• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.2
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• pp.409-413
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• 2010

We fabricated 10 nm-thick cobalt silicide($CoSi_2$) as a buffer layer on a p-type Si(100) substrate to investigate the possibility of GaN epitaxial growth on $CoSi_2/Si(100)$ substrates. We deposited 500 nm-GaN on the cobalt silicide buffer layer at low temperature with a PA-MBE (plasma assisted-molecular beam epitaxy) after the $CoSi_2/Si$ substrates were cleaned by HF solution. An optical microscopy, AFM, TEM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. For the GaN samples without HF cleaning, they showed no GaN epitaxial growth. For the GaN samples with HF cleaning, they showed $4\;{\mu}m$-thick GaN epitaxial growth due to surface etching of the silicide layers. Through XRD $\omega$-scan of GaN <0002> direction, we confirmed the cyrstallinity of GaN epitaxy is $2.7^{\circ}$ which is comparable with that of sapphire substrate. Our result implied that $CoSi_2/Si(100)$ substrate would be a good buffer and substrate for GaN epitaxial growth.

• Restorative Dentistry and Endodontics
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• v.33 no.2
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• pp.141-147
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• 2008

This study was aimed to develop an instrument for real-time measurement of fluid conductance and to investigate the hydrodynamics of dentinal fluid. The instrument consisted of three parts; (1) a glass capillary and a photo sensor for detection of fluid movement, (2) a servo-motor, a lead screw and a ball nut for tracking of fluid movement, (3) a rotary encoder and software for data processing. To observe the blocking effect of dentinal fluid movement, oxalate gel and self-etch adhesive agent were used. BisBlock (Bisco) and Clearfil SE Bond (Kuraray) were applied to the occlusal dentin surface of extracted human teeth. Using this new device, the fluid movement was measured and compared between before and after each agent was applied. The instrument was able to measure dentinal fluid movement with a high resolution (0.196 nL) and the flow occurred with a rate of 0.84 to 15.2 nL/s before treatment. After BisBlock or Clearfil SE Bond was used, the fluid movement was decreased by 39.8 to 89.6%.

• The Journal of Korean Academy of Prosthodontics
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• v.28 no.2
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• pp.53-76
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• 1990

The purpose of this study was to evaluate the tensile bond strength of adhesive resins to successively recast Rexillium III and Degudent-U. Recasting was done 4times successively. Specimen $A_1$, were cast by new metal, and $A_2$ by surpus of $A_1$, $A_3$ by surplus of, $A_2$ $A_4$ by surplus of $A_3$, $A_5$ by surplus of $A_4$ plus 50% new metal. The types of surface treatment for resinbonded restoration in this experiment were electrolytic etching by OXY-ETCH(Oxy dental products, Inc., Hillside, New Jersey, U.S,A.), aluminum oxide blasting, anodic oxidation by EZ-OXISOR( Towagiken Co., Kyoto, Japan), electrotinplating by Kura Ace(Kuralay Co., Kyoto, Japan). Three kinds of cementing resin used in this study were Comspan(K.P. Cauil Co, Milford Delaware, U.S.A.), Super Bond C&B(Sun-Medical Co. Ltd., Kyoto,Japan), Panavia EX(Kuralay Co., Ltd., Osaka, Japan). Tensile bond strength was measured by Instron Universal testing machineModel 1125) and all the specimen were observed with SEM(JEOL, JSM-T2000) and mode of bond failure were recorded. The obtained results were as follows : 1. In electrolytic etched group, tensile bond strength was decreassed when recast alloy was used, and tensile bond strength of Compan and panavia EX were not significantly different(P>0.05). 2. In remaining group treated by aluminum oxide blasting, EZ-OXIOR, Kura Ace, tensile bond strength were not changed when recast alloy were used, and tensile bond strength of SuperBond(C&B and Panavia EX were not significantly different(P>0.05). 3. IN SEM evaluation, electrolytic etched group and electrotinplated group exhibited different image when recast alloy was used, and remaining groups treated by aluminum oxide blasting, EZ-OXISOR exhibited the same. 4. IN observation of bond failure, electrolytic etched group exhibited adhesive failure and remaing groups treated by aluminium oxid blasting, EZ-OXISOR, Kura Ace exhibited adhesive and cohesive failure.

