• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.373-376
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• 2009

In this paper we report upon an investigation into the effect of DC bias voltage on the electrical and optical properties of Gallium doped zinc oxide (GZO) film. GZO films were deposited on glass substrate without substrate temperature by RF magnetron sputtering from a ZnO target mixed with 5 wt% $Ga_{2}O_{3}$. we investigated sample properties of bias voltage change in 0 to -60 V. We were able to achieve as low as $5.89{\times}10^{-4}{\Omega}cm$ and transmittance over 88 %. without substrate heating.

• Korean Journal of Materials Research
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• v.24 no.7
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• pp.344-350
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• 2014

Metal films (i.e., Ti, Al and SUH310S) were prepared in a magnetron sputtering apparatus, and their cross-sectional structures were investigated using scanning electron microscopy. The apparatus used consisted of a cylindrical metal target which was electrically grounded, and two anode rings attached to the top and to the bottom of the target. A wire was placed along the center-line of the cylindrical target to provide a substrate. When the electrical potential of the substrate was varied, the metal-film formation rate depended on both the discharge voltage and the electrical potential of the substrate. As we made the magnetic field stronger, the plasma which appeared near the target collected on the plasma wall surface and thereby decreased the bias current. The bias current on the conducting wire was different from that for cation collection. The bias current decreased because the collection of cations decreased when we increased the magnetic-coil current. When the substrate was electrically isolated, the films deposited showed a slightly coarse columnar structure with thin voids between adjacent columns. In contrast, in the case of the grounded substrate, the deposited film did not show any clear columns but instead, showed a densely-packed granular structure. No peeling region was observed between the film and substrate, indicating good adhesion.

• Journal of the Korean institute of surface engineering
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• v.46 no.1
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• pp.29-35
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• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.1 s.343
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• pp.1-6
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• 2006

This paper proposes substrate-bias voltage generator to reduce leakage power consumption of digital logic circuits operating at supply voltage of 0.5V. Proposed substrate-bias voltage generator is composed of VSS and VBB generator. The former circuit produces negative voltage and supplies its output voltage for VBB generator. As a result VBB generator develops much lower negative voltage than that of conventional one. Proposed circuit is fabricated using 0.18um 1Poly-6Metal CMOS process and measurement result demonstrated stable operation with substrate-bias voltage of -0.95V.

• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.293-297
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• 1993

Exchange coupled $NiFe/TbCo/Sio_{2}$ thin films for magnetoresistive heads were sputter deposited using RF diode sputtering method, and their magnetic characteristics were measured. TbCo films were deposited using a composite target, which is composed of Tb chips epoxied on a Co target. NiFe($400\AA$)/TbCo($1500\AA$)/$SiO_{2}$($500\AA$) films were deposited using a TbCo target having 30 % of Tb area ratio, which showed 25 Oe of the exchange field without substrate bias and 12 Oe with -55 V of substrate bias. The effective in-plane coercivities of the three layer films fabricated with less than -55 V of substrate bias were approximately proportional to the perpendicular coercivities of the TbCo layer only. The films fabricated with a Theo target of 28 % area ratio showed the same trend. However, the exchange field decreased to 4 Oe without the substrate bias and 7 Oe with -55 V of substrate bias. In the films fabricated with 1000 W of power and the target of 36 % area ratio exhibited 100 Oe of exchange field and 3 Oe of coercivity. As the thickness of NiFe layer increased, the exchange field decreased.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.182-186
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• 1997

Diamond-like carbon(DLC) films were deposited on silicon substreates by using an RF plasmaassisted CVD apparatus; the effects of deposition conditions such as CH4 gas pressure and substrate bias voltage on DLC film friction and wear were examined in both friction and scratch tests. In friction tests critical loads at which the friction coefficient increases abruptly depend on substrate bias voltages: critical loads deposited at a bias voltage of -100 V exceed those deposited at other bias voltages. Critical loads are correlated with DLC film hydrogen content. Critical DLC film loads in scratch tests depended considerably less than in friction tests. The friction coefficient of DLC films depends on neither substrate bias voltage nor CH4 gas pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.408-411
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure, discharge power and doping amounts of Al on the electrical, optical and morphological properties were investigated experimentally. The effect of bias voltage on the electrical properties of ZnO thin film were also studied. Films with lowest resistivity of $5.4{\times}10^{-4}\;{\Omega}-cm$ have been achieved in case of films deposited at 1mtorr, $400^{\circ}C$ with a substrate bias of +10V for 840nm in film thickness.

• Journal of the Korean Electrochemical Society
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• v.6 no.4
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• pp.261-265
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• 2003

The heat treatment process of thin film microbatteries manufacturing processes has several Problems. This study, without heat treatment, considered the characteristics of $LiCoO_2$ thin films deposited by bais sputtering method inducing the structural change of the thin film. The properties of deposited $LiCoO_2$ thin films such as crystal structure, morphology, and discharge capacity were observed by various analysis methods. Among $LiCoO_2$ thin films deposited by substrate bias $voltage(V_b)$, the one deposited by substrate bias voltage of -50V had the highest initial discharge capacity of about $60{\mu}Ah/cm^2{\mu}m.$ We confirmed that $LiCoO_2$ thin film could be used as cathode material of lithium thin film microbatteries without annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.258-258
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• 2010

In this work, back bias effects in the program of the silicon-oxide-nitride-oxide-silicon (SONOS) cell using two-step pulse sequence, are investigated. Two-step pulse sequence is composed of the forward biases for collecting the electrons at the substrate terminal and back bias for injecting the hot electrons into the nitride layer. With an aid of the back bias for electron injection, we obtain a program time as short as 600 ns and an ultra low-voltage operation with a substrate voltage of -3 V.

• Journal of the Korean institute of surface engineering
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• v.41 no.6
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• pp.287-291
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• 2008

Reactively magnetron sputtered TiN films were deposited on Si wafers under varying bias voltage and characterized by X-ray diffraction, field-emission scanning electron microscopy and Nanoindentation. The films deposited under an Ar + $N_2$ atmosphere exhibited a mixed (200)-(111) orientation with a strong (200) texture, which subsequently changed to a strong (111) texture with increasing bias voltage. The changes in texture and grain size of the TiN thin films are due to one or a combination of factors such as strain energy, surface free energy, surface diffusivity and adatom mobility. The influence of each factor depends on the processing conditions. The average deposition rate and grain size were calculated from FE-SEM images of the films indicating that the deposition rate was lower at the films deposited under bias voltage.