The Korean Journal of Ceramics

The Korean Ceramic Society (한국세라믹학회)
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Three-dimensional TEM Characterization of Highly Oriented Diamond Films on a (100) Silicon Substrate

  • Seung Joon Jeon (Center for Advanced Materials, Department of Chemical and Nuclear Engineering, University of Massachusetts, Lowell, USA) ;
  • Arun Kymar Chawla (Center for Advanced Materials, Department of Physics and Applied Physics, University of Massachusetts, Lowell, USA) ;
  • Young Joon Baik (Thin Film Technology Research Center Korea Institute of Science and Technology, Seoul, Korea) ;
  • Changmo Sung (Center for Advanced Materials, Department of Chemical and Nuclear Engineering, University of Massachusetts, Lowell, USA)
  • Published : 1997.09.01
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Abstract

Highly oriented diamond films were deposited on a (100) silicon substrate by bias enhanced nucleation technique. Both plan-view and cross-section TEM were applied to study the nucleation and growth mechanism of diamond grains. Randomly oriented polycrystalline diamond grains with internal microtwins were observed at the nucleation stage while defect free regions were retained at the growth stage and were apparently related with the epitaxy of diamond films. From our experimental results, the nucleation and texture formation mechanism of diamond films is discussed.

Keywords

References

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