• Title/Summary/Keyword: sub-threshold

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Contrast Image Enhancement Using Multi-Histogram Equalization

  • Phanthuna, Nattapong;cheevasuwit, Fusak
    • International Journal of Advanced Culture Technology
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    • v.3 no.2
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    • pp.161-170
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    • 2015
  • Mean separated histogram equalization in order to preserve the original mean brightness has been proposed. To provide the minimum mean brightness error after the histogram modification, the input image's histogram is successively divided by the factor of 2 until the mean brightness error is satisfied the defined threshold. Then each divided group or sub-histogram will be independently equalized based on the proportional input mean. To provide the overall minimum mean brightness error, each group will be controlled by adding some certain pixels from the adjacent grey level of the next group for giving its mean near by the corresponding the divided mean. However, it still exists some little error which will be put into the next adjacent group. By successive dividing the original histogram, we found that the absolute mean brightness error is gradually decreased when the number of group is increased. Therefore, the error threshold is assigned in order to automatically dividing the original histogram for obtaining the desired absolute mean brightness error (AMBE). This process will be applied to the color image by treating each color independently.

Highly Robust Bendable a-IGZO TFTs on Polyimide Substrate with New Structure

  • Kim, Tae-Woong;Stryakhilev, Denis;Jin, Dong-Un;Lee, Jae-Seob;An, Sung-Guk;Kim, Hyung-Sik;Kim, Young-Gu;Pyo, Young-Shin;Seo, Sang-Joon;Kang, Kin-Yeng;Chung, Ho-Kyoon;Berkeley, Brain;Kim, Sang-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.998-1001
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    • 2009
  • A new flexible TFT backplane structure with improved mechanical reliability is proposed. Amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors based on this structure have been fabricated on a polyimide substrate, and the resultant mechanical durability has been evaluated in a cyclic bending test. The panel can withstand 10,000 bending cycles at a bending radius of 5 mm without any noticeable TFT degradation. After 10K bending cycles, the change of threshold voltage, mobility, sub-threshold slope, and gate leakage current were only -0.22V, -0.13$cm^2$/V-s, -0.05V/decade, and $-3.05{\times}10^{-13}A$, respectively.

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Computing-Inexpensive Matrix Model for Estimating the Threshold Voltage Variation by Workfunction Variation in High-κ/Metal-gate MOSFETs

  • Lee, Gyo Sub;Shin, Changhwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.1
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    • pp.96-99
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    • 2014
  • In high-${\kappa}$/metal-gate (HK/MG) metal-oxide-semiconductor field-effect transistors (MOSFETs) at 45-nm and below, the metal-gate material consists of a number of grains with different grain orientations. Thus, Monte Carlo (MC) simulation of the threshold voltage ($V_{TH}$) variation caused by the workfunction variation (WFV) using a limited number of samples (i.e., approximately a few hundreds of samples) would be misleading. It is ideal to run the MC simulation using a statistically significant number of samples (>~$10^6$); however, it is expensive in terms of the computing requirement for reasonably estimating the WFV-induced $V_{TH}$ variation in the HK/MG MOSFETs. In this work, a simple matrix model is suggested to implement a computing-inexpensive approach to estimate the WFV-induced $V_{TH}$ variation. The suggested model has been verified by experimental data, and the amount of WFV-induced $V_{TH}$ variation, as well as the $V_{TH}$ lowering is revealed.

Design on Optimum Control of Subthreshold Current for Double Gate MOSFET (DGMOSFET에서 최적의 서브문턱전류제어를 위한 설계)

  • Jung, Hak-Kee;Na, Young-Il;Lee, Jong-In
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.2
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    • pp.887-890
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    • 2005
  • The double gate(DG) MOSFET is a promising candidate to further extend the CMOS scaling and provide better control of short channel effect(SCE). DGMOSFETs, having ultra thin updoped Si channel for SCEs control, are being validated for sub-20nm scaling, A channel effects such as the subthreshold swing(SS), and the threshold voltage roll-off(${\Delta}V_{th}$). The propsed model includes the effects of thermionic emission and quantum tunneling of carriers through the source-drain barrier. The proposed model is used to design contours for gate length, channel thickness, and gate oxide thickness.

