• Corrosion Science and Technology
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• 제13권4호
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• pp.125-129
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• 2014

Shinning spot defects on galvanized steel sheets were studied by optical microscope, scanning electron microscope(SEM), Energy Dispersive Spectrometer (EDS) and Laser-Induced Breakdown Spectroscopy Original Position Statistic Distribution Analysis (LIBSOPA) in this study. The research shows that the coating thickness of shinning spot defects which caused by the substrate defect is much lower than normal area, and when skin passed, the shinning spot defect area can not touch with skin pass roll which result in the surface of shinning spot is flat while normal area is rough. The different coating morphologies have different effects on the reflection of light, which cause the shinning spot defects more brighter than normal area.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.1353-1356
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• 2004

In recent year, OLED(organic light emitted display) is used as the next generation device of FPD. OLED have been replacing the flat panel display device such as LCD, STN-LCD and TFT because this device is more efficient, economic and simple than those FPD devices, and this need not backlight system for visualization. The performance and efficiency of OLED is related with surface defect of ITO coated glass substrate. The typical surface defect of glass substrate is nonuniformity and bad surface roughness. ITO coated glass substrate is destroied for inspection about surface roughness and non-uniformity. Generally detection of the defects in the surface for ITO coated glass substrate is dependent on operator's experience. In this research, relationship between working parameter and surface non-uniformity is studied using regression analysis.

• 대한기계학회논문집B
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• 제26권11호
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• pp.1597-1604
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• 2002

In this study, numerical investigation has been performed on the impingement, spreading and solidification of a coating material droplet impacting onto a solid substrate in the thermal spray process. The numerical model is validated through the comparison of the present numerical result with experimental data fer the flat substrate without surface defects. An analysis of deposition formation on the non-polished substrate with surface defects is also performed. The parametric study is conducted with various surface defect sizes and shapes to examine the effect of surface defects on the impact and solidification of the liquid droplet on the substrate.

• Applied Microscopy
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• 제6권1호
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• pp.33-38
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• 1976

Formation of crystal defects which may occur during and after the vacuum deposition of silver films on rocksalt substrates were studied by electron microscopy. To obtain defect free films, various evaporation conditions, such as evaporation rate, substrate temperature, substrate treatments and annealing of films were examined. Stacking faults and micro-twins are dominant defects in silver films.

• Corrosion Science and Technology
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• 제9권3호
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• pp.109-115
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• 2010

Interstitial-free (IF) steels are widely used for car body material. However, a few types of streaky mark defect are commonly found on hot dip galvannealed (GA) IF steel sheets. In the present study, both the phase structure of a streaky mark defect and the microstructure of the substrate just below it were characterized by optical microscopy (OM) and scanning electron microscopy (SEM). It was found that the bright streaky mark area was composed of ${\delta}$ phase while the dark normal area was full of craters. More than half of the grains at the uppermost surface of the substrate just below the streaky mark defect are unrecrystallized grains which could result from lower finish rolling temperature during hot rolling and be kept stable during the annealing process, while almost all the grains in the normal area are equiaxed grains. In order to confirm the effect of the unrecrystallized grains on the coating morphology, hot dip galvannealing simulation experiments were carried out in IWATANI HDPS. It is proved that the unrecrystallized grains accelerate the Fe-Zn reaction rate during galvannealing and result in a flatter coating surface and an even coating thickness. Finally, a formation mechanism of the streaky mark defect on the hot dip galvannealed IF steel sheet was discussed.

• 한국산학기술학회논문지
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• 제12권4호
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• pp.1803-1811
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• 2011

TFT-LCD용 TFT기판 상에서 저에너지 마이크로 컬럼을 이용하는 전기적인 결함 검출 메카니즘을 분석하였다. 본 연구에서는 고진공 챔버 내에서 7인치 TFT 기판에 저에너지 전자빔을 주사하여 여러 가지 불량 화소에 대한 SEM 이미지를 획득하였다. 더불어 각각의 불량 화소에서 나타나는 현상과 전기적인 거동과의 연관성을 분석하여 검출 메카니즘을 해석하였다. 그 결과로서 저에너지 초소형 전자 컬럼을 이용하는 저에너지 전자빔에 의한 SEM 이미지는 전자간 반발효과에 크게 영향을 받는 일관성 있는 결과를 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.420-420
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• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.

• 한국전기전자재료학회논문지
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• 제11권4호
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• pp.267-273
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• 1998

The band structures of $Si_{1-x}Ge_x$ layers grown on $Si_{1-y}Ge_y$ substrate are calculated using k$\cdot$p and strain Hamiltonians. The hole drift mobilities in the plane direction are then calculated by taking into account the screening effect and the density-of-states of the impurity band. When $Si_{1-x}Ge_x$ is grown on Si substrate, the mobilities of (110) and (111) $Si_{1-x}Ge_x$ layers are larger than that of (001) $Si_{1-x}Ge_x$. However, due to the large defect and surface scattering, (110) and (111) $Si_{1-x}Ge_x$ layers may not be useful for the development of the fast device. Meanwhile, when Si is grown on $Si_{1-y}Ge_y$ substrate, the mobilities of (001) and (110) Si layers are greatly enhanced. Based on the amount of defect and the surface scattering, it is expected that Si grown on (001) $Si_{1-y}Ge_y$ substrate, where the Ge contents is larger than 10%(y>0.1), has the highest mobility.

• Korean Chemical Engineering Research
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• 제52권3호
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• pp.340-346
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• 2014

Continuous and dense ZIF-7 membranes were successfully synthesized on ${\alpha}-Al_2O_3$ porous substrate via two-step crystallization technique. ZIF-7 seeding layer was first deposited on porous ${\alpha}-Al_2O_3$ substrate by in-situ low temperature crystallization, and then ZIF-7 membrane layer can be grown through the secondary high-temperature crystallization. Two synthesis solutions with different concentration were used to prepare ZIF-7 seeding layer and membrane layer on porous ${\alpha}-Al_2O_3$ substrate, respectively. As a result, a continuous and defect-free ZIF-7 membrane layer can be prepared on porous ${\alpha}-Al_2O_3$ substrate, as confirmed by scanning electron microscope. XRD characterization shows that the resulting membrane layer is composed of pure ZIF-7 phase without any impurity. A single gas permeation test of $H_2$, $O_2$, $CH_4$ or $CO_2$ was conducted based on our prepared ZIF-7 membrane. The ZIF-7 membrane exhibited excellent H2 molecular sieving properties due to its suitable pore aperture and defect-free membrane layer.

• 소성∙가공
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• 제25권6호
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• pp.353-358
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• 2016

Direct energy deposition (DED) is an additive manufacturing technique that involves the melting of metal powder with a high-powered laser beam and is used to build a variety of components. In recent year, it can be widely used in order to produce hard, wear resistant and/or corrosion resistant surface layers of metallic mechanical parts, such as dies and molds. For the purpose of the hardfacing to achieve high wear resistance and hardness, application of high speed steel (HSS) can be expected to improve the tool life. During the DED process using the high-carbon steel, however, defects (delamination or cracking) can be induced by rapid solidification of the molten powder. Thus, substrate preheating is generally adopted to reduce the deposition defect. While the substrate preheating ensures defect-free deposition, it is important to select the optimal preheating temperature since it also affects the microstructure evolution and mechanical properties. In this study, AISI M4 powder was deposited on the AISI 1045 substrate preheated at different temperatures (room temperature to $500^{\circ}C$). In addition, the micro-hardness distribution, cooling rates, and microstructures of the deposited layers were investigated in order to observe the influence of the substrate preheating on the mechanical and metallurgical properties.