• 한국세라믹학회지
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• 제31권4호
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• pp.381-388
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• 1994

A new process which co-fires the low-firing-substrate and copper conductor was studied to achieve good bond strength and low sheet resistance of conductor. Cupric oxide is used as the precursor of conductive material in the new method and the firing atmosphere of the new process is changed sequently in air H2N2. The addition of cupric oxide and variations of firing atmosphere permited complete binder-burnout in comparison with the conventional method and contributed to the improvement of resistance and bonding behaviors. The potimum conditions of this experiment to obtain the satisfactory resistance and bond strength are as follows (binder-burnout temperature in air; 55$0^{\circ}C$, reducing temperature in H2; 40$0^{\circ}C$ for 30 min, ratio of copper and cupric oxide; 60:40~30:70 wt%). The bonding mechanism between the substrate and metal was explained by metal diffusion layer in the interface and the bond strength mainly depended on the stress caused by the difference of shrinkage and thermal expansion coefficient between the substrate and metal.

• 마이크로전자및패키징학회지
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• 제24권3호
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• pp.27-34
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• 2017

Polydimethylsiloxane (PDMS) 신축기판과 Au 박막 사이의 중간층으로서 parylene F의 적용 가능성을 분석하고, Au 박막의 스퍼터링 중에 발생하는 PDMS 기판의 swelling이 Au 박막의 신축변형-저항 특성에 미치는 영향을 분석하였다. Parylene F 중간층 없이 PDMS 기판에 스퍼터링한 150 nm 두께의 Au 박막은 $11.7{\Omega}$의 초기저항을 나타내었으며, 12.5%의 인장변형률에서 저항의 overflow가 발생하였다. 반면에 150 nm 두께의 parylene F 중간층을 갖는 Au 박막의 초기저항은 $1.21{\Omega}$이었으며 30% 인장변형률에서 저항이 $246{\Omega}$으로 저항증가비가 현저히 낮아졌다. PDMS 기판의 swelling이 발생함에 따라 30% 인장변형률에서 Au 박막의 저항이 $14.4{\Omega}$으로 크게 저하되었다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.268-271
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• 2005

Etch resistance of mask layer on silicon substrate modified by AFM-based Tribo-Nanolithography (TNL) in Aqueous Solution in an aqueous solution was demonstrated. n consists or sequential processes, nano-scratching and wet chemical etching. The simple scratching can form a mask layer on the silicon substrate, which acting as an etching mask. For TNL, a specially designed cantilever with diamond tip, allowing the formation of mask layer on silicon substrate easily by a simple scratching process, has been applied instead of conventional silicon cantilever fur scanning. This study demonstrates how the TNL parameters can affect the etch resistance of mask layer, hence introducing a new process of AFM-based maskless nanolithography in aqueous solution.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.161-164
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• 2002

This paper presents an 1-D substrate resistance value expression and compares the measured wave-form data with the calculated 1-D resistance network model. The remaining part is devoted to the effectiveness of guard ring varying its width and number.

• 한국표면공학회지
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• 제32권1호
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• pp.67-77
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• 1999

The Ni base superalloy Mar-M247 substrate was aluminized or aluminized after boronizing by the pack cementation under Ar atmosphere. The hot corrosion resistance and after-heat-treatment effect of aluminized specimens were studied by the cyclic hot corrosion test in $Na_2SO_4$-NaCl molten salt. XRD analysis showed that the $Ni_2Al_3$ phase was formed between the coated layer and substrate below 1273K but the NiAl phase above 1273K. The peak of the NiAl phase was developed after heat treatment. Corrosion test showed that corrosion resistance of the specimen with the NiAl phase was better than that with the $Ni_2Al_3$ phase. Corrosion resistance could be improved by heat treatment to form ductile NiAl phase, where cracks were not formed by thermal shock on coating layer. Moreover, it appeared that heat treatment played a role to improve corrosion resistance of Al diffusion coating above 1273K. The existence of boron in the Al diffusion coating layer obstructed outwared diffusion of Cr from the substrate, and it influenced on corrosion resistance of the coating layer by weakening adherence of the oxide scale.

