• 전기학회논문지
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• 제58권2호
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• pp.342-348
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• 2009

This paper introduces a novel denoising algorithm for the partial-discharge(PD) signals from power apparatuses. The developed algorithm includes three kinds of specific denoising sub-algorithms. The first sub-algorithm uses the fuzzy logic which classifies the noise types in the magnitude versus phase PD pattern. This sub-algorithm is especially effective in the rejection of the noise with high and constant magnitude. The second one is the method simply removing the pulses in the phase sections below the threshold count in the count versus phase pattern. This method is effective in removing the occasional high level noise pulses. The last denoising sub-algorithm uses the grouping characteristics of PD pulses in the 3D plot of the magnitude versus phase versus cycle. This special technique can remove the periodical noise pulses with varying magnitudes, which are very difficult to be removed by other denoising methods. Each of the sub-algorithm has different characteristic and shows different quality of the noise rejection. On that account, a parameter which numerically expresses the noise possessing degree of signal, is defined and evaluated. Using the parameter and above three sub-algorithms, an adaptive complex noise rejection algorithm for the on-line PD diagnosis system is developed. Proposed algorithm shows good performances in the various real PD signals measured from the power apparatuses in the Korean plants.

• Electronic Materials Letters
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• 제14권6호
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• pp.749-754
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• 2018

Previous studies have reported on the mechanical robustness and chemical stability of flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on plastic substrates both in flat and curved states. In this study, we investigate how the polyimide (PI) substrate affects hydrogen concentration in the a-IGZO layer, which subsequently influences the device performance and stability under bias-temperature-stress. Hydrogen increases the carrier concentration in the active layer, but it also electrically deactivates intrinsic defects depending on its concentration. The influence of hydrogen varies between the TFTs fabricated on a glass substrate to those on a PI substrate. Hydrogen concentration is 5% lower in devices on a PI substrate after annealing, which increases the hysteresis characteristics from 0.22 to 0.55 V and also the threshold voltage shift under positive bias temperature stress by 2 ${\times}$ compared to the devices on a glass substrate. Hence, the analysis and control of hydrogen flux is crucial to maintaining good device performance and stability of a-IGZO TFTs.

• 한국전기전자재료학회논문지
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• 제37권1호
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• pp.43-47
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• 2024

The size of semiconductor devices has been scaled down to improve packing density and output performance. However, there is uncontrollable spreading of the dopants that comprise the well, punch-stop, and channel-stop when using high-temperature annealing processes, such as rapid thermal annealing (RTA). In this context, low-temperature deuterium annealing (LTDA) performed at a low temperature of 300℃ is proposed to reduce the thermal budget during CMOS fabrication. The LTDA effectively eliminates the interface trap in the gate dielectric layer, thereby improving the electrical characteristics of devices, such as threshold voltage (V_TH), subthreshold swing (SS), on-state current (I_ON), and off-state current (I_OFF). Moreover, the LTDA is perfectly compatible with CMOS processes.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권4호
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• pp.217-222
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• 2003

A new two-dimensional analytical model for the potential distribution and drain-induced barrier lowering (DIBL) effect of fully depleted short-channel Silicon-on-insulator (SOI)-MESFET's has been presented in this paper. The two dimensional potential distribution functions in the active layer of the device is approximated as a simple parabolic function and the two-dimensional Poisson's equation has been solved with suitable boundary conditions to obtain the bottom potential at the Si/oxide layer interface. It is observed that for the SOI-MESFET's, as the gate-length is decreased below a certain limit, the bottom potential is increased and thus the channel barrier between the drain and source is reduced. The similar effect may also be observed by increasing the drain-source voltage if the device is operated in the near threshold or sub-threshold region. This is an electrostatic effect known as the drain-induced barrier lowering (DIBL) in the short-gate SOI-MESFET's. The model has been verified by comparing the results with that of the simulated one obtained by solving the 2-D Poisson's equation numerically by using the pde toolbox of the widely used software MATLAB.

• EDISON SW 활용 경진대회 논문집
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• 제4회(2015년)
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• pp.357-364
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• 2015

In this work, we investigate the quantum effects exhibited from ultra-thin GAA(gate-all-around) Nanowire FETs for Sub 14nm Technology. We face designing challenges particularly short channel effects (SCE). However traditional MOSFET SCE models become invalid due to unexpected quantum effects. In this paper, we investigated various performance factors of the GAA Nanowire FET structure, which is promising future device. We observe a variety of quantum effects that are not seen when large scale. Such are source drain tunneling due to short channel lengths, drastic threshold voltage increase caused by quantum confinement for small channel area, leakage current through thin gate oxide by tunneling, induced source barrier lowering by fringing field from drain enhanced by high k dielectric, and lastly the I-V characteristic dependence on channel materials and transport orientations owing to quantum confinement and valley splitting. Understanding these quantum phenomena will guide to reducing SCEs for future sub 14nm devices.