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Effective Positive Bias Recovery for Negative Bias Stressed sol-gel IGZO Thin-film Transistors (음 바이어스 스트레스를 받은 졸-겔 IGZO 박막 트랜지스터를 위한 효과적 양 바이어스 회복)

  • Kim, Do-Kyung;Bae, Jin-Hyuk
    • Journal of Sensor Science and Technology
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    • v.28 no.5
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    • pp.329-333
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    • 2019
  • Solution-processed oxide thin-film transistors (TFTs) have garnered great attention, owing to their many advantages, such as low-cost, large area available for fabrication, mechanical flexibility, and optical transparency. Negative bias stress (NBS)-induced instability of sol-gel IGZO TFTs is one of the biggest concerns arising in practical applications. Thus, understanding the bias stress effect on the electrical properties of sol-gel IGZO TFTs and proposing an effective recovery method for negative bias stressed TFTs is required. In this study, we investigated the variation of transfer characteristics and the corresponding electrical parameters of sol-gel IGZO TFTs caused by NBS and positive bias recovery (PBR). Furthermore, we proposed an effective PBR method for the recovery of negative bias stressed sol-gel IGZO TFTs. The threshold voltage and field-effect mobility were affected by NBS and PBR, while current on/off ratio and sub-threshold swing were not significantly affected. The transfer characteristic of negative bias stressed IGZO TFTs increased in the positive direction after applying PBR with a negative drain voltage, compared to PBR with a positive drain voltage or a drain voltage of 0 V. These results are expected to contribute to the reduction of recovery time of negative bias stressed sol-gel IGZO TFTs.

Simulation and validation of flash flood in the head-water catchments of the Geum river basin

  • Duong, Ngoc Tien;Kim, Jeong Bae;Bae, Deg-Hyo
    • Proceedings of the Korea Water Resources Association Conference
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    • 2021.06a
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    • pp.138-138
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    • 2021
  • Flash floods are one of the types of natural hazards which has severe consequences. Flash floods cause high mortality, about 5,000 deaths a year worldwide. Flash floods usually occur in mountainous areas in conditions where the soil is highly saturated and also when heavy rainfall happens in a short period of time. The magnitude of a flash flood depends on several natural and human factors, including: rainfall duration and intensity, antecedent soil moisture conditions, land cover, soil type, watershed characteristics, land use. Among these rainfall intensity and antecedent soil moisture, play the most important roles, respectively. Flash Flood Guidance is the amount of rainfall of a given duration over a small stream basin needed to create minor flooding (bank-full) conditions at the outlet of the stream basin. In this study, the Sejong University Rainfall-Runoff model (SURR model) was used to calculate soil moisture along with FFG in order to identify flash flood events for the Geum basin. The division of Geum river basin led to 177 head-water catchments, with an average of 38 km2. the soil moisture of head-water catchments is considered the same as sub-basin. The study has measured the threshold of flash flood generation by GIUH method. Finally, the flash flood events were used for verification of FFG. The results of the validation of seven past independent events of flash flood events are very satisfying.

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Optimized Relay Selection and Power Allocation by an Exclusive Method in Multi-Relay AF Cooperative Networks

  • Bao, Jianrong;Jiang, Bin;Liu, Chao;Jiang, Xianyang;Sun, Minhong
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.11 no.7
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    • pp.3524-3542
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    • 2017
  • In a single-source and multi-relay amplify-forward (AF) cooperative network, the outage probability and the power allocation are two key factors to influence the performance of an entire system. In this paper, an optimized AF relay selection by an exclusive method and near optimal power allocation (NOPA) is proposed for both good outage probability and power efficiency. Given the same power at the source and the relay nodes, a threshold for selecting the relay nodes is deduced and employed to minimize the average outage probability. It mainly excludes the relay nodes with much higher thresholds over the aforementioned threshold and thus the remainders of the relay nodes participate in cooperative forwarding efficiently. So the proposed scheme can improve the utility of the resources in the cooperative multi-relay system, as well as reduce the computational complexity. In addition, based on the proposed scheme, a NOPA is also suggested to approach sub-optimal power efficiency with low complexity. Simulation results show that the proposed scheme obtains about 2.1dB and 5.8dB performance gain at outage probability of $10^{-4}$, when compared with the all-relay-forward (6 participated relays) and the single-relay-forward schemes. Furthermore, it obtains the minimum outage probability among all selective relay schemes with the same number of the relays. Meanwhile, it approaches closely to the optimal exhaustive scheme, thus reduce much complexity. Moreover, the proposed NOPA scheme achieves better outage probability than those of the equal power allocation schemes. Therefore, the proposed scheme can obtain good outage probability, low computational complexity and high power efficiency, which makes it pragmatic efficiently in the single-source and multi-relay AF based cooperative networks.