• 마이크로전자및패키징학회지
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• 제26권4호
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• pp.47-53
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• 2019

Polydimethylsiloxane (PDMS)를 베이스 기판으로 사용하고 이보다 강성도가 높은 polytetrafluoroethylene(PTFE)를 island 기판으로 사용한 soft PDMS/hard PDMS/PTFE 구조의 강성도 경사형 신축 패키지를 형성하고, 이의 신축변형에 따른 저항특성을 분석하였다. PDMS/PTFE 기판패드에 50 ㎛ 직경의 칩 범프들을 anisotropic conductive paste를 사용하여 실장한 플립칩 접속부는 96 mΩ의 평균 접속저항을 나타내었다. Soft PDMS/hard PDMS/PTFE 구조의 신축 패키지를 30% 변형률로 인장시 PTFE의 변형률이 1%로 억제되었으며, PTFE 기판에 형성한 회로저항의 중가는 1%로 무시할 정도였다. 0~30% 범위의 신축변형 싸이클을 2,500회 반복시 회로저항이 1.7% 증가하였다.

• 마이크로전자및패키징학회지
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• 제19권4호
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• pp.19-23
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• 2012

최근 발광다이오드(LED)의 출력 성능을 높이고, 전력 소비를 줄이기 위해 LED 패키지 분야에서 실리콘 기판 연구가 집중되고 있다. 본 연구에서는 공정 비용이 낮고 생산성이 높은 습식 식각을 이용하여 실리콘 기판의 실리콘 관통 비아 식각 공정을 살펴보았다. KOH를 이용한 양면 습식 식각 공정과 습식 식각과 건식 식각을 병행한 두 가지 공정 방법으로 실리콘 관통 비아를 제작하였고, 식각된 실리콘 관통 비아에 Cu 전극과 배선은 전기도금으로 증착하였다. Cu 전극을 연결하는 배선의 전기저항은 약 $5.5{\Omega}$ 정도로 낮게 나타났고, 실리콘 기판의 열 저항은 4 K/W으로 AlN 세라믹 기판과 비슷한 결과를 보였다.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2013년도 춘계 학술논문 발표대회
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• pp.329-331
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• 2013

The salt damage resistance of waterproofing membrane was evaluated on the cracked mortar substrate. The types of specimens are urethane, acrylic waterproofing membrane, and no coating mortar substrate. After these specimens were cured by water curing for 4 weeks, they were cured by atmospheric curing at 20±2Co for 8 weeks. The salt water immersion test was carried out by following KS F 2737, and the penetration depth of chloride ion into substrate was measured in 1, 4, 8, and 13 weeks. As a result, in the case of non coating specimen, the chloride ion penetrated within one week. In the coated specimens, a regardless of the membrane type, the chloride ion did not penetrate during 13 weeks-tests on condition that the cracked width of substrate is less than 0.3mm. Also, the penetration speeds of the coated specimens were lower than that of non coating specimen. Therefore, our results reached a conclusion that waterproofing membrane has high salt damage resistance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.126-127
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• 2008

The effects annealing conditions on the electrical conductions of SOI substrate were studied. The reversible change of resistance and carrier concentration in accordance with the annealing temperature were observed for the first time in SOI substrate. The thermal donors due to interstitial oxygen atoms contribute the change of resistance and carrier concentration. Final1y, we show that the furnace annelaing at $500^{\circ}C$ at final heat treatment stage is effective for eliminate the thermal donor effects in SOI substrate.

• 한국식품영양과학회지
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• 제23권2호
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• pp.293-297
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• 1994

The effect of organic acids on growth and heat resistance of Listeria monocytogenes Scott A were investigated. The growth of L. monocytogenes was inhibited in Tryptic Soy Broth(TSB) with 0.1 or 0.2% of acetic , tartic , propionic , citric and lactic acid at 35$^{\circ}C$, respectively. The growth of l. Monocytogenes did not occur in TSB with 0.2% of acetic acid or propionic acid during 48h of incubation. The heat resistance of L.monocytogenes was affected by kind of organic acid, ph and heating substrate. L.monocytogenes showed more heat resistant in TSB with various organic acids than in 0.1M sodium phosphate with the same organic acids. Heat resistance decreased as pH of heating substrate decreased . Surface-adherent microcolony was more heat resistant than planktonic cell of L. monocytogenes. Propionic and lactic acids more affected on heat resistance of L.monocytogenes than acetic , tartaric and citric acids.