• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.6
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• pp.85-90
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• 2013

In this paper, 6bit SAR ADC tolerant to ionizing radiation is presented. Radiation tolerance is achieved by using the Dummy Gate Assisted (DGA) MOSFET which was proposed to suppress the leakage current induced by ionizing radiation and its comparing sample is designed with the conventional MOSFET. The designed ADC consists of binary capacitor DAC, dynamic latch comparator, and digital logic and was fabricated using a standard 0.35um CMOS process. Irradiation was performed by Co-60 gamma ray. After the irradiation, ADC designed with the conventional MOSFET did not operate properly. On the contrary, ADC designed with the DGA MOSFET showed a little parametric degradation of which DNL was increased from 0.7LSB to 2.0LSB and INL was increased from 1.8LSB to 3.2LSB. In spite of its parametric degradation, analog to digital conversion in the ADC with DGA MOSFET was found to be possible.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.760-770
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• 2016

A 12-bit 750 kS/s Dual-Sampling Successive Approximation Register Analog-to-Digital Converter (SAR ADC) technique with reduced Capacitive DAC (CDAC) is presented in this paper. By adopting the Adaptive Power Control (APC) technique for the two-stage latched type comparator and using bootstrap switch, power consumption can be reduced and overall system efficiency can be optimized. Bootstrapped switches also are used to enhance the sampling linearity at a high input frequency. The proposed SAR ADC reduces the average switching energy compared with conventional SAR ADC by adopting reduced the Most Significant Bit (MSB) cycling step with Dual-Sampling of the analog signal. This technique holds the signal at both comparator input asymmetrically in sample mode. Therefore, the MSB can be calculated without consuming any switching energy. The prototype SAR ADC was implemented in $0.18-{\mu}m$ CMOS technology and occupies $0.728mm^2$. The measurement results show the proposed ADC achieves an Effective Number-of-Bits (ENOB) of 10.73 at a sampling frequency of 750 kS/s and clock frequency of 25 MHz. It consumes only 0.13 mW from a 5.0-V supply and achieves the INL and DNL of +2.78/-2.45 LSB and +0.36/-0.73 LSB respectively, SINAD of 66.35 dB, and a Figures-of-Merit (FoM) of a 102 fJ/conversion-step.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.4
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• pp.613-618
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• 2015

This paper proposed a low power CMOS Flash-SAR A/D converter which consists of a Flash A/D converter for 2 most significant bits and a SAR A/D converter with capacitor D/A converter for 8 least significant bits. Employment of a Flash A/D converter allows the proposed circuit to enhance the conversion speed. The SAR A/D converter with capacitor D/A converter provides a low power dissipation. The proposed A/D converter consumes $136{\mu}W$ with a power supply of 1V under a $0.18{\mu}m$ CMOS process and achieves 9.16 effective number of bits for sampling frequency up to 2MHz. Therefore it results in 120fJ/step of Figure of Merit (FoM).

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.274-286
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• 2016

This paper presents a 4-channel multi-rate vertical-cavity surface-emitting laser (VCSEL) driver. In order to keep the output power constant with respect to the process, voltage, temperature (PVT) variations, this research proposes automatic power and magnitude. For the fast settling time, the high-speed 10-bit time-interleaved Flash-successive approximation analog to digital converter (Flash-SAR ADC) is proposed and shared for automatic power and magnitude calibration to reduce the die area and power consumption. This chip is fabricated using $0.13-{\mu}m$ CMOS technology and the die area is $4.2mm^2$. The power consumption is 117.84 mW per channel from a 3.3 V supply voltage at 10 Gbps. The measured resolution of bias /modulation current for APC/AMC is 0.015 mA.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.861-862
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• 2015

In this paper we present a low area 12-bit SAR ADC (Successive Approximation Register Analog-to-Digital Converter). The proposed circuit is fabricated using Magnachip/SK Hynix 1-Poly 6-Metal $0.18-{\mu}m$ CMOS process, and it is powered by a 1.8-V supply. Total chip area is reduced by replacing the MIM capacitors with MOS capacitors instead of the capacitors consisting of overall part in chip area. The proposed circuit showed improved power dissipation of 1.9mW, and chip area of $0.45mm^2$ as compared to conventional research results at the power supply of 1.8V. The designed circuit also showed high SNDR (Signal-to-Noise Distortion Ratio) of 70.51dB, and excellent effective number of bits of 11.4bits.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.2
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• pp.47-52
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• 2017

In this paper, CMOS SAR A/D converter 1.8V supply for the design of an A/D converter having an middle speed for the biological signal processing was designed. This paper proposes design of a 10-bit SAR Analog to Digital Converter improving linearity driven by MSB node of C-DAC array divided into 4 equal parts. It enhances linearity property, by retaining the analog input signal charging time at MSB node. Because MSB node samples analog input, it enhances resolution through getting initial input signal precisely. By using split capacitor on C-DAC array, it reduced chip size and power dissipation. The Proposed SAR A/D Converter is fabricated in 0.18um CMOS and measured 7.5 bits of ENOB at sampling frequency 4MS/s and power supply of 1.8V. It occupies a core area of $850{\times}650um^2$ and consumes 123.105uW. Therefore it results in 170.016fJ/step of FOM(Figure of Merit).

