• Korean Journal of Metals and Materials
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• v.50 no.4
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• pp.293-299
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• 2012

Ultrafine-grained or nanostructured alloys usually lack the strain hardening capability needed to sustain uniform tensile deformation under high stresses. To circumvent this problem, we fabricated the Cu-based composite reinforced with the 3-dimensionally interconnected $Cu_5Zr$ phase using the combined technique of rapid quenching and subsequent hot-rolling. The alloy exhibited a tensile ductility of ~2.5% together with a strength of 1.57 GPa, which exceeds the values of most commercially available Cu-Be alloys. In this study, we elucidated the structural origin of the high strength and tensile ductility of the developed alloy by examining the thermal stability of the $Cu_5Zr$ reinforcing phase and the energy (work) absorption capability of the Cu matrix.

• Journal of the Korean Magnetics Society
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• v.5 no.6
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• pp.963-967
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• 1995

Ultra thin layers of NiFeCo or NiFe were inserted at the interfaces of Ni and Cu to form a multilayer structure. In case of inserting a NiFe layer, the magnetoresistance was about 6%, the saturation magnetic field was 50 Oe and the hysteresis of R-H (resistance-magnetic field) was very small. In case of inserting a NiFeCo layer, the magnetoresistance increased to about 7% but the saturation magnetic field and hysteresis were also increased. The increase of the output under biased magnetic field was much larger in case of inserting a NiFe layer because of relatively smaller hysteresis in R-H behavior.

• Journal of Sensor Science and Technology
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• v.31 no.1
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• pp.31-35
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• 2022

The efficacy improvement of the light emitting diode (LED) was studied for the realization of small-size, low power consumption, and highly sensitive bio-sensor instrument. The performance of the LED with Mg delta-doping at the interface of AlGaN/GaN super-lattice in p type cladding layer was simulated. The device with Mg delta-doping showed improved current, radiative recombination rate, electroluminescence, and light output power compared to the conventional LED structure. Under the bias condition of 5 V, the improved device exhibited 20.8% increase in the light output power. This is attributed to the increment of hole concentration from stable ionization of Mg in p type cladding layer. This result is expected to be used for the miniaturization, power saving, and sensitivity improvement of the bio-sensor system.

• Journal of the Korean Magnetics Society
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• v.2 no.3
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• pp.251-256
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• 1992

Artificial superlattices of Co/Pd were prepared by RF magnetron sputtering Multilayered structure and compositional modulation were analyzed with a side angle x-ray diffractometer. It has been found that expansion of Co lattice occured in this artificial superlattice due to the lattice mismatch between Co and Pd. Perpendicular magnetic anisotropy could be observed when the Co layer thickness became less than 8${\AA}$ and maximum coercivity of 2350 Oe could be obtained in [Co(2.5 ${\AA}$)/Pd(9.3 ${\AA})]_{50}$/Pd$(200\;{\AA})$ with a perfect squareness of magnetic hysteresis loop. Characteristic of perpendicular magnetic anisotropy in Co/Pd superlattices could be related to the expansion of Co lattice caused by Pd layer and it turned out that as the thickness of Pd layer increased, perpendicular magnetic anisotropy increased. The interface anisotropy energy and volume anisotropy energy were calculated to be 0.29 ergs/$cm^2$ and -$6.9{\times}10^6$ ergs/$cm^3$ respectively, which are consistent with the values reported elsewhere.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.242-242
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• 2016

Magnetite, Fe3O4, is a ferrimagnet with a cubic inverse spinel structure and exhibits a metal-insulator, Verwey, transition at about 120 K.[1] It is predicted to possess as half-metallic nature, 100% spin polarization, and high Curie temperature (850 K). Cobalt ferrite is one of the most important members of the ferrite family, which is characterized by its high coercivity, moderate magnetization and very high magnetocrystalline anisotropy. It has been reported that the CoFe2O4/Fe3O4 bilayers represent an unusual exchange-coupled system whose properties are due to the nature of the oxide-oxide super-exchange interactions at the interface [2]. In order to evaluate the effect of interface interactions on magnetic and transport properties of ferrite and cobalt ferrite, the CoFe2O4/Fe3O4 superlattices on MgO (100) substrate have been fabricated by molecular beam epitaxy (MBE) with the wave lengths of 50, and $200{\AA}$, called $25{\AA}/25{\AA}$ and $100{\AA}/100{\AA}$, respectively. Streaky RHEED patterns in sample $25{\AA}/25{\AA}$ indicate a very smooth surface and interface between layers. HR-TEM image show the good crystalline of sample $25{\AA}/25{\AA}$. Interestingly, magnetization curves showed a strong antiferromagnetic order, which was formed at the interfaces.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.704-709
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• 1994

The $(LaS)_xCrS_2(x \approx 1.20$) of the incommensurate misfit layer was systhesized from reactant mixture of$La_S_3$,Cr and S at 1273K. Powder X-ray diffration of $(LaS)_xCrS_2(x \approx 1.20$) was indexed as a complex structure consisted with a monoclinic LaS-sublattice, a triclinic $CrS_{2}$-sublattice and their superlattice. The temperature dependence of sublattice dimension was investigated by the X-ray diffraction analysis at low temperature. The magnetic susceptibility of $(LaS)_xCrS_2(x \approx 1.20$) was measured between 77K and room temperature using a Faraday balance method. $(LaS)_xCrS_2(x \approx 1.20$) was paramagnetic on a $\sigma$-H plot at room temperature. The observed effective magnetic moment( p dr) was in fair agreement with the value calculated by spin-only contribution for $Cr^{3+}$ and spin and orbital contribution for $La^{3+}$.

• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.190-194
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• 2008

Epitaxial $L1_0$ FePd (001) thin films were successfully manufactured by sputtering deposition method. The structure and magnetic properties of FePd thin films were characterized as a function of Fe compositions. It was found that the long-range ordering parameter had a maximum for the stoichiometric composition, whereas the magnetic anisotropy had a maximum as the Fe content is decreased to slightly above the stoichiometric composition. This indicates that the stoichiometry is directly contributed to the chemical ordering and the magnetic anisotropy. These results imply that nonstoichiometric FePd compositions, with a slight excess of Pd, may in fact be preferred for applications that require high magnetic anisotropy.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.508-508
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• 1996

;The growth of films have considerable interest in the field of superlattice structured multi-layer epitaxy led to realization of new devices concepts. Molecular beam epitaxy (MBE) with in situ observation by reflection high-energy electron diffraction (RHEED) is a key technology for controlled layered growth on the atomic scale in oxide crystal thin films. Also, the combination of radical oxygen source and MBE will certainly accelerate the progress of applications of oxides. In this study, the growth process of single crystal films using by MBE method is discussed taking the oxide materials of Bi-Sr-Ca-Cu family. Oxidation was provided by a flux density of activated oxygen (oxygen radicals) from an rf-excited discharge. Generation of oxygen radicals is obtained in a specially designed radical sources with different types (coil and electrode types). Molecular oxygen was introduced into a quartz tube through a variable leak valve with mass flowmeter. Corresponding to the oxygen flow rate, the pressure of the system ranged from $1{\;}{\times}{\;}10^{-6}{\;}Torr{\;}to{\;}5{\;}{\times}{\;}10^{-5}$ Torr. The base pressure was $1{\;}{\times}{\;}10^{-10}$ Torr. The growth of Bi-oxides was achieved by coevaporation of metal elements and oxygen. In this way a Bi-oxide multilayer structure was prepared on a basal-plane MgO or $SrTiO_3$ substrate. The grown films compiled using RHEED patterns during and after the growth. Futher, the exact observation of oxygen radicals with MBE is an important technology for a approach of growth conditions on stoichiometry and perfection on the atomic scale in oxide. The oxidization degree, which is determined and controlled by the number of activated oxygen when using radical sources of two types, are utilized by voltage locked loop (VLL) method. Coil type is suitable for oxygen radical source than electrode type. The relationship between the flux of oxygen radical and the rf power or oxygen partial pressure estimated. The flux of radicals increases as the rf power increases, and indicates to the frequency change having the the value of about $2{\times}10^{14}{\;}atoms{\;}{\cdots}{\;}cm^{-2}{\;}{\cdots}{\;}S^{-I}$ when the oxygen flow rate of 2.0 seem and rf power 150 W.150 W.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.3
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• pp.155-161
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• 2009

An investigation of the deformation behavior of ${\gamma}'-Ni_3Al$ single crystals containing fine dispersion of disordered ${\gamma}$ particles was performed for several different crystal orientations. Deformation structures were observed by the weak-beam method of transmission electron microscopy (TEM). The critical resolved shear stress (CRSS) for (111) [$\bar{1}$01] slie. increases with increasing temperature in the temperature range where (111) slip operates. The CRSS for (111) [$\bar{1}$01] slip is dependent on crystal orientation in the corresponding temperature range. The temperature where the strenjlth reaches a maximum is dependent on crystal orientation; the higher the ratio of the Schmid factors of (010) [$\bar{1}$01] to that of (111) [$\bar{1}$01], the higher the peak temperature. The peak temperatures were increased by the precipitation of y particles for the samples of all orientations. Electron microscopy of deformation induced dislocation arrangements under peak temperature has revealed that most of dislocations are straight screw dislocations. The mobility of screw dislocations decreases with increasing temperature. Above the peak temperature, dislocations begin to cross slip from the (111) [$\bar{1}$01] slip system to the (010) [$\bar{1}$01] slip system, thus decreasing the strength.

• Korean Journal of Materials Research
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• v.12 no.4
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• pp.296-303
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• 2002

For potential application to quantum mechanical devices, nano-composite thin films, consisting of GaAs quantum dots dispersed in SiO$_2$ glass matrix, were fabricated and studied in terms of structural, chemical, and optical properties. In order to form crystalline GaAs quantum dots at room temperature, uniformly dispersed in $SiO_2$matrix, the composite films were made to consist of alternating layers of GaAs and $SiO_2$in the manner of a superlattice using RF magnetron sputter deposition. Among different film samples, nominal thickness of an individual GaAs layer was varied with a total GaAs volume fraction fixed. From images of High Resolution Transmission Electron Microscopy (HRTEM), the formation of GaAs quantum dots on SiO$_2$was shown to depend on GaAs nominal thickness. GaAs deposits were crystalline and GaAs compound-like chemically according to HRTEM and XPS analysis, respectively. From measurement of optical absorbance using a spectrophotometer, absorption edges were determined and compared among composite films of varying GaAs nominal thicknesses. A progressively larger shift of absorption edge was noticed toward a blue wavelength with decreasing GaAs nominal thickness, i.e. quantum dots size. Band gaps of the composite films were also determined from Tauc plots as well as from PL measurements, displaying a linear decrease with increasing GaAs nominal thickness.