• Corrosion Science and Technology
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• v.13 no.4
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• pp.125-129
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• 2014

Shinning spot defects on galvanized steel sheets were studied by optical microscope, scanning electron microscope(SEM), Energy Dispersive Spectrometer (EDS) and Laser-Induced Breakdown Spectroscopy Original Position Statistic Distribution Analysis (LIBSOPA) in this study. The research shows that the coating thickness of shinning spot defects which caused by the substrate defect is much lower than normal area, and when skin passed, the shinning spot defect area can not touch with skin pass roll which result in the surface of shinning spot is flat while normal area is rough. The different coating morphologies have different effects on the reflection of light, which cause the shinning spot defects more brighter than normal area.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.1353-1356
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• 2004

In recent year, OLED(organic light emitted display) is used as the next generation device of FPD. OLED have been replacing the flat panel display device such as LCD, STN-LCD and TFT because this device is more efficient, economic and simple than those FPD devices, and this need not backlight system for visualization. The performance and efficiency of OLED is related with surface defect of ITO coated glass substrate. The typical surface defect of glass substrate is nonuniformity and bad surface roughness. ITO coated glass substrate is destroied for inspection about surface roughness and non-uniformity. Generally detection of the defects in the surface for ITO coated glass substrate is dependent on operator's experience. In this research, relationship between working parameter and surface non-uniformity is studied using regression analysis.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.11
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• pp.1597-1604
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• 2002

In this study, numerical investigation has been performed on the impingement, spreading and solidification of a coating material droplet impacting onto a solid substrate in the thermal spray process. The numerical model is validated through the comparison of the present numerical result with experimental data fer the flat substrate without surface defects. An analysis of deposition formation on the non-polished substrate with surface defects is also performed. The parametric study is conducted with various surface defect sizes and shapes to examine the effect of surface defects on the impact and solidification of the liquid droplet on the substrate.

• Applied Microscopy
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• v.6 no.1
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• pp.33-38
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• 1976

Formation of crystal defects which may occur during and after the vacuum deposition of silver films on rocksalt substrates were studied by electron microscopy. To obtain defect free films, various evaporation conditions, such as evaporation rate, substrate temperature, substrate treatments and annealing of films were examined. Stacking faults and micro-twins are dominant defects in silver films.

• Corrosion Science and Technology
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• v.9 no.3
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• pp.109-115
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• 2010

Interstitial-free (IF) steels are widely used for car body material. However, a few types of streaky mark defect are commonly found on hot dip galvannealed (GA) IF steel sheets. In the present study, both the phase structure of a streaky mark defect and the microstructure of the substrate just below it were characterized by optical microscopy (OM) and scanning electron microscopy (SEM). It was found that the bright streaky mark area was composed of ${\delta}$ phase while the dark normal area was full of craters. More than half of the grains at the uppermost surface of the substrate just below the streaky mark defect are unrecrystallized grains which could result from lower finish rolling temperature during hot rolling and be kept stable during the annealing process, while almost all the grains in the normal area are equiaxed grains. In order to confirm the effect of the unrecrystallized grains on the coating morphology, hot dip galvannealing simulation experiments were carried out in IWATANI HDPS. It is proved that the unrecrystallized grains accelerate the Fe-Zn reaction rate during galvannealing and result in a flatter coating surface and an even coating thickness. Finally, a formation mechanism of the streaky mark defect on the hot dip galvannealed IF steel sheet was discussed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.4
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• pp.1803-1811
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• 2011

We have analyzed the electrical defect detection mechanism using low energy microcolumn on the TFT substrate for TFT-LCD. In this study, we have acquired the SEM images of the various pixel defects for 7-inch TFT substrate by scanning of low energy electron beam in the high vacuum chamber. Futhermore, we have interpreted the defect detection mechanism through the correlations between the SEM images and electrical behaviors of the defective pixels. As a result, we obtained consistent results as the follows. We can confirm that the SEM images using low energy electron beam are significantly affected by the space charge effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.420-420
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• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.267-273
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• 1998

The band structures of $Si_{1-x}Ge_x$ layers grown on $Si_{1-y}Ge_y$ substrate are calculated using k$\cdot$p and strain Hamiltonians. The hole drift mobilities in the plane direction are then calculated by taking into account the screening effect and the density-of-states of the impurity band. When $Si_{1-x}Ge_x$ is grown on Si substrate, the mobilities of (110) and (111) $Si_{1-x}Ge_x$ layers are larger than that of (001) $Si_{1-x}Ge_x$. However, due to the large defect and surface scattering, (110) and (111) $Si_{1-x}Ge_x$ layers may not be useful for the development of the fast device. Meanwhile, when Si is grown on $Si_{1-y}Ge_y$ substrate, the mobilities of (001) and (110) Si layers are greatly enhanced. Based on the amount of defect and the surface scattering, it is expected that Si grown on (001) $Si_{1-y}Ge_y$ substrate, where the Ge contents is larger than 10%(y>0.1), has the highest mobility.

• Korean Chemical Engineering Research
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• v.52 no.3
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• pp.340-346
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• 2014

Continuous and dense ZIF-7 membranes were successfully synthesized on ${\alpha}-Al_2O_3$ porous substrate via two-step crystallization technique. ZIF-7 seeding layer was first deposited on porous ${\alpha}-Al_2O_3$ substrate by in-situ low temperature crystallization, and then ZIF-7 membrane layer can be grown through the secondary high-temperature crystallization. Two synthesis solutions with different concentration were used to prepare ZIF-7 seeding layer and membrane layer on porous ${\alpha}-Al_2O_3$ substrate, respectively. As a result, a continuous and defect-free ZIF-7 membrane layer can be prepared on porous ${\alpha}-Al_2O_3$ substrate, as confirmed by scanning electron microscope. XRD characterization shows that the resulting membrane layer is composed of pure ZIF-7 phase without any impurity. A single gas permeation test of $H_2$, $O_2$, $CH_4$ or $CO_2$ was conducted based on our prepared ZIF-7 membrane. The ZIF-7 membrane exhibited excellent H2 molecular sieving properties due to its suitable pore aperture and defect-free membrane layer.

• Transactions of Materials Processing
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• v.25 no.6
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• pp.353-358
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• 2016

Direct energy deposition (DED) is an additive manufacturing technique that involves the melting of metal powder with a high-powered laser beam and is used to build a variety of components. In recent year, it can be widely used in order to produce hard, wear resistant and/or corrosion resistant surface layers of metallic mechanical parts, such as dies and molds. For the purpose of the hardfacing to achieve high wear resistance and hardness, application of high speed steel (HSS) can be expected to improve the tool life. During the DED process using the high-carbon steel, however, defects (delamination or cracking) can be induced by rapid solidification of the molten powder. Thus, substrate preheating is generally adopted to reduce the deposition defect. While the substrate preheating ensures defect-free deposition, it is important to select the optimal preheating temperature since it also affects the microstructure evolution and mechanical properties. In this study, AISI M4 powder was deposited on the AISI 1045 substrate preheated at different temperatures (room temperature to $500^{\circ}C$). In addition, the micro-hardness distribution, cooling rates, and microstructures of the deposited layers were investigated in order to observe the influence of the substrate preheating on the mechanical and metallurgical properties.