Fabrication and characterization of nickel oxide films on textured nickel substrate for a superconductor buffer layer

초전도 선재의 중간 반응 방지막으로써 Ni 기판위에 제조된 NiO 막의 특성 분석

  • Park, Eunchul (Electronic and Optical Materials Laboratory, Dept. of Mat. Sci. & Eng., Korea Advanced Institute of Science and Technology) ;
  • Inki Hong (Electronic and Optical Materials Laboratory, Dept. of Mat. Sci. & Eng., Korea Advanced Institute of Science and Technology) ;
  • Hyunsuk Hwang (Electronic and Optical Materials Laboratory, Dept. of Mat. Sci. & Eng., Korea Advanced Institute of Science and Technology) ;
  • Taehyun Sung (Korea Electric Power Research Institute) ;
  • Kwangsoo No (Electronic and Optical Materials Laboratory, Dept. of Mat. Sci. & Eng., Korea Advanced Institute of Science and Technology)
  • Published : 2001.01.01

Abstract

Recently, NiO films have been studied as a buffer layer to fabricate the superconductor with preferred orientation and as a diffusion barrier to prevent the reaction between superconductor and textured nickel substrate . We fabricated NiO films on textured Ni substrate by thermal oxidation with various variables of temperature, oxidation time, atmosphere, and cooling rate. We investigated the alignment of NiO films by XRD and pole figure and the microstructures by SEM. (200) <001> alignment of NiO film was observed at the oxidation condition of $1200^{\circ}C$ far 10min and slow cooling in O2 atmosphere. During the process in Ar atmosphere, we could also observe the thermal faceting which affects the alignment of NiO alms on Ni substrate.

Keywords