• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.25-31
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• 2004

In this paper, we introduce kinetic Monte Carlo (kMC) methods for simulating diffusion process in nano-scale device fabrication. At first, we review kMC theory and backgrounds and give a simple point defect diffusion process modeling in thermal annealing after ion (electron) implantation into Si crystalline substrate to help understand kinetic Monte Carlo methods. kMC is a kind of Monte Carlo but can simulate time evolution of diffusion process through Poisson probabilistic process. In kMC diffusion process, instead of. solving differential reaction-diffusion equations via conventional finite difference or element methods, it is based on a series of chemical reaction (between atoms and/or defects) or diffusion events according to event rates of all possible events. Every event has its own event rate and time evolution of semiconductor diffusion process is directly simulated. Those event rates can be derived either directly from molecular dynamics (MD) or first-principles (ab-initio) calculations, or from experimental data.

• Journal of Life Science
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• v.25 no.2
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• pp.121-129
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• 2015

Alginates are found in marine brown seaweeds and in extracellular biofilms secreted by some bacteria. Previously, we reported an oligoalginate lyase from Sphingomonas sp. MJ-3 (MJ3-Oal) that had an exolytic activity and protein sequence homology with endolytic polymannuronate (polyM) lyase in the N-terminal region. In this study, the MJ3-Oal was tested for both exolytic and endolytic activity by homology modeling using the crystal structure of Alg17c from Saccharophagus degradans 2-40T. The tyrosine residue at the $426^{th}$ position, which possibly formed a hydrogen bond with the substrate, was mutated to phenylalanine. The FPLC profiles showed that MJ3-Oal degraded alginate quickly to monomers as a final product through the oligmers, whereas the Tyr426Phe mutant showed only exolytic alginate lyase activity. $^1H$-NMR spectra also showed that MJ3-Oal degraded the endoglycosidic bond of polyM and polyMG (polymannuronate-guluronate) blocks. These results indicate that oligoalginate lyase from Sphingomonas sp. MJ-3 probably catalyzes the degradation of both exo- and endo-glycosidic bonds of alginate.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.287.1-287.1
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• 2016

Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.

• Microbiology and Biotechnology Letters
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• v.46 no.3
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• pp.234-243
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• 2018

The Antarctic Ocean contains numerous microorganisms that produce novel biocatalysts that can have applications in various industries. We screened various psychrophilic bacterial strains isolated from the Ross Sea and found that a Croceibacter atlanticus strain (Stock No. 40-F12) showed high lipolytic activity on a tributyrin plate. We isolated the corresponding lipase gene (lipCA) by shotgun cloning and expressed the LipCA enzyme in Escherichia coli cells. Homology modeling of LipCA was carried out using the Spain Arreo lake metagenome alpha/beta hydrolase as a template. According to the model, LipCA has an ${\alpha}/{\beta}$ hydrolase fold, Gly-X-Ser-X-Glymotif, and lid sequence, indicating that LipCA is a typical lipase enzyme. Active LipCA enzyme was purified fromthe cell-free extract by ammonium sulfate precipitation and gel filtration chromatography. We determined its enzymatic properties including optimum temperature and pH, stability, substrate specificity, and organic solvent stability. LipCA was immobilized by the cross-linked enzyme aggregate (CLEA) method and its enzymatic properties were compared to those of free LipCA. After cross-linking, temperature, pH, and organic solvent stability increased considerably, whereas substrate specificities did not changed. The LipCA CLEA was recovered by centrifugation and showed approximately 40% activity after 4th recovery. This is the first report of the expression, characterization, and immobilization of a C. atlanticus lipase, and this lipase could have potential industrial application.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.88-93
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• 2001

The thermal behavior and the crystallographic characteristics of an epitaxial $C49-TiSi_2$ island formed in a Si (001) substrate by $N_2$, treatment were investigated by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found from the analyzed results that the epitaxial $C49-TiSi_2$ was thermally stable even at high temperature of $1000^{\circ}C$ therefore did not transform into the C54-stable phase and did not deform morphologically. HRTEM results clearly showed that the epitaxial $TiSi_2$ phase and Si have the orientation relationship of (060)[001]$TiSi_2$//(002)[110]Si, and the lattice strain energy at the interface was mostly relaxed by the formation of misfit dislocations. Furthermore, the mechanism on the formation of the epitaxial $_C49-TiSi2$ in Si and stacking faults lying on the (020) plane of the C49 Phase were discussed through the analysis of the HRTEM image and the atomic modeling.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.8
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• pp.39-48
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• 2016