• 한국산학기술학회논문지
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• 제16권1호
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• pp.658-665
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• 2015

의료영상에서 잡음을 제거하는 것과 명암대비를 좋게하는 것은 화질을 향상시키는 중요한 방법이다. 본 논문에서는 의료영상의 화질 향상을 위해 에지 기반 잡음 제거 방법과 적응적 비선형 히스토그램 스트레칭 알고리즘을 제안한다. 첫째, 웨이블릿 변환을 수행하고 분해된 고주파 부밴드 각각에 대해 Haar 변환을 수행한다. 동시에 수평, 수직, 대각 방향의 Sobel 마스크를 적용하여 방향별 에지를 검출한다. 둘째, 고주파 부밴드에 대해 에지 기반 적응적 문턱치를 이용하여 잡음을 제거한다. 셋째, 적응적 가중치를 이용하여 고주파 부밴드 계수 값을 향상한 후, Haar 역변환 및 웨이블릿 역변환을 수행하여 복원영상을 얻는다. 마지막으로 복원된 영상의 화소 값의 범위가 좁아졌으므로 제안하는 비선형 히스토그램 스트레칭 알고리즘을 이용하여 명암대비가 향상된 영상을 얻는다. 제안한 알고리즘을 낮은 명암대비를 갖는 의료영상에 적용했을 경우 효율적으로 에지를 보존하면서도 시각적으로 우수한 결과를 얻었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권4호
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• pp.269-274
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• 2004

Current delivery system, in which the analog current produced by a unique DAC circuit is stored into a current-memory circuit and delivered in a time-divided sequence, shows variation of output current as low as 4% in a current source data-driver IC for AM-OLED driven by a current-programmed method without any fuse repairing after fabrication. This driver IC has 54 outputs and can sink constant current as low as 3 ${\mu}A$ with 6-bit analog levels. Such a low current level without variation can hardly be obtained by an ordinary MOS transistor because the current level is in the sub-threshold region and changes exponentially with threshold voltage variation. Thus we adopted a current mirror circuit composed of bipolar transistors to supply well-controlled current within a nano-ampere range.

• Journal of information and communication convergence engineering
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• 제9권5호
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• pp.487-490
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• 2011

This paper presents splitting and merging algorithm based on adaptive thresholding. The algorithm first divides the image into blocks, and then compares each block using the calculated thresholding value. The blocks which are same are merged using the certain threshold value and different blocks are split unless it satisfies the threshold value. When the block has been merged, maximum and minimum block sizes are determined then the average block size is determined. After the average block size is determined the average intensity and standard deviation of average block is calculated. The process of thresholding is applied to binarize the image. Finally, the experimental results show that the proposed method distinguishes clearly the background with text in the document image.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1353_1354
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• 2009

The OTFT devices had inverted staggered structures of Au/pentacene/ppMMA/ITO on PET substrate. The overall device performances of the flexible devices such as the operating voltage, the field effect mobility, the on/off ratio and the off current are somewhat worse than those of devices fabricated on glass substrates. Pentacene/ppMMA OTFT benchmarks (mobility, sub-threshold slope, on/off ratio) were comparable to that of solution cast PMMA, but below average when compared to other polymer gate dielectrics. However, threshold and drive voltages were among the lowest reported for a polymer gate dielectric, and surpassed only by ultra-thin SAM gate dielectrics.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.170-170
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• 2006

[ ${\pi}-conjugated$ ] organic and polymeric semiconductors are receiving considerable attention because of their suitability as an active layer for electronic devices. An organic inverter with a full swing and a high gain can be obtained through the good qualities of the transfer characteristics of organic thin-film transistors (OTFTs); for example, a low leakage current, a threshold voltage ($V_{th}$) close to 0 V, and a low sub-threshold swing. One of the most critical problems with traditional organic inverters is the high operating voltage, which is often greater than 20 V. The high operating voltage may result in not only high power consumption but also device instabilities such as hysteresis and a shift of $V_{th}$ during operation. In this paper, low-voltage and little-hysteresis pentacene OTFTs and inverters in conjunction with PEALD $Al_{2}O_{3}\;and\;ZrO_{2}$ as the gate dielectrics are demonstrated and the relationships between the transfer characteristics of OTFT and the voltage transfer characteristics (VTCs) of inverter are investigated.