• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.317-330
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• 1999

The texture of electrodeposits changes from the orientation that places the lowest energy crystal facets parallel to the substrate under a condition of low ion concentration adjacent to the deposit, to the orientation that places the higher energy crystal facets parallel to the substrate as the ion concentration adjacent to the deposit increases. The electrodeposits have peculiar surface morphologies and microstructures depending on their textures, which in turn may affect their mechanical properties even when they are obtained in a similar electrolysis condition. The electrodeposits undergo recrystallization, when annealed. The recrystallization texture may be different from the deposition texture. These phenomena have been discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.4
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• pp.145-150
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• 2004

We have investigated the structural, electrical and optical properties of Al-doped ZnO (AZO) thin films grown on glass substrate by pulsed DC magnetron sputtering as functions of pulse frequency and substrate temperature. A highly c-axis oriented AZO thin film is grown in perpendicular to the substrate when pulse frequency of 30 kHz and substrate temperature of $400^{\circ}C$ was applied. Under this optimized growth condition, the resistivity of AZO thin films exhibited $7.40\times 10^{-4}\Omega \textrm{cm}$. This indicated that the decrease of film resistivity resulted from the improvement of film crystallinity. The optical transmittance spectra of the films showed a very high transmittance of 85∼90 % in the visible wavelength region and exhibited the absorption edge of about 350 nm. The results show the potential application for transparent conductivity oxide (TCO) thin films.

• Transactions on Electrical and Electronic Materials
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• v.13 no.5
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• pp.245-247
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• 2012

In this study, ZnO films have been grown on PES (polyethersulfone) of flexible polymer substrate by PLD (pulsed laser deposition) and characterized for crystalline and optical properties. Growing conditions were changed with substrate temperatures ranging from 50 to $200^{\circ}C$ and laser power density ranging from 0.2 to $0.4J/cm^2$. When ZnO thin films are deposited at low temperature with a small laser power density, the (002) peaks of XRD to signify the crystal quality of ZnO thin films appear to be very weak and the (101) peaks to signify the chemical composition of oxygen and zinc are strong. The (002) peaks increase with the substrate temperature and laser power density because the energy needed for the supply of the combination regarding zinc and oxygen has increased. In this study, the best condition for growing ZnO thin film on PES is at a substrate temperature of $200^{\circ}C$ and with a laser density of $0.3J/cm^2$. The characteristics of PL were measured by UV and green luminescence.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.33-38
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• 2013

In this study, both a finite element analysis and an experimental analysis are executed to investigate the mechanical characteristics of dielectric material effects on warpage. Also, viscoelastic material properties are measured by DMA and are considered in warpage simulation. A finite element analysis is done by using both thermal elastic analysis and a thermo-viscoelastic analysis to predict the nonlinear effects. For experimental study, specimens warpage of non-symmetric structure with body size of $22.5{\times}22.5$ mm, $37.5{\times}37.5$ mm and $42.5{\times}42.5$ mm are measured under the reflow temperature condition. From the analysis results, experimental warpage is not similar to FEA results using thermal elastic analysis but similar to FEA results using thermo-viscoelastic analysis. Also, its effect on substrate warpage is increased as core thickness is decreased and body size is getting larger. These FEA and the experimental results show that the nonlinear characteristics of dielectric material play an important role on substrate warpage. Therefore, it is strongly recommended that non-linear behavior characteristics of a dielectric material should be considered to control warpage of FCBGA substrate under conditions of geometry, structure and manufacturing process and so on.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.9
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• pp.909-913
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• 2013

Various types of large substrate handling robots are used in the thin file solar cell manufacturing line as well as LCD or PDP production line. Because the robot handles the heavy substrate at high speed, there are some issues such as vibration control and the optimal design of arms and forks. As the substrate becomes larger and heavier, robot systems are also larger and the vibration issue of the robot end-effector becomes more important. In the paper, we established the robot modeling and the control architecture including the flexible part such as forks. Then, we performed dynamic simulation in the various condition and analyzed the characteristics of the fork vibration. We can reduce the vibration using the trajectory planning and input shaping algorithm and it was proved by experiment.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.144-148
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• 1999

We have studied the deposition characteristics of thick silicon dioxide film on Si substrate by $O_3$/TEOS APCVD(Atmospheric Pressure Chemical Vapor Deposition). The effect of deposition parameters such as the distance between showerhead and substrate, deposition temperature, TEOS flow rate and $O_3$/TEOS ratio on deposition rate, surface morphology, and properties of films as investigated. As deposition temperature increased, deposition rate decreased but the surface morphology and adhesion of film to substrate improved. As the distance between showerhead and substrate decreased, the deposition rate increased. Etching rate using the BOE increased as TEOS flow rate increased, but was independent of$ O_3$/TEOS ratio. Deposition rate of $5\mu\textrm{m}$/hour was obtained under the condition that the distance between showerhead and substrate was 5mm and the deposition temperature was $370^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.32 no.6
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• pp.709-716
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• 1999

