• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.97-101
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• 1992

Cordierite glass ceramic has become an electronic substrate material for electronic circuits and the use of whiskers for improving strength and toughness is evident. Green sheets of mixtures containing 15% silicon nitride were sintered to greater than 99 % density. The microstructure was analysed using optical microscopy, scanning electron microscopy (SEM), and X-ray diffraction (XRD). The toughness and hardness were improved with increasing the whisker vol. % and sintering temperature. Especially, it is assumed that toughening increasing at the more high sintering temperature relevants to the glass phase increasing, as showned in the roughness of the fracture surfaces. It was directionally dependent of whisker direction during processing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.39-40
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• 2005

Ferroelectric Eu-substituted $Bi_4Ti_3O_{12}$ (BET) thin films with a thickness of 200 nm were deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrate by means of the liquid delivery MOCVD system and annealed at several temperatures in an oxygen atmosphere. At annealing temperature above $600^{\circ}C$, the microstructure of layered perovskite phase was observed. The remanent polarization of these films increased with increase in annealing temperature. The remanent polarization values ($2P_r$) of the BET thin films annealed at $720^{\circ}C$ were $37.71{\mu}C/cm^2$ at an applied voltage of 5 V.

• 대한금속재료학회지
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• 제48권2호
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• pp.141-147
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• 2010

An Ni-Al intermetallic coating has been produced by induction heating on mild steel. The effect of the induction heating conditions on the microstructure of the coating has been investigated. The reaction synthesis of the intermetallic compounds was promoted while increasing the heating rate and the holding time at reaction temperature. Especially, an NiAl phase corresponding to the initial composition of mixed powder was predominantly formed. However, the synthesis at low reaction temperatures occurred by solid state diffusion during the holding time and an Fe-Al reaction layer was formed at the interface with the substrate, regardless of the heating rate. The combustion synthesis of the intermetallic compound occurred at a temperature higher than 1023 K and resulted in an almost single phase NiAl structure.

• 한국자기학회지
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• 제3권4호
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• pp.320-324
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• 1993

스퍼터된 자기기록매체 Co-10at%Cr-2at%Mo/Cr 자성박막의 제조조건이 미세구조와 자기적특성에 미치는 영향을 조사하였다. 기판의 온도는 상온-$250^{\circ}C$로 하였으며 Cr하지층과 CoCrMo층의 두께는 각각 $1000-2500\AA$, $300-800\AA$이었다. CoCrMo층의 두께가 $500{\AA}-800{\AA}$ 증가함에 따라 결정립은 미세화 되었으며 균일한 조직을 나타냈다. 보자력은 기판의 온도, CoCrMo자성층, Cr하지층의 두께 를 증가시켰을때 향상되었다. 기판온도가 $250^{\circ}C$, 자성층의 두께가 $700\AA$, Cr 하지층의 두께가 $1000\AA$일때 880 Oe의 보자력을 나타냈다.

• 소성∙가공
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• 제25권6호
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• pp.353-358
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• 2016

Direct energy deposition (DED) is an additive manufacturing technique that involves the melting of metal powder with a high-powered laser beam and is used to build a variety of components. In recent year, it can be widely used in order to produce hard, wear resistant and/or corrosion resistant surface layers of metallic mechanical parts, such as dies and molds. For the purpose of the hardfacing to achieve high wear resistance and hardness, application of high speed steel (HSS) can be expected to improve the tool life. During the DED process using the high-carbon steel, however, defects (delamination or cracking) can be induced by rapid solidification of the molten powder. Thus, substrate preheating is generally adopted to reduce the deposition defect. While the substrate preheating ensures defect-free deposition, it is important to select the optimal preheating temperature since it also affects the microstructure evolution and mechanical properties. In this study, AISI M4 powder was deposited on the AISI 1045 substrate preheated at different temperatures (room temperature to $500^{\circ}C$). In addition, the micro-hardness distribution, cooling rates, and microstructures of the deposited layers were investigated in order to observe the influence of the substrate preheating on the mechanical and metallurgical properties.

• 대한금속재료학회지
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• 제48권7호
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• pp.660-666
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• 2010

30 nm thick Ni layers were deposited on a glass substrate by e-beam evaporation. Subsequently, 30 nm or 60 nm ${\alpha}-Si:H$ layers were grown at low temperatures ($<220^{\circ}C$) on the 30 nm Ni/Glass substrate by catalytic CVD (chemical vapor deposition). The sheet resistance, phase, microstructure, depth profile and surface roughness of the $\alpha-Si:H$ layers were examined using a four-point probe, HRXRD (high resolution Xray diffraction), Raman Spectroscopy, FE-SEM (field emission-scanning electron microscopy), TEM (transmission electron microscope) and AES depth profiler. The Ni layers reacted with Si to form NiSi layers with a low sheet resistance of $10{\Omega}/{\Box}$. The crystallinty of the $\alpha-Si:H$ layers on NiSi was up to 60% according to Raman spectroscopy. These results show that both nano-scale NiSi layers and crystalline Si layers can be formed simultaneously on a Ni deposited glass substrate using the proposed low temperature catalytic CVD process.

• 한국재료학회지
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• 제31권11호
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• pp.608-613
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• 2021

This study investigated the reaction between clay and Mn. Mn was coated using a manganese sulfate on porcelain plate and sintered from 1,100 ℃ to 1,250 ℃. The body begin to shrink around 950 ℃ with the increase in temperature and rapidly progressed after 1,100 ℃. Shrinkage of celadon body was performed at a lower temperature than for other substrates. Quartz, kaolin, and feldspar were the main crystalline phases of the starting materials, but they became mullite and crystobalite during the firing process, and some formed amorphous glass. When manganese sulfate was applied and fired, manganese oxide was fused, and some manganese oxide reacted with the substrate to show a dense microstructure different from that of the substrate; the substrate had pores. The manganese coated porcelain fired at 1,200 ℃ had L^* values of 55.25, 36.87, and 37.13 for the white ware, celadon body, and white mixed ware, respectively; with a^* values of 4.63, 3.07, and 2.15, and b^* values of 7.93 and 3.98, it was found to be 3.42. This result indicated that the color of the surface was affected during firing by the chemical reaction between the substrate and manganese.

• 한국표면공학회지
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• 제35권4호
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• pp.211-217
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• 2002

Ti-Si-N films were deposited onto WC-Co substrate by a RF-PECVD technique. The deposition behaviors of Ti-Si-N films were investigated by varying the deposition temperature, RF power, and reaction gas ratio (Mx). Ti-Si-N films deposited at 500, 180W, and Mx 60% had a maximum hardness value of 38GPa. The microstructure of films with a maximum hardness was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase by HRTEM analyses. The microstructure of maximum hardness with Si content (10 at.%) was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase, but to have partly aligned structure of TiN and some inhomogeniety in distribution. and At above 10 at.% Si content, TiN crystallite became finer and more isotropic also thickness of amorphous silicon nitride phase increased at microstructure.

• 한국표면공학회지
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• 제36권1호
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• pp.1-8
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• 2003

In general, the microstructure in thin films was known to evolve in similar manner according to the energy striking the condensing film at similar homologous temperature, Th for the materials of the same crystal structure. The fundamental factors affecting particle energy are a function of processing parameters such as working pressure, bias voltage, target/sputtering gas mass ratio, cathode shape, and substrate orientation. In this study, Al, Cu, Pt films of the same crystal structure of face centered cubic (FCC) have been prepared under various processing parameters. The influence of processing variables on the microstructures and residual stress states in the films has been studied.

• 대한금속재료학회지
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• 제46권11호
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.