$O_2$ ratio and substrate temperature between 29$0^{\circ}C$ and 38$0^{\circ}C$. Experimental results Show that the optimum gas composition is 80%CF$_4$-20%$O_2$ and the metallic Co and Mo are etched out well enough in the temperatures range. Cobalt starts to be etched above $350^{\circ}C$ and the etching rate increases with increasing substrate temperature. Maximum rate achieved at 38$0^{\circ}C$ under 220 W r.f. plasma power is 0.06 $\mu\textrm{m}$/min. On the other hand, the metallic Mo is etched easily even at low temperature and the reaction rate drastically increases as the substrate temperature goes up. Highest rate obtained under the same conditions is $1.9\mu\textrm{m}$/min. OES (Optical Emission Spectroscopy) analysis reveals that the intensities of F atom and CO molecule reach maximum at the optimum gas composition, which demonstrates that the principal reaction mechanism is fluorination and/or carbonyl reaction. It is confirmed, therefore, that dry processing technique using reactive plasma is quite feasible and applicable for the decontamination of surface-contaminated parts or equipments.