• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1141-1147
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• 2012

Electromagnetic analysis to design unclonable PUFs with frequency-dependant materials with Debye dispersion was considered. To simulate FDTD calculations consider that 1-D problem of pulsed plane wave traveling in free space normally incident on air-silicon material interface on dielectric substrate. The pulse traveling wave at a vacuum-medium interface was reflected, and transmitted wave was dissipated. As a result, 1-D PUF modeling with Debye dispersion on dielectric substrate structure can be applied and FDTD calculation for PUF modeling is a good approximation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1157-1164
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• 2003

This paper shows the results of atomistic modeling for the interaction between spherical nano abrasive and substrate in chemical mechanical polishing processes. Atomistic modeling was achieved from 2-dimensional molecular dynamics simulations using the Lennard-Jones 12-6 potentials. The abrasive dynamics was modeled by three cases, such as slipping, rolling, and rotating. Simulation results showed that the different dynamics of the abrasive results the different features of surfaces. This model can be extended to investigate the 3-dimensional chemical mechanical polishing processes.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.12
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• pp.33-38
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• 1996

In this paper, we modeled the complex dielectric constant and analyzed the projpagation characteristics of a FR-4 composite substrate with different compositions. From the wideband dielectric modeling and the propagation loss analysis of FR-4 composites that consists of FR-4 resin and E-glass reinforcement,we have found that the propagation loss and velocity increase with the volume fraction of FR-4 resin above 1 GHz. These results are helpful in determining to deisgn optimum substrate composition ratio and cross-sectional geometry of high-speed and high-density transmission line.

• Journal of Microbiology and Biotechnology
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• v.24 no.7
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• pp.954-958
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• 2014

Succinic semialdehyde dehydrogenase (SSADH) catalyzes the oxidation of succinic semialdehyde (SSA) into succinic acid in the final step of ${\gamma}$-aminobutyric acid degradation. Here, we characterized Bacillus subtilis SSADH (BsSSADH) regarding its cofactor discrimination and substrate inhibition. BsSSADH showed similar values of the catalytic efficiency ($k_{ca}t/K_m$) in both $NAD^+$ and $NADP^+$ as cofactors, and exhibited complete uncompetitive substrate inhibition at higher SSA concentrations. Further analyses of the sequence alignment and homology modeling indicated that the residues of catalytic and cofactor-binding sites in other SSADHs were highly conserved in BsSSADH.

• Journal of the Korean Society of Industry Convergence
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• v.25 no.6_1
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• pp.941-952
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• 2022

In this study, additive manufacturing technology was applied to restore a planner miller that was unusable due to aging. The drive spur gear of the planner miller was inoperable due to many defects in the teeth. The shape of the defective gear teeth was restored by deposition of the defective teeth using the DED method. However, as the location of the deposition head and the location of the set origin became farther, the deposition shape was different from the modeling shape. Nonetheless, since the modeling of the deposition part was designed to be larger than the tooth shape of the original gear, it was possible to completely restore all gear teeth through post-processing. The arrangement interval of the flow lines of the deposition part was narrower than that of the substrate. The hardness of the substrate was 172 HV, and that of the deposition part was 345 HV, which was twice as high as that of the substrate.

• Journal of the Semiconductor & Display Technology
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• v.5 no.4 s.17
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• pp.35-40
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• 2006

This paper shows that the effect of exposing on the top area and a solution which using a water circulation system. Semiconductor substrate stage is made from Aluminum and is repeated the sequence of exposing (150), turning OFF shutter, taking 30 sec. interval at the top area of stage. So the temperature of substrate temperature rises continuously. On this, we made a waterway at the inner part of the substrate stage and operated a water circulation system. We measured the temperature of a substrate stage surface with a thermocouple attached to the substrate stage. To analyze the top area's temperature, we used Analysis Program ANSYS for analysis and 3D CAD program Solid-Works for modeling.

• Journal of the Korean institute of surface engineering
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• v.44 no.1
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• pp.26-31
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• 2011

Numerical modeling is used to investigate the perturbation of a single Langmuir probe (0.2 mm diameter shielded with 6 mm insulator) inserted along the center axis of a cylindrical inductively coupled plasma chamber filled with Ar at 10 mTorr and driven by 13 MHz. The probe was driven by a sine wave. When the probe tip is close to a substrate by 24.5 mm, the probe characteristics was unperturbed. At 10 mm above the substrate, the time averaged electric potential distribution around the tip was severly distorted making a normal probe analysis impossible.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.46-50
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• 2020

In this research, the attractive force of Coulomb type electrostatic chuck(ESC), which consisted of alumina dielectric, on glass substrate was studied by using the finite element analysis. The attractive force is caused by the high electrical resistance which occurs in contact region between glass substrate and dielectric layer. This research tries the simple geometrical modeling of ESC and glass substrate with air gap. The influences of the applied voltage, and air gap are investigated. When alumina dielectric with 1014 Ω·cm, 1.5 kV voltage, and 0.01 mm air gap were applied, electrostatic force in this work reached to 4 gf/㎠. This results show that the modeling of air gap is essential to derive the attractive force of the ESC.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.4
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• pp.32-42
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• 2007

The substrate resistance is modeled to estimate the performance degradation of analog circuits by substrate noise in a $0.35{\mu}m$ twin-well non-epitaxial CMOS process. The substrate resistance model equations are applied to the P+ guard-ring isolation structure and a good match was achieved between measurements and models. The substrate resistance is divided into four types and a semi-empirical model equation is obtained for each type of substrate resistance. The rms(root-mean-square) error of the substrate resistance model is below 10% compared with the measured resistance. To apply this substrate resistance model to the P+ guard ring structure, ADS(Advanced Design System) circuit simulation results are compared with the measurement results using Network Analyzer, and relatively good agreements are obtained between measurements and simulations.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.173-178
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• 2012

Using accurate MOSFET substrate parameters obtained by a RF direct extraction method, it is demonstrated that a BSIM4 model with only substrate resistances is not physically valid to apply in the wide range of gate length because of scaling inaccuracy. In order to remove the unphysical problem of the BSIM4, a modified BSIM4 model with additional dielectric substrate capacitance is used and its physical validity is verified by observing excellent gate length scalability.