A Study on the PTC Thermistor Characteristics of Polyethylene and Polyethylene Copolymer Composite Systems in Melt and Solution Manufacturing Method (용액 및 용융 가공방법에 따른 PE 및 PE 공중합물의 PTC 서미스터 특성 연구)

  • 김재철;박기헌;남재도
    • Polymer(Korea)
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    • v.26 no.6
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    • pp.812-820
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    • 2002
  • The positive temperature coefficient (PTC) characteristics of polymer composites were investigated with the nano-sized carbon black particles using solution tasting and melt compounding methods. The polymeric PTC composites should the electrical threshold at 35 wt% for the melt compounding method and 40 wt% for the solution casting method. The ethylene vinylacetate copolymer (EVA) composite showed a gradual increase of resistance as a function of temperature and showed a maximum at the polymer molting point. The resistance of the high-density polythylene (HDPE) composite remains unchanged with temperature but started to Increase sharply near the melting point of HDPE and showed a maximum resistance at the melting point of HDPE. The dispersion of nano-sized carbon black particles was investigated by scanning electron microscopy (SEM) and low resistance after electrical threshold, and both methods exhibited a well dispersed morphology. When the electric current was applied to the PTC composites, the resistance started increasing at the curie temperature and further increased until the trip temperature was roached. Then the resistance remained stable over the trip temperature. The secondary increase started at T$\sub$m/ of matrix polymer and kept increasing up to the trip temperature.

Design of Downlink Channel for Transportable KOMPSAT Ground Station Using Sub-Carrier Signal (부 반송파를 사용하는 이동형 다목적실용위성 관제국에 대한 하향 링크 채널 설계)

  • Ahn, Sang-Il;Park, Dong-Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.3
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    • pp.313-321
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    • 2009
  • This paper describes the downlink design of a transportable small-sized KOMPSAT ground station using sub-carrier signal. Based on the analysis of the transmission modes of satellite real-time telemetry and range measurement signals, the downlink channel design of KOMPSAT ground station using sub-carrier signal was processed. By considering the threshold signal-to-noise ratio of real-time 2 kbps telemetry signal and the required signal-to-noise ratio for satellite range measurement, the small-sized KOMPSAT downlink channel with G/T value of 6.5 dB/K was designed. The real G/T of implemented ground station was proven to be 6.62 dB/K when measured using the Sun. Moreover, through interface test with KOMPSAT, the ground station has shown the required link performance for real-time telemetry acquisition using sub-carrier and was consequently evaluated to be adequate for a transportable small-sized KOMPSAT ground station.

A Multi-thresholding Approach Improved with Otsu's Method (Otsu의 방법을 개선한 멀티 스래쉬홀딩 방법)

  • Li Zhe-Xue;Kim Sang-Woon
    • Journal of the Institute of Electronics Engineers of Korea CI
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    • v.43 no.5 s.311
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    • pp.29-37
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    • 2006
  • Thresholding is a fundamental approach to segmentation that utilizes a significant degree of pixel popularity or intensity. Otsu's thresholding employed the normalized histogram as a discrete probability density function. Also it utilized a criterion that minimizes the between-class variance of pixel intensity to choose a threshold value for segmentation. However, the Otsu's method has a disadvantage of repeatedly searching optimal thresholds for the entire range. In this paper, a simple but fast multi-level thresholding approach is proposed by means of extending the Otsu's method. Rather than invoke the Otsu's method for the entire gray range, we advocate that the gray-level range of an image be first divided into smaller sub-ranges, and that the multi-level thresholds be achieved by iteratively invoking this dividing process. Initially, in the proposed method, the gray range of the object image is divided into 2 classes with a threshold value. Here, the threshold value for segmentation is selected by invoking the Otsu's method for the entire range. Following this, the two classes are divided into 4 classes again by applying the Otsu's method to each of the divided sub-ranges. This process is repeatedly performed until the required number of thresholds is obtained. Our experimental results for three benchmark images and fifty faces show a possibility that the proposed method could be used efficiently for pattern matching and face recognition.