• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1462-1466
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• 2013

We demonstrate that ruthenium oxide ($RuO_2$) nanotubes with controlled dimensions can be synthesized using facile electrochemical means and anodic aluminum oxide (AAO) templates. $RuO_2$ nanotubes were formed using a cyclic voltammetric deposition technique and an aqueous plating solution composed of $RuCl_3$. Linear sweep voltammetry (LSV) was used to determine the effective electrochemical oxidation potential of $Ru^{3+}$ to $RuO_2$. The length and wall thickness of $RuO_2$ nanotubes can be adjusted by varying the range and cycles of the electrochemical cyclic voltammetric potentials. Thick-walled $RuO_2$ nanotubes were obtained using a wide electrochemical potential range (-0.2~1 V). In contrast, an electrochemical deposition potential range from 0.8 to 1 V produced thin-walled and longer $RuO_2$ nanotubes in an identical number of cycles. The dependence of wall thickness and length of $RuO_2$ nanotubes on the range of cyclic voltammetric electrochemical potentials was attributed to the distinct ionic diffusion times. This significantly improves the ratio of surface area to mass of materials synthesized using AAO templates. Furthermore, this study is directive to the controlled synthesis of other metal oxide nanotubes using a similar strategy.

• Journal of Microbiology and Biotechnology
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• v.31 no.11
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• pp.1519-1525
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• 2021

Hexavalent chromium (Cr(VI)) is recognized to be carcinogenic and toxic and registered as a contaminant in many drinking water regulations. It occurs naturally and is also produced by industrial processes. The reduction of Cr(VI) to Cr(III) has been a central topic for chromium remediation since Cr(III) is less toxic and less mobile. In this study, fermentative Fe(III)-reducing bacterial strains (Cellu-2a, Cellu-5a, and Cellu-5b) were isolated from a groundwater sample and were phylogenetically related to species of Cellulomonas by 16S rRNA gene analysis. One selected strain, Cellu-2a showed its capacity of reduction of both soluble iron (ferric citrate) and solid iron (hydrous ferric oxide, HFO), as well as aqueous Cr(VI). The strain Cellu-2a was able to reduce 15 μM Cr(VI) directly with glucose or sucrose as a sole carbon source under the anaerobic condition and indirectly with one of the substrates and HFO in the same incubations. The heterogeneous reduction of Cr(VI) by the surface-associated reduced iron from HFO by Cellu-2a likely assisted the Cr(VI) reduction. Fermentative features such as large-scale cell growth may impose advantages on the application of bacterial Cr(VI) reduction over anaerobic respiratory reduction.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.75-87
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• 1996

This review is presented under the following headings: 1.Introduction 1.1 Brief review of the properties of AlN 1.2 Historical survey of work on ceramic and single crystal AlN 2.Thermochemical background 3.Crystal growth 4.Doping 5.Potential applications and future work The known properties of AlN which make it of interest for various are discussed briefly. The properties include chemical stability, crystal structure and lattice constants, refractive indices and other optical properties, dielectric constant, surface acoustic wave velocity and thermal conductivity. The history of work in single crystals, thin films and ceramics are outlined and the thermochemistry of AlN reviewed together with some of the relevant properties of aluminium and nitrogen; the problems encountered in growing crystals of AlN are shown to arise directly from these thermochemical relationships. Methods have been reported in the literature for growing AlN crystals from melts, solution and vapour and these methods are compared critically. It is proposed that the only practicable approach to the growth of AlN is by vapour phase methods. All vapour based procedures share the share the same problems: $.$the difficulty of preventing contamination by oxygen & carbon $.$the high bond energy of molecular nitrogen $.$the refractory nature of AlN (melting point~3073K at 100ats.) $.$the high reactivity of Al at high temperatures It is shown that the growth of epitactic layers and polycrystalline layers present additional problems: $.$chemical incompatibility of substrates $.$crystallographic mismatch of substrates $.$thermal mismatch of substrates The result of all these problems is that there is no good substrate material for the growth of AlN layers. Organometallic precursors which contain an Al-N bond have been used recently to deposit AlN layers but organometallic precursors gave the disadvantage of giving significant carbon contamination. Organometallic precursors which contain an Al-N bound have been used recently to deposit AlN layers but organometallic precursors have the disadvantage of giving significant carbon contamination. It is conclude that progress in the application of AlN to optical and electronic devices will be made only if considerable effort is devoted to the growth of larges, pure (and particularly, oxygen-free) crystals. Progress in applications of epi-layers and ceramic AlN would almost certainly be assisted also by the availability of more reliable data on the pure material. The essential features of any stategy for the growth of AlN from the vapour are outlined and discussed.

• The Journal of Korean Academy of Prosthodontics
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• v.49 no.4
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• pp.333-340
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• 2011

Purpose: The aim of this study was to study the effect of hydroxyapatite (HA) coating crystallinity on the proliferation and differentiation of human osteosarcoma cells. Materials and methods: Surface roughness of the titanium disks increased by anodizing treatment and then HA was coated using ion beam-assisted deposition (IBAD). HA coating was crystallized by heat-treated at different temperature ($100^{\circ}C$, $300^{\circ}C$, $500^{\circ}C$, $800^{\circ}C$). According to the temperature, disks were divided into four groups (HA100, HA300, HA500, HA800). With the temperature, crystallinity of the HA coating was different. Anodized disks were used as control group. The physical properties of the disk surface were evaluated by surface roughness tests, XRD tests and SEM. The effect of the crystallinity of HA coating on HOS cells was studied in proliferation and differentiation. HOS cells were cultured on the disks and evaluated after 1, 3, 5, and 7 days. Growth and differentiation kinetics were subsequently investigated by evaluating cell proliferation and alkaline phosphatase activity. Results: Regardless of the heat-treated temperature, there is no difference on the surface roughness. Crystallinity of the HA was appeared in the groups of HA500, HA800. HOS cells proliferation, ALP activity were higher in HA500 and HA800 group than HA100 and HA300. Conclusion: Within the results of this limited study, heat treatment at $500^{\circ}C$ of HA coating produced by IBAD has shown greater effect on proliferation and differentiation of HOS cells. It is considered that further in vivo study will be necessary.

