• Title/Summary/Keyword: substrate resistance

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A Substrate Resistance and Guard-ring Modeling for Noise Analysis of Twin-well Non-epitaxial CMOS Substrate (Twin-well Non-epitaxial CMOS Substrate에서의 노이즈 분석을 위한 Substrate Resistance 및 Guard-ring 모델링)

  • Kim, Bong-Jin;Jung, Hae-Kang;Lee, Kyoung-Ho;Park, Hong-June
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.4
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    • pp.32-42
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    • 2007
  • The substrate resistance is modeled to estimate the performance degradation of analog circuits by substrate noise in a $0.35{\mu}m$ twin-well non-epitaxial CMOS process. The substrate resistance model equations are applied to the P+ guard-ring isolation structure and a good match was achieved between measurements and models. The substrate resistance is divided into four types and a semi-empirical model equation is obtained for each type of substrate resistance. The rms(root-mean-square) error of the substrate resistance model is below 10% compared with the measured resistance. To apply this substrate resistance model to the P+ guard ring structure, ADS(Advanced Design System) circuit simulation results are compared with the measurement results using Network Analyzer, and relatively good agreements are obtained between measurements and simulations.

INFLUENCE OF ROLLING LOADS BY CASTERS ON SEPARATION RESISTANCE OF SUBSTRATE CONCRETE AND SYNTHETIC RESIN FLOOR COATINGS (下地コンクリ-トと合成樹脂塗り床材の耐剝離性に及ぼす キャスタ一の走行荷重の影響)

  • Takamasa, Mikami;Choi, Soo-Kyung
    • Journal of the Korea Institute of Building Construction
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    • v.3 no.4
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    • pp.73-78
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    • 2003
  • In this Study, we examined the influence of characteristics of rolling loads by casters on separation resistance of substrate concrete and synthetic resin floor coating. In the experiment, we first prepared floor samples having substrate concrete of various compressive strength, surface hardness and surface configurations, then put the coated samples to the test of separation resistance with Rolling Caster Loading Machine. Three loading conditions consisted of different kinds of casters, rolling conditions, and coating materials. Consequently, we clarified that the grade of separation resistance varied widely according to the characteristics of substrate concrete and rolling loads.

A study on the effect of process parameters on the corrosion resistance of ion plated Tin films with Ti and Ni interlayers. (이온플레팅시 공정조건이 Ti 및 Ni 중간층을 갖는층을 갖는 TiN 박막의 내식성에 미치는 영향에 관한 연구)

  • 하희성;이종민;이인행;이정중
    • Journal of the Korean institute of surface engineering
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    • v.30 no.1
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    • pp.33-43
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    • 1997
  • The effects of process parameters substrate such as substrate current and substrate temperature on the corrosion resistance of ion plated TiN film were investigated. TiN fims were deposited on speed steel on which Ti or Ni hed been previously evaporated. Dense TiN films could be obtained under higher substrate current(1A) and substrate temperature($500^{\circ}C$), whereas TiN films deposited with lower substances current(0.5A) and substrate temperature($300^{\circ}C$) showed porous structure. The corrosion resistances of high speed steel was considerably increased when dense TiN films had been formed on it. The effect of Ti and Ni interlayer on the increase of the corrosion resistance was also significant with dense TiN films, while there was little effect of interlayer on the corrosion resistance when TiN films were porous. the effect of interlayer on the corrosion resistance was more outstanding with Ti then with Ni, because Ti reacts more easily with oxygen to form an oxide layer, and it also shows higher resistance against chlorine containing corrosion media.

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A strudyon the improvement of the oxidation resistance for high temperature materials by coating process (코팅에 의한 고온재료의 내산화성 향상을 위한 연구)

  • 강석철;민경안;안연상;김길무
    • Journal of the Korean institute of surface engineering
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    • v.30 no.2
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    • pp.93-103
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    • 1997
  • High temperature materials used in the elevated temperature and corrosive atmosphere must have the good oxidation resistance and preserve their own mechanical properties simultaneously. For the oxidation resistance, it is very important to form a protective oxide scale such as $Al_2O_3$ or $Cr_2O_3$ on the substrate. However, the additions of protective oxide forming elements such as Cr and Al in the alloy to enhance its oxidation resistance are limited due to the deleterious effects on their mechanical properties. PECVD(P1asma Enhanced Chemical Vapor Deposition) coating processes were employed to improve the oxidation resistance at high temperature. Cr and/or A1 were coated on the substrates of Ni and Inconel 600 at various temperatures of 400, 500, $600^{\circ}C$ and at different conditions of specimen surfaces. Then, coated specimens were exposed to isothermal and cyclic oxidation conditions in air at 1000 and $1100^{\circ}C$. In order to enhance the adhesion between the substrate and coated layer, heat treatments of the coated specimens were conducted in a vacuum. At isothermal oxidation experiments, Al-coated Ni specimen showed better oxidation resistance than pure Ni. At cyclic oxidation experiments at $1000^{\circ}C$. Cr and Al-coated specimen showed better oxidation resistance. Cr-coated Inconel 600 had also showed better oxidation resistance due to Cr in the substrate. By PECVD coating process, oxidation resistance could be improved, but it was not improved as expected due to the weakness of the adhesion between the substrate and the coated layer.

