• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.969-972
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• 2004

This paper describes the mechanism of parallel micro machine platform and its feedback control system for acquiring high accuracy. The parallel micro machine platform that has developed has 5x5x5 work-space and sub-micron accuracy. For the high accuracy, the feedback control system is important but errors in machining and assembling are inevitable. Kinematic calibration is important for this reason. In this paper, various error components are introduced and the effects of error component are analyzed.

• 전기의세계
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• v.42 no.10
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• pp.43-49
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• 1993

1970년대 초 플라즈마 에칭 기술이 microelectronic devices 제작에 널리 이용 되면서부터 이 기술은 매우 빠르게 발전하고 있다. 최근의 고밀도 집적회로의 제작에는 다양한 종류의 물질에 엄격히 제어된 sub-micron의 미세한 패턴을 대량 제작하여야 한다는 것이 요구되고 있다. 플라즈마 에칭기술은 이와같은 요구에 부응할 수 있는 기술일 뿐만 아니라 비등방성 에칭 특성이 뛰어나 micro electronic-mechanical system(MEMS)을 위한 가공기술로 응용될 전망도 높다. 이에 본고에서는 플라즈마 에칭 기술의 변천을 간략히 살펴보고 최근에 관심을 끌고 있는 helicon wave 플라즈마원과 그에 의한 식각성능을 소개하고자 한다.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.481-484
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• 1998

In this study, oxide(TEOS) CMPs were carried out for various head pressures. Table and head speeds are fixed at 25 RPM. Head pressures are 5, 7.5, 10, 12.5 PSI, and under these conditions, 1,587, 1,631, 2,556, 2,871.agns./min of oxide (TEOS) removal rates and 14.7, 18.5, 9.52, 7.9% of uniformities are obtained, respectively. Also, these experiments for local and global planarizations were done using the patterned 4" wafers. These conditions are applicable to STI(shallow trench isolation) structures and planarizations for sub-half micron lithography.aphy.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.867-869
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• 2003

Vacuum tube arrays (VTA) with a submicron dimension were fabricated by using anodic aluminum oxide (AAO) nano-templates. The field emission characteristics of Ni nanowires show a turn-on voltage in the range of 11.0-14.0 V and a field enhancement factor in the range of 560-2790. The distance between the tips of Ni nanowires and the anode was much smaller than that between the tips and the anode of conventional designs.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.10a
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• pp.489-490
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• 2006

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.89-90
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• 2009

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.75-75
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• 2009

• Journal of the Korean Society for Precision Engineering
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• v.17 no.7
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• pp.5-13
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• 2000

지금까지의 기계산업의 발달은 대규모의 플랜트 혹은 대형기계 개발 등 대형화를 추구해왔다. 그러나, 최근 에너지와 환경에 대한 인식과 정보 통신, 전자산업, 생명산업의 발달로 소형화와 미세화의 기술 개발이 요구되고 있다. 그 예로 크기가 micron혹은 sub-millimeter 단위인 초소형기계 (Micro Machine)이 등장하게 되었고, 이러한 부품 및 시스템을 제작하는 미세 가공 기술을 Micro Machining이라고 할 수 있다.(중략)

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.181-182
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• 2007

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.472-477
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• 1987

In order to prevent the short-channel effects due to threshold voltage adjustment implantation in conventional n+ doped silicon gate process, a new approach involving automatic doping of polycide by boron during source and drain implantation is introduced. P-MOSFET devece fabricated by theis approach shows improved short channel characteristics than conventional device with n+ doped gate. Some concerns of adopting this approach in CMOS technology are addressed togetheer with some suggestions.