• Journal of the Korean Magnetics Society
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• v.14 no.2
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• pp.59-64
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• 2004

We investigated the soft magnetic properties of nanocrystalline Fe-Al-O film as etching the oxide film with ion beam etching method. It is thought that the grain size of Fe-Al-O film increases as the thickness decreases. The coercivity and squareness increase with decreasing thickness. The surface curvature of Am images increases when the etching experiment proceeds. This phenomena could be due to the grain growth which occurs during sputtering. This grain growth could be assisted by the the plasma energy during sputtering. Therefore proper thickness should be searched to acquire the good soft magnetic properties for the nanocrystalline film material. Good soft magnetic properties of Fe-Al-O film was acquired at the thickness of more than 900 nm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.2
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• pp.49-52
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• 2006

Periodic electric field assisted poling low loss (${\sim}0.1dB/cm$) single-mode Ti-diffused waveguides in $LiNbO_3$ has been achieved using a periodically patterned electrode on the +Z surface of Ti : $LiNbO_3$ crystal and homogeneous LiCl solution. Using selective chemical etching, we confirmed the periodic (${\sim}16{\mu}m$) domain inverted structure and measured SH (second harmonic) properties of fabricated periodically poled Ti : $LiNbO_3$ waveguides.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• The Plant Pathology Journal
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• v.37 no.1
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• pp.24-35
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• 2021

Blue mold caused by Penicillium expansum is one of the most significant postharvest diseases of apples. Some microorganisms associated with the surface of ripening apples possess the ability to inhibit the growth of P. expansum. However, the existing literature about their colonization in the stages before ripening is not explored in depth. This study aims to characterize the antagonistic capacity of bacterial populations from five fruit development stages of 'Royal Gala' apples. The results have shown that the density of the bacterial populations decreases throughout the ripening stages of fruit (from 1.0 × 105 to 1.1 × 101 cfu/㎠). A total of 25 bacterial morphotypes (corresponding to five genera identified by 16S RNA) were differentiated in which Bacillus stood out as a predominant genus. In the in vitro antagonism tests, 10 Bacillus strains (40%) inhibited the mycelial growth of P. expansum from 30.1% to 60.1%, while in fruit bioassays, the same strains reduced the fruit rot ranging from 12% to 66%. Moreover, the bacterial strains with antagonistic activity increased in the ripening fruit stage. B. subtilis subsp. spiziennii M24 obtained the highest antagonistic activity (66.9% of rot reduction). The matrix-assisted laser desorption ionization-time of flight mass spectrometry analysis revealed that bacteria with antagonistic activity produce anti-fungal lipopeptides from iturin and fengycin families.

• Korean Journal of Metals and Materials
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• v.56 no.12
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• pp.915-920
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• 2018

With the development of modern microelectronics technologies, the power density of electronic devices is rapidly increasing, due to the miniaturization or integration of device elements which operate at high frequency, high power conditions. Resulting thermal problems are known to cause power leakage, device failure and deteriorated performance. To relieve heat accumulation at the interface between chips and heat sinks, thermal interface materials (TIMs) must provide efficient heat transport in the through-plane direction. We report on the enhanced thermal conduction of $Al_2O_3-based$ polymer composites, fabricated by the surface wetting and texturing of thermally conductive hexagonal boron nitride(h-BN) nanoplatelets with large anisotropy in morphology and physical properties. The thermally conductive polymer composites were prepared with hybrid fillers of $Al_2O_3$ macro beads and surface modified h-BN nanoplatelets. Hexagonal boron nitride (h-BN) has high thermal conductivity and is one of the most suitable materials for thermally conductive polymer composites, which protect electronic devices by efficient heat dissipation. In this study, we synthesized hexagonal boron nitride nanoparticles by the pyrolysis of cost effective precursors, boric acid and melamine. Through pyrolysis at $900^{\circ}C$ and subsequent annealing at $1500^{\circ}C$, hexagonal boron nitride nanoparticles with diameters of ca. 50nm were synthesized. We demonstrate that the addition of a small amount of calcium fluoride ($CaF_2$) during the preparation of the melamine borate adduct significantly enhanced the crystallinity of the h-BN and assisted the growth of nanoplatelets up to 100nm in diameters. The addition of a small amount of h-BN enhanced the thermal conductivity of the $Al_2O_3-based$ polymer composites, from 1.45W/mK to 2.33 W/mK.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.4
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• pp.145-150
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• 2007

The $SiO_2$ and $TiO_2$ thin films for the multilayer interference filter application were manufactured by electron beam process. In case of electron beam process with ion source, the anode current was controlled by gas volume ratio of $O_2$ and Ar. Substrate temperature of electron beam deposition without ion source was increased from 100 to $250^{\circ}C$ with $50^{\circ}C$ increment. The surface roughness values of $SiO_2$ thin films was most low value at $200^{\circ}C$ substrate temperature and 0.2 A anode current respectively. And the surface roughness values of $TiO_2$ thin films was most low value at room temperature and 0.2 A anode current repectively. The refractive index of $SiO_2$ and $TiO_2$ thin films to be deposited with ion source was usually lower than that of thin films without ion source.