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Adhesion Change of AZO/PET Film by ZrCu Insertion Layer

  • Ko, Sang-Won;Jung, Jong-Gook;Park, Kyeong-Soon;Lim, Sil-Mook
    • Journal of the Korean institute of surface engineering
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    • v.49 no.3
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    • pp.252-259
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    • 2016
  • In order to form an aluminum-doped zinc oxide (AZO) transparent electrode film on a polyethylene terephthalate (PET) substrate used for a flexible display substrate, the AZO transparent electrode was produced at low temperature without substrate heating. Even though the produced electrode showed characteristic optical transmittance of 90 % (at 550 nm) and sheet resistance within $100{\Omega}/sq$, cracks occurred 10 minutes after loading applied 2 mm radius of curvature, and the sheet resistance increased linearly. An insertion layer of ZrCu was formed between the AZO film and the PET substrate to suppress the generation of cracks on the AZO film. It was verified that the crack was not generated 30 minutes after the loading of 2 mm radius of curvature, and no increase in sheet resistance was recorded. There was also not cracks in the dynamic bending test of 4 mm radius, but surface resistance was slightly increased. As a result, the ZrCu insertion film improved the interfacial adhesion between the substrate and AZO film layer without increasing sheet resistance and decreasing transmittance.

Study on Flaking Resistance of Hot-dip Galvanizing Coating

  • Taixiong, Guo;Ping, Yuan;Yongqing, Jin;chunfu, Liu;Wei, Li
    • Corrosion Science and Technology
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    • v.9 no.4
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    • pp.143-146
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    • 2010
  • For the issue of flaking of the hot-dip galvanizing coating during drawing, the microcosmic characteristics of the coatings have been analyzed and experiments have been done to investigate the influence of coating thickness, Al content and steel substrate strength on its flaking-resistance. The results show that the fact of flaking is that the coating partially flaked off at the position far away from interface of steel substrate and coating, and not entirely flaked off from steel substrate because of poor adhesion. The flaking-resistance of coating decreases with the increasing of coating thickness and steel substrate strength, and increases with the increasing of Al content in coating at the same experimental conditions.

Extraction of Substrate Resistance in MOSFET Through DC Base Resistance Measurement of Parasitic BJT (기생 BJT의 DC 베이스저항 측정을 통한 MOSFET의 기판저항 추출)

  • Jung, Dae-Hyoun;Cha, Jun-Young;Cha, Ji-Young;Lee, Seong-Hearn
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.393-394
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    • 2008
  • This paper presents a new method to extract the substrate resistance by fitting current-dependent base resistance of parasitic BJT without a complex RF extraction method. The extracted substrate resistance values using the new method match well with those using the RF one, verifying the accuracy of the proposed DC technique.

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Extraction of Substrate Resistance Parameters for RF MOSFETs Based on Three-Port Measurement

  • Kang, In-Man;Shin, Hyung-Cheol
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.809-812
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    • 2005
  • In this work, a new method for extracting substrate parameters of RF MOSFETs based on 3-port measurement is presented using device simulation. A T-type substrate resistance network is used. 3-port Y-parameter analyses were performed on the equivalent circuit of RF MOSFETs. All the components in the RF MOSFETs when the device is turned off were extracted directly from the 3-port device simulation data. The small-signal output admittance $Y_{22}$ can be well modeled up to 40 GHz. From the 3-port simulation and modeling results, it was verified that the proposed equivalent circuit and parameter extraction method was more accurate than the single substrate resistance model.

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Optimization of Thermal Performance in Nano-Pore Silicon-Based LED Module for High Power Applications

  • Chuluunbaatar, Zorigt;Kim, Nam-Young
    • International Journal of Internet, Broadcasting and Communication
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    • v.7 no.2
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    • pp.161-167
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    • 2015
  • The performance of high power LEDs highly depends on the junction temperature. Operating at high junction temperature causes elevation of the overall thermal resistance which causes degradation of light intensity and lifetime. Thus, appropriate thermal management is critical for LED packaging. The main goal of this research is to improve thermal resistance by optimizing and comparing nano-pore silicon-based thermal substrate to insulated metal substrate and direct bonded copper thermal substrate. The thermal resistance of the packages are evaluated using computation fluid dynamic approach for 1 W single chip LED module.

Dependance of the Process Parameters on the Characteristic of the ITO Thin Films (ITO 박막의 공정변수에 따른 특성 연구)

  • 김소라;서정은;김상호
    • Journal of the Korean institute of surface engineering
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    • v.37 no.3
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    • pp.158-163
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    • 2004
  • ITO thin film was deposited on the glass by RF magnetron sputtering. Dependance of the process parameters such as thickness, target-to-substrate distance, substrate temperature and oxygen partial pressure on the transmittance and electrical resistance of ITO film were investigated. The deposition conditions for getting better optical and electrical ITO characteristics were the 1800-$2300\AA$ thickness, 65mm substrate-to-target distance, $350^{\circ}C$ substrate temperature and 8% oxygen partial pressure. At these conditions, the transmittance and sheet resistance of the ITO film were 83.3% and 77.86Ω/$\square$, respectively.