• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.155-158
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• 1997

Highly oriented diamond films were deposited on a (100) silicon substrate by bias enhanced nucleation technique. Both plan-view and cross-section TEM were applied to study the nucleation and growth mechanism of diamond grains. Randomly oriented polycrystalline diamond grains with internal microtwins were observed at the nucleation stage while defect free regions were retained at the growth stage and were apparently related with the epitaxy of diamond films. From our experimental results, the nucleation and texture formation mechanism of diamond films is discussed.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.21 no.5
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• pp.628-636
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• 1997

Flow visualization technique incorporating photochromic dye is used to study the flow characteristics of the gravity driven laminar wavy film. The film thickness and wave speed are successfully measured by flow visualization. As the inclination angle increases, the waves have higher peaks and lower substrate thickness. The measured cross stream velocity at the free surface is up to 10% of stream wise velocity, which shows enhanced mixing in the lump of the film. The measured stream wise velocity profiles are close to parabolic profile near the substrate and the peak but show significant velocity defect near the rear side of the wave. The measured wall shear rate distributions show good agreement with the previous workers' numerical results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.95-98
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• 1999

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm. In order to investigate the effect of the deposition conditions on the properties of ZnO thin films at an oxygen pressure of 350 mTorr, the experiment has been Performed at various substrate temperatures in the range of 20$0^{\circ}C$ to $700^{\circ}C$. According to XRD, (002) textured ZnO films of high crystalline quality have been obtained and the intensity of UV emission was the highest at 40$0^{\circ}C$ substrate temperature.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.139-147
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• 1995

The mechanism of the ionized cluster beam deposition has been studied using Molecular Dynamics Simulation. The Embedded Atom Method(EAM) potential were used in the simulation. The impact of a Au95-cluster on Au(100) substrate was studied for the impact energies 0.15-10eV/atom. The dependency of the impact energy of cluster beam was observed. For the cluster energy impact of 10eV per atom, the defects on surface were created and the cluster embedded into substrate as an amorphous state. For the energy of 0.5eV per atom, the defect free homoepitaxial growth was observed and atomic scale nucleation was formated, which are in good agreement with experiment. Thus molecular dynamics simulation is very useful to study the mechanism of the ionized cluster beam deposition.

• Advances in nano research
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• v.4 no.1
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• pp.45-50
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• 2016

Data of Raman spectroscopy from graphene and few-layer graphene (FLG) irradiated by SEM electron beam in the range of energies 0.2 -30 keV are presented. The obvious effect of damaging the nanostructures by all used beam energies for specimens placed on insulator substrates ($SiO_2$) was revealed. At the same time, no signs of structural defects were observed in the cases when FLG have been arranged on metallic substrate. A new physical mechanism of under threshold energy defect production supposing possible formation of intensive electrical charged puddles on insulator substrate surface is suggested.

• Journal of the Semiconductor & Display Technology
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• v.1 no.1
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• pp.29-33
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• 2002

In the flip-chip process, the problem like electric defect or fatigue crack caused by the difference of CTE, between chip and substrate board had occurred. Underfill of flip chip to overcome this defects is noticed as important work developing in whole reliability of chip by protecting the chip against the external shock. In this paper, we introduce the underfill methods using mold and plunge and improvement of process and reliability, and the advantage which can be taken from embodiment of device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.35-38
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• 1995

Indium Tin Oxide(ITO) thin film is transparent to visible ray and conductive in electricity. It is seen that the samples made by the sputtering process have high transmission rate to visible ray and high adhesion , but the planar type magnetron sputtering process with is very well known in industrial region have a defect of partial erosion on the surface of target and a high loss of target and also since the substrate is positioned in plasma, the damage on thin film surface is caused by the reaction with plasma. In cylindrical magnetron sputtering system. it is known that the loss of target is little , the damage of thin film is very little and the adhesion of thin film with substrate is strong. In this study, we have made ITO thin film in the cylindrical DC magnetron system with the variable of substrate temperature , magnetic field, vacuum condution and the applied voltage. The general temperature for formation on ITO is asked at 350 $^{\circ}C$~400$^{\circ}C$ but we have made ITO is low temperature(80-150$^{\circ}C$) By studing electrical and optical properties of ITO thin fims made by varing several condition, we have searched the optimal condition for formation in the best ITO in low temperature.

• Korean Journal of Materials Research
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• v.22 no.1
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• pp.8-15
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• 2012

Silicon-based thin film was prepared at room temperature by an electrochemical deposition method and a feasibility study was conducted for its use as an anode material in a rechargeable lithium battery. The growth of the electrodeposits was mainly concentrated on the surface defects of the Cu substrate while that growth was trivial on the defect-free surface region. Intentional formation of random defects on the substrate by chemical etching led to uniform formation of deposits throughout the surface. The morphology of the electrodeposits reflected first the roughened surface of the substrate, but it became flattened as the deposition time increased, due primarily to the concentration of reduction current on the convex region of the deposits. The electrodeposits proved to be amorphous and to contain chlorine and carbon, together with silicon, indicating that the electrolyte is captured in the deposits during the fabrication process. The silicon in the deposits readily reacted with lithium, but thick deposits resulted in significant reaction overvoltage. The charge efficiency of oxidation (lithiation) to reduction (delithiation) was higher in the relatively thick deposit. This abnormal behavior needs to clarified in view of the thickness dependence of the internal residual stress and the relaxation tendency of the reaction-induced stress due to the porous structure of the deposits and the deposit components other than silicon.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.326-328
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• 1995

SiC buffer layers were grown on Si(100) substrates by ultra-high-vacuum electron cryclotron resonance plasma (UHV ECR plasma) from $CH_4/H_2$ mixture at 700$^{\circ}C$. The electron densities and temperature were measured by single probe. The axial plasma potentials measured by emissive probe had the double layer structure at positive substrate bias. Piranha cleaning was carried out as ex-situ wet cleaning. Clean and smooth silicon surface were prepared by in-situ hydrogen plasma cleaning at 540$^{\circ}C$. A short exposure to hydrogen plasma transforms the Si surface from 1$\times$1 to 2$\times$1 reconstruction. It was monitored by reflection high energy electron diffraction (RHEED). The defect densities were analysed by the dilute Schimmel etching. The results showed that the substrate bias is important factor in hydrogen plasma cleaning. The low base pressure ($5\times10^{-10}$ torr) restrains the $SiO_2$ growth on silicon surface. The grown layers showed different characteristics at various substrate bias. RHEED and K-ray Photoelectron spectroscopy study showed that grown layer was SiC.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.10a
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• pp.294-297
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• 2004

RTP(Rapid Thermal Pressing) is to fabricate desired pattern on polymer substrate by pressing patterned mold against the substrate heated around glass transition temperature. For a successful RTP process, the whole process including heating, molding, cooling and demolding should be conducted 'rapidly' as possible. As the RTP process is effective in replicating patterns on flat large surface without causing shape distortion after cooling, it is being widely used for fabricating various micro/bio application components, especially with channel-type microstructures on surface. This investigation finally aims to develop a RTP process machine for mass-producing micro/bio application components. As a first step for that purpose, we intended to examine the technological difficulties for realizing mass production by RTP process. Therefore, in the current paper, 4 kinds of RTP machines were examined and then the RTP process was conducted experimentally for PMMA film by using one of the machines, HEX 03. The micro-patterned molds used for RTP experiment was fabricated from silicon wafer by semi-conduct process. The replicated micro patterns on PMMA films were examined using SEM and the causes of defect observed in the replicated patterns were discussed.