In this paper, we propose thermal resistance compact model of FinFET structure that has hexagon shaped source/drain. The heating effect and thermal properties were increased by reduced size of the device, and thermal resistance is an important factor to analyze the effect and the properties. The heat source and each contact that is moved heat out were set up in transistor, and domain is divided by the heat source and the four parts of contacts : source, drain, gate, substrate. Each contact thermal resistance model is subdivided as a easily interpretable structure by analyzing the temperature and heat flow of the TCAD simulation results. The domains are modeled based on an integration or conformal mapping method through the structure parameters according to its structure. First modeled by analyzing the thermal resistance to a single fin, and applying the change in the parameter of the channel increases to improve the accuracy of the thermal resistance model of the multi-fin/ finger. The proposed thermal resistance model was compared to the thermal resistance by analyzing results of the 3D Technology CAD simulations, and the proposed total thermal resistance model has an error of 3 % less in single and multi-finl. The proposed thermal resistance model can predict the thermal resistance due to the increase of the fin / finger, and the circuit characteristics can be improved by calculating the self-heating effect and thermal characterization.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.11 s.353
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• pp.216-220
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• 2006

One of the approaches for reducing the size of the quarter wavelength monopole antenna is the helix and the stacked structure. This paper presents a formula for the relationship between the geometrical parameter and the operating frequency of a slacked helix chip antenna. The stacked helix chip antenna was designed for PCS/IMT-2000 dual-bands operation. The fabricated antenna uses an FR-4 substrate with relative permittivity of 4.2, and its dimensions are $15{\times}7.5{\times}0.4mm^3$. The measured impedance bandwidth (VSWR<2) is 400MHz at the operating frequency.

• Journal of the Korean Society for Nondestructive Testing
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• v.34 no.3
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• pp.233-240
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• 2014

In this study, we investigated the dispersion characteristics of guided waves in thin films. Dispersion curves are essential for understanding not only the behavior of ultrasonic waves, but also the mechanical properties of thin films. Matrix techniques are presented for modeling ultrasonic waves in multilayered structures before being used to calculate the dispersion curves for Al-steel and Al-composite specimens. When compared with the dispersion curves obtained using the commercial program (Disperse), the dispersion curves generated from the transfer matrix method show its validity. These developed methods are used to obtain dispersion curves for Al thin films deposited on a Si substrate. The resulting dispersion curves enable observation of both dispersive and non-dispersive behavior for the guided waves, depending on the thickness of the thin films.

• Journal of Microbiology and Biotechnology
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• v.28 no.9
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• pp.1482-1492
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• 2018

Fusarium oxysporum trypsin (FOT) is a fungal serine protease similar to mammal trypsin. The FOT could be successfully expressed in Pichiapastoris by engineering the natural propeptide APQEIPN. In this study, we constructed two recombinant enzymes with engineered amino acid sequences added to the N-terminus of FOT and expressed in P. pastoris. The N-terminal residues had various effects on the structural and functional properties of trypsin. The FOT, and the recombinants TE (with peptide YVEF) and TS (with peptide YV) displayed the same optimum temperature ($40^{\circ}C$) and pH (8.0). However, the combinants TE and TS showed significantly increased thermal stability at $40^{\circ}C$ and $50^{\circ}C$. Moreover, the combinants TE and TS also showed enhanced tolerance of alkaline pH conditions. Compared with those of wild-type FOT, the intramolecular hydrogen bonds and the cation ${\pi}$-interactions of the recombinants TE and TS were significantly increased. The recombinants TE and TS also had significantly increased catalytic efficiencies (referring to the specificity constant, $k_{cat}/K_m$), 1.75-fold and 1.23-fold than wild-type FOT. In silico modeling analysis uncovered that the introduction of the peptides YVEF and YV resulted in shorter distances between the substrate binding pocket (D174, G198, and G208) and catalytic triad (His42, Asp102, and Ser180), which would improve the electron transfer rate and catalytic efficiency. In addition, N-terminal residues modification described here may be a useful approach for improving the catalytic efficiencies and characteristics of other target enzymes.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.9
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• pp.837-840
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• 2015

Graphene is a single layer of carbon material which shows very high electron mobility, so many kinds of research on the devices using graphene layer have been performed so far. Graphene material is adequate for high frequency and fast operation devices due to its higher mobility. In this research, the actual graphene layer is evaluated using RT-CVD method which can be available for mass production. The mobility of $7,800cm^2/Vs$ was extracted, that is more than 7 times of that in silicon substrate. The graphene transistor model having no band gap is evaluated using both of pMOS and nMOS based on the measured mobility values. And then the response of graphene transistor model regarding to gate length and width is examined.