• Journal of IKEEE
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• v.24 no.4
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• pp.1058-1063
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• 2020

This paper proposes a 12-bit SAR A/D(Successive Approximation Register Analog-to-Digital) converter that operates at low power for bio-signal and sensor signal processing. The conventional SAR A/D converter utilized the reduction of the dynamic current, which resulted in reducing total power consumption. In order to solve the limitation of the sampling time due to charging/discharging of the capacitor for reducing dynamic current, the different sampling time on the C-DAC bit switch operation was applied to reduce the dynamic current. In addition, lowering the supply voltage of the digital block to 0.6V led to 70% reduction of the total power consumption of the proposed ADC. The proposed SAR A/D was implemented with CMOS 65nm process 1-poly 6-metal, operates with a supply voltage of 1.2V. The simulation results demonstrate that ENOB, DNL/INL, power consumption and FoM are 10.4 bits, ±0.5LSB./±1.2LSB, 31.2uW and 2.8fJ/step, respectively.

• Steel and Composite Structures
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• v.52 no.3
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• pp.377-390
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• 2024

Analyzing thermoelastic, elastoplastic, and residual stresses is pivotal for deepening our insights into material characteristics, particularly in the engineering of advanced materials like functionally graded materials (FGM). This research delves into these stress types within a thick-walled sphere composed of Al-SiC FGM, employing a detailed successive approximation method (SAM) to pinpoint stress distributions under varied loading scenarios. Our investigation centers on how the sphere's structure responds to different magnitudes of internal pressure. We discover that under various states-thermoelastic, elastoplastic, and residual-the radial stresses are adversely impacted, manifesting negative values due to the compressive nature induced by internal pressures. Notably, the occurrence of reverse yielding, observed at pressures above 410 MPa, merits attention due to its significant implications on the sphere's structural integrity and operational efficacy. Employing the SAM allows us to methodically explore the nuanced shifts in material properties across the sphere's thickness. This study not only highlights the critical behaviors of Al-SiC FGM spheres under stress but also emphasizes the need to consider reverse yielding phenomena to maintain safety and reliability in their application. We advocate for ongoing refinement of analytical techniques to further our understanding of stress behaviors in various FGM configurations, which could drive the optimized design and practical application of these innovative materials in diverse engineering fields.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.9
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• pp.31-39
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• 2011

In this paper, we propose a signal readout system with small area and low power consumption for CNT sensor arrays. The proposed system consists of signal readout circuitry, a digital controller, and UART I/O. The key components of the signal readout circuitry are 64 transimpedance amplifiers (TIA) and SAR-ADC with 11-bit resolution. The TIA adopts an active input current mirror (AICM) for voltage biasing and current amplification of a sensor. The proposed architecture can reduce area and power without sampling rate degradation because the 64 TIAs share a variable gain amplifier (VGA) which needs large area and high power due to resistive feedback. In addition, the SAR-ADC is designed for low power with modified algorithm where the operation of the lower bits can be skipped according to an input voltage level. The operation of ADC is controlled by a digital controller based on UART protocol. The data of ADC can be monitored on a computer terminal. The signal readout circuitry was designed with 0.13${\mu}m$ CMOS technology. It occupies the area of 0.173 $mm^2$ and consumes 77.06${\mu}W$ at the conversion rate of 640 samples/s. According to measurement, the linearity error is under 5.3% in the input sensing current range of 10nA - 10${\mu}A$. The UART I/O and the digital controller were designed with 0.18${\mu}m$ CMOS technology and their area is 0.251 $mm^2$.

• Journal of IKEEE
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• v.23 no.1
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• pp.35-43
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• 2019

A capacitor self-calibration is proposed to improve the linearity of the capacitor digital-to-analog converter (CDAC) for an asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) with 10-bit resolution. The proposed capacitor self-calibration is performed so that the value of each capacitor of the upper 5 bits of the 10-bit CDAC is equal to the sum of the values of the lower capacitors. According to the behavioral simulation results, the proposed capacitor self-calibration improves the performances of differential nonlinearity (DNL) and integral nonlinearity (INL) from -0.810/+0.194 LSBs and -0.832/+0.832 LSBs to -0.235/+0.178 LSBs and -0.227/+0.227 LSBs, respectively, when the maximum capacitor mismatch of the CDAC is 4%. The proposed 10-bit 20-MS/s asynchronous SAR ADC is implemented using a 110-nm CMOS process with supply of 1.2 V. The area and power consumption of the proposed asynchronous SAR ADC are $0.205mm^2$ and 1.25 mW, respectively. The proposed asynchronous SAR ADC with the capacitor calibration has a effective number of bits (ENOBs) of 9.194 bits at a sampling rate of 20 MS/s about a $2.4-V_{PP}$ differential analog input with a frequency of 96.13 kHz.