• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.436-440
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• 2003

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.

• KSBB Journal
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• 제6권4호
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• pp.351-361
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• 1991

This study is on the investigation of hydrogen production and substrate removal by photosynthetic bacteria. After using of Rhodospillum rubrum KS-301 and IFO 3986, which are photosynthetic bacteria as strains, R. rubrum KS-301 was turned out a better strain. And result of experiment in which glucose and sodium lactate, components of wastewater, were used limiting substrates, showed that the productivity of hydrogen was indifferent with the kind of substrates. In batch experiments using free cells and immobilized whole cells, the decrease in hydrogen productivity was observed in the latter case. From the results of these experiments, specific growth rate of cells, specific utilization rate of glucose, and specific production rate of hydrogen were calculated. And each rate was expressed in the form of Monod equation of which parameters were estimated. Also the optimum condition of hydrogen production for free cells was $30^{\circ}C$, pH 7, and 12,000 Lux, and the optimum immobilized condition was as follows: initial immobilized cell concentration 1.0g/L, sodium alginate concentration 2% and light intensity 12,000 Lux.

• 대한환경공학회지
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• 제28권9호
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• pp.911-916
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• 2006

혐기성 미생물에 의한 수소 생산에 있어서 기질 농도와 HRT의 영향에 대하여 3계열로 구분하여 실험을 수행하였다. 계열 I는 HRT가 8시간에서 기질농도를 3에서 27 g-glucose/L로 증가시키면서 실험을 수행하였고, 계열 II는 HRT가 16시간, 계열 3은 HRT가 24시간으로 설정하여 실험을 수행하였다. 연구결과, 수소 생성 수율에 미치는 HRT와 기질 농도의 영향에 대하여 표면분석법에 의하여 분석하였다. 최대 수소 생성 수율은 기질농도 15.4 g/L 및 HRT 9.6시간에서 2.05 mol $H_2/mol$ 글루코오스의 값을 구할 수 있었다. 2 mol $H_2/mol$ 글루코오스의 수소 생성 수율을 얻기 위한 기질농도 및 HRT는 각각 $13{\sim}17$ g/L 및 $5{\sim}14$시간임을 알 수 있었다. 글루코오스의 소모에 따라 유기산의 농도는 증가하였고, 주요 대사산물은 아세트산과 부틸산이었다.

• 한국균학회지
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• 제30권2호
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• pp.99-103
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• 2002

느타리버섯 봉지재배시 살균 온도 및 시간에 따른 배지의 pH와 수분함량 변화, 균사생장 및 자실체 생육 등을 비교한 결과를 보고하고자 한다. 본 시험의 품종은 춘추 느타리 2호와 수한느타리 1호이고 시험배지는 미루나무톱밥 + 폐면 + 비트펄프(40 : 40 : 20%, v/v)와 미루나무톱밥 + 면실피 + 비트펄프(40 : 40 : 20%, v/v)를 사용하였다. 살균 후 배지의 수분함량은 폐면 혼합배지는 저온 살균에서는 1.8% 증가한 반면 면실피 혼합배지는 저온 살균에서 4.1% 감소하였고, 상압 살균과 고압 살균처리는 거의 변화가 없었다. pH는 살균온도가 높을수록 감소량이 많아 저온 살균($60^{\circ}C$, 12시간)에서는 거의 변화가 없었으나 상압 살균 ($100^{\circ}C$, 6시간) 보다 고압 살균 ($121^{\circ}C$, 90분)에서 감소량이 많았다. 균사배양 및 자실체 생육일수는 저온 살균에서 균사밀도는 가장 낮았으며 배양일수도 가장 길었다. 2주기까지의 수량은 춘추느타리 2호는 폐면 혼합배지의 저온 살균처리에서 가장 낮았으며 그 밖의 처리는 통계적 유의성은 없었고, 생물학적 효율은 면실피 혼합배지를 고압 살균했을 때 96.6%로 가장 높았다. 수한느타리 1호는 면실피 혼합배지의 상압 살균 처리에서 각각 수량 259.1g/pot, 생물학적 효율 94.9%로 가장 높았다. 또한 춘추느타리 2호는 균사 배양 완료 후 배지 경도와 수량과는 고도의 정의 상관관계이며 수한느타리 1호는 배지경도가 지나치게 낮거나 높으면 수량이 감소하는 경향이었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.146-147
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• 2011

Processing a large area substrate for liquid crystal display (LCD) or solar panel applications in a capacitively coupled plasma (CCP) reactor is becoming increasingly challenging because of the size of the substrate size is no longer negligible compared to the wavelength of the applied radio frequency (RF) power. The situation is even worse when the driving frequency is increased to the Very High Frequency (VHF) range. When the substrate size is still smaller than 1/8 of the wavelength, one can obtain reasonably uniform process results by utilizing with methods such as tailoring the precursor gas distribution by adjustingthrough shower head hole distribution or hole size modification, locally adjusting the distance between the substrate and the electrode, and shaping shower head holes to modulate the hollow cathode effect modifying theand plasma density distribution by shaping shower head holes to adjust the follow cathode effect. At higher frequencies, such as 40 MHz for Gen 8.5 (2.2 m${\times}$2.6 m substrate), these methods are not effective, because the substrate is large enough that first node of the standing wave appears within the substrate. In such a case, the plasma discharge cannot be sustained at the node and results in an extremely non-uniform process. At Applied Materials, we have studied several methods of modifying the standing wave pattern to adjusting improve process non-uniformity for a Gen 8.5 size CCP reactor operating in the VHF range. First, we used magnetic materials (ferrite) to modify wave propagation. We placed ferrite blocks along two opposing edges of the powered electrode. This changes the boundary condition for electro-magnetic waves, and as a result, the standing wave pattern is significantly stretched towards the ferrite lined edges. In conjunction with a phase modulation technique, we have seen improvement in process uniformity. Another method involves feeding 40 MHz from four feed points near the four corners of the electrode. The phase between each feed points are dynamically adjusted to modify the resulting interference pattern, which in turn modulate the plasma distribution in time and affect the process uniformity. We achieved process uniformity of <20% with this method. A third method involves using two frequencies. In this case 40 MHz is used in a supplementary manner to improve the performance of 13 MHz process. Even at 13 MHz, the RF electric field falls off around the corners and edges on a Gen 8.5 substrate. Although, the conventional methods mentioned above improve the uniformity, they have limitations, and they cannot compensate especially as the applied power is increased, which causes the wavelength becomes shorter. 40 MHz is used to overcome such limitations. 13 MHz is applied at the center, and 40 MHz at the four corners. By modulating the interference between the signals from the four feed points, we found that 40 MHz power is preferentially channeled towards the edges and corners. We will discuss an innovative method of controlling 40 MHz to achieve this effect.

• Korean Chemical Engineering Research
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• 제50권5호
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• pp.879-884
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• 2012

본 실험에서는 Aspergillus niger NRRL 567의 고체배양을 이용한 구연산 생산 시, 물리/화학적 발효 조건인 배양 온도, 배지 pH, 접종 농도 및 수분 함량이 구연산 생산에 미치는 영향을 단일변수(one-factor-at-a-time)와 반응표면 분석법(surface response methodology)을 이용하여 순차적 최적화를 수행하였다. 단일변수 최적화의 경우, A. niger에 의한 구연산 생산은 물리/화학적 발효 조건에 의해 영향을 받으며, 발효 온도 $30^{\circ}C$, 영양 배지 pH 7.1, 수분 함량 75%와 접종 농도 $4.0{\times}10^6$ spores/ml에서 최대 구연산 생산인 98.2 g/kg DPM (dry peat moss)을 보였다. 단일변수 최적화에 근거하여 반응표면 분석법을 도입하여 2차 최적화를 수행했을 경우, 배지 pH와 수분 함량이 구연산 생산에 유의한 영향을 주었으며 온도 $26.5^{\circ}C$, 영양 배지 pH 9.9, 수분 함량 75.1%와 접종 농도 $6.0{\times}10^6$ spores/ml에서 최대 구연산 생산인 118.8 g/kg DPM가 얻어졌다. 이는 최적화 이전의 대조군에 비해 구연산 생산이 1.6배 증가한 결과이다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1806-1808
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• 1999

The electrical and physical characteristics of MgO and Pt thin-films on Si substrate, deposited by r.f magnetron sputtering. It were analyzed with annealing condition($1000^{\circ}C$ for 120 min) by four point probe, a-step, SEM and XRD. Until $1000^{\circ}C$ of annealing temperature, MgO medium layer had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. In the analysis of properties of Pt-RTD, TCR value had $3927ppm/^{\circ}C$ and liner in the temperature range of room temperature ${\sim}400^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.2105-2107
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• 2004

In this study, Spiral inductors on the $SiO_2$/Si(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of 2 ${\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to 60 ${\mu}m$ and from 20 to 70 ${\mu}m$, respectively. Inductance and Q factor dependent on the RF frequency were investigated to analyze performance of inductor arrays. Also, We recommend that the reasonable Q-factors, spec's turns and thickness of the coil for inductors cab be set to be ideal condition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.125-125
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• 2009

In this paper, we have investigated about MgO thin films on Si(100) substrate by RF magnetron Sputtering. MgO thin films were affected by RF input power, gas pressure, gas composition, and substrate temperatures. So, we focused on most effective RF input power in deposition condition. Thickness of MgO thin films was measured by surface profiler. And structural analysis carried out by X-ray Diffraction(XRD). physical characteristic and thickness of thin films changed with RF input power.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 센서 박막재료
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• pp.57-60
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• 2001

The characterization of organic Metal/Insulator/Metal(MIM) devices were investigated from LB films. The physicochemical properties of the LB films were by UV absorption spectrum and AFM. We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 2, 10, 30[mN/ml The stable images are probably due to a strong interaction between the monolayer film and glass substrate. We are unable to obtain molecule resolution in images of the films but did see a marked contrast between images of the bare substrate and those with the network structure film deposited onto it.