Ceramic is select for an alternative substrate material for high-speed circuits due to its low-thermal expansion. As, in this study, ceramic was prepared by ISG (interlayer sol-gel) process using metal salts and a metal alkoxide as the starting materials. Generally ceramic substrate is used electroless copper plating for the metallization. But it has been indicate weakely the adhesion strength between the substrate and copper layer. Therefore, this research, using the ISG process on the preparation of homogeneous and possible preparation at law temperature fabricated sol solution. Using of the dip coating method was coated for the purpose of giving the anchoring effect on the coating layer and enhancing the adhesion strength between the $Al_2$O$_3$ substrate and copper layer. This study examined primary the characteristic of the sol making condition and differential thermal analysis (DTA) X-ray diffraction (XRD) were mearsured to identify the crystal phase of heat treatment specimens. The morphology of the coated films were studied by scanning electron microscopy(SEM). As a resurt, XRD analysis was obtained patterns of $\alpha$-cordierite after heat-treatment about 2 hours at $1000^{\circ}C$. SEM analysis could have seen a large number of voids on coated film. The more contants of$ Al_2$$O_3$ Wt% was increased the more voids was advanced. Peel adhesion strength has a maximum in the contants of the TEOS:ANE of 1:0.7 mole%. In this case, adhesion strength has been measured 1150gf, peel adhesion strength were about 10 times more than uncoated of the ceramics film.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2013.05a
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• pp.329-331
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• 2013

The salt damage resistance of waterproofing membrane was evaluated on the cracked mortar substrate. The types of specimens are urethane, acrylic waterproofing membrane, and no coating mortar substrate. After these specimens were cured by water curing for 4 weeks, they were cured by atmospheric curing at 20±2Co for 8 weeks. The salt water immersion test was carried out by following KS F 2737, and the penetration depth of chloride ion into substrate was measured in 1, 4, 8, and 13 weeks. As a result, in the case of non coating specimen, the chloride ion penetrated within one week. In the coated specimens, a regardless of the membrane type, the chloride ion did not penetrate during 13 weeks-tests on condition that the cracked width of substrate is less than 0.3mm. Also, the penetration speeds of the coated specimens were lower than that of non coating specimen. Therefore, our results reached a conclusion that waterproofing membrane has high salt damage resistance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.267-273
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• 1998

The band structures of $Si_{1-x}Ge_x$ layers grown on $Si_{1-y}Ge_y$ substrate are calculated using k$\cdot$p and strain Hamiltonians. The hole drift mobilities in the plane direction are then calculated by taking into account the screening effect and the density-of-states of the impurity band. When $Si_{1-x}Ge_x$ is grown on Si substrate, the mobilities of (110) and (111) $Si_{1-x}Ge_x$ layers are larger than that of (001) $Si_{1-x}Ge_x$. However, due to the large defect and surface scattering, (110) and (111) $Si_{1-x}Ge_x$ layers may not be useful for the development of the fast device. Meanwhile, when Si is grown on $Si_{1-y}Ge_y$ substrate, the mobilities of (001) and (110) Si layers are greatly enhanced. Based on the amount of defect and the surface scattering, it is expected that Si grown on (001) $Si_{1-y}Ge_y$ substrate, where the Ge contents is larger than 10%(y>0.1), has the highest mobility.

• Journal of the Korean institute of surface engineering
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• v.54 no.3
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• pp.133-138
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• 2021

Ternary Ti-X-N coatings, where X = Al, Si, Cr, O, etc., have been widely used for machining tools and cutting tools such as inserts, end-mills, and etc. Ti-Al-N-O coatings were deposited onto silicon wafer and WC-Co substrates by a cathodic arc evaporation (CAE) technique at various negative substrate bias voltages. In this study, the influence of substrate bias voltages during deposition on the microstructure and mechanical properties of Ti-Al-N-O coatings were systematically investigated to optimize the CAE deposition condition. Based on results from various analyses, the Ti-Al-N-O coatings prepared at substrate bias voltage of -80 V in the process exhibited excellent mechanical properties with a higher compressive residual stress. The Ti-Al-N-O (-80 V) coating exhibited the highest hardness around 30 GPa and elastic modulus around 303 GPa. The improvement of mechanical properties with optimized bias voltage of -80 V can be explained with the diminution of macroparticles, film densification and residual stress induced by ion bombardment effect. However, the increasing bias voltage above -80 V caused reduction in film deposition rate in the Ti-Al-N-O coatings due to re-sputtering and ion bombardment phenomenon.