• Macromolecular Research
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• v.17 no.4
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• pp.227-231
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• 2009

New polyelectrolytes derived from poly(amide-sulfone)s and 1,5-dibromopentane were simultaneously fabricated on the electrode by the crosslinking reaction. The substrate was pretreated with a bromoalkyl-containing, silane-coupling agent to anchor the humidity-sensitive membrane to the substrate through the covalent bond. When the resistance dependence on the relative humidity of the crosslinked poly(amide-sulfone)s was measured, the resistance varied by three orders of magnitude between 20%RH and 90%RH, which was the required RH range for a humidity sensor operating at ambient humidity. Their water durability, long-term stabilities under various environments, hysteresis and response and recovery times were measured and evaluated as a humidity-sensing membrane.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.4
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• pp.585-589
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• 2012

The characteristics of interface layer and the effect of mole fraction of inlet gas mixture($B_2H_6/H_2/N_2/TiCl_4$) on the microstructure of Ti(B,N) films were studied by microwave plasma hot filament CVD process. Ti(B,N) films were deposited on a substrate(STD-61) to develop a high performance of resistance wear coating tool. Ti(B,N) films were obtained at a gas pressure of 1 torr, bias voltage of 300 V and substrate temperature of $480^{\circ}C$ in $B_2H_6/H_2/N_2/TiCl_4$gas system. It was found that TiN, $TiB_2$, TiB and hexagonal boron nitride(h-BN) phases exist in thin layer on the STD-61.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.98-106
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• 1996

A thin film of aluminum for ultra large scale integrated circuits metalization has been deposited on TiN and SiO$_{2}$ substrates by plasma assisted chemical vapor deposition using DMEAA (dimenthylethylamine alane) as a precursor. The effects of plasma on surface topology and growth characteristics were investigated. Thermal CVD Al could not be got continuous films on insulating subsrate such as SiO$_{2}$. However, it was found that Al films could be deposited on SiO$_{2}$ substate without any pretreatments by the hydrogen plasma for pyrolysis of DMEAA. Compared to the thermal CVD, PACVD films showed much better reflectance and resistance on TiN and SiO$_{2}$ substrate. We obtained mirror-like PACVD Al film of 90% reflectance and resistance on TiN and SiO$_{2}$ substrates. We obtained mirror-like PACVD Al film of 90% reflectance on TiN substrate. Excellent conformal step coverage was obtained on submicron contact holes ;by the PACVD blanket deposition.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.31-37
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• 1994

Aluminum films were deposited by the pyrolysis of triisobutylaluminum(TIBA) in a cold wall LPCVD system for the metallization of high level IC. the selectivity on Si/SiO2 substrate and the contact resistance on submicron contacts were investigated. The carbon free aluminum film could be obtained when the aluminum film was deposited at low substrate temperature. Contact resistances of CVD Al/n+ Si contacts whose contact size was 0.5 .mu.m werre as low as 20~40.OMEGA./ea, which is 30~50% of contact resistance obtained by sputtering technique.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.129-132
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• 2017

We report a chemical vapor deposition approach and optimized growth condition to the synthesis of single layer molybdenum disulfide ($MoS_2$). Obtaining large grain size with continuous $MoS_2$ atomically thin films is highly responsible to the growth distance between molybdenum trioxide source and receiving silicon substrate. Experimental results indicate that triangular shape $MoS_2$ grain size could be enlarged up to > 80um with the precisely controlled the source-to-substrate distance under 7.5 mm. Furthermore, we demonstrate fabrication of a memory device by employing poly(methyl methacrylate) (PMMA) as insulating layer. The fabricated devices have a PMMA-$MoS_2$/metal configuration and exhibit a bistable resistance switching behavior with high/low-current ratio around $10^3$.

• Macromolecular Research
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• v.13 no.3
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• pp.265-272
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• 2005

Polyelectrolyte membranes for humidity-sensing were fabricated using a layer-by-layer adsorption process based on the spontaneous self-assembly of alternating layers of cationic and anionic polymers on a silanized ITO patterned glass substrate. The substrate is dipped successively into dilute solutions of a polyanion and a polycation. The homopolymers and copoymers of diallyldimethylammonium chloride (DDA), allylamine hydrochloride (AA), 2-[(methacryloyloxy)ethyl]trimethyl ammonium chloride (METAC) and vinylbenzyl tributyl phosphonium chloride(VTBPC) were used as the polycations. In this experiment, it was found that the resistance varied according to the chemical structure of the polycation. The resistance varied from $10^7$ to $10^5$ $\Omega$, as the humidity was increased from 60 (relative humidity) to $95\%$RH, which is the range of RH values required for a dew sensor operating at high humidity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.216-220
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• 1994

Polycrystalline CdS films have been prepared by coating a slurry, which consisted of CdS, 11w% CdCl$_2$ and appropriate amount of propylene glycol, on glass substrate and glass substrate coated with indium tin oxide(ITO) followed by sintering in a nitrogen atmosphere. CdTe slurries consisting of Te powder and Cd powder were coated on the sintered CdS films and ITO/CdS films and were sintered in nitrogen to prepare sintered CdS/CdTe and ITO/CdS/CdTe solar cells. The value of fill factor increased due to low series resistance and open circuit voltage decreased due to low shunt resistance in the ITO/CdS/CdTe solar cells.

• Journal of the Korean institute of surface engineering
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• v.44 no.6
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• pp.233-238
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• 2011

The friction and wear characteristics of CrN and TiN coatings on SKD61 which is mold material using for extrusion of AZ80 magnesium alloy were investigated. The coatings were deposited by the arc ion-plating method, and the thickness were about $3.59{\mu}m$ and $3.28{\mu}m$, respectively. Reciprocating friction wear tests were conducted by varying pin load and temperature of counter substrate at un-lubricated condition. The pin loads were 11, 15 and 19 kgf, and the substrate temperatures were room temperature and $120^{\circ}C$. CrN coating which has a lower friction coefficient and a smaller adhesive wear with AZ80 magnesium alloy showed better wear resistance than TiN coating.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.344-349
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• 2014

$RuO_2$-based high frequency thick-film resistor paste was printed at the speed of 10, 100, 300 mm/sec on the AlN substrate, and then sintered at between 750 and $900^{\circ}C$. The sintered thick films were characterized in terms of printing and sintering conditions. With increasing printing speed, the thickness and roughness of sintered film increased. The resistance of the thick film resistor was reduced by increasing the printing speed from 10 to 100 mm/sec, but did not significantly change at 300 mm/sec speed. With increasing sintering temperature, the surface roughness and thickness of sintered resistor film decreased. The reduction rate was large in case of fast printed resistor. The resistance of the resistor increased up to $800^{\circ}C$ with sintering temperature, but again decreased at the higher sintering temperature.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.9
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• pp.743-751
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• 1991

This paper presents the 1.5\ulcorner PSA bipolar device which establishes the performance improvement such as the reduction of emitter resistance and substrate junction capacitance. To achieve the above electrical characteristics, RTA process and trench isolation technology were adapted. The emitter resistance and substrate capacitance of npn transistor having 1.5$[\times}6{\mu}m^{2}$emitter area was measured with 63$\Omega$and 28fF, respectively. The minimum propagation delay time shows 121ps at 0.7mW from the measurement of 31 stage ring oscillator.