• Journal of the Korean Chemical Society
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• v.45 no.4
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• pp.341-350
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• 2001

Aluminum Hydroxide was employed as a thermal retardent and flame retardent for Chloropolyethylene (CPE) rubbery materials which is the construction material of automotive oil cooler hose. and then cure characteristics, physical properties, thermal resistance and flame retardation of compounded rubber were investigated, and optimum mixing conditions of rubber and flame retarding agent were deduced from the experimental results. CPE rubber material which has excellent properties of chemical corrosion resistance and cold resistance and inexpensive in price was used to prepare rubber specimen. The by-product of ething, produced from the process of surface treatment of aluminum was processed to aluminum hydroxide via crushing and purification, which is characterized by XRD, PSA, SEM and ICP-AES techniques in terms of phase, size, distribution, morphology and components of particles and then mixed to CPE rubber materials in the range of 0~80 phr. Hardness, tensile strength, elongation and thermal properties of compounded rubber specimens were tested. The optimum mixing ratio of rubber to additives to give maximum effect on thermal resistance and flame retardation, within the range of tolerable specification for rubber materials, was determined to be 40 phr. The flame retardation of CPE rubber materials was found to be increased by 5 times at this mixing ratio.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.1-5
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• 2006

We prepared 80 nm-thick TiSix on each 70 nm-thick amorphous silicon and polysilicon substrate using an RF sputtering with $TiSi_2$ target. TiSix composite silicide layers were stabilized by rapid thermal annealing(RTA) of $800^{\circ}C$ for 20 seconds. Line width of $0.5{\mu}m$ patterns were embodied by photolithography and dry etching process, then each additional annealing process at $750^{\circ}C\;and\;850^{\circ}C$ for 3 hours was executed. We investigated the change of sheet resistance with a four-point probe, and cross sectional microstructure with a field emission scanning electron microscope(FE-SEM) and transmission electron microscope(TEM), respectively. We observe an abrupt change of resistivity and voids at the silicide surface due to interdiffusion of silicide and composite titanium silicide in the amorphous substrates with additional $850^{\circ}C$ annealing. Our result implies that the electrical resistance of composite titanium silicide may be tunned by employing appropriate substrates and annealing condition.

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.79-79
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• 2010

Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.3
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• pp.116-120
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• 2006

We have investigated plasma spray coated $Al_2O_3$ layers on Al-60 series substrates for development of wafer electrostatic chuck in semiconductor dry etching system. Samples were prepared without/with cooling bar on backside of samples, at various distances, and with different powder feed rates. There were many cracks and pores in the $Al_2O_3$ layers coated on Al-60 series substrates without cooling bar on the backside of samples. But the cracks and pores were almost disappeared in the $Al_2O_3$ layers on Al-60 series substrates coated with cooling bar on the back side of samples, 15 g/min. powder feed rate and various 60, 70, 80 mm working distances. Then the surface morphology was not changed with various working distances of 60, 70, 80 mm. When the powder feed rate was changed from 15 g/min to 20 g/min, the crack did not appear, but few pores appeared. Also the $Al_2O_3$ layer was coated with many small splats compared with $Al_2O_3$ layer coated with 15 g/min powder feed rate. The deposited rate of $Al_2O_3$ layer was higher when the process was done without cooling bar on the back side of sample than that with cooling bar on the back side of sample.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.324-325
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• 2014

Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Restorative Dentistry and Endodontics
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• v.22 no.1
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• pp.228-243
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• 1997

The changes of microstructures, morphology of sclerotic dentin and bonding aspects generated by an adhesive resin was investigated. Incisors and premolars showing natural cervical abrasions were collected and conditioned with 10 % phosphoric acid or 10 % maleic acid. The sclerotic dentin specimens were then rinsed and blot-dried and applied with dentin adhesive (All Bond 2) to the conditioned dentin surface. To examine the morphologic change of the sclerotic dentin specimen after etching and bonding procedure, the treated specimens were examined by SEM. To analyze the chemical composition of sclerotic dentin and crystals occluding dentinal tubules, the sclerotic dentin specimen was powdered and examined with X-ray Diffractometer. To investigate the Ca/P weight percent ratio within the dentinal tubules, the sclerotic dentin specimen was fractured perpendicularly to the long axis of the tooth from the center of cervical abrasion lesion and then examined with EDX(Energy Dispersive X-ray) microanalyzer. The results were as follows : 1. The increased width of peritubular dentin and the depositions of the irregular amorphous materials within the dentinal tubules were showed in the sclerotic dentin specimens. 2. After the treatment of sclerotic dentin specimen with 10 % phosphoric acid or 10 % maleic acid, the lateral side of tubules rather than cross-sectional tubule openings was showed exclusively at the incisal and gingival incline of the specimens. 3. After the treatment of sclerotic dentin specimen with 10 % phosphoric acid or 10 % maleic acid, the hybrid layer was not formed evidently and the resin tag was not formed or shortly penetrated into the tubules with the thinner diameter. 4. According to the results of XRD analysis of the sclerotic dentin specimen, Hydroxyapatite and Octacalcium phosphate were predominent, however, Whitlockite crystals were rare. 5. The mean Ca/P weight percent ratio analysed from 5 fractured sclerotic dentin specimens was $2.322{\pm}0.170$ at the intertubular dentin, $1.826{\pm}0.051$ within the dentinal tubule.