• Applied Chemistry for Engineering
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• v.10 no.1
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• pp.67-72
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• 1999

Optimal pretreatment processes for metal plating on engineering plastics, especially on Nylon-inorganic filler alloy was studied. For Nylon-inorganic filler alloy, adhesion strength between resin surface and metal could be improved by just etching process that eliminate amorphous layer. In the SEM picture and surface roughness measurement, etching treatment was found to make enabled the surface condition very rough and the adhesion strength good. It was also found that the surface condition of plated article and its adhesion strength partly depended upon molding condition of Nylon-inorganic filler alloy. EDS, peaks showed that what kinds of and how much of the metal elements remained on the resin surface after pretreatment processes. Cr did not affect on adsorption of Sn and Pd remarkably.

• Journal of the Korean Ceramic Society
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• v.46 no.6
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• pp.685-688
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• 2009

Surface Texturing is very important process for high cell efficiency in crystalline silicon solar cell. Anisotropic texturing with an alkali etchant was known not to be able to produce uniform surface morphology in multi-crystalline silicon (mc-Si), because of its different etching rate with random crystal orientation. In order to reduce surface reflectance of mc-Si wafer, the general etching tendency was studied with HF/HN$O_3$/De-ionized Water acidic solution. And the surface structures of textured mc-Si in various HF/HN$O_3$ ratios were compared. The surface morphology and reflectance of textured silicon wafers were measured by FE-SEM and UVvisible spectrophotometer, respectively. We obtained average reflectance of $16{\sim}19$% for wavelength between 400 nm and 900 nm depending on different etching conditions.

• The Journal of Korean Academy of Prosthodontics
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• v.23 no.1
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• pp.83-95
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• 1985

The purpose of this study was to evaluate microstructures on the etched surface of 11 base metal alloys for dental restorations and to observe the relationship between the etching pattern and beryllium. For this purpose, the following experiments were done; 11 base metal alloys were etched in (1) 10% $H_2SO_4$, (2) 10% $H_2SO_4$, 9 parts+methanol 1 part (3) Conc. $HNO_3$ 25%+glacial acetic acid 25%+$H_2O$ 50% (4) Conc. $HNO_3$ 5% (5) 2% glacial acetic acid added to Conc. $HNO_3$ 1% solution, with their etching conditions varied. Etched surface of alloys were examined under the scanning electron microscope. Results were as follows; 1. Almost all of Ni-Cr-Be alloys showed gooed etchd surface in $H_2SO_4$, solution, while some of those alloys which contains no beryllium showed good etched surface in $HNO_3$ solution. 2. Main components of etching solution can vary etching pattern of alloys. 3. Gamma prime phase relief, which can be found in all Ni-Cr-Be alloys, can't be found in any alloy that contains no beryllium.

• Korean Journal of Metals and Materials
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• v.46 no.12
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• pp.835-840
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• 2008

Texturing for crystalline silicon solar cells is one of the important techniques to increase conversion efficiency by effective photon trapping. Generally, incoming wafers or alkali etched wafers are used for texturing. From this conventional etching process, $7{\sim}10{\mu}m$-sized random pyramids are formed. In this study, acid etching for removal of saw damages was practiced before texturing. This improved the resulting surface morphology, which consisted of $2{\sim}4{\mu}m$-sized pyramids. Because these pyramids covered the surface much more extensively, we obtained reduction of optical losses on the surface. In order to compare with conventional texturing, FE-SEM is used for observing surface morphology and reflectance data is analyzed by UV-VIS spectrophotometer.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.5
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• pp.265-269
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• 2000

$(Ba, Sr)TiO_3$thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) at different CF4/Ar gas mixing ratios. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1800{AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) results show that surface reaction between Ba, Sr, Ti and C, F radicals occurs during the (Ba, Sr)TiO3 etching. To analyze the composition of surface residue after the etching, films etched with different CF_4/Ar$ gas mixing ratio were investigated using XPS and secondary ion mass spectroscopy (SIMS).

• Journal of the Korean institute of surface engineering
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• v.28 no.2
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• pp.101-109
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• 1995

Electroetching rates of $FeCl_3$ solution were increased according to increasing solution temperature. Activation energy of electroetching at Be'36 and 5A/$dm^2$ condition was 28.3Kcal and also, at Be'46 and 5A/dm$^2$ condition was 33.2Kcal. At Be'36 concentration of $FeCl_3$ solution, electroetching rate were more higher than at Be'46 concentration. Surfaces of etched grooves obtained at 8A/$dm^2$ or higher current density in 46 Be' concentration of $FeCl_3$ solution were observed to be flat and smooth owing to suppressing chemical etching reaction. Distinctly etched boundaries became to be appeared at 2A/$dm^2$ in Be'41 electroetching condition by differential effects. In case of applying 8A/$dm^2$ current density to Be'46 of $FeCl_3$ solution, etching depth were 4 times and side etching were 6 times more than chemical etching case respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.52-55
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• 2000

In this study, (Ba,Sr)$TiO_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) as a function Ar/$CF_4$ gas mixing ratio. Experiment was done by varying the etching parameters such as rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 ${\AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X -ray photoelectron spectroscopy(XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the etching. To analyze the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

• The Journal of Korean Academy of Prosthodontics
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• v.30 no.1
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• pp.85-91
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• 1992

The purpose of this study was to evaluate the bonding strength between porcelain laminate and Ni-Cr alloy in the various surface treatments of the bonding faces. For this study the metal surface of specimens were treated : 1) etching only, 2) sandblasting only, and 3) sandblasting and etching. The porcelain laminate were made and bonded to the metal specimens with light curing composite resin cement. Instron testing machine was used to measure their bonding strength : and the result was obtained as follows : 1. The bonding strength of the double treatment of the sandblasting and etching group was higher than that of the single treatment of sandblasting or the etching group. 2. The bonding strength of the sand blasting group was higher than that of the etching group. 3. The debonding were mainly occurred between the Ni-Cr alloy and the composite resin cement.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1344-1348
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• 2003

It is generally known to be difficult to etch a surface of a transparent material such as fused silica by conventional laser ablation in which the surface is simply irradiated with a laser beam. A lot of studies have been done to provide a method capable of efficiently etching transparent materials without defects such as cracks. One of the promising methods or the micro-machining of optically transparent materials is laser induced etching. In this study, micro-drilling of fused silica by laser induced wet etching was conducted. KrF excimer and YAG laser were used as light sources. Acetone solution pyrene and ethanol solution of rhodamine were used as etchant.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.1068-1071
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• 2001

Recently, the minimum line width shows a tendancy to decrease and the multi-level to increase in semiconductor. Therefore, a planarization technique is needed, which chemical polishing(CMP) is considered as one of the most important process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as microscratches, abrasive contaminations, and non-uniformity of polished wafer edges. Spin Etching can improve the defects of CMP. It uses abrasive-free chemical solution instead of slurry. Wafer rotates and chemical solution is simultaneously dispensed on a whole surface of the wafer. Thereby chemical reaction is occurred on the surface of wafer, material is removed. On this study, TEOS film is removed by CMP and Spin Etching, the results are estimated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU).