• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.85-87
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• 2009

Despite the success of $Cu(In,Ga)Se_2$ (CIGS) based PV technology now emerging in several industrial initiatives, concerns about the cost of In and Ga are often expressed. It is believed that the cost of those elements will eventually limit the cost reduction of this technology. one candidate to replace CIGS is $Cu_2ZnSnSe_4$ (CZTSe), fabricated by co-evaporation technique. Effects of substrate temperature of $Cu_2ZnSnSe_4$ absorber layer on the performance of thin films solar cells were investigated. As substrate temperature increased, the grain size of $Cu_2ZnSnSe_4$ films increased presumably. At a optimal condition of substrate temperature is $320^{\circ}C$, the solar cell shows a conversion efficiency of 1.79% with $V_{OC}$ of 0.213V, JSC of $16.91mA/cm^2$ and FF of 49.7%.

• Journal of Applied Biological Chemistry
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• 제48권3호
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• pp.113-119
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• 2005

O-methylation mediated by O-methyltransferases (OMTs) is a common modification in natural product biosynthesis and contributes to diversity of secondary metabolites. OMTs use phenylpropanoids, flavonoids, other phenolics and alkaloids as substrates, and share common domains for S-adenosyl-L-methionine (AdoMet) and substrate binding. We searched Arabiposis genome and found 17 OMTs genes (AtOMTs). AdoMet- and substrate-binding sites were predicted. AdoMet binding domain of AtOMTs is highly conserved, while substrate-binding domain is diverse, indicating use of different substrates. In addition, expressions of six AtOMT genes in response to UV and in different tissues were investigated using real-time quantitative reverse transcriptase-polymerase chain reaction. All the AtOMTs investigated were expressed under normal growth condition and most, except AtOMT10, were induced after UV illumination. AtOMT1 and AtOMT8 were expressed in all the tissues, whereas AtOMT10 showed flower-specific expression. Analysis of these AtOMT gene expressions could provide some clues on AtOMT involvement in the cellular processes.

• 한국정보통신학회논문지
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• 제16권10호
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• pp.2247-2252
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• 2012

본 논문은 동시진공증발법(co-evaporation method)으로 CIGS 박막(thin film)을 제작을 하였다. 제작과정 중 기판온도(substrate temperature)변화와 Ga/(In+Ga) 조성비(composition ratio) 변화에 따른 저항율(resistivity) 및 흡수스펙트럼(absorbance spectra)을 측정하였다. 기판온도가 상승하면 저항율이 감소하였으며, Ga/(In+Ga) 조성비가 0.30에서 0.72까지 증가됨에 따라 밴드갭(band gap)이 1.26eV, 1.30eV, 1.43eV,1.47eV로 증가됨을 알 수 가 있었다. 동일한 조건에서 조성비를 증가하므로써 두께가 증가되었으며 저항율은 감소하였다. 본 실험을 통하여 CIGS 박막을 제작하면 광흡수률(optical absorbance ratio) 및 광전류(optical current)가 증가 될 것으로 예측할 수가 있다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1516-1518
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• 1998

$YBa_2Cu_3O_x$(Yl23) Superconducting thick films on $Y_2BaCuO_5$(Y211) substrate were Prepared by surface diffusion process between $BaCuO_2$+CuO composite coating powder and a Y2ll substrate. X-ray diffraction shows that the Yl23 layer onto Y2ll substrate is the orthorhombic crystal structure. The specimen heated at $940^{\circ}C$ for 2h showed the maximum $J_c$ fo 500A/$cm^2$. Based on optimal condition, the superconducting fault current limiter(FCL) having a current limiting area 1mm wide and 66mm long was fabricated on Y211 substrate. A typical current limiting waveform was measured. When a voltage of 3V was applied, the fault current with a peak of 15A was limited to about 0.11A.

• 한국정밀공학회지
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• 제28권2호
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• pp.193-201
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• 2011

Clamp type transferring mechanism for package substrate's wet processes was newly developed instead of conventional roller type transferring mechanism. Clamp type transferring mechanism has the advantages of reducing the panel deflection and of minimizing the contact problem between the panel and the transferring mechanism. Individual clamp of the mechanism has two distinct mechanical functions which are perfectly fixing a panel during the transferring and generating adequate tension for the panel. To determine the mechanical parameters of the clamp, panel deflection simulation was conducted and the result was verified by the panel deflection measurement. Also, fixing angle of a clamp could be determined by the free body force analysis of individual clamp. Finally clamp type transferring mechanism was actually manufactured and the transferring performance was verified during the water spraying condition of the package substrate's wet processes.

• Progress in Superconductivity
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• 제12권1호
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• pp.68-73
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• 2010

Y123 films have been deposited on $LaAlO_3$ (100) single-crystal and IBAD substrates by spray pyrolysis method using nitrate precursors. Ultrasonic atomization was adopted to decrease the droplet size, spraying angle and its moving velocity toward substrate for introducing the preheating tube furnace in appropriate location. A small preheating tube furnace was installed between spraying nozzle and substrate for fast drying and enhanced decomposition of precursors. C-axis oriented films were obtained on both LAO and IBAD substrates at deposition temperature of around $710{\sim}750^{\circ}C$ and working pressures of 10~15 torr. Thick c-axis epitaxial film with the thickness of $0.3{\sim}0.6\;{\mu}m$ was obtained on LAO single-crystal by 10 min deposition. But the XRD results of the film deposited on IBAD template at same deposition condition showed that the buffer layers of the IBAD metal substrate was affected by long residence of metal substrate at high temperature for YBCO deposition.

• Progress in Superconductivity
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• 제3권1호
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• pp.95-98
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• 2001

Recently, NiO films have been studied as a buffer layer to fabricate the superconductor with preferred orientation and as a diffusion barrier to prevent the reaction between superconductor and textured nickel substrate . We fabricated NiO films on textured Ni substrate by thermal oxidation with various variables of temperature, oxidation time, atmosphere, and cooling rate. We investigated the alignment of NiO films by XRD and pole figure and the microstructures by SEM. (200) <001> alignment of NiO film was observed at the oxidation condition of $1200^{\circ}C$ far 10min and slow cooling in O2 atmosphere. During the process in Ar atmosphere, we could also observe the thermal faceting which affects the alignment of NiO alms on Ni substrate.

• 상하수도학회지
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• 제8권2호
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• pp.25-34
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• 1994

In this research, investigations were made on the effect of type and load of organic substrate on phosphorus release. Reactors of three different sizes were operated, being fed on five kinds of organic substrates. The quantitative analyses were made on phosphorus release and substrate utilization under anaerobic condition. The molar ratios of the uptaken organic substrate to the released phosphorus were 0.5 with acetate, 0.6 with glucose, 0.8 with glucose/acetate, and 1.2 with glucose/acids, respectively. The phosphorus release was inhibited at the higher organic load than the normal at stead state. Both acetate and acids/glucose enhanced phosphorus release- as well as uptake-rate, however, the complete phosphorus removal was achieved after the microbial adaptation to the new environment. In case with acetate, operation was hampered by the poor sludge settleability and phosphorus uptake was not enough although the phosphorus release was active. But with milk/starch, the phosphorus release and uptake was well developed even though phosphorus release was not comparatively high. From this study, it was concluded that organic substrates, such as glucose seemed to be converted fatty acids after fast bio-sorption, followed by concurrent uptake of these acids by excess phosphorus removing bacteria.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1243-1245
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• 1994

SiN films were deposited in $Si_2H_6$(99.9%), $NH_3$(99.99%) gas mixture with carrier gas $N_2$ on Si substrate by ArF Excimer Laser CVD. SiN film deposition conditions that are substrate temperature and Laser average power were varied in order to investigate the dependence of SiN film on the condition. A post-deposition anneal was performed to examine variation of fixed charge density in the films. The deposition rate was increased as the substrate temperature and Laser power were increased during film deposition. The refractive index was increased with increasing substrate temperature, but it didn't have the dependence on Laser power. The fixed charge density was decreased when a post-deposition anneal was performed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1720-1723
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• 2000

Boron doped conducting diamond thin film were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was controlled from 0ppm to $10^4$ppm (B/C). The Si substrate was tilted ca. 10$^{\circ}$ to make Si substrate have different height and temperature. Experimental results show that same condition but different temperature of Si substrate by height made different crystalline of diamond thin film. There were appeared 3$\sim$4 step of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at 1334$cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near 1550$cm